ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .205 4L PILL The ASI ULBM0.5 is Designed for D FEATURES: • • • Omnigold™ Metalization System A C B MAXIMUM RATINGS F IC 0.4 A VCBO 28 V VCEO 12 V G 4.0 V VEBO O PDISS 2.5 W @ TC = 25 C TJ -65 OC to +200 OC O TSTG -65 C to +150 C θ JC 70 OC/W SYMBOL DIM MINIMUM A .976 / 24.800 1.00 / 25.400 B .976 / 24.800 1.00 / 25.400 C .028 / 0.700 MAXIMUM inches / mm inches / mm .031 / 0.800 .138 / 3.500 D O CHARACTERISTICS E H E .106 / 2.700 .139 / 3.400 F .039 / 1.000 .047 / 1.200 G .004 / 0.100 .006 / 0.150 H .200 / 5.100 .208 / 5.300 ORDER CODE: ASI10674 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 25 mA 12 V BVCES IC = 10 mA 28 V BVEBO IE = 5.0 mA 4.0 V hFE VCE = 5.0 V Cob VCB = 12.5 V PG VCC = 12.5 V IC = 150 mA 20 f = 1.0 MHz POUT = 0.5 W f = 470 MHz 13 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. --- --- 4.0 pF dB REV. A 1/1