VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB25-28F is Designed for FEATURES: B .112 x 45° A • • • Omnigold™ Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 4.0 A VCBO 65 V 4.0 V VEBO 35 V VCEO PDISS O O TJ -65 C to +200 C TSTG -65 OC to +150 OC θ JC 4.4 OC/W CHARACTERISTICS SYMBOL MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .385 / 9.78 E 40 W @ TC = 25 OC H I .180 / 4.57 .280 / 7.11 I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10724 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VE = 30 V hFE VCE = 5.0 V Cob VCB = 28 V fT VCE = 10 V PG ηC VCC = 28 V IC = 200 mA 5.0 f = 1.0 MHz IC = 200 mA POUT = 25 W f = 100 MHz f = 175 MHz 250 mA --- --- 50 pF MHz 8.5 dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 2.0 % REV. A 1/1