UHBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBM45 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: A .040x45° • • • Omnigold™ Metalization System B C 2XØ.130 4X .025 R .115 .430 D E F .125 G H MAXIMUM RATINGS I IC 9.0 A VCBO 36 V VCEO 18 V J K 36 V VCES VEBO 4.0 V PDISS 150 W @ TC = 25 OC O O -65 C to +200 C TJ O O TSTG -65 C to +150 C θ JC 1.2 OC/W CHARACTERISTICS SYMBOL inches / mm MAXIMUM inches / mm A .365 / 9.27 B .115 / 2.92 .125 / 3.18 C .075 / 1.91 .085 / 2.16 D .225 / 5.72 .235 / 5.97 E .090 / 2.29 .110 / 2.79 F .720 / 18.29 .730 / 18.54 G .970 / 24.64 .980 / 24.89 H .355 / 9.02 .365 / 9.27 I .004 / 0.10 .006 / 0.15 J .120 / 3.05 .130 / 3.30 K .160 / 4.06 .180 / 4.57 L .230 / 5.84 .260 / 6.60 ORDER CODE: ASI10667 O NONETEST CONDITIONS IC = 50 mA BVCES IC = 50 mA BVEBO IE = 10 mA ICBO VCB = 15 V hFE VCE = 5.0 V COB VCB = 12.5 V ηC MINIMUM .355 / 9.02 TC = 25 C BVCEO PG DIM L VCE = 12.5 V RBE = 10 Ω IC = 1.0 A MINIMUM TYPICAL MAXIMUM 36 V 18 V 4.0 V 5 f = 1.0 MHz POUT = 45 W f = 836 MHz UNITS 80 4.7 mA 200 --pF dB 35 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 5 % REV. A 1/1