VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VHB50-28F is Designed for B FEATURES: .112 x 45° A • • • Omnigold™ Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 6.5 A VCBO 65 V 35 V VCEO 4.0 V VEBO DIM MINIMUM inches / mm inches / mm A .220 / 5.59 MAXIMUM .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 .385 / 9.78 E 75W PDISS O O -65 C to +200 C TJ O -65 C to +150 C θ JC 2.3 OC/W SYMBOL .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 .240 / 6.10 J TSTG CHARACTERISTICS F I O H I .255 / 6.48 ORDER CODE: ASI10728 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 65 V BVEBO IE = 10 mA 4.0 V ICBO VCB = 30 V O ICES VCE = 30 V hFE VCE = 5.0 V Cob VCB = 28 V fT VCE = 10 V IC = 500 mA f = 100 MHz VCE = 28 V POUT =50 W f = 175 MHz PG ηC TC = 125 C IC = 500 mA 5.0 f = 1.0 MHz 2.0 mA 10 mA --- --- 80 pF 200 MHz 6.0 dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. % REV. A 1/1