VLB40-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI VLB40-12F is Designed for B FEATURES: .112 x 45° A • • • Omnigold™ Metalization System Ø.125 NOM. FULL R J .125 C D E F MAXIMUM RATINGS G IC 5.0 A VCBO 36 V 18 V VCEO VEBO 4.0 V PDISS 70 W @ TC = 25 OC O -65 C to +200 C TJ DIM MINIMUM inches / mm MAXIMUM inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .240 / 6.10 .255 / 6.48 .385 / 9.78 E O TSTG -65 OC to +150 OC θ JC 2.5 OC/W CHARACTERISTICS SYMBOL H I .280 / 7.11 I J ORDER CODE: ASI10735 O TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 36 V BVCES IC = 50 mA 36 V BVCEO IC = 50 mA 18 V BVEBO IE = 10 mA 4.0 V ICES VCE = 12.5 V hFE VCE = 5.0 V COB VCB = 12.5 V GP ηC VCC = 12.5 V IC = 5.0 A 20 f = 1.0 MHz POUT = 40 W f = 50 MHz 13 mA 200 --- 100 pF dB 60 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change wiothout notice. 5.0 % REV. A 1/1