TVV030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 6L FLG The ASI TVV030 is Designed for A C 2x ØN FEATURES: FULL R D • • • Omnigold™ Metalization System B G H 16 A 30 V VCEO inches / mm A .150 / 3.43 .160 / 4.06 .220 / 5.59 D .835 / 21.21 .865 / 21.97 E .200 / 5.08 .210 / 5.33 F .490 / 12.45 .510 / 12.95 .003 / 0.08 PDISS 150 W @ TC = 25 OC I θ JC 1.2 OC/W SYMBOL .007 / 0.18 .125 / 3.18 .725 / 18.42 J .970 / 24.64 .980 / 24.89 K .090 / 2.29 .105 / 2.67 L .150 / 3.81 .170 / 4.32 .285 / 7.24 M .120 / 3.05 N O -65 C to +150 C CHARACTERISTICS .045 / 1.14 .210 / 5.33 H TSTG MAXIMUM C G O L inches / mm 4.0 V TJ I MINIMUM VEBO -65 OC to +200 OC J DIM B 60 V VCBO M K MAXIMUM RATINGS IC E .725/18,42 F .135 / 3.43 ORDER CODE: ASI10660 O TC = 25 C NONETEST CONDITIONS BVCBO IC = 100 mA BVCER IC = 100 mA BVCEO MINIMUM TYPICAL MAXIMUM UNITS 60 V 60 V IC = 100 mA 30 V BVEBO IE = 10 mA 4.0 V ICES VCB = 50 V hFE VCE = 5.0 V COB VCB = 30 V PG VCE = 28 V IMD1 POUT = 30 W RBE = 10 Ω IC = 1.0 A 10 f = 1.0 MHz IC = 3.5 A f = 225 MHz 5.0 mA 120 --- 150 pF 7.5 dB -53 dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1