AUK SDB310WMF

SDB310WMF
Semiconductor
Schottky Barrier Diode
Features
• Low power rectified
• Silicon epitaxial type
• High reliability
Ordering Information
Type No.
Marking
SDB310WMF
DB3
Package Code
SOT-23F
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1.90 BSC
0.15±0.05
2
0.4±0.05
3
3
0.9±0.1
1
0~0.1
2.9±0.1
1
KSD-2062-000
2
PIN Connections
1. Anode
2. Cathode
3. Cathode, Anode
1
SDB310WM
Absolute maximum ratings
Ta=25°C
Characteristic
Symbol
Ratings
Unit
VR
30
V
0.5
A
IF
0.2
A
IFSM
2
A
Power dissipation
PD
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ~ 150
°C
Reverse voltage
Repetitive peak forward current
IFRM
Forward current
Non-repetitive peak forward current(10ms)
*
* : δ = D/T =0.33
(T<1S)
* : Unit ratings. Total rating=Unit rating×1.5
Ta=25°°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Forward voltage 1
VF(1)
IF=10mA
-
-
0.4
V
Forward voltage 2
VF(2)
IF=30mA
-
-
0.5
V
Reverse current
IR
VR=30V
-
-
1
µA
Total capacitance
CT
VR=1V, f=1MHz
-
-
10
pF
Reverse recovery time
trr
IF= IR=10mA, IRR= 1mA, RL=100Ω
-
-
5
ns
KSD-2062-000
2
SDB310WMF
Electrical Characteristic Curves
Fig. 1 IF-VF
Fig. 2 IR -VR
Fig. 3 CT-VR
KSD-2062-000
3