STK0765BF Semiconductor Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=650V(Min.) • Low Crss : Crss=13pF(Typ.) • Low gate charge : Qg=32nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω(Typ.) Ordering Information Type NO. Marking STK0765BF Package Code STK0765 TO-220F-3L Outline Dimensions unit : mm 3.46 Typ. 9.10~9.30 2.70 Max. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 2 3 0.60 Max. 1 2.70 Max. 12.20~12.60 Φ3.05~3.35 1.07 Min. 4.70 Max. 15.40~15.80 9.80~10.20 KSD-T0O016-001 PIN Connections 1. Gate 2. Drain 3. Source 1 STK0765BF Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 V (Tc=25℃) 7 A (Tc=100℃) 4.4 A * IDP 28 A Drain power dissipation PD 52 W Drain current (DC) ID Drain current (Pulsed) Single pulsed avalanche energy ② EAS 340 mJ Avalanche current (Repetitive) ① IAR 5.2 A Repetitive avalanche energy ① EAR 13 mJ TJ Tstg 150 -55~150 °C Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Symbol Typ. Junction-case Rth(J-C) - 2.4 Junction-ambient Rth(J-a) - 62.5 KSD-T0O016-001 Max Unit ℃/W 2 STK0765BF Electrical Characteristics Characteristic (Tc=25°C) Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 650 - - V Gate threshold voltage VGS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=650V, VGS=0V - - 10 μA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID=3.5A - 1.2 1.6 Ω Forward transfer conductance ④ gfs VDS=10V, ID=3.5A - 8.1 - S - 974 1460 - 105 236 - 13 20 - 18 - - 19 - - 72 - - 28 - - 32 48 - 6.5 9.8 - 11 17 Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=0V, VDS=25V, f=1MHz VDD=300V, ID=7A RG=25Ω ③④ VDS=300V, VGS=10V ID=7A ③④ Source-Drain Diode Ratings and Characteristics Characteristic Symbol Continuous source current IS Test Condition pF ns nC (Tc=25°C) Min Typ Max - - 7 - - 28 Units Pulsed-source current ① ISM Integral reverse diode in the MOSFET Forward voltage ④ VSD VGS=0V, IS=7A - - 1.4 V Is=7A, VGS=0 dIS/dt=100A/us - 648 - ns - 4.8 - uC Reverse recovery time trr Reverse recovery charge Qrr A Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10mH, IAS=7A, VDD=50V, RG=25Ω , starting TJ=25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0O016-001 3 STK0765BF Electrical Characteristic Curves Fig. 2 ID - VGS Fig. 1 ID - VDS ℃ : - Fig. 4 IS - VSD Fig. 3 RDS(on) - ID ℃ Fig. 5 Capacitance - VDS Fig.6 VGS - QG ℃ KSD-T0O016-001 4 STK0765BF Fig.8 RDS(on) - TJ Fig. 7 VDSS - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T0O016-001 5 STK0765BF Fig. 10 Gate Charge Test Circuit & Waveform Fig. 11 Resistive Switching Test Circuit & Waveform Fig. 12 EAS Test Circuit & Waveform KSD-T0O016-001 6 STK0765BF Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T0O016-001 7 STK0765BF The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T0O016-001 8