RPT-37PB3F Sensors Phototransistor, top view type RPT-37PB3F The RPT-37PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode. It is possible to distinguish the polarity by the shape of ramp type. !External dimensions (Units : mm) !Applications Optical control equipment Receiver for sensors 1.3 !Features 1) High sensitivity. 2) Almost no effect from stray light. Notes : 1. Unspecfied tolerance shall be ±0.2. 2. Measurement in the bracket are that of lead pin at base the mold. 3. Dimension in parenthesis are show for reference. Min.24 Max.1 4−0.6 5.2±0.3 φ3.8±0.3 φ3.1±0.2 2 2.5±1 2− 0.5 1 (2.5) Internal connection diagram 1 2 Emitter Collector !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Collector-emitter voltage Parameter VCEO 32 V Emitter-collector voltage VECO 5 V Collector current IC 30 mA Collector power dissipation PC 150 mW Operating temperature Topr −25~+85 °C Storage temperature Tstg −30~+100 °C !Electrical and optical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Light current Parameter IC 2.0 − − mA VCE=5V, E=500LX Dark current ICEO − − 0.5 µA VCE=10V(Black box) λP − 800 − nm VCE(sat) − − 0.4 V Half-angle θ1 / 2 − ±36 − deg Response time tr·tf − 10 − µs Peak sensitivity wavelength Collector-emitter saturation voltage Conditions − IC=1mA, E=500LX − VCC=5V, IC=1mA, RL=100Ω 1/2 RPT-37PB3F Sensors !Electrical and optical characteristic curves 1000 100 VCE=10V VCE=20V VCE=30V 10 1 0.1 −25 0 25 50 75 8 VCE=5V 500 LIGHT CURRENT : IC (mA) RELATIVE LIGHT CURRENT : IC (%) DARK CURRENT : ICEO (nA) 1000 200 100 50 20 6 4 2 10 −25 100 0 25 50 75 100 0 250 AMBIENT TEMPERATURE : Ta (°C) AMBIENT TEMPERATURE : Ta (°C) Fig.2 Relative output vs. ambient temperature Fig.1 Dark current vs. ambient temperature 500 750 1000 1250 ILLUMINANCE : E (Lx) Fig.3 Light current vs. irradiance COLLECTOR DISSIPATION : PC (mW) 100 8 E=1000Lux 6 750Lux 4 500Lux 2 250Lux 0 0 2 4 6 8 10 14 16 75 50 25 0 400 600 800 1000 1200 1600 160 120 80 40 0 −25 0 25 50 75 100 COLLECTOR−EMITTER VOLTAGE : VCE (V) OPTICAL WAVELENGTH : λ (nm) AMBIENT TEMPERATURE : Ta (°C) Fig.4 Output characteristics Fig.5 Spectral sensitivity Fig.6 Collector dissipation vs. ambient temperature Ta=25°C VCE=5V 20° 10° 0° 100 30° 80 40° 100 50° 60 RL=1kΩ RL=500Ω 10 RL=100Ω 1 0.1 1 10 COLLECTOR CURRENT : IC (mA) Fig.7 Response time vs. collector current 60° 40 70° 20 80° 90° 100 80 60 40 20 RELATIVE LUMINOUS INTENSITY (%) RELATIVE LUMINOUS INTENSITY (%) 1000 RESPONSE TIME : tr (µs) 12 RELATIVE SENSITIVITY : IC (%) LIGHT CURRENT : IC (mA) 10 0 10° 20° 30° 40° 50° 60° 70° 80° 90° ANGULAR DISPLACEMENT (deg) Fig.8 Directional pattern 2/2