STK7002 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switch • High saturation current capability. Ordering Information Type NO. Marking STK7002 K702 Package Code SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 1.90 Typ. 2.9±0.1 1 3 0.4 Typ. 2 -0.03 +0.05 KST-2105-003 PIN Connections 1. Gate 2. Source 3. Drain 0.124 0~0.1 0.38 1.12 Max. 0.2 Min. 1 STK7002 Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Drain-Source voltage VDSS 60 V Gate-Source voltage VGS ±20 V ID 115 mA Pulsed Drain Current IDM 800 mA Power dissipation PD 200 mW RthJA 625 °C/W T J , T stg -55~150 °C Maximum Drain current Maximum Junction-to-Ambient Operating Junction and Storage temperature range Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit 60 - - V Drian-Source breakdown voltage BVDSS ID =10µA, VGS =0 Gate-Threshold voltage VGS(t h) ID =0.25mA, VDS =V GS 1 2.0 2.5 V Zero Gate voltage drain current IDSS VDS =60V, V GS =0 - - 1 µA Gate-body leakage IGSS VDS =0V, VGS =±20V - - ±100 nA On-state drain current ID(on) VDS =7.5V, VGS =10V 500 1000 - mA - 3.2 7.5 5.8 13.5 2.4 7.5 4.4 13.5 80 - - - 22 50 - 11 25 - 2 5 - 7 20 ns - 11 20 ns VGS =5V, ID =0.05A Drain-Source on-resistance RDS(ON) Tc=125℃ VGS =10V, I D =0.5A Tc=125℃ Forward transconductance g fs Input capacitance C iss Output capacitance C oss Reverse Transfer capacitance C rss Turn-on time tON Turn-off time tOFF VDS =10V, I D =0.2A VDS =25V, V GS =0, f=1MHz VDD=30V, ID =0.2A VGEN =10V, RG =25Ω KST-2105-003 Ω mS pF 2 STK7002 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 rDS(on) - ID Fig. 4 C - VD S Fig. 5 VGS - Qg Fig. 6 rDS(on) - TJ KST-2105-003 3 STK7002 Fig. 7 rDS(on) - VGS Fig. 8 IS - V SD Fig. 9 VGS( th) - TJ µ KST-2105-003 4