KEC 2N7002A

SEMICONDUCTOR
2N7002A
TECHNICAL DATA
N CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
INTERFACE AND SWITCHING APPLICATION.
FEATURES
High density cell design for low RDS(ON).
Voltage controolled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
VDSS
60
V
VDGR
60
V
Drain-Source Voltage
Drain-Gate Voltage (RGS
1
)
VGSS
Gate-Source Voltage
20
Continuous
ID
115
Pulsed
IDP
800
Drain Power Dissipation
PD
200
Junction Temperature
Tj
150
Tstg
-55 150
Drain Current
V
mA
Storage Temperature Range
mW
EQUIVALENT CIRCUIT
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=10 A
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
-
-
1
A
Gate-Body Leakage, Forward
IGSSF
VGS=20V, VDS=0V
-
-
1
A
Gate-Body Leakage, Reverse
IGSSR
VGS=-20V, VDS=0V
-
-
-1
A
2008. 4. 4
Revision No : 5
1/4
2N7002A
ELECTRICAL CHARACTERISTICS (Ta=25 )
ON CHARACTERISTICS (Note 1)
CHARACTERISTIC
SYMBOL
Vth
Gate Threshold Voltage
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VDS=VGS, ID=250 A
1
2.1
2.5
V
VGS=10V, ID=500mA
-
1.8
5
VGS=5V, ID=50mA
-
-
5
VGS=10V, ID=500mA
-
0.6
1.0
VGS=5V, ID=50mA
-
0.09
0.2
VGS=10V, VDS= 2 VDS(ON)
500
2700
-
mA
VDS=2VDS(ON), ID=200mA
80
320
-
mS
MIN.
TYP.
MAX.
UNIT
-
20
50
-
4
5
-
11
25
RDS(ON)
Drain-Source ON Resistance
VDS(ON)
Drain-Source ON Voltage
V
ID(ON)
On State Drain Current
gFS
Forward Transconductance
Note 1) Pulse Test : Pulse Width 300
, Duty Cycle
2.0%
DYNAMIC CHARACTERISTICS
CHARACTERISTIC
SYMBOL
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
TEST CONDITION
VDS=25V, VGS=0V, f=1MHz
Turn-On Time
ton
VDD=30V, RL=150 , ID=200mA,
-
-
20
Turn-Off Time
toff
VGS=10V, RGEN=25
-
-
20
Switching Time
pF
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
IS
-
-
-
115
mA
ISM
-
-
-
800
mA
-
0.88
1.5
V
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
2008. 4. 4
Revision No : 5
VSD
VGS=0V, IS=115mA (Note1)
2/4
2N7002A
2008. 4. 4
Revision No : 5
3/4
2N7002A
2008. 4. 4
Revision No : 5
4/4