SEMICONDUCTOR 2N7002A TECHNICAL DATA N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controolled small signal switch. Rugged and reliable. High saturation current capablity. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VDSS 60 V VDGR 60 V Drain-Source Voltage Drain-Gate Voltage (RGS 1 ) VGSS Gate-Source Voltage 20 Continuous ID 115 Pulsed IDP 800 Drain Power Dissipation PD 200 Junction Temperature Tj 150 Tstg -55 150 Drain Current V mA Storage Temperature Range mW EQUIVALENT CIRCUIT ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 1 A Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -1 A 2008. 4. 4 Revision No : 5 1/4 2N7002A ELECTRICAL CHARACTERISTICS (Ta=25 ) ON CHARACTERISTICS (Note 1) CHARACTERISTIC SYMBOL Vth Gate Threshold Voltage TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A 1 2.1 2.5 V VGS=10V, ID=500mA - 1.8 5 VGS=5V, ID=50mA - - 5 VGS=10V, ID=500mA - 0.6 1.0 VGS=5V, ID=50mA - 0.09 0.2 VGS=10V, VDS= 2 VDS(ON) 500 2700 - mA VDS=2VDS(ON), ID=200mA 80 320 - mS MIN. TYP. MAX. UNIT - 20 50 - 4 5 - 11 25 RDS(ON) Drain-Source ON Resistance VDS(ON) Drain-Source ON Voltage V ID(ON) On State Drain Current gFS Forward Transconductance Note 1) Pulse Test : Pulse Width 300 , Duty Cycle 2.0% DYNAMIC CHARACTERISTICS CHARACTERISTIC SYMBOL Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss TEST CONDITION VDS=25V, VGS=0V, f=1MHz Turn-On Time ton VDD=30V, RL=150 , ID=200mA, - - 20 Turn-Off Time toff VGS=10V, RGEN=25 - - 20 Switching Time pF nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RAINGS CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT IS - - - 115 mA ISM - - - 800 mA - 0.88 1.5 V Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage 2008. 4. 4 Revision No : 5 VSD VGS=0V, IS=115mA (Note1) 2/4 2N7002A 2008. 4. 4 Revision No : 5 3/4 2N7002A 2008. 4. 4 Revision No : 5 4/4