STJ828SF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch applications. Features • -2.5V Gate drive. • Low threshold voltage : Vth = -0.5~ -1.5V. • High speed. Ordering Information Type NO. Marking STJ828SF Package Code J28 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC 0.9±0.1 0.15±0.05 2 0.4±0.05 3 0~0.1 2.9±0.1 1 KST-2125-000 PIN Connections 1. Gate 2. Source 3. Drain 1 STJ828SF Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±7 V DC Drain current ID -50 mA Drain Power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drain-Source breakdown voltage (Ta=25°C) Symbol BVDSS Test Condition Min. Typ. Max. Unit ID=-100µA, VGS=0 -20 - -0.5 - -1.5 V V Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V Drain cut-off current IDSS VDS=-20V, VGS=0 - - -1 µA Gate leakage current IGSS VGS=±7V, VDS=0 - - ±1 µA - 40 Ω Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 - - mS Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz - 10.4 - pF Output capacitance Coss VDS=-3V, VGS=0, f=1MHz - 8.4 - pF Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz - 2.8 - pF - 0.15 - ㎲ - 0.13 - ㎲ Turn-on time tON Turn-off time tOFF VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V *. Switching Time Test Circuit = Ω KST-2125-000 2 STJ828SF Electrical Characteristic Curves Fig2 ID - VDS Fig1 ID - VDS ℃ ℃ Fig4 ID - VGS Fig3 IDR - VDS ℃ 100℃ - ℃ ℃ Fig5 │Yfs│- ID Fig6 C - VDS ℃ ℃ KST-2125-000 3 STJ828SF Fig7 VDS(on) - ID Fig8 t - ID - G ℃ Ω ℃ Fig9 PD - Ta KST-2125-000 4