BB OPT210P

®
OPT210
FPO
MONOLITHIC PHOTODIODE AND AMPLIFIER
300kHz Bandwidth at RF = 1MΩ
FEATURES
DESCRIPTION
● BOOTSTRAP ANODE DRIVE:
Extends Bandwidth: 900kHz (RF = 100KΩ)
Reduces Noise
● LARGE PHOTODIODE: 0.09" x 0.09"
The OPT210 is a photodetector consisting of a high
performance silicon photodiode and precision FETinput transimpedance amplifier integrated on a single
monolithic chip. Output is an analog voltage proportional to light intensity.
● HIGH RESPONSIVITY: 0.45A/W (650nm)
● EXCELLENT SPECTRAL RESPONSE
● WIDE SUPPLY RANGE: ±2.25 to ±18V
The large 0.09" x 0.09" photodiode is operated at low
bias voltage for low dark current and excellent linearity. A novel photodiode anode bootstrap circuit reduces the effects of photodiode capacitance to extend
bandwidth and reduces noise.
● TRANSPARENT DIP, SIP AND SURFACEMOUNT PACKAGES
● BARCODE SCANNERS
● MEDICAL INSTRUMENTATION
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates
the problems commonly encountered with discrete
designs such as leakage current errors, noise pick-up
and gain peaking due to stray capacitance.
● LABORATORY INSTRUMENTATION
● POSITION AND PROXIMITY DETECTORS
● PARTICLE DETECTORS
The OPT210 operates from ±2.25 to ±18V supplies
and quiescent current is only 2mA. Available in a
transparent 8-pin DIP, 8-lead surface-mount and 5-pin
SIP, it is specified for 0° to 70°C operation.
APPLICATIONS
5
λ
(5)
+1
8
(1)
3
(4)
VO
Infrared
0.5
Using External
1MΩ Resistor
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
Photodiode Responsivity (A/W)
OPT210
Red
Ultraviolet
0.5
2 (3)
Voltage Output (V/µW)
1 (2)
Blue
V+
Green
Yellow
SPECTRAL RESPONSIVITY
RF
V–
DIP Pins
(SIP Pins)
0
100
200 300 400 500
600
0
700 800 900 1000 1100
Wavelength (nm)
International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111
Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132
®
1
PDS-1313B
OPT210
SPECIFICATIONS
At TA = +25°C, VS = ±15V, λ = 650nm, External RF = 1MΩ, RL = 10kΩ, unless otherwise noted.
OPT210P
OPT210W
PARAMETER
CONDITIONS
RESPONSIVITY
Photodiode Current
Unit-to-Unit Variation
Voltage Output
Nonlinearity
Photodiode Area
DARK ERROR, RTO
Offset Voltage
vs Temperature
vs Power Supply
Voltage Noise
FREQUENCY RESPONSE
Bandwidth
Rise Time
Settling Time, 1%
0.1%
0.01%
Overload Recovery
OUTPUT
Voltage Output, Positive
Positive
Negative(1)
Capacitive Load, Stable Operation
Short-Circuit Current(2)
MIN
λ = 650nm
TYP
(0.09 x 0.09in)
(2.29 x 2.29mm)
0.45
±5
0.45
0.01
0.008
5.2
VS = ±2.25V to ±18V
BW = 0.01Hz to 100kHz
±2
±35
100
160
λ = 650nm, External RF = 1MΩ
External RF = 1MΩ
10% to 90%
FS to Dark step
100% Overdrive
RL = 10kΩ
RL = 5kΩ
RL = 10kΩ
(V+)–1.25
–0.4
POWER SUPPLY
Operating Range
Quiescent Current
UNITS
A/W
%
V/µW
% of FS
in2
mm2
±10
1000
mV
µV/°C
µV/V
µVrms
300
1.2
3
8
20
7
kHz
µs
µs
µs
µs
µs
(V+)–0.75
(V+)–1
–0.5
500
+50
V
±2.25
+2.0/–1.7
TEMPERATURE RANGE
Specification
Operating
Storage
θJA
MAX
0
0
–25
V
pF
mA
±18
±4
V
mA
70
70
85
°C
°C
°C
°C/W
100
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
PHOTODIODE SPECIFICATIONS
PHOTODIODE
PARAMETER
CONDITIONS
Photodiode Area
Current Responsivity
Dark Current
vs Temperature
Capacitance
Effective Capacitance(1)
MIN
(0.09 x 0.09in)
(2.29 x 2.29mm)
λ = 650nm
TYP
0.008
5.2
0.45
865
70
Doubles every 10°C
550
10
VD = –1.2V
VD = –1.2V
VD = –1.2V
MAX
UNITS
in2
mm2
A/W
µA/W/cm2
pA
pF
pF
NOTES: (1) Effect of photodiode capacitance is reduced by internal buffer bootstrap drive. See text
The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes
no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant
any BURR-BROWN product for use in life support devices and/or systems.
®
OPT210
2
OP AMP SPECIFICATIONS
Op amp specifications provided for comparative information only.
OP AMP
PARAMETER
CONDITIONS
MIN
INPUT
Offset Voltage
vs Temperature
vs Power Supply
Input Bias Current
Inverting Input
vs Temperature
Non-inverting Input
TYP
MAX
UNITS
±2
±35
100
mV
µV/°C
µV/V
15
Doubles every 10°C
300
pA
20
9
6
0.8
nV/√Hz
nV/√Hz
nV/√Hz
fA/√Hz
INPUT VOLTAGE RANGE
Common-Mode Input Range(1)
Common-Mode Rejection
VS±2.25
65
V
dB
INPUT IMPEDANCE
Inverting Input Impedance
Non-Inverting Input Impedance
3x1010||3
250
Ω || pF
kΩ
70
dB
35
25
240
390
800
7
MHz
ns
ns
ns
ns
µs
(V+)–0.75
(V+)–1
–0.5
500
+50
V
NOISE
Voltage Noise
f = 10Hz
f = 100Hz
f = 1kHz
Current Noise Density, Inverting Input
OPEN-LOOP GAIN
Open-Loop Voltage Gain
FREQUENCY RESPONSE
Bandwidth, Small Signal
Rise Time, Large Signal
Settling Time, 1%
0.1%
0.01%
Overload Recovery
BW = 0.01Hz to 100kHz
VO = 0V to +13.75V
10% to 90%
10V step
100% Overdrive
OUTPUT
Voltage Output, Positive
Positive
Negative(1)
Capacitive Load, Stable Operation
Short-Circuit Current(2)
RL = 10kΩ
RL = 5kΩ
RL = 10kΩ
(V+)–1.25
–0.4
POWER SUPPLY
Operating Voltage
Quiescent Current
±2.25
+1.7/–1.4
µA
V
pF
mA
±18
±4
V
mA
NOTES: (1) Output typically swings to 0.5V below the voltage applied to the non-inverting input terminal, which is normally connected to ground. (2) Positive
current (sourcing) is limited. Negative current (sinking) is not limited.
BUFFER SPECIFICATIONS
Buffer specifications provided for comparative information only.
BUFFER
PARAMETER
CONDITIONS
MIN
INPUT
Offset Voltage(1)
Input Bias Current
vs Temperature
Input Impedance
TYP
MAX
UNITS
–1.2
15
Doubles every 10°C
1011||3
Ω || pF
FREQUENCY RESPONSE
Bandwidth, Small Signal
500
MHz
OUTPUT
Current
Voltage Gain
±200
0.99
µA
V/V
POWER SUPPLY
Operating Range
Quiescent Current
±2.25
±0.3
V
pA
±18
V
mA
NOTE: (1) Intentional voltage offset to reverse bias photodiode.
®
3
OPT210
ELECTROSTATIC
DISCHARGE SENSITIVITY
PIN CONFIGURATIONS
Top View
DIP
V+
1
8
Common
–In
2
7
NC
6
NC
5
Output
V–
3
NC
4
(1)
This integrated circuit can be damaged by ESD. Burr-Brown
recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and
installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
NOTE: (1) Photodiode location.
Top View
SIP
Common
1
V+
2
–In
3
V–
4
Output
5
(1)
MOISTURE SENSITIVITY
AND SOLDERING
NOTE: (1) Photodiode location.
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at 85°C for 24 hours.
ABSOLUTE MAXIMUM RATINGS
Supply Voltage ................................................................................... ±18V
Input Voltage Range (Common Pin) .................................................... ±VS
Output Short-Circuit (to ground) ............................................... Continuous
Operating Temperature: P, W ........................................... –25°C to +85°C
Storage Temperature: P, W ........................................... –25°C to +85°C
Junction Temperature: P, W .......................................................... +85°C
Lead Temperature (soldering, 10s) ................................................ +300°C
(Vapor-Phase Soldering Not Recommended on Plastic Packages)
The fire-retardant fillers used in black plastic are not compatible with clear molding compound. The OPT210 plastic
packages cannot meet flammability test, UL-94.
PACKAGE INFORMATION
PRODUCT
PACKAGE
PACKAGE DRAWING
NUMBER(1)
OPT210P
OPT210P-J
OPT210W
8-Pin Plastic DIP
8-Lead Surface Mount(2)
5-Pin Plastic SIP
006-5
006-6
321-1
NOTE: (1) For detailed drawing and dimension table, please see end of data
sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-pin DIP with leads
formed for surface mounting.
®
OPT210
4
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
NORMALIZED SPECTRAL RESPONSIVITY
VOLTAGE RESPONSIVITY vs RADIANT POWER
10
(0.48A/W)
0.8
650nm
(0.45A/W)
Output Voltage (V)
Normalized Current or Voltage Output
1.0
0.6
0.4
Ω
M
1
RF
=
10
Ω
RF
0.1
=
1M
0k
RF
=
Ω
10
0.01
kΩ
RF
0.2
=
10
Ω
RF
=
1k
λ = 650nm
0.001
0
100
200 300 400 500
600
700 800 900 1000 1100
0.01
0.1
1
Wavelength (nm)
10
100
1k
Radiant Power (µW)
VOLTAGE OUTPUT RESPONSIVITY vs FREQUENCY
VOLTAGE RESPONSIVITY vs IRRADIANCE
100
10
Ω
1
RF
=
M
10
0.1
Responsivity (V/µW)
Output Voltage (V)
RF = 100MΩ
Ω
RF
=
1M
kΩ
RF
=
0
10
0.01
kΩ
RF
=
10
RF
=
Ω
1k
RF = 1MΩ, CF = 0.5pF
1
RF = 100kΩ, CF = 1.8pF
0.1
λ = 650nm
0.001
0.01
0.001
0.01
0.1
1
10
1k
100
POWER SUPPLY REJECTION
vs FREQUENCY
SIP Package
80
0.8
θY
0.6
θX
Plastic
DIP Package
θY
0.4
0.2
0.2
10M
90
θX
θY
0.6
0.4
1M
RESPONSE vs INCIDENT ANGLE
Power Supply Rejection (dB)
θX
100k
Frequency (Hz)
1.0
0.8
10k
Irradiance (W/m2)
1.0
Relative Response
RF = 10MΩ
10
70
60
V–
50
40
30
20
V+
10
0
0
0
±20
±40
±60
–10
0
±80
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Incident Angle (°)
®
5
OPT210
TYPICAL PERFORMANCE CURVES
(CONT)
At TA = +25°C, VS = ±15V, λ = 650nm, unless otherwise noted.
OUTPUT NOISE VOLTAGE
vs MEASUREMENT BANDWIDTH
QUIESCENT CURRENT vs TEMPERATURE
10–2
IQ–
Noise Voltage (Vrms)
2
VS = ±15V
IQ+
1
Dashed lines indicate
noise measured beyond
the signal bandwidth.
10–3
IQ+
IQ–
VS = ±2.25V
RF = 10MΩ
10–4
RF = 100MΩ
10–5
RF = 100kΩ
10–6
RF = 10kΩ
RF = 1MΩ
10–7
0
–75
–50
–25
0
25
50
75
100
10
125
100
1k
10k
100k
1M
Temperature (°C)
Frequency (Hz)
SMALL-SIGNAL RESPONSE, RF = 1MΩ
Measurement BW = 1MHz
LARGE-SIGNAL RESPONSE, RF = 1MΩ
2V/div
20mV/div
5µs/div
5µs/div
NOISE EFFECTIVE POWER
vs MEASUREMENT BANDWIDTH
RF = 10kΩ
10–7
Dashed lines indicate
noise measured beyond
the signal bandwidth.
λ = 650nm
10–8
Noise Effective Power (W)
Quiescent Current (mA)
3
RF = 100kΩ
RF = 1MΩ
RF = 10MΩ
10–9
RF = 100MΩ
10–10
10–11
10–12
10–13
10–14
10
100
1k
10k
100k
Frequency (Hz)
®
OPT210
6
1M
10M
10M
APPLICATIONS INFORMATION
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power and feedback resistor values. The response
curve “Output Voltage vs Irradiance” is based on the
photodiode area of 5.23x10–6m2.
Basic operation of the OPT210 is shown in Figure 1. Power
supply bypass capacitors should be connected near the
device pins as shown. Noise performance of the OPT210 can
be degraded by the high frequency noise on the power
supplies. Resistors in series with the power supply pins as
shown can be used (optional) to help filter power supply
noise
BOOTSTRAP BUFFER
The photodiode’s anode is driven by an internal high speed
voltage buffer shown in Figure 1. This variation on the
classical transimpedance amplifier circuit reduces the effects
of photodiode capacitance. The effective photodiode
capacitance is reduced from approximately 550pF to 10pF
with this bootstrap drive technique. This improves bandwidth
and reduces noise.
An external feedback resistor, RF, is connected from –In to
the VO terminal as shown in Figure 1. Feedback resistors of
1MΩ or less require parallel capacitor, CF. See the table of
values in Figure 1.
(paracitic capacitance)
The output voltage of the buffer is offset approximately
1.2V below the input. This reverse biases the photodiode for
reduced capacitance.
+15V
For RF > 2MΩ,
use series-connected
resistors. See text.
CF
1µF
+
100Ω
1 (2)
OP AMP
A special op amp design is used to achieve wide bandwidth.
The op amp output voltage cannot swing lower than 0.5V
below the non-inverting input voltage. Since photodiode
current always produces a positive output voltage, this does
not limit the required output swing.
RF
2 (3)
OPT210
5
λ
(5)
+1
8 (1)
3
The inverting input is designed for very low input bias
current—approximately 15pA. The non-inverting input has
much larger bias current—approximately 300µA flows out
of this terminal.
(4)
100Ω
Optional series resistors filter
power supply noise. See text.
VO
(0V to 14V)
+
1µF
+15V
–15V
RF
CF (min)
BANDWIDTH
10MΩ
1MΩ
100kΩ
10kΩ
1kΩ
(1)
0.5pF
1.8pF
10pF
20pF
70kHz
300kHz
900kHz
1.6MHz
1.6MHz
RF
0.1µF
1 (2)
2 (3)
1MΩ
OPT210
5
λ
NOTE: (1) Two series-connected resistors of RF /2 for low capacitance. See text.
+1
VO
Output voltage
offset by VA
+15V
FIGURE 1. Basic Operation.
(5)
8 (1)
3
(4)
300µA
0.1µF
100µA
1/2 REF200
Bandwidth varies with feedback resistor value. To achieve
widest bandwidth with resistors greater than 1MΩ, use care
to minimize parasitic parallel capacitance. For widest
bandwidth with resistors greater than 2MΩ, connect two
resistors (RF/2) in series. Airwiring this interconnection
provides lowest capacitance. Although the OPT210 is usable
with feedback resistors of 100MΩ and higher, with
RF ≥ 10MΩ the model OPT211 will provide lower dc errors
and reduced noise.
–15V
200Ω
200Ω
OPA131
VA
±20mV
10kΩ
100µA
1/2 REF200
–15V
The OPT210’s output voltage is the product of the photodiode
current times the external feedback resistor, RF. Photodiode
current, ID, is proportional to the radiant power or flux (in
watts) falling on the photodiode. At a wavelength of 650nm
(visible red) the photodiode Responsivity, RI, is approximately
0.45A/W. Responsivity at other wavelengths is shown in the
typical performance curve “Responsivity vs Wavelength.”
FIGURE 2. Adjustable Output Offset.
An offset voltage can be connected to the non-inverting
input as shown in Figure 2. A voltage applied to the noninverting input is summed at the output. Because the noninverting input bias current is high (approximately 300µA),
it should be driven by a low impedance such as the bufferconnected op amp shown.
®
7
OPT210
cosine of the incident angle). At a greater incident angle,
light is diffused by the side of the package. These effects are
shown in the typical performance curve, “Response vs
Incident Angle.”
The OPT210 can be connected to operate from a single
power supply as shown in Figure 3. The non-inverting input
bias current flows through a zener diode to provide a bias
voltage. The output voltage is referenced to this bias point.
LINEARITY PERFORMANCE
Photodiode current is very linear with radiant power
throughout its range. Nonlinearity remains below
approximately 0.01% up to 200µA. The anode buffer drive,
however, is limited to approximately 200µA. This produces
an abrupt limit to photodiode output current when radiant
power reaches approximately 450µW.
+15V
RF
0.1µF
1 (2)
2 (3)
VO measured
relative to 5.6V
zener voltage.
OPT210
5
λ
(5)
+1
VO
Best linearity is achieved with the photodiode uniformly
illuminated. A light source focused to a very small beam,
illuminating only a small percentage of the photodiode area,
may produce a higher nonlinearity.
(5.6V)
8
(1)
≈300µA
ZD1
3
(4)
+
1µF
ZD1: IN4626 5.6V
specified at IZ = 250µA
NOISE PERFORMANCE
Noise performance of the OPT210 is determined by the op
amp characteristics in conjunction with the feedback
components, photodiode capacitance, and buffer performance.
The typical performance curve “Output Noise Voltage vs
Measurement Bandwidth” shows how the noise varies with
RF and measured bandwidth (0.1Hz to the indicated
frequency). The signal bandwidth of the OPT210 is indicated
on the curves. Noise can be reduced by filtering the output
with a cutoff frequency equal to the signal bandwidth.
FIGURE 3. Single Power Supply Operation.
DARK ERRORS
The dark errors in the specification table include all sources
with RF = 1MΩ. The dominant error source is the input
offset voltage of the op amp. Photodiode dark current is
approximately 70pA and the combined input bias current of
the op amp and buffer is approximately 30pA. Photodiode
dark current and input bias current total approximately
100pA at 25°C and double for each 10°C above 25°C. At
70°C, the total error current is approximately 2nA. With
RF = 1MΩ, this would produce a 2mV offset voltage in
addition to the initial amplifier offset voltage (10mV max)
at 25°C. The dark output voltage can be trimmed to zero
with the optional circuit shown in Figure 2.
Output noise increases in proportion to the square-root of the
feedback resistance, while responsivity increases linearly
with feedback resistance. So best signal-to-noise ratio is
achieved with large feedback resistance. This comes with
the trade-off of decreased bandwidth.
The noise performance of a photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power which would produce an output signal equal
to the noise level. NEP has the units of radiant power
(watts), or Watts/√Hz to convey spectral information about
the noise. The typical performance curve “Output Noise
Voltage vs Measurement Bandwidth” is also scaled for NEP
on the right-hand side.
LIGHT SOURCE POSITIONING
The OPT210 is tested with a light source that uniformly
illuminates the full integrated circuit area, including the op
amp. Although all IC amplifiers are light sensitive to some
degree, the OPT210 op amp circuitry is designed to minimize
this effect. Sensitive junctions are shielded with metal where
possible. Furthermore, the photodiode area is very large
compared to the op amp circuitry making these effects
negligible.
If your light source is focused to a small area, be sure that
it is properly aimed to fall on the photodiode. If a narrowly
focused light source were to miss the photodiode and fall on
the op amp circuitry, the OPT210 would not perform properly.
The large photodiode area is clearly visible as a very dark
area slightly offset from the center of the IC.
The incident angle of the light source also affects the
apparent sensitivity in uniform irradiance. For small incident
angles, the loss in sensitivity is due to the smaller effective
light gathering area of the photodiode (proportional to the
®
OPT210
8