N-Channel JFET Monolithic Dual CORPORATION SST440 / SST441 FEATURES DESCRIPTION APPLICATIONS Calogic’s SST440 Series is a high speed N-Channel Monolithic Dual JFET in a surface mount SO-8 package. This device is well suited for use as wideband differential amplifiers in test and measurement applications. The combination of high gain, low leakage and low noise make it an excellent performer. • High Gain . . . . . . . . . . . . . . . . . . . . . . . gfs > 6 mS typical Leakage . . . . . . . . . . . . . . . . . . . . . . IG < 1pA typical • Low • Low Noise • Surface Mount Package Wideband Amplifiers • Differential • VHF/UHF Amplifiers • Test and Measurement ORDERING INFORMATION Part Package SST440-1 Plastic SO-8 Temperature Range -55oC to +150oC NOTE: For Sorted Chips in Carriers, See U440 Series PIN CONFIGURATION TOP VIEW SO-8 (1) S1 N/C (8) (2) D1 G2 (7) (3) G1 D2 (6) (4) N/C S2 (5) CJ1 PRODUCT MARKING SST440 SST440 SST441 SST441 SST440 / SST441 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Parameter/Test Condition Symbol Limit Unit VGD VGS IG PD -25 -25 50 300 500 2.4 4 -55 to 150 -55 to 150 300 V V mA mW mW mW/ oC mW/ oC o C o C o C Gate-Drain Voltage Gate-Source Voltage Forward Gate Current Power Dissipation (per side) (total) Power Derating (per side) (total) Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 seconds) TJ Tstg TL ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL CHARACTERISTCS TYP1 SST440 MIN MAX SST441 MIN UNIT TEST CONDITIONS MAX STATIC V(BR)GSS Gate-Source Breakdown Voltage -35 -25 VGS(OFF ) Gate-Source Cut off Voltage -3.5 -1 -6 -1 -6 15 6 30 6 30 IDSS Saturation Drain Current IGSS Gate Reverse Current 2 -1 -25 -500 V -500 Gate Operating Current VGS(F) Gate-Source Forward Voltage VDS = 10V, ID = 1nA mA VDS = 10V, VGS = 0V pA VGS = -15V, VDS = 0V nA TA = 125 oC pA VDG = 10V, ID = 5mA -0.2 nA TA = 125 oC 0.7 V IG = 1mA, VDS = 0V mS VDG = 10V, ID = 5mA f = 1kHz -0.2 IG IG = -1µA, VDS = 0V -1 -500 -500 DYNAMIC gfs Common-Source Forward Transconductance 6 4.5 9 gos Common-Source Output Conductance 20 gfs Common-Source Forward Transconductance 5.5 mS gos Common-Source Output Conductance 30 µS Ciss Common-Source Input Capacitance 3.5 Crss Common-Source Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 Differential Gate-Source Voltage 7 Gate-Source Voltage Differential Change with Temperature 10 200 4.5 9 200 µS VDG = 10V, ID = 5mA f = 100MHz pF VDG = 10V, ID = 5mA f = 1MHz nV/ Hz VDG = 10V, ID = 5mA f = 10kHz mV VDG = 10V, ID = 5mA MATCHING | VGS1-VGS2| ∆ | VGS1-VGS2| ∆T IDSS1 IDSS2 gfs1 gfs2 CMRR 10 10 20 µV/ oC T = -55 to 25oC VDG =10V, T = 25 to 125oC ID = 5mA Saturation Drain Current Ratio 0.98 VDS = 10V, VGS = 0V Transconductance Ratio 0.98 VDG = 10V, ID = 5mA f= 1 kHz Common Mode Rejection Ratio NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300µs, duty cycle ≤ 3%. 90 dB VDD = 5 to 10V, ID = 5mA