Linear Systems replaces discontinued Siliconix SST441
The SST441 is a tightly matched Monolithic Dual N-Channel JFET
FEATURES Direct Replacement for SILICONIX SST441 HIGH CMRR LOW GATE LEAKAGE ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) The SST441 are monolithic dual JFETs mounted in a
SOIC package. The monolithic dual chip design
reduces parasitics and gives better performance at very
high frequencies while ensuring extremely tight
matching. These devices are an excellent choice for
use as wideband differential amplifiers in demanding
test and measurement applications. The SST441 is a
direct replacement for discontinued Siliconix SST441.
Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (Total) Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source Gate to Gate The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
SST441 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated SingleEnded Input Amps
High-Speed Comparators
Impedance Converters and vibrations
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VGS1 – VGS2 | Differential Gate to Source Cutoff Voltage ∆|VGS1 – VGS2 | / ∆T Differential Gate to Source Cutoff Voltage Change with Temperature IDSS1 / IDSS2 Gate to Source Saturation Current Ratio Gfs1 / Gfs2 Forward Transconductance Ratio2 CMRR ≥ 85dB IGSS ≤ 1 pA MIN TYP ‐65°C to +150°C ‐55°C to +135°C 500mW 50mA ‐25V ‐25V ±50V 20 MAX 20 0.07 CONDITIONS VDG = 10V, ID = 5mA VDG = 10V, ID = 5mA TA = ‐55°C to +125°C VDS = 10V, VGS = 0V 0.97 VDS = 10V, ID = 5mA, f = 1kHz 85 dB VDG = 5 to 10V, ID = 5mA UNITS mV µV/°C Click To Buy
CMRR Common Mode Rejection Ratio ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS MIN. BVGSS Gate to Source Breakdown Voltage ‐25 VGS(off) Gate to Source Cutoff Voltage ‐1 IDSS Gate to Source Saturation Current 6 IGSS Gate Leakage Current3 IG Gate Operating Current gfs gos CISS CRSS en Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance Equivalent Input Noise Voltage 4.5 TYP. ‐3.5 15 ‐1 ‐1 MAX. ‐6 30 ‐500 ‐500 UNITS V V mA pA pA CONDITIONS IG = ‐1µA, VDS = 0V VDS = 10V, ID = 1nA VDS = 10V, VGS = 0V VGS = ‐15V, VDS = 0V VDG = 10V, ID = 5mA 6 70 3 1 4 9 200 mS µS pF pF nV/√Hz VDS = 10V, ID= 5mA, f = 1kHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator VDS = 10V, ID = 5mA, f = 1MHz VDS = 10V, ID = 5mA, f = 10kHz SOIC (Top View)
Available Packages:
SST441 in SOIC
SST441 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.