U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +135 °C U SERIES SST SERIES TO-71 BOTTOM VIEW SOIC G1 3 D1 Maximum Power Dissipation Continuous Power Dissipation (Total) 2 S1 500mW S2 5 6 1 7 D2 S1 1 8 NC D1 2 7 G2 G1 3 6 D2 NC 4 5 S2 G2 Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -25V Gate to Source -25V Gate to Gate ±50V MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL VGS1 − VGS2 ∆ VGS1 − VGS2 ∆T IDSS1 IDSS2 gfs1 gfs2 CMRR CHARACTERISTIC Differential Gate to Source Cutoff Voltage MIN TYP MAX UNITS U/SST440 10 U/SST441 20 Differential Gate to Source Cutoff Voltage Change with Temperature 20 CONDITIONS mV VDG = 10V, ID = 5mA µV/°C VDG = 10V, ID = 5mA TA = -55 to +125°C Gate to Source Saturation Current Ratio 0.07 VDS = 10V, VGS = 0V Forward Transconductance Ratio2 0.97 VDS = 10V, ID = 5mA, f = 1kHz Common Mode Rejection Ratio 85 dB VDG = 5 to 10V, ID = 5mA ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN BVGSS Gate to Source Breakdown Voltage -25 VGS(off) Gate to Source Cutoff Voltage -1 -3.5 6 3 TYP MAX UNITS V IG = -1µA, VDS = 0V -6 V VDS = 10V, ID = 1nA mA IDSS Gate to Source Saturation Current 15 30 IGSS Gate Leakage Current -1 -500 IG Gate Operating Current -1 -500 Linear Integrated Systems CONDITIONS pA VDS = 10V, VGS = 0V VGS = -15V, VDS = 0V VDG = 10V, ID = 5mA • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261 ELECTRICAL CHARACTERISTICS CONTINUED @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP gfs Forward Transconductance 4.5 6 9 mS gos Output Conductance 70 200 µS Ciss Input Capacitance 3 Crss Reverse Transfer Capacitance 1 en Equivalent Input Noise Voltage 4 MAX UNITS VDS = 10V, ID = 5mA, f = 1MHz nV/√Hz VDS = 10V, ID = 5mA, f = 10kHz SOIC Six Lead 0.230 DIA. 0.209 0.030 MAX. 0.014 0.018 0.021 0.150 0.115 6 LEADS VDS = 10V, ID = 5mA, f = 1kHz pF TO-71 0.195 DIA. 0.175 CONDITIONS 0.500 MIN. 1 8 2 7 3 6 4 5 0.150 0.157 0.0075 0.0098 0.050 2 3 0.046 0.036 1. 0.2284 0.2440 DIMENSIONS IN INCHES 5 6 1 45° 0.189 0.196 0.0040 0.0098 0.019 DIA. 0.016 0.100 0.050 7 0.048 0.028 Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. Pulse Test: PW ≤ 300µs Duty Cycle ≤ 3% 3. Assumes smaller value in numerator. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261