TI SN75374

SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
•
•
•
•
D OR N PACKAGE
(TOP VIEW)
Quadruple Circuits Capable of Driving
High-Capacitance Loads at High Speeds
Output Supply Voltage Range From 5 V
to 24 V
Low Standby Power Dissipation
VCC3 Supply Maximizes Output Source
Voltage
VCC2
1Y
1A
1E1
1E2
2A
2Y
GND
description
The SN75374 is a quadruple NAND interface
circuit designed to drive power MOSFETs from
TTL inputs. It provides the high current and
voltage necessary to drive large capacitive loads
at high speeds.
logic symbol†
1E1
1E2
2E1
2E2
1A
2A
3A
4A
4
5
12
13
3
&
&
2
15
3
14
4
13
5
12
6
11
7
10
8
9
VCC1
4Y
4A
2E2
2E1
3A
3Y
VCC3
VCC1
VCC3
VCC2
To Other
Drivers
Input A
Enable
E1
Enable
E2
Output
Y
EN1
GND
To Other
Drivers
EN2
TTL/MOS
6
11
16
schematic (each driver)
The outputs can be switched very close to the
VCC2 supply rail when VCC3 is about 3 V higher
than VCC2. VCC3 can also be tied directly to VCC2
when the source voltage requirements are lower.
The SN75374 is characterized for operation from
0°C to 70°C.
1
TTL/MOS
14
1
2
2
7
10
15
logic diagram (positive logic)
1Y
1E1
2Y
1E2
3Y
2E1
4Y
2E2
(7-48)
4
5
12
13
2
3
7
† This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12
1Y
1A
2A
3A
6
11
10
15
4A
14
2Y
3Y
4Y
Copyright  1988, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3–1
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range of VCC1 (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 7 V
Supply voltage range of VCC2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 25 V
Supply voltage range of VCC3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 0.5 V to 30 V
Input voltage, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5 V
Peak output current, II (tw < 10 ms, duty cycle < 50%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTE 1: Voltage values are with respect to network ground terminal.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TA = 25°C
TA = 70° C
POWER RATING
D
950 mW
7.6 mW/°C
608 mW
N
1150 mW
9.2 mW/°C
736 mW
recommended operating conditions
MIN
NOM
MAX
UNIT
Supply voltage, VCC1
4.75
5
5.25
V
Supply voltage, VCC2
4.75
20
24
V
Supply voltage, VCC3
VCC2
0
24
28
V
4
10
V
Voltage difference between supply voltages: VCC3 – VCC2
High-level input voltage, VIH
2
Low-level input voltage, VIL
High-level output current, IOH
High-level output current, IOL
Operating free-air temperature, TA
3–2
0
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
V
0.8
V
– 10
mA
40
mA
70
°C
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
electrical characteristics over recommended ranges of VCC1, VCC2, VCC3, and operating free-air
temperature (unless otherwise noted)
PARAMETER
VIK
VOH
TEST CONDITIONS
Input clamp voltage
II = – 12 mA
VCC3 = VCC2 + 3 V,
High level output voltage
High-level
VIL = 0.8 V,
VIL = 0.8 V,
IOH = – 100 µA
IOH = – 10 mA
VCC2 – 0.3
VCC2 – 1.3
VIL = 0.8 V,
VIL = 0.8 V,
IOH = – 50 µA
IOH = – 10 mA
VCC2 – 1
VCC2 – 2.5
VCC2 = 15 V to 28 V,
IOL = 10 mA
VIH = 2 V,
IOL = 40 mA
IF = 20 mA
VCC3 = VCC2 + 3 V,
VCC3 = VCC2,
VCC3 = VCC2,
VIH = 2 V,
VOL
Low level output voltage
Low-level
VF
Output clamp-diode
forward voltage
VI = 0,
0
II
Input current at
maximum input voltage
VI = 5
5.5
5V
IIH
High-level
g
input current
Any A
IIL
low-level
input current
Any A
ICC1(H)
Supply
y current from
VCC1, all outputs high
ICC2(H)
Supply
y current from
VCC2, all outputs high
ICC3(H)
Any E
TYP†
MIN
MAX
UNIT
– 1.5
V
VCC2 – 0.1
VCC2 – 0.9
VCC2 – 0.7
V
VCC2 – 1.8
0.15
0.3
0.25
0.5
15
1.5
1
40
VI = 2
2.4
4V
80
–1
– 1.6
–2
– 3.2
4
8
22
– 2.2
0 25
0.25
Supply
y current from
VCC3, all outputs high
22
2.2
35
3.5
ICC1(L)
Supply
y current from
VCC1, all outputs low
31
47
ICC2(L)
Supply
y current from
VCC2, all outputs low
ICC3(L)
Supply
y current from
VCC1, all outputs low
ICC2(H)
Supply
y current from
VCC2, all outputs high
ICC3(H)
Supply current from
Any E
VI = 0
0.4
4V
VCC1 = 5.25 V,,
All inputs at 0 V,
VCC1 = 5.25 V,,
All inputs at 5 V,
VCC2 = 24 V,,
No load
VCC2 = 24 V,,
No load
VCC3 = 28 V,,
VCC3 = 28 V,,
2
16
V
V
mA
µA
mA
mA
mA
27
0 25
0.25
VCC1 = 5.25 V,
All inputs at 0 V,
VCC2 = 24 V,
No load
VCC3 = 24 V,
VCC1 = 0,
All inputs at 0 V,
VCC2 = 24 V,
No load
VCC3 = 24 V,
mA
05
0.5
VCC3, all outputs high
ICC2(S)
Supply
y current from
VCC2, standby condition
ICC3(S)
Supply
y current from
VCC3, standby condition
0 25
0.25
mA
05
0.5
† All typical values are at VCC1 = 5 V, VCC2 = 20 V, VCC3 = 24 V, and TA = 25°C except for VOH for which VCC2 and VCC3 are as stated under test
conditions.
switching characteristics, VCC1 = 5 V, VCC2 = 20 V, VCC3 = 24 V, TA = 25°C
PARAMETER
TEST CONDITIONS
tDLH
tDHL
Delay time, low-to-high-level output
tPLH
tPHL
Propagation delay time, low-to-high-level output
tTLH
tTHL
MIN
Delay time, high-to-low-level output
TYP
MAX
20
30
UNIT
ns
10
20
ns
10
40
60
ns
10
30
50
ns
Transition time, low-to-high-level output
20
30
ns
Transition time, high-to-low-level output
20
30
ns
Propagation delay time, high-to-low-level output
POST OFFICE BOX 655303
CL = 200 pF
RD = 24 Ω
Ω,
See Figure 1
• DALLAS, TEXAS 75265
3–3
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
PARAMETER MEASUREMENT INFORMATION
5V
Input
24 V
20 V
VCC1 VCC2
VCC3
RD
Pulse
Generator
(see Note A)
Output
CL = 200 pF
(see Note B)
GND
2.4 V
TEST CIRCUIT
≤ 10 ns
≤ 10 ns
3V
90%
90%
Input
1.5 V
1.5 V
0.5 µs
t PHL
10%
t DHL
10%
0V
t PLH
t TLH
t THL
VCC2 – 2 V
VOH
VCC2 – 2 V
t DLH
Output
2V
2V
VOLTAGE WAVEFORMS
Figure 1. Test Circuit and Voltage Waveforms, Each Driver
NOTES: A. The pulse generator has the following characteristics: PRR = 1 MHz, ZO ≈ 50 Ω .
B. CL includes probe and jig capacitance.
3–4
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
VOL
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
VCC2
VOH
VOH – High-Level Output Voltage – V
VOH
VOH – High-Level Output Voltage – V
VCC2
– 0.5
TA = 70°C
–1
TA = 0°C
– 1.5
ÁÁ
ÁÁ
–2
–3
– 0.01
– 0.5
–1
TA = 25°C
– 1.5
ÁÁ
ÁÁ
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
VI = 0.8 V
– 2.5
– 0.1
–1
– 10
VCC1 = 5 V
VCC2 = VCC3 = 20 V
V1 = 0.8 V
TA = 70°C
TA = 0°C
–2
– 2.5
–3
– 0.01
– 100
IOH – High-Level Output Current – mA
– 0.1
Figure 2
– 100
VOLTAGE TRANSFER CHARACTERISTICS
24
0.5
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
VI = 2 V
0.4
20
– Output Voltage – V
VVO
O
VOL
VOL – Low-Level Output Voltage – V
– 10
Figure 3
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
ÁÁ
ÁÁ
ÁÁ
–1
IOH – High-Level Output Current – mA
TA = 70°C
0.3
TA = 0°C
16
12
ÁÁ
ÁÁ
0.2
0.1
0
8
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
TA = 25°C
No Load
4
0
0
20
40
60
80
100
0
IOL – Low-Level Output Current – mA
Figure 4
0.5
1
1.5
VI – Input Voltage – V
2
2.5
Figure 5
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3–5
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW-TO-HIGH-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
PROPAGATION DELAY TIME
HIGH-TO-LOW-LEVEL OUTPUT
vs
FREE-AIR TEMPERATURE
250
250
CL = 4000 pF
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
RD = 24 Ω
See Figure 1
200
175
225
ttPLH
PHL – Propagation Delay Time,
High-to-Low-Level Output – ns
ttPLH
PLH – Propagation Delay Time,
Low-to-High-Level Output – ns
225
CL = 2000 pF
150
125
100
CL = 1000 pF
75
50
CL = 200 pF
25
CL = 4000 pF
200
VCC1 = 5V
VCC2 = 20V
VCC3 = 24V
RD = 24 Ω
See Figure 1
175
150
125
100
CL = 1000 pF
75
50
CL = 200 pF
25
CL = 50 pF
0
CL = 50 pF
0
0
10
20
30
40
50
60
TA – Free-Air Temperature – °C
70
80
0
10
20
30
40
50
60
TA – Free-Air Temperature – °C
Figure 6
80
PROPAGATION DELAY TIME
HIGH-TO-LOW-LEVEL OUTPUT
vs
VCC2 SUPPLY VOLTAGE
250
250
200
CL = 4000 pF
175
150
CL = 2000 pF
125
100
75
CL = 1000 pF
50
CL = 50 pF
VCC1 = 5 V
VCC3 = VCC2+ 4 V
CL = 4000 pF
RD = 24 Ω
TA = 25°C
See Figure 1
225
ttPLH
PHL – Propagation Delay Time,
High-to-Low-Level Output – ns
VCC1 = 5 V
VCC3 = VCC2+ 4 V
RD = 24 Ω
TA = 25°C
See Figure 1
225
ttPLH
PLH – Propagation Delay Time,
Low-to-High-Level Output – ns
70
Figure 7
PROPAGATION DELAY TIME
LOW-TO-HIIGH-LEVEL OUTPUT
vs
VCC2 SUPPLY VOLTAGE
CL = 200 pF
200
175
150
CL = 2000 pF
125
100
75
CL = 1000 pF
50
CL = 50 pF
25
CL = 200 pF
25
0
0
0
5
10
15
20
VCC2 – Supply Voltage – V
25
0
Figure 8
3–6
CL = 2000 pF
5
10
15
20
VCC2 – Supply Voltage – V
Figure 9
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
25
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
TYPICAL CHARACTERISTICS
PROPAGATION DELAY TIME
LOW-TO-HIGH-LEVEL OUTPUT
vs
LOAD CAPACITANCE
PROPAGATION DELAY TIME
HIGH-TO-LOW-LEVEL OUTPUT
vs
LOAD CAPACITANCE
250
250
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
TA = 25°C
See Figure 1
200
175
RD = 24 Ω
150
RD = 10 Ω
125
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
TA = 25°C
See Figure 1
225
ttPLH
PHL – Propagation Delay Time,
High-to-Low-Level Output – ns
ttPLH
PLH – Propagation Delay Time,
Low-to-High-Level Output – ns
225
RD = 0
100
75
50
25
200
175
RD = 24 Ω
150
RD = 10 Ω
RD = 0
125
100
75
50
25
0
0
1000
2000
3000
0
4000
0
CL – Load Capacitance – pF
1000
2000
3000
4000
CL – Load Capacitance – pF
Figure 10
Figure 11
PT
PD – Power Dissipation – mW
POWER DISSIPATION (ALL DRIVERS)
vs
FREQUENCY
2000
1800
VCC1 = 5 V
VCC2 = 20 V
VCC3 = 24 V
Input: 3-V Square Wave
(50% duty cycle)
TA = 25°C
1600
CL = 600 pF
CL = 1000 pF
1400
1200
1000
CL = 2000 pF
800
600
CL = 4000 pF
400
CL = 400 pF
200
0
10
20
40
70 100
200
f – Frequency – khz
400
1000
Figure 12
NOTE: For RD = 0, operation with CL > 2000 pF violates absolute maximum current rating.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3–7
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
THERMAL INFORMATION
power dissipation precautions
Significant power may be dissipated in the SN75374 driver when charging and discharging high-capacitance
loads over a wide voltage range at high frequencies. Figure 12 shows the power dissipated in a typical SN75374
as a function of frequency and load capacitance. Average power dissipated by this driver is derived from the
equation
PT(AV) = PDC(AV) + PC(AV) + PS(AV)
where PDC(AV) is the steady-state power dissipation with the output high or low, PC(AV) is the power level during
charging or discharging of the load capacitance, and PS(AV) is the power dissipation during switching between
the low and high levels. None of these include energy transferred to the load and all are averaged over a full
cycle.
The power components per driver channel are
P
P
P
+
DC(AV)
C(AV)
P t
HH
t LH
tH
C
P
t HL
T
[ C V2 f
+
S(AV)
) PLtL
t
LH LH
) PHLt HL
tL
T
T = 1/f
Figure 13. Output Voltage Waveform
where the times are as defined in Figure 15.
3–8
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
THERMAL INFORMATION
PL, PH, PLH, and PHL are the respective instantaneous levels of power dissipation, C is the load capacitance.
VC is the voltage across the load capacitance during the charge cycle shown by the equation
VC = VOH – VOL
PS(AV) may be ignored for power calculations at low frequencies.
In the following power calculation, all four channels are operating under identical conditions: f = 0.2 MHz,
VOH = 19.9 V and VOL = 0.15 V with VCC1 = 5 V, VCC2 = 20 V, VCC3 = 24 V, VC = 19.75 V, C = 1000 pF, and the
duty cycle = 60%. At 0.2 MHz for CL < 2000 pF, PS(AV) is negligible and can be ignored. When the output voltage
is low, ICC2 is negligible and can be ignored.
ƪ ǒ Ǔ ) ǒ* Ǔ ) ǒ Ǔƫ
ƪ ǒ Ǔ ) ǒ Ǔ ) ǒ Ǔƫ
On a per-channel basis using data sheet values,
P
DC(AV)
+
(5 V) 4 mA
4
(5 V) 31 mA
4
(20 V)
2.2 mA
4
(20 V) 0 mA
4
(24 V) 2.2 mA (0.6)
4
)
(24 V) 16 mA (0.4)
4
PDC(AV) = 58.2 mW per channel
Power during the charging time of the load capacitance is
PC(AV) = (1000 pF) (19.75 V)2 (0.2 MHz) = 78 mW per channel
Total power for each driver is
PT(AV) = 58.2 mW + 78 mW = 136.2 mW
The total package power is
PT(AV) = (136.2) (4) = 544.8 mW
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3–9
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
APPLICATION INFORMATION
driving power MOSFETs
The drive requirements of power MOSFETs are much lower than comparable bipolar power transistors. The
input impedance of a FET consists of a reverse biased PN junction that can be described as a large capacitance
in parallel with a very high resistance. For this reason, the commonly used open-collector driver with a pullup
resistor is not satisfactory for high-speed applications. In Figure 13(a), an IRF151 power MOSFET switching
an inductive load is driven by an open-collector transistor driver with a 470-Ω pullup resistor. The input
capacitance (CISS) specification for an IRF151 is 4000 pF maximum. The resulting long turn-on time due to the
product of input capacitance and the pullup resistor is shown in Figure 13(b).
48 V
5V
470 Ω
4
8
IRF151
7
3
TLC555
6
2
5
1/2
1
SN75447
VOH
VOH –VVOl
OL – Gate Voltage – V
M
4
3
2
ÁÁ
ÁÁ
ÁÁ
ÁÁ
1
0
0
0.5
1
1.5
2
2.5
3
t – Time – µs
(a)
(b)
Figure 14. Power MOSFET Drive Using SN75447
A faster, more efficient drive circuit uses an active pull-up as well as an active pull-down output configuration,
referred to as a totem-pole output. The SN75374 driver provides the high-speed totem-pole drive desired in an
application of this type, see Figure 14(a). The resulting faster switching speeds are shown in Figure 14(b).
48 V
5V
4
8
7
6
TLC555
2
3
5
IRF151
1/4
SN75374
1
(a)
VOH
VOH –VVOl
OL – Gate Voltage – V
M
4
3
ÁÁÁ
ÁÁÁ
ÁÁÁ
ÁÁÁ
2
1
0
0
0.5
1.5
2
t – Time – µs
(b)
Figure 15. Power MOSFET Drive Using SN75374
3–10
1
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
2.5
3
SN75374
QUADRUPLE MOSFET DRIVER
SLRS028 – SEPTEMBER 1988
APPLICATION INFORMATION
Power MOSFET drivers must be capable of supplying high peak currents to achieve fast switching speeds as
shown by the equation
I
PK
+ VC
tr
where C is the capacitive load, and tr is the desired rise time. V is the voltage that the capacitance is charged
to. In the circuit shown in Figure 14(a), V is found by the equation
V = VOH – VOL
Peak current required to maintain a rise time of 100 ns in the circuit of Figure 14(a) is
I
PK
* 0)4(10 * 9) + 120 mA
+ (3 100(10
* 9)
Circuit capacitance can be ignored because it is very small compared to the input capacitance of the IRF151.
With a VCC of 5 V and assuming worst-case conditions, the gate drive voltage is 3 V.
For applications in which the full voltage of VCC2 must be supplied to the MOSFET gate, VCC3 should be at least
3 V higher than VCC2.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
3–11
3–12
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Copyright  1998, Texas Instruments Incorporated