CC1190 www.ti.com SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 850 – 950 MHz RF Front End Check for Samples: CC1190 FEATURES APPLICATIONS • • • • • • • • 1 • • • • • • • • • • Seamless Interface to Sub-1 GHz Low Power RF Devices from Texas Instruments Up to 27 dBm (0.5 W) Output Power 6 dB Typical Sensitivity Improvement with CC11xx and CC430 Few External Components – Integrated PA – Integrated LNA – Integrated Switches – Integrated Matching Network – Integrated Inductors Digital Control of LNA and PA Gain by HGM Pin 50-nA in Power Down (LNA_EN = PA_EN = 0) High Transmit Power Efficiency – PAE = 50% at 26 dBm Output Power Low Receive Current Consumption – 3 mA for High Gain Mode – 26 µA for Low Gain Mode 2.9 dB LNA Noise Figure, Including Switch and External Antenna Match RoHS Compliant 4-mm × 4-mm QFN-16 Package 2 V to 3.7 V Operation 850 - 950 MHz ISM Bands Wireless Systems Wireless Sensor Networks Wireless Industrial Systems IEEE 802.15.4 Systems Wireless Consumer Systems Wireless Metering (AMR/AMI) Systems Smart Grid Wireless Networks DESCRIPTION CC1190 is a cost-effective and high-performance RF Front End for low-power and low-voltage wireless applications at 850 - 950 MHz. CC1190 is a range extender for the sub-1 GHz low-power RF transceivers, transmitters, and System-on-Chip devices from Texas Instruments. CC1190 integrates a power amplifier (PA), a low-noise amplifier (LNA), switches, and RF matching for the design of a high-performance wireless systems. CC1190 increases the link budget by providing a power amplifier for increased output power, and an LNA with low noise figure for improved receiver sensitivity. CC1190 provides an efficient and easy-to-use range extender in a compact 4-mm × 4-mm QFN-16 package. CC1190 BLOCK DIAGRAM VDD_LNA VDD_PA1 VDD_PA2 PA_OUT PA PA_IN PREAMP EN EN TR_SW LNA_OUT LNA EN LNA_IN LOGIC PA_EN LNA_EN BIAS BIAS HGM 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009–2010, Texas Instruments Incorporated CC1190 SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION DEVICE TEMPERATURE PACKAGE (1) -40°C to 85°C QFN (RVG) 16 CC1190RGVR CC1190RGVT (1) TRANSPORTION MEDIA Tape and Reel, 2500 Tape and Reel, 250 For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. ABSOLUTE MAXIMUM RATINGS Under no circumstances must the absolute maximum ratings be violated. Stress exceeding one or more of the limiting values may cause permanent damage to the device. Supply voltage, VDD All supply pins must have the same voltage Voltage on any digital pin VALUE UNIT –0.3 to 3.8 V –0.3 to VDD + 0.3, max 3.8 V 10 dBm Input RF level Storage temperature range ESD –50 to 150 °C Human-body model, non RF pins 2000 V Human-body model, RF pins: PA_IN, PA_OUT, TR_SW, LNA_IN, LNA_OUT 1500 V Charged device model 1000 V RECOMMENDED OPERATING CONDITIONS Ambient temperature range MIN MAX –40 85 °C 2 3.7 V 850 950 MHz Operating supply voltage Operating frequency range UNIT ELECTRICAL CHARACTERISTICS TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation. PARAMETER Receive current TEST CONDITIONS MIN 2 MAX UNIT 3 mA PIN = -40 dBm, HGM = 0 26 µA PIN = 5 dBm, POUT = 26.5 dBm, HGM = 1 Transmit current TYP PIN = -40 dBm, HGM = 1 302 No input signal, HGM = 1 56 No input signal, HGM = 0 29 Power down current LNA_EN = PA_EN = 0 High input level (control pins) HGM, LNA_EN, PA_EN Low input level (control pins) HGM, LNA_EN, PA_EN 50 1.3 mA 200 nA VDD V 0.3 V Power down → Receive mode, switching time 300 ns Power down → Transmit mode, switching time 600 ns Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 CC1190 www.ti.com SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 ELECTRICAL CHARACTERISTICS (continued) TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RF Receive Gain PIN = -40 dBm, HGM = 1 11.6 PIN = -40 dBm, HGM = 0 -6 Gain variation over frequency 850–950 MHz, PIN = -40 dBm, HGM = 1 Gain variation over power supply 2 – 3.7 V, PIN = -40 dBm, HGM = 1 Noise figure 1.2 dB 1 dB HGM = 1, including internal switch and external antenna match 2.9 dB HGM = 0, including internal switch and external antenna match 6.2 dBm HGM = 1 -12.3 HGM = 0 11.2 Input IP3, High Gain Mode HGM = 1 -5 Input reflection coefficient, S11, High Gain Mode HGM = 1, measured at antenna port, depends on external antenna and LNA match Input 1 dB compression dB -11.5 dBm dBm dB RF Transmit Gain Maximum Output Power Output power, POUT PIN = -20 dBm, HGM = 1 27.9 PIN = -20 dBm, HGM = 0 24.6 PIN = 5 dBm, HGM = 1, VDD = 3.7 V 27.7 PIN = 5 dBm, HGM = 1 26.5 PIN = 0 dBm, HGM = 1 25.5 PIN = -6 dBm, HGM = 1 Power Added Efficiency, PAE Output 1 dB compression Output power variation over frequency PIN = 5 dBm, HGM = 1 24 23.7 Output power variation over temperature -40°C – 85°C, PIN = 5 dBm, HGM = 1 2nd harmonic power HGM = 1, PIN = 5 dBm See application note AN001 (SWRA090) for regulatory requirements. 3rd harmonic power Input reflection coefficient, S11 HGM = 1, measured at SMA connector on PA_IN/LNA_OUT (TX active) Product Folder Link(s) :CC1190 dBm 1.7 dB 4.5 dB 1 dB 2.5 -37 -10 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated dBm 48% HGM = 0 Output power variation over power supply 2 V – 3.7 V, PIN = 5 dBm, HGM = 1 dBm 22 HGM = 1 850 – 950 MHz, PIN = 5 dBm, HGM = 1 dB dBm dB 3 CC1190 SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com DEVICE INFORMATION GND 1 PA_OUT 2 VDD_PA1 VDD_PA2 BIAS VDD_LNA QFN-16 PACKAGE TOP VIEW 16 15 14 13 12 GND 11 PA_IN 10 LNA_OUT 4x4 QFN-16 9 5 6 7 8 PA_EN 4 LNA_EN TR_SW HGM 3 LNA_IN GND GND NOTE The exposed die attach pad must be connected to a solid ground plane as this is the primary ground connection for the chip. Inductance in vias to the pad should be minimized. Following the CC1190EM reference layout is recommended. Changes will alter the performance. Also see the PCB land pattern information in this data sheet. PIN FUNCTIONS PIN 4 I/O DESCRIPTION NO. NAME - GND Ground The exposed die attach pad must be connected to a solid ground plane. See CC1190EM (SWRR064) reference design for recommended layout. 1 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer. 2 PA_OUT RF 3 GND Ground 4 TR_SW RF RXTX switch pin. 5 LAN_IN RF Input of LNA. 6 HGM Digital Input Digital control pin. HGM = 1 → Device in High Gain Mode. HGM = 0 → Device in Low Gain Mode. 7 LNA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details. 8 PA_EN Digital Input Digital control pin. See Table 2 and Table 3 for details. 9 GND Ground 10 LNA_OUT RF Output of LNA. 11 PA_IN RF Input of PA. 12 GND Ground Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer. 13 VDD_LNA Power 2 – 3.7 V Supply Voltage. 14 BIAS Analog Biasing input. Resistor between this node and ground sets bias current. 15 VDD_PA2 Power 2 – 3.7 V Supply Voltage. 16 VDD_PA1 Power 2 – 3.7 V Supply Voltage. Output of PA. Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer. Secondary ground connection. Should be shorted to the die attach pad on the top PCB layer. Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 CC1190 www.ti.com SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 CC1190EM Evaluation Module L23 C21 PA_OUT C28 C25 C24 VDD_LNA L24 VDD_PA1 L21 SMA VDD_PA2 VDD VDD C111 SMA PA_IN LNA_OUT L22 C101 C22 CC1190 TR_SW PA_EN C51 PA_EN LNA_EN LNA_IN LNA_EN HGM BIAS HGM R141 Figure 1. CC1190EM Evaluation Module Table 1. List of Materials Optimized for 915 MHz Operation (See the CC1190EM Reference Design, SWRR064) DEVICE FUNCTION VALUE L21 PA load inductor 10 nH, LQW18AN10NG10 from Murata L22 RXTX switch and LNA match 7.5 nH, LQW15AN7N5G00 from Murata L23 Part of antenna match 2.2 nH, LQW15AN2N2C10D from Murata L24 Part of antenna match 3.9 nH, LQW15AN3N9C00 from Murata C21 DC block 47 pF, GRM1555C1H470JZ01D from Murata C22 RXTX switch and LNA match 12 pF, GRM1555C1H120JZ01D from Murata C24 Part of antenna match 3.3 pF: GRM1555C1H3R3CZ01D from Murata C25 Part of antenna match 8.2 pF: GRM1555C1H8R2CZ01D from Murata C28 Part of antenna match 0.5 pF, GRM1555C1HR50CZ01D from Murata C51 Part of LNA match 12 pF, GRM1555C1H120JZ01D from Murata C101 DC block 47 pF: GRM1555C1H470JZ01D from Murata C111 DC block 47 pF: GRM1555C1H470JZ01D from Murata R141 Bias resistor 3.3 kΩ, RK73H1ETTP3301F from Koa Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 5 CC1190 SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com TYPICAL CHARACTERISTICS TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation. 11.7 GAIN -5 -5.2 11.5 11.3 2.95 11.1 2.90 10.9 NF 2.85 HGM GAIN -5.4 12.0 HGM Gain - dB 3.00 LNA Gain in HGM - dB Noise Figure in HGM - dB 3.05 12.5 -5.6 -5.8 11.5 LGM GAIN -6 -6.2 11.0 10.7 2.80 850 860 870 880 890 900 910 920 -6.4 10.5 940 950 930 LGM Gain - dB 3.10 10.5 -40 -30 -20 -10 0 10 20 -6.6 30 40 50 60 70 80 90 o Frequency - MHz Temperature - C Figure 2. LNA Gain and Noise Figure vs Operating Frequency Figure 3. LNA Gain vs Temperature SPACER -5.8 12.0 -5.85 11.9 HGM GAIN LGM GAIN 11.6 -6 11.5 -6.05 11.4 -6.1 11.3 -6.15 11.2 S (1,1) HGM Gain - dB -5.95 11.7 LGM Gain - dB -5.9 11.8 -6.2 2 2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 Supply Voltage - V Frequency (850 MHz to 950 MHz) Figure 5. Input Impedance of LNA Measured from Antenna Port on CC1190EM (RX Active) 60 400 60 50 350 55 40 300 50 360 340 250 200 20 POUT 10 150 I_VDD PAE - %, POUT - dBm PAE 30 Current - mA PAE - %, POUT - dBm I_VDD 300 40 280 35 260 100 -10 50 25 0 20 850 860 -35 -30 -25 -20 -15 -10 -5 0 5 30 240 POUT 220 870 880 890 900 910 920 930 940 200 950 Frequency - MHz Pin - dBm Figure 6. PA Output Power, PAE and Current Consumption vs Input Power 6 320 45 0 -20 -40 PAE Current - mA Figure 4. LNA Gain vs Supply Voltage Figure 7. PA Output Power, PAE and Current Consumption vs Operating Frequency at 5 dBm Input Power Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 CC1190 www.ti.com SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 TYPICAL CHARACTERISTICS (continued) TC = 25°C, VDD = 3 V, fRF = 915 MHz (unless otherwise noted). Measured on CC1190EM reference design including external matching components optimized for 915 MHz operation. 50 340 50 320 300 45 I_VDD 40 280 260 35 30 240 POUT 25 20 -40 -30 -20 -10 0 10 20 30 40 50 60 PAE 325 300 45 275 40 I_VDD 35 250 30 220 25 200 20 70 80 350 Current - mA PAE 55 Current - mA PAE - %, POUT - dBm 55 360 PAE - %, POUT - dBm 60 225 POUT 200 175 2 2.2 o 2.4 2.6 2.8 3 3.2 3.4 3.6 Supply Voltage - V Temperature - C Figure 9. PA Output Power, PAE and Current Consumption vs Supply Voltage at 5 dBm Input Power S (1,1) Figure 8. PA Output Power, PAE and Current Consumption vs Temperature at 5 dBm Input Power Frequency (850 MHz to 950 MHz) Figure 10. Input Impedance Measured at SMA connector on PA_IN/LNA_OUT on CC1190EM (TX Active) Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 7 CC1190 SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com INTERFACE AND CONTROL Controlling the Output Power from CC1190 The output power of CC1190 is controlled by controlling the input power. The CC1190 PA is designed to work in compression (class AB), and the best efficiency is reached when a strong input signal is applied. The output power can be reduced by setting the pin HGM low. If a reduced maximum output power is wanted, the impedance seen by the PA should be increased, thus increasing the PA efficiency by changing the output matching network. Input Levels on Control Pins The three digital control pins (PA_EN, LNA_EN, HGM) have built-in level-shifting functionality, meaning that if CC1190 is operating from a 3.6 V supply voltage, the control pins will still sense 1.6 - 1.8 V signals as logical '1'. An example of the above is that PA_EN is connected directly to the PA_EN pin on CC110x, but the global supply voltage is 3.6 V. The PA_EN pin on CC110x will switch between 0 V (RX) and 1.8 V (TX), and this is still a high enough voltage to control the operating mode of CC1190. However, the input voltages should not have logical '1' level that is higher than the supply. Connecting CC1190 to a CC102X Device Table 2. Control Logic for Connecting CC1190 to a CC102X Device PA_EN LNA_EN HGM Mode Of Operation 0 0 don't care Power Down 0 1 0 RX Low Gain Mode 0 1 1 RX High Gain Mode 1 0 0 TX Low Gain Mode 1 0 1 TX High Gain Mode VDD_LNA VDD_PA1 VDD_PA2 VDD PA_IN LNA_OUT RF_OUT SAW RF__IN PA_OUT CC102X CC1190 TR_SW PA_EN BIAS LNA_IN PA_EN LNA_EN LNA_EN HGM Connected to VDD/GND/MCU Figure 11. CC1190 + CC102X Application Circuit 8 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 CC1190 www.ti.com SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 Connecting CC1190 to a CC110X Device Table 3. Control Logic for Connecting CC1190 to a CC110X Device PA_EN LNA_EN HGM Mode Of Operation 0 0 don't care Power Down 0 1 0 RX Low Gain Mode 0 1 1 RX High Gain Mode 1 0 0 TX Low Gain Mode 1 0 1 TX High Gain Mode VDD_LNA VDD_PA2 VDD_PA1 VDD PA_IN LNA_OUT RF_P SAW RF_N PA_OUT CC110X CC1190 TR_SW PA_EN LNA_IN PA_EN BIAS LNA_EN HGM Connected to MCU Connected to VDD/GND/MCU Figure 12. CC1190 + CC110X Application Circuit Connecting CC1190 to a CC430 or CC111X Device Table 4. Control Logic for Connecting CC1190 to a CC430 or CC111X Device PA_EN LNA_EN HGM Mode Of Operation 0 0 don't care Power Down 0 1 0 RX Low Gain Mode 0 1 1 RX High Gain Mode 1 0 0 TX Low Gain Mode 1 0 1 TX High Gain Mode VDD_LNA VDD_PA1 VDD_PA2 VDD PA_IN LNA_OUT RF_P SAW RF_N PA_OUT CC430/CC111X CC1190 TR_SW PA_EN BIAS LNA_IN PA_EN LNA_EN LNA_EN HGM Connected to VDD/GND/SoC Figure 13. CC1190 + CC430/CC111X Application Circuit Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 9 CC1190 SWRS089 A – NOVEMBER 2009 – REVISED FEBRUARY 2010 www.ti.com REVISION HISTORY Changes from Original (November 2009) to Revision A • 10 Page Changed the data sheet from Product Preview to Production ............................................................................................. 1 Submit Documentation Feedback Copyright © 2009–2010, Texas Instruments Incorporated Product Folder Link(s) :CC1190 PACKAGE OPTION ADDENDUM www.ti.com 10-Feb-2010 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty CC1190RGVR ACTIVE VQFN RGV 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-3-260C-168 HR CC1190RGVT ACTIVE VQFN RGV 16 250 CU NIPDAU Level-3-260C-168 HR Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Feb-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant CC1190RGVR VQFN RGV 16 2500 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 CC1190RGVT VQFN RGV 16 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Feb-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CC1190RGVR VQFN RGV 16 2500 338.1 338.1 20.6 CC1190RGVT VQFN RGV 16 250 338.1 338.1 20.6 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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