INA213-Q1
INA214-Q1
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SBOS475B – MARCH 2009 – REVISED JUNE 2010
VOLTAGE OUTPUT, HIGH OR LOW SIDE MEASUREMENT, BIDIRECTIONAL, ZERO-DRIFT
CURRENT SHUNT MONITOR
Check for Samples: INA213-Q1, INA214-Q1
FEATURES
APPLICATIONS
•
•
•
•
•
•
•
•
•
1
2
•
•
•
•
Qualified for Automotive Applications
Wide Common-Mode Range: –0.3 V to 26 V
Offset Voltage: ±100 µV (Max)
Enables Shunt Drops of 10 mV Full-Scale
Accuracy
– ±1% Gain Error (Max Over Temperature)
– 0.5 µV/°C Offset Drift (Max)
– 10 ppm/°C Gain Drift (Max)
Choice of Gain
– INA213: 50 V/V
– INA214: 100 V/V
Quiescent Current: 100 µA (Max)
SC70 Package
Notebook Computers
Cell Phones
Telecom Equipment
Power Management
Battery Chargers
Welding Equipment
DCK PACKAGE
(TOP VIEW)
REF
1
6
OUT
GND
2
5
IN-
V+
3
4
IN+
DESCRIPTION
The INA213 and INA214 are voltage-output current-shunt monitors that can sense drops across shunts at
common-mode voltages from –0.3 V to 26 V, independent of the supply voltage. The INA213 offers a fixed gain
of 50 V/V, and the INA214 offers a fixed gain of 100 V/V. The low offset of the zero-drift architecture enables
current sensing with maximum drops across the shunt as low as 10-mV full-scale.
The devices operate from a single 2.7-V to 26-V power supply, drawing a maximum of 100 µA of supply current.
They are specified over the operating temperature range of –40°C to 125°C and are offered in an SC70 package.
Reference
Voltage
REF
INA21x
GND
2.7 V to 26 V
CBYPASS
0.01 mF
to
0.1 mF
RSHUNT
Supply
Load
Output
OUT
R1
R3
R2
R4
IN-
IN+
V+
PRODUCT
GAIN
R3 and R4
R1 and R2
INA213
INA214
50
100
20 kW
10 kW
1 MW
1 MW
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2010, Texas Instruments Incorporated
INA213-Q1
INA214-Q1
SBOS475B – MARCH 2009 – REVISED JUNE 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
TJ
–40°C to 125°C
(1)
(2)
PACKAGE (2)
GAIN
ORDERABLE PART NUMBER
TOP-SIDE MARKING
50 V/V
SC70 – DCK
Reel of 3000
INA213AQDCKRQ1
OBX
100 V/V
SC70 – DCK
Reel of 3000
INA214AQDCKRQ1
OFT
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
VS
Supply voltage
VIN+
VIN–
Analog inputs voltage
VREF
REF input voltage
VOUT
Output voltage (3)
26 V
Differential (VIN+)–(VIN–)
(2)
Common-Mode
–26 V to 26 V
(3)
GND – 0.3 V to 26 V
GND – 0.3 V to V+ + 0.3 V
GND – 0.3 V to V+ + 0.3 V
(3)
IIN
Input current into any pin
qJA
Thermal impedance, junction to free air
TA
Operating temperature
–55°C to 150°C
Tstg
Storage temperature
–65°C to 150°C
TJ
Junction temperature
ESD
(1)
(2)
(3)
Electrostatic discharge rating
5 mA
250°C/W
150°C
Human Body Model (HBM)
3000 V
Charged-Device Model (CDM)
1000 V
Machine Model (MM)
150 V
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin may exceed the voltage shown if the current at that pin is limited to 5 mA.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
VS
Supply voltage
2.7
26
V
TJ
Junction temperature
–40
125
°C
2
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SBOS475B – MARCH 2009 – REVISED JUNE 2010
ELECTRICAL CHARACTERISTICS
VSENSE = VIN+ – VIN–, VS = +5 V, VIN+ = 12 V, VREF = VS/2 (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCM
Common-mode input
range
CMRR
Common-mode
rejection ratio
VIN+ = 0 V to 26 V,
VSENSE = 0 mV
VOS
Offset voltage
RTI (2), VSENSE = 0 mV
dVOS/dT
Offset voltage vs
temperature (3)
PSR
Offset voltage vs
power supply
IB
IOS
Full range
INA213
INA214
Full range
INA213
MIN
TYP
–0.3
MAX
UNIT
26
100
120
100
140
V
dB
±100
±1
±60
Full range
0.1
0.5
µV/°C
VS = 2.7 V to 18 V,
VIN+ = 18 V, VSENSE = 0 mV
25°C
±0.1
±10
µV/V
Input bias current
VSENSE = 0 mV
25°C
28
35
µA
Input offset current
VSENSE = 0 mV
25°C
Gain error
25°C
INA214
15
50
INA214
100
VSENSE = –5 mV to 5 mV
µV
±0.02
INA213
Gain error vs
temperature (3)
µA
V/V
Full range
±0.02
±1
%
Full range
3
10
ppm/°C
Nonlinearity error
VSENSE = –5 mV to 5 mV
25°C
±0.01
%
Maximum capacitive
load
No sustained oscillation
25°C
1
nF
Output voltage swing
to V+ power-supply
rail (4)
RL = 10 kΩ to GND
Output voltage swing
to GND
BW
Bandwidth
SR
Slew rate
Voltage noise density
(1)
(2)
(3)
(4)
(1)
±5
Gain
IQ
TA
Quiescent current
Full range
V+ – 0.05
V+ – 0.2
V
Full range
VGND +
0.005
VGND +
0.05
V
CLOAD = 10 pF
RTI (2)
VSENSE = 0 mV
25°C
14
kHz
25°C
0.4
V/µs
25°C
25
25°C
65
Full range
nV/√Hz
100
115
µA
Full range TA = –40°C to 125°C
RTI = referred to input
Not production tested
See Typical Characteristic, Output Voltage Swing vs Output Current (Figure 10).
Copyright © 2009–2010, Texas Instruments Incorporated
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TYPICAL CHARACTERISTICS
TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted)
INPUT OFFSET VOLTAGE
PRODUCTION DISTRIBUTION
OFFSET VOLTAGE
vs TEMPERATURE
100
80
Population
Offset Voltage (mV)
60
40
20
0
-20
-40
-60
30
35
20
25
15
5
10
0
-5
-10
-15
-20
-25
-30
-35
-80
-100
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Offset Voltage (mV)
Figure 1.
Figure 2.
COMMON-MODE REJECTION
PRODUCTION DISTRIBUTION
COMMON-MODE REJECTION RATIO
vs TEMPERATURE
5
4
Population
CMRR (mV/V)
3
2
1
0
-1
-2
-3
-5.0
-4.5
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-4
-5
-50
-25
Figure 3.
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25
50
75
100
125
150
Temperature (°C)
Common-Mode Rejection Ratio (mV/V)
4
0
Figure 4.
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SBOS475B – MARCH 2009 – REVISED JUNE 2010
TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted)
GAIN ERROR
PRODUCTION DISTRIBUTION
GAIN ERROR
vs TEMPERATURE
1.0
20 Typical Units Shown
0.8
Population
Gain Error (%)
0.6
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-1.0
-50
0
-25
125
POWER-SUPPLY REJECTION RATIO
vs FREQUENCY
60
140
50
120
40
30
20
VCM = 0V
VDIF = 15mVPP Sine
1k
80
60
VS = +5V + 250mV Sine Disturbance
VCM = 0V
VDIF = Shorted
VREF = 2.5V
20
0
10k
100k
1M
10M
150
100
40
10
100
100
GAIN
vs FREQUENCY
160
10
75
Figure 6.
70
-10
50
Figure 5.
|PSRR| (dB)
Gain (dB)
Gain Error (%)
0
25
Temperature (°C)
1
10
100
1k
Frequency (Hz)
Frequency (Hz)
Figure 7.
Figure 8.
Copyright © 2009–2010, Texas Instruments Incorporated
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10k
100k
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INA214-Q1
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TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted)
COMMON-MODE REJECTION RATIO
vs FREQUENCY
OUTPUT VOLTAGE SWING
vs OUTPUT CURRENT
160
Output Voltage Swing (V)
140
|CMRR| (dB)
120
100
80
60
VS = +5V
CM
V = 1V Sine
VDIF = Shorted
VREF = 2.5V
40
20
0
1
10
100
1k
10k
100k
V+
(V+) - 0.5
(V+) - 1
(V+) - 1.5
(V+) - 2
(V+) - 2.5
(V+) - 3
VS = 5V to 26V
VS = 2.7V
to 26V
VS = 2.7V
GND + 3
GND + 2.5
GND + 2
GND + 1.5
GND + 1
GND + 0.5
GND
1M
0
5
10
15
Frequency (Hz)
30
35
40
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = +5 V
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
with SUPPLY VOLTAGE = 0 V (Shutdown)
50
30
25
IB+, IB-, VREF = 0V
Input Bias Current (mA)
Input Bias Current (mA)
25
Figure 10.
30
20
IB+, IB-, VREF = 2.5V
10
0
20
IB+, VREF = 2.5V
15
10
5
IB+, IB-, VREF = 0V
and
IB-, VREF = 2.5V
0
-10
-5
0
5
10
15
20
25
30
0
10
15
20
25
Common-Mode Voltage (V)
Figure 11.
Figure 12.
INPUT BIAS CURRENT
vs TEMPERATURE
QUIESCENT CURRENT
vs TEMPERATURE
30
100
90
Quiescent Current (mA)
30
25
20
15
10
5
0
-50
5
Common-Mode Voltage (V)
35
Input Bias Current (mA)
20
Output Current (mA)
Figure 9.
40
6
TA = -40C
TA = +25C
TA = +125C
VS = 2.7V to 26V
80
70
60
50
40
30
20
10
-25
0
25
50
75
100
125
150
0
-50
0
-25
25
50
75
Temperature (°C)
Temperature (°C)
Figure 13.
Figure 14.
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100
125
150
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SBOS475B – MARCH 2009 – REVISED JUNE 2010
TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted)
INPUT-REFERRED VOLTAGE NOISE
vs FREQUENCY
0.1 Hz to 10 Hz VOLTAGE NOISE
(Referred-to-Input)
Referred-to-Input
Voltage Noise (200nV/div)
Input-Reffered Voltage Noise (nV/Öz)
100
10
VS = ±2.5V
VREF = 0V
VIN-, VIN+ = 0V
1
10
100
1k
10k
VS = ±2.5V
VCM = 0V
VDIF = 0V
VREF = 0V
Time (1s/div)
100k
Figure 16.
STEP RESPONSE
(10 mVPP Input Step)
COMMON-MODE VOLTAGE
TRANSIENT RESPONSE
Common-Mode Voltage (1V/div)
Figure 15.
2VPP Output Signal
Input Voltage
(5mV/diV)
10mVPP Input Signal
Common Voltage Step
0V
Output Voltage
0V
Time (50ms/div)
Time (100ms/div)
Figure 17.
Figure 18.
INVERTING DIFFERENTIAL INPUT OVERLOAD
NONINVERTING DIFFERENTIAL INPUT OVERLOAD
Inverting Input Overload
Noninverting Input Overload
2V/div
2V/div
Output Voltage (40mV/div)
Output Voltage
(0.5V/diV)
Frequency (Hz)
Output
Output
0V
0V
VS = 5V, VCM = 12V, VREF = 2.5V
VS = 5V, VCM = 12V, VREF = 2.5V
Time (250ms/div)
Time (250ms/div)
Figure 19.
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
TA = 25°C, VS = 5 V, VIN+ = 12 V, and VREF = VS/2 (unless otherwise noted)
START-UP RESPONSE
BROWNOUT RECOVERY
Supply Voltage
1V/div
1V/div
Supply Voltage
Output Voltage
Output Voltage
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
8
0V
VS = 5V, 1kHz Step with VDIFF = 0V, VREF = 2.5V
Time (100ms/div)
Time (100ms/div)
Figure 21.
Figure 22.
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SBOS475B – MARCH 2009 – REVISED JUNE 2010
APPLICATION INFORMATION
BASIC CONNECTIONS
Figure 23 shows the basic connections of the INA213 or INA214. The input pins, IN+ and IN–, should be
connected as closely as possible to the shunt resistor to minimize any resistance in series with the shunt
resistance.
REF
GND
2.7 V to 26 V
RSHUNT
Supply
Reference
Voltage
INA21x
OUT
R1
R3
R2
R4
Load
Output
IN-
IN+
V+
CBYPASS
0.01 mF
to
0.1 mF
Figure 23. Typical Application
Power-supply bypass capacitors are required for stability. Applications with noisy or high impedance power
supplies may require additional decoupling capacitors to reject power-supply noise. Connect bypass capacitors
close to the device pins.
POWER SUPPLY
The input circuitry of the INA21x can accurately measure beyond its power-supply voltage, V+. For example, the
V+ power supply can be 5 V, whereas the load power supply voltage can be as high as 26 V. However, the
output voltage range of the OUT terminal is limited by the voltages on the power-supply pin. Note also that the
INA21x can withstand the full –0.3 V to 26 V in the input pins, regardless of whether the device has power
applied or not.
SELECTING RS
The zero-drift offset performance of the INA21x offers several benefits. Most often, the primary advantage of the
low offset characteristic enables lower full-scale drops across the shunt. For example, non-zero-drift current
shunt monitors typically require a full-scale range of 100 mV.
The INA21x gives equivalent accuracy at a full-scale range on the order of 10 mV. This accuracy reduces shunt
dissipation by an order of magnitude with many additional benefits.
Alternatively, there are applications that must measure current over a wide dynamic range that can take
advantage of the low offset on the low end of the measurement. Most often, these applications can use the lower
gain INA213 or INA214 to accommodate larger shunt drops on the upper end of the scale. For instance, an
INA213 operating on a 3.3-V supply could easily handle a full-scale shunt drop of 60 mV, with only 60 µV of
offset.
UNIDIRECTIONAL OPERATION
Unidirectional operation allows the INA21x to measure currents through a resistive shunt in one direction. The
most frequent case of unidirectional operation sets the output at ground by connecting the REF pin to ground. In
unidirectional applications where the highest possible accuracy is desirable at very low inputs, bias the REF pin
to a convenient value above 50 mV to get the device output swing into the linear range for zero inputs.
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A less frequent case of unipolar output biasing is to bias the output by connecting the REF pin to the supply; in
this case, the quiescent output for zero input is at quiescent supply. This configuration would only respond to
negative currents (inverted voltage polarity at the device input).
BIDIRECTIONAL OPERATION
Bidirectional operation allows the INA21x to measure currents through a resistive shunt in two directions. In this
case, the output can be set anywhere within the limits of what the reference inputs allow (that is, between 0 V
and V+). Typically, it is set at half-scale for equal range in both directions. In some cases, however, it is set at a
voltage other than half-scale when the bidirectional current is nonsymmetrical.
The quiescent output voltage is set by applying voltage to the reference input. Under zero differential input
conditions the output assumes the same voltage as is applied to the reference input.
INPUT FILTERING
An obvious and straightforward location for filtering is at the output of the INA21x; however, this location negates
the advantage of the low output impedance of the internal buffer. The only other option for filtering is at the input
pins of the INA21x; this location requires consideration of the ±30% tolerance of the input impedance. Figure 24
shows a filter placed at the input pins.
RSHUNT << RFILTER
LOAD
VSUPPLY
RFILTER < 10 W
Reference
Voltage
RFILTER < 10 W
CFILTER
REF
INA21x
GND
R1
OUT
R3
Output
INf-3dB
2.7 V to 26 V
IN+
V+
R2
f-3dB =
1
2p (2 RFILTER) CFILTER
R4
CBYPASS
0.01 mF
to
0.1 mF
Figure 24. Input Filter
Using the lowest possible resistor values minimizes both the initial shift in gain and effects of tolerance. The
effect on initial gain is given by Equation 1:
GainError% = 100 - [100 ´ {R/(R + RFILT)}]
(1)
Where R is the value for R3 or R4 from Table 1 for the model in question.
Table 1.
PRODUCT
GAIN (V/V)
R3 AND R4
INA213
50
20 kΩ
INA214
100
10 kΩ
Using an INA212, for example, the total effect on gain error can be calculated by replacing the R with
1 kΩ – 30%, (or 700 Ω) or 1 kΩ + 30% (or 1.3 kΩ). The tolerance extremes of RFILT can also be inserted into the
equation. If a pair of 100-Ω 1% resistors are used on the inputs, the initial gain error is approximately 2%.
10
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SHUTTING DOWN
While the INA21x does not have a shutdown pin, its low power consumption allows powering from the output of a
logic gate or transistor switch that can turn on and turn off the INA21x power-supply quiescent current.
However, in current shunt monitoring applications. there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INA21x in shutdown mode shown in Figure 25.
RSHUNT
Supply
Reference
Voltage
REF
INA21x
GND
1 MW
R3
R2
R4
Shutdown
Control
Load
Output
OUT
IN-
IN+
V+
CBYPASS
PRODUCT
R3 and R4
INA213
INA213
20 kW
10 kW
NOTE: 1-MW paths from shunt inputs to reference and INA21x outputs.
Figure 25. Basic Circuit for Shutting Down INA21x With Grounded Reference
Note that there is typically slightly more than 1-MΩ impedance (from the combination of 1-MΩ feedback and
5-kΩ input resistors) from each input of the INA21x to the OUT pin and to the REF pin. The amount of current
flowing through these pins depends on the respective ultimate connection. For example, if the REF pin is
grounded, the calculation of the effect of the 1-MΩ impedance from the shunt to ground is straightforward.
However, if the reference or op amp is powered while the INA21x is shut down, the calculation is direct; instead
of assuming 1 MΩ to ground, however, assume 1 MΩ to the reference voltage. If the reference or op amp is also
shut down, some knowledge of the reference or op amp output impedance under shutdown conditions is
required. For instance, if the reference source behaves as an open circuit when it is unpowered, little or no
current flows through the 1-MΩ path.
Regarding the 1-MΩ path to the output pin, the output stage of a disabled INA21x does constitute a good path to
ground; consequently, this current is directly proportional to a shunt common-mode voltage impressed across a
1-MΩ resistor.
As a final note, when the device is powered up, there is an additional, nearly constant, and well-matched 25 µA
that flows in each of the inputs as long as the shunt common-mode voltage is 3 V or higher. Below 2-V
common-mode, the only current effects are the result of the 1-MΩ resistors.
REF INPUT IMPEDANCE EFFECTS
As with any difference amplifier, the INA21x common-mode rejection ratio is affected by any impedance present
at the REF input. This concern is not a problem when the REF pin is connected directly to most references or
power supplies. When using resistive dividers from the power supply or a reference voltage, the REF pin should
be buffered by an op amp.
In systems where the INA21x output can be sensed differentially, such as by a differential input analog-to-digital
converter (ADC) or by using two separate ADC inputs, the effects of external impedance on the REF input can
be cancelled. Figure 26 depicts a method of taking the output from the INA21x by using the REF pin as a
reference.
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RSHUNT
Supply
Load
ADC
2.7 V to 26 V
REF
INA21x
GND
R1
R3
R2
R4
Output
OUT
IN-
IN+
V+
CBYPASS
0.01 mF
to
0.1 mF
Figure 26. Sensing INA21x to Cancel Effects of Impedance on the REF Input
USING THE INA21x WITH COMMON-MODE TRANSIENTS ABOVE 26 V
With a small amount of additional circuitry, the INA21x can be used in circuits subject to transients higher than 26
V, such as automotive applications. Use only zener diode or zener-type transient absorbers (sometimes referred
to as Transzorbs) — any other type of transient absorber has an unacceptable time delay. Start by adding a pair
of resistors as shown in Figure 27 as a working impedance for the zener. It is desirable to keep these resistors
as small as possible, most often around 10 Ω. Larger values can be used with an effect on gain that is discussed
in the section on input filtering. Because this circuit is limiting only short-term transients, many applications are
satisfied with a 10-Ω resistor along with conventional zener diodes of the lowest power rating that can be found.
This combination uses the least amount of board space. These diodes can be found in packages as small as
SOT-523 or SOD-523.
RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
REF
INA21x
GND
1 MW
R3
1 MW
R4
V+
Shutdown
Control
Output
OUT
IN-
IN+
CBYPASS
Figure 27. INA21x Transient Protection Using Dual Zener Diodes
12
Submit Documentation Feedback
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): INA213-Q1 INA214-Q1
INA213-Q1
INA214-Q1
www.ti.com
SBOS475B – MARCH 2009 – REVISED JUNE 2010
If low-power zener diodes do not have sufficient transient absorption capability and a higher power transzorb
must be used, the most package-efficient solution then involves using a single transzorb and back-to-back
diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a
single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total
board area required by the INA21x with all protective components is less than that of an SO-8 package, and only
slightly greater than that of an MSOP-8 package.
RSHUNT
Supply
RPROTECT
10 W
Load
RPROTECT
10 W
Reference
Voltage
REF
INA21x
GND
1MW
R3
1 MW
R4
OUT
V+
Shutdown
Control
Output
IN-
IN+
CBYPASS
Figure 28. Transient Protection Using a Single Transzorb and Input Clamps
Copyright © 2009–2010, Texas Instruments Incorporated
Product Folder Link(s): INA213-Q1 INA214-Q1
Submit Documentation Feedback
13
PACKAGE OPTION ADDENDUM
www.ti.com
12-Sep-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
(3)
INA213AQDCKRQ1
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
INA214AQDCKRQ1
ACTIVE
SC70
DCK
6
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA214-Q1 :
• Catalog: INA214
NOTE: Qualified Version Definitions:
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
12-Sep-2011
• Catalog - TI's standard catalog product
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Sep-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
INA213AQDCKRQ1
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
INA214AQDCKRQ1
SC70
DCK
6
3000
180.0
8.4
2.25
2.4
1.22
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Sep-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA213AQDCKRQ1
SC70
DCK
6
3000
202.0
201.0
28.0
INA214AQDCKRQ1
SC70
DCK
6
3000
202.0
201.0
28.0
Pack Materials-Page 2
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