BF 720, BF 722 High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung ±0.2 6.5 ±0.1 3 1.65 2.3 2 ±0.2 3.5 ±0.3 7 0.7 1.5 W Plastic case Kunststoffgehäuse 4 1 NPN 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E SOT-223 Weight approx. – Gewicht ca. 0.04 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BF 720 BF 722 Collector-Emitter-voltage B open VCE0 300 V 250 V Collector-Base-voltage E open VCB0 300 V 250 V Emitter-Base-voltage C open VEB0 5V Power dissipation – Verlustleistung Ptot 1.5 W 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 100 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 200 V ICB0 – – 10 nA IE = 0, VCB = 200 V, Tj = 150/C ICB0 – – 10 :A IEB0 – – 50 nA – – 600 mV Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. – Kollektor-Sättigungsspg. 2) IC = 30 mA, IB = 5 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 10 01.11.2003 High Voltage Transistors BF 820, BF 822 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. hFE 50 – – fT 50 MHz – – – – 1.6 pF DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 20 V, IC = 25 mA Gain-Bandwidth Product – Transitfrequenz VCE = 20 V, IC = 25 mA, f = 100 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 30 V, IE = ie = 0, f = 1 MHz CCB0 Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft RthA 87 K/W 2) junction to soldering point – Sperrschicht zu Lötpad RthS 27 K/W Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren BF 721, BF 723 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 01.11.2003 1 2 11