BC846S ... BC848S NPN General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Version 2004-04-09 Dimensions / Maße in mm 2±0.1 5 2 2.1 Type Code 1 Plastic case Kunststoffgehäuse SOT-363 5 = B2 2 = B1 Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 3 2.4 6 = C1 1 = E1 310 mW 4 ±0.1 6 0.9±0.1 6.5 1.25±0.1 6.5 Power dissipation – Verlustleistung 4 = E2 3 = C2 Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BC846S BC847S BC848S Collector-Emitter-voltage B open VCE0 65 V 45 V 30 V Collector-Base-voltage E open VCB0 80 V 50 V 30 V Emitter-Base-voltage C open VEB0 6V 5V Power dissipation – Verlustleistung Ptot 310 mW 1) Collector current – Kollektorstrom (dc) IC 100 mA Peak Collector current – Kollektor-Spitzenstrom ICM 200 mA Peak Base current – Basis-Spitzenstrom IBM 200 mA Peak Emitter current – Emitter-Spitzenstrom - IEM 200 mA Junction temperature – Sperrschichttemperatur Tj 150/C Storage temperature – Lagerungstemperatur TS - 65…+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) 2 DC current gain – Kollektor-Basis-Stromverhältnis ) VCE = 5 V, IC = 10 :A VCE = 5 V, IC = 2 mA hFE hFE typ. 90 ... 270 110 ... 800 Small signal current gain Kleinsignal-Stromverstärkung hfe typ. 220 ... 600 Input impedance – Eingangs-Impedanz hie 1.6 ... 15 kS Output admittance – Ausgangs-Leitwert hoe 18 ...110 :S Reverse voltage transfer ratio Spannungsrückwirkung hre typ.1.5 ... 3 *10-4 h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 12 General Purpose Transistors BC846S ... BC848S Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. – – 90 mV 200 mV 250 mV 600 mV – – 700 mV 900 mV – – 580 mV – 660 mV – 700 mV 770 mV ICB0 ICB0 – – – – 15 nA 5 :A IEB0 – – 100 nA 1 Collector saturation volt. – Kollektor-Sättigungsspg. ) VCEsat VCEsat IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat VBEsat Base-Emitter voltage – Basis-Emitter-Spannung 1) VCE = 5 V, IC = 2 mA VCE = 5 V, IC = 10 mA VBEon VBEon Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 30 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 5 V Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz fT 100 MHz – Collector-Base Capacit. – Kollektor-Basis-Kapazität VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 3.5 pF 6 pF CEB0 – 9 pF – F – 2 dB 10 dB Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure – Rauschzahl VCE = 5 V, IC = 200 :A RG = 2 kS, f = 1 kHz, )f = 200 Hz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren 420 K/W 2) BC856S ... BC858S Pinning – Anschlußbelegung 6 5 4 T2 T1 1 1 2 2 3 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 13