DIOTEC BC846S

BC846S ... BC848S
NPN
General Purpose Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Version 2004-04-09
Dimensions / Maße in mm
2±0.1
5
2
2.1
Type
Code
1
Plastic case
Kunststoffgehäuse
SOT-363
5 = B2
2 = B1
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
3
2.4
6 = C1
1 = E1
310 mW
4
±0.1
6
0.9±0.1
6.5
1.25±0.1
6.5
Power dissipation – Verlustleistung
4 = E2
3 = C2
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BC846S
BC847S
BC848S
Collector-Emitter-voltage
B open
VCE0
65 V
45 V
30 V
Collector-Base-voltage
E open
VCB0
80 V
50 V
30 V
Emitter-Base-voltage
C open
VEB0
6V
5V
Power dissipation – Verlustleistung
Ptot
310 mW 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
- IEM
200 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
2
DC current gain – Kollektor-Basis-Stromverhältnis )
VCE = 5 V, IC = 10 :A
VCE = 5 V, IC = 2 mA
hFE
hFE
typ. 90 ... 270
110 ... 800
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220 ... 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 15 kS
Output admittance – Ausgangs-Leitwert
hoe
18 ...110 :S
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ.1.5 ... 3 *10-4
h-Parameters at VCE = 5V, IC = 2 mA, f = 1 kHz
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
12
General Purpose Transistors
BC846S ... BC848S
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
–
–
90 mV
200 mV
250 mV
600 mV
–
–
700 mV
900 mV
–
–
580 mV
–
660 mV
–
700 mV
770 mV
ICB0
ICB0
–
–
–
–
15 nA
5 :A
IEB0
–
–
100 nA
1
Collector saturation volt. – Kollektor-Sättigungsspg. )
VCEsat
VCEsat
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
VBEsat
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
VBEon
VBEon
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 30 V, Tj = 150/C
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
100 MHz
–
Collector-Base Capacit. – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
–
3.5 pF
6 pF
CEB0
–
9 pF
–
F
–
2 dB
10 dB
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A
RG = 2 kS, f = 1 kHz, )f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
420 K/W 2)
BC856S ... BC858S
Pinning – Anschlußbelegung
6
5
4
T2
T1
1
1
2
2
3
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
13