DCR1674SA DCR1674SA Phase Control Thyristor Replaces issue August 2002 version, FDS5647-1.0 FDS5647-2.1 January 2004 FEATURES KEY PARAMETERS ■ Double Side Cooling VDRM 4200V IT(AV) 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 200A/µs ■ High Surge Capability ■ High Mean Current ■ Fatigue Free APPLICATIONS *Higher dV/dt selections available ■ High Power Drives ■ High Voltage Power Supplies ■ DC Motor Control VOLTAGE RATINGS Type Number DCR1674SA42 DCR1674SA41 DCR1674SA40 DCR1674SA39 DCR1674SA38 Repetitive Peak Voltages VDRM VRRM V Conditions 4200 4100 4000 3900 3800 Tvj = 0˚ to 125˚C, IDRM = IRRM = 500mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Lower voltage grades available. ORDERING INFORMATION Outline type code: A. See Package Details for further information. Fig. 1 Package outline When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR1674SA42 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/8 www.dynexsemi.com DCR1674SA CURRENT RATINGS Tcase = 60˚C unless stated otherwise. Symbol Parameter Conditions Max. Units 3940 A Double Side Cooled Half wave resistive load IT(AV) Mean on-state current IT(RMS) RMS value - 6190 A Continuous (direct) on-state current - 5740 A 2590 A IT Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 4070 A Continuous (direct) on-state current - 3490 A Conditions Max. Units 3110 A IT Half wave resistive load CURRENT RATINGS Tcase = 80˚C unless stated otherwise. Symbol Parameter Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 4880 A Continuous (direct) on-state current - 4430 A 2010 A IT Half wave resistive load Single Side Cooled (Anode side) IT(AV) Mean on-state current IT(RMS) RMS value - 3150 A Continuous (direct) on-state current - 2630 A IT Half wave resistive load 2/8 www.dynexsemi.com DCR1674SA SURGE RATINGS Parameter Symbol ITSM I2t ITSM I2t Surge (non-repetitive) on-state current I2t for fusing Surge (non-repetitive) on-state current Conditions Max. Units 10ms half sine; Tcase = 125oC 53.0 kA VR = 50% VRRM - 1/4 sine 14.0 x 106 A2s 10ms half sine; Tcase = 125oC 67.0 kA VR = 0 22.4 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. dc - 0.0065 o Anode dc - 0.013 o Cathode dc - 0.013 o Double side - 0.001 o Single side - 0.002 o On-state (conducting) - 135 o Reverse (blocking) - 125 o Storage temperature range –55 125 o Clamping force 74.0 91.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 83.0kN with mounting compound C/W C/W C/W C Virtual junction temperature C C kN 3/8 www.dynexsemi.com DCR1674SA DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Typ. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125oC - 500 mA dV/dt Maximum linear rate of rise of off-state voltage To 67% VDRM Tj = 125oC, gate open circuit. - 1000 V/µs - 200 A/µs Rate of rise of on-state current From 67% VDRM to 5000A Gate source 2A tr = 0.5µs, Tj = 125oC Repetitive 50Hz dI/dt Non-repetitive - 400 A/µs IRRM/IDRM Threshold voltage At Tvj = 125oC - 0.95 V rT On-state slope resistance At Tvj = 125oC - 0.138 mΩ tgd Delay time VD = 67% VDRM, Gate source 20V, 10Ω tr = 0.5µs, Tj = 25oC - 2.5 µs tq Turn-off time VR = 200V, dIRR/dt = -5A/µs, VDR = 67% VDRM, dVDR/dt = 20V/µs linear - 900 µs IL Latching current Tj = 25oC, VD = 5V - 650 mA IH Holding current Tj = 25oC, Rg-k = ∞ - 220 mA Max. Units VT(TO) IT = 5000A, tp = 3ms, Tj = 125˚C, GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3.5 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 500 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 30 A PGM Peak gate power See table, gate characteristics curve 150 W PG(AV) Mean gate power 10 W 4/8 www.dynexsemi.com DCR1674SA CURVES 10000 10000 Measured under pulse conditions Tj = 125˚C 1. 8000 3. 4. Mean power dissipation - (W) Instantaneous on-state current, IT - (A) 8000 6000 4000 2000 0 0.5 2. 1. 6 phase 2. 3 phase 3. Halfwave 4. d.c. 6000 4000 2000 1.0 1.5 2.0 Instantaneous on-state voltage, VT - (V) Fig.2 Maximum (limit) on-state characteristics 2.5 0 0 2000 4000 6000 Mean on-state current, IT(AV) - (A) 8000 Fig.3 Dissipation curves VTM Equation:VTM = A + Bln (IT) + C.IT+D.√IT Where A = 0.6844942 B = –0.0108645 C = 7.203702 x 10–5 D = 0.01015201 these values are valid for Tj = 125˚C for IT 500A to 10000A 5/8 www.dynexsemi.com DCR1674SA 10000 100 Tj = 125˚C Table gives pulse power PGM in Watts Frequency Hz Pulse Width Gate trigger voltage, VGT - (V) Recovered charge, Qr - (µC) IT = 3000A 1000 50 150 150 150 150 20 µs 100 200 500 1ms 10ms 100 150 150 150 100 - 400 150 125 100 25 - VFGM 100W 50W 20W 10W 10 r pe p U 1 9 it m Li 9% Tj = 25˚C % VGD 100 1 10 Rate of decay of on-state current, dI/dt - (A/µs) 100 Lo w L er im it 1 IGD 0.1 0.001 IFGM 10 0.01 0.1 1.0 Gate trigger current, IGT - (A) Fig.4 Recovered charge Fig.5 Gate characteristics 20 200 Thermal impedance - (˚C/W) 0.01 Double side cooled 0.001 Double side 0.0065 0.0072 0.0073 0.0076 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.01 0.1 I2t 10 100 5 50 Effective thermal resistance Junction to case ˚C/W Conduction 0.0001 0.001 15 150 Ivt value for fusing - (A2s x 106) Anode side cooled Peak half sinewave on-state current - (kA) 0.1 1 Anode side 0.0130 0.0137 0.0138 0.0141 10 0 1 10 1 5 10 0 50 100 Time - (s) Fig.6 Transient thermal impedance - junction to case ms Cycles at 50Hz Duration Fig.7 Surge (non-repetitive) on-state current vs time (with 50% VRRM at Tcase = 125˚C) 6/8 www.dynexsemi.com DCR1674SA PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 2 holes Ø3.6 x 2.0 deep (In both electrodes) Cathode tab Cathode Ø148 nom Ø100 nom 35.0 ± 0.5 Ø1.5 Gate Ø100 nom Anode Ø138.5 Nominal weight: 2575g Clamping force: 83kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: A Fig.8 Package details 7/8 www.dynexsemi.com POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. www.dynexsemi.com