DS2101SY DS2101SY Rectifier Diode Replaces September 2001 version, DS4170-5.0 DS4170-5.1 December 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 1500V ■ High Surge Capability IF(AV) 7810A IFSM APPLICATIONS 79000A ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS2101SY15 1500 DS2101SY14 1400 DS2101SY13 1300 DS2101SY12 1200 DS2101SY11 1100 DS2101SY10 1000 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: F See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2101SY13 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2101SY CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 7810 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 12268 A Continuous (direct) forward current - 11091 A 5035 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 7909 A Continuous (direct) forward current - 6579 A Conditions Max. Units 6630 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC IF(RMS) RMS value Tcase = 100oC 10400 A Continuous (direct) forward current Tcase = 100oC 8600 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 4220 A IF(RMS) RMS value Tcase = 100oC 6630 A Continuous (direct) forward current Tcase = 100oC 5190 A IF 2/7 www.dynexsemi.com DS2101SY SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 190oC 72.0 kA VR = 50% VRRM - 1/4 sine 25.9 x 106 A2s 10ms half sine; Tcase =190oC 79.0 kA VR = 0 31.2 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. dc - 0.0095 o Anode dc - 0.019 o Cathode dc - 0.019 o C/W Double side - 0.002 o C/W Single side - 0.004 o C/W On-state (conducting) - 200 o Reverse (blocking) - 190 o Storage temperature range –55 190 o Clamping force 38.0 47.0 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 43.0kN with mounting compound C Virtual junction temperature C C kN 3/7 www.dynexsemi.com DS2101SY CHARACTERISTICS Symbol Conditions Parameter Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25oC - 0.95 V IRRM Peak reverse current At VRRM, Tcase = 190oC - 100 mA QS Total stored charge IF = 2000A, dIRR/dt = 3A/µs - 1600 µC IRM Peak recovery current Tcase =175˚C, VR = 100V - 90 A VTO Threshold voltage At Tvj = 190˚C - 0.67 V Slope resistance At Tvj = 190˚C - 0.038 mΩ rT CURVES 10000 16000 Measured under pulse conditions 8000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 12000 6000 Tj = 190˚C Tj = 25˚C 4000 8000 4000 2000 dc Half wave 3 phase 6 phase 0 0 0.5 1.0 Instantaneous forward voltage, VF -(V) 1.5 0 0 Fig.2 Maximum (limit) forward characteristics VFM Equation:VFM = A + Bln (IF) + C.IF+D.√IF 4000 8000 12000 Mean forward current, IF(AV) - (A) 16000 Fig.3 Dissipation curves Where A = 0.081707 B = 0.100349 C = 5.72 x 10–5 D = –0.00529 these values are valid for Tj = 125˚C for IF 500A to 16000A 4/7 www.dynexsemi.com DS2101SY 100000 IF 175 Conditions: Tj = 175˚C VR = 100V IF = 2000A QS I2t = Î2 x t 2 150 dIF/dt Stored charge, QS - (µC) 10000 125 100 30 75 25 50 I2t 20 25 1000 0.1 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 15 0 1 10 ms Fig.4 Total stored charge 1 2 3 5 10 20 I2t value - (A2s x 106) Peak half sine forward current - (kA) IRM 10 50 Cycles at 50Hz Duration Fig.5 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 190˚C) 0.1 Thermal impedance - (˚C/W) Anode side cooled 0.01 Double side cooled 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.0001 0.001 0.01 0.1 1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 10 Single side 0.019 0.020 0.0207 0.0234 100 Fig.7 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS2101SY PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (One in each electrode) Cathode 37.7 36.0 Ø112.5 max Ø73 nom Ø73 nom Anode Nominal weight: 1600g Clamping force: 50kN ±10% Package outine type code: Y Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS2101SY POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4170-5 Issue No. 5.1December 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. 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