DS1112SG DS1112SG Rectifier Diode Replaces January 2000 version, DS4181-4.0 DS4181-5.0 August 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 6000V ■ High Surge Capability IF(AV) 811A IFSM APPLICATIONS 10500A ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS1112SG60 6000 DS1112SG59 5900 DS1112SG58 5800 DS1112SG57 5700 DS1112SG56 5600 DS1112SG55 5500 Lower voltage grades available. Conditions VRSM = VRRM + 100V Outline type code: G See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS1112SG58 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS1112SG CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 811 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 1274 A Continuous (direct) forward current - 1172 A 534 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 839 A Continuous (direct) forward current - 727 A Conditions Max. Units IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 630 A IF(RMS) RMS value Tcase = 100oC 990 A Continuous (direct) forward current Tcase = 100oC 900 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current Half wave resistive load, Tcase = 100oC 410 A IF(RMS) RMS value Tcase = 100oC 644 A Continuous (direct) forward current Tcase = 100oC 550 A IF 2/7 www.dynexsemi.com DS1112SG SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 150oC 8.5 kA VR = 50% VRRM - 1/4 sine 360x 103 A2s 10ms half sine; Tcase = 150oC 10.5 kA VR = 0 565 x 103 A2s I2t for fusing THERMAL AND MECHANICAL DATA Min. Max. Units dc - 0.032 o Anode dc - 0.064 o Cathode dc - 0.064 o C/W Double side - 0.008 o C/W Single side - 0.016 o C/W On-state (conducting) - 160 o Reverse (blocking) - 150 o Storage temperature range –55 175 o Clamping force 11.5 13.5 Parameter Symbol Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 12.0kN with mounting compound C Virtual junction temperature C C kN 3/7 www.dynexsemi.com DS1112SG CHARACTERISTICS Conditions Parameter Symbol Min. Max. Units VFM Forward voltage At 1800A peak, Tcase = 25oC - 2.1 V IRM Peak reverse current At VRRM, Tcase = 150oC - 75 mA QS Total stored charge - 3000 µC Irr Reverse recovery current - 90 A VTO rT IF = 1000A, dIRR/dt = 3A/µs Tcase = 150˚C, VR = 100V Threshold voltage At Tvj = 150˚C - 0.9 V Slope resistance At Tvj = 150˚C - 0.93 mΩ CURVES 2500 2500 Measured under pulse conditions dc 2000 2000 3 phase Mean power dissipation - (W) Instantaneous forward current, IF - (A) Half wave 1500 Tj = 25˚C Tj = 150˚C 1000 1500 1000 500 500 0 0.5 1.5 2.5 Instantaneous forward voltage, VF - (V) 3.5 0 0 VFM = A + Bln (IF) + C.IF+D.√IF 1000 1500 2000 Mean forward current, IF(AV) - (A) Fig.2 Maximum (limit) forward characteristics VFM Equation:- 500 Fig.3 Dissipation curves Where A = 1.249986 B = –0.17646 C = 0.000524 D = 0.041024 these values are valid for Tj = 125˚C for IF 500A to 2500A 4/7 www.dynexsemi.com DS1112SG 400 35 Conditions: Tj = 150˚C VR = 100V IF = 1000A I2t = Î2 x t 2 1000 IF QS 25 350 300 I2t 20 250 15 200 10 150 5 100 I2t value - (A2s x 103) Peak half sine forward current - (kA) 30 Stored charge, QS - (µC) 10000 dIF/dt 100 0.1 IRM 1.0 10 Rate of decay of forward current, dIF/dt - (A/µs) 100 0 1 10 ms Fig.4 Total stored charge 1 2 3 5 10 20 50 50 Cycles at 50Hz Duration Fig.5 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 125˚C) 0.1 Thermal Impedance - junction to case, Rth(j–c) - (˚C/W) Anode side cooled Double side cooled 0.01 0.001 0.001 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0.01 0.1 Time - (s) Effective thermal resistance Junction to case ˚C/W Double side 0.032 0.034 0.044 0.057 Single side 0.064 0.066 0.076 0.089 1.0 10 Fig.6 Maximum (limit) transient thermal impedance junction to case 5/7 www.dynexsemi.com DS1112SG PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Hole Ø3.6 x 2.0 deep (in both electrodes) Cathode Ø58.5 max 27.0 25.4 Ø34 nom Ø34 nom Anode Nominal weight: 250g Clamping force: 12kN ±10% Package outine type code: G Note: 1. Package maybe supplied with pins and/or tags. 6/7 www.dynexsemi.com DS1112SG POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4181-5 Issue No. 5.0 August 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. 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