GP400DDM12 GP400DDM12 Dual Switch IGBT Module Advance Information DS5503-1.0 October 2001 FEATURES ■ High Thermal Cycling Capability ■ 400A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 400A 800A APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters 1(E1) 5(E1) 6(G1) 11(G2) 7(C1) 10(E2) The Powerline range of high power modules includes half bridge, dual, chopper and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP400DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 2(C2) 12(C2) 3(C1) 4(E2) Fig. 1 Dual switch circuit diagram 5 6 3 1 4 2 7 8 ORDERING INFORMATION Order As: 9 12 11 GP400DDM12 Note: When ordering, please use the whole part number. 10 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/9 GP400DDM12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 80˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 105˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 3470 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 36 ˚C/kW - 80 ˚C/kW - 8 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm IC THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 29 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 20 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±2 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.7 3.5 V VGE = 15V, IC = 800A, , Tcase = 125˚C - 3.2 4 V Parameter Symbol ICES IGES Collector cut-off current Test Conditions IF Diode forward current DC, Tcase = 50˚C - - 400 A IFM Diode maximum forward current tp = 1ms - - 800 A VF Diode forward voltage IF = 800A - 2.2 2.5 V IF = 800A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF - 20 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/9 GP400DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 800 - ns Fall time VGE = ±15V - 110 - ns EOFF Turn-off energy loss VCE = 600V - 65 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 700 - ns L ~ 100nH - 170 - ns - 45 - mJ - 30 - µC Min. Typ. Max. Units IC = 400A - 1000 - ns Fall time VGE = ±15V - 150 - ns EOFF Turn-off energy loss VCE = 600V - 80 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 4.7Ω - 800 - ns L ~ 100nH - 300 - ns - 75 - mJ - 65 - µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2000A/µs Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 400A, VR = 50% VCES, dIF/dt = 2000A/µs 49 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDM12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 800 700 800 Common emitter Tcase = 25˚C 700 600 Collector current, IC - (A) Collector current, IC - (A) 600 500 400 300 500 400 300 200 200 100 100 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig. 3 Typical output characteristics Conditions: Vce = 900V 140 IC = 400A Tc = 125°C Switching energy, Esw - (mJ) Switching energy - (mJ) 5.0 160 Conditions: V = 600V 80 T ce= 125°C c Rg = 4.7Ω 70 60 50 40 30 20 Eoff Eon 10 200 300 Collector current, IC - (A) 400 Fig. 5 Typical switching energy vs collector current 120 100 80 60 40 20 0 100 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) Fig. 4 Typical output characteristics 90 0 Common emitter Tcase = 125˚C 500 0 0 Eoff Eon 4 8 12 Gate Resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 16 5/9 GP400DDM12 800 1000 700 900 800 Tj = 25˚C 700 Collector current, IC - (A) Forward current, IF - (A) 600 Tj = 125˚C 500 400 300 600 500 400 300 200 200 100 100 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 0 0 3.5 Fig.7 Diode typical forward characteristics 1000 600 400 800 Collector-emitter voltage, Vce - (V) IC max. (single pulse) IC tp = 50µs tp = 100µs C .D ax m 100 s) u uo tin on (c 10 tp = 1ms 1 Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 1000 Collector current, IC - (A) 200 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.9 Forward bias safe operating area 10000 Diode Transistor 10 1 0.1 1 1200 Fig.8 Reverse bias safe operating area 10000 69 Tcase = 125˚C Vge = ±15V Rg = 4.7Ω * *Recommended minimum value 1 10 100 Pulse width, tp - (ms) 1000 10000 Fig.10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDM12 700 DC collector current, IC - (A) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.11 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 7/9 GP400DDM12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 13 15 15 5 1 4 2 11.85 3 57 24 65 6 16 7 9 13 26 12 43.3 57 65 18 8 11 10 14 11.5 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Main Terminal screw plastic hole depth (M8) = 16.8 ± 0.3 Auxiliary and Gate pin plastic hole depth (M4) = 9± 0.3 Copper terminal thickness, Main Terminal pins = 1.5 ± 0.1 Copper terminal thickness, Auxiliary and Gate pin = 0.9 ± 0.1 Nominal weight: 1050g Module outline type code: D 89 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDM12 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5503-1 Issue No. 1.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/9