GP800DDM12 GP800DDM12 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces May 2000 version, DS5291-1.3 FEATURES ■ High Thermal Cycling Capability ■ 800A Per Switch ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5291-2.0 October 2000 KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7V 800A 1600A APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives ■ Resonant Converters 11(G2) 12(C2) 10(E2) 3(C1) 4(E2) 2(C2) 1(E1) 5(E1) 7(C1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP800DDM12 is a dual switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Fig. 1 Dual switch circuit diagram 5 6 3 1 4 2 7 8 ORDERING INFORMATION Order As: 9 12 11 GP800DDM12 Note: When ordering, please use the whole part number. 10 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/11 GP800DDM12 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions Parameter VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 80˚C 800 A IC(PK) Peak collector current 1ms, Tcase = 105˚C 1600 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 6490 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 18 ˚C/kW - 40 ˚C/kW - 8 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm THERMAL AND MECHANICAL RATINGS Rth(j-c) Test Conditions Parameter Symbol Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/11 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 50 mA Gate leakage current VGE = ±20V, VCE = 0V - - ±4 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4 - 7.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 800A - 2.7 3.5 V VGE = 15V, IC = 800A, , Tcase = 125˚C - 3.2 4 V Symbol ICES IGES Test Conditions Parameter Collector cut-off current IF Diode forward current DC, Tcase = 50˚C - - 800 A IFM Diode maximum forward current tp = 1ms - - 1600 A VF Diode forward voltage IF = 800A - 2.2 2.4 V IF = 800A, Tcase = 125˚C - 2.3 2.5 V VCE = 25V, VGE = 0V, f = 1MHz - 90 - nF - 20 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/11 GP800DDM12 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 800A - 1100 1300 ns Fall time VGE = ±15V - 150 200 ns EOFF Turn-off energy loss VCE = 600V - 130 170 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 800 900 ns L ~ 100nH - 320 400 ns - 90 130 mJ - 150 200 µC Min. Typ. Max. Units IC = 800A - 1300 1500 ns Fall time VGE = ±15V - 200 250 ns EOFF Turn-off energy loss VCE = 600V - 170 250 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 3.3Ω - 950 1200 ns L ~ 100nH - 350 450 ns - 150 200 mJ - 200 260 µC Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 800A, VR = 50% VCES, dIF/dt = 2000A/µs-1 Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Test Conditions IF = 800A, VR = 50% VCES, dIF/dt = 2000A/µs-1 4/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V Vge = 20/15/12/10V 1600 1400 1600 Common emitter Tcase = 25˚C 1400 1200 Collector current, IC - (A) Collector current, IC - (A) 1200 1000 800 600 1000 800 600 400 400 200 200 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 0 0 5.0 Fig. 3 Typical output characteristics 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 Fig. 4 Typical output characteristics 220 160 Conditions: Tcase = 25˚C, VCE = 600V, VGE = ±15V 140 Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V 200 A 180 120 A 160 Turn-on energy, Eon - (mJ) Turn-on energy, Eon - (mJ) Common emitter Tcase = 125˚C B B 140 100 C 120 80 C 100 60 40 80 60 40 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 0 0 0 100 200 300 400 500 600 Collector current, IC - (A) 700 Fig. 5 Typical turn-on energy vs collector current 800 0 100 200 300 400 500 600 Collector current, IC - (A) 800 Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 700 5/11 GP800DDM12 180 250 Conditions: Tcase = 25˚C, VCE = 600V, VGE = ±15V 160 A 200 140 B Turn-off energy, Eoff - (mJ) Turn-off energy, Eoff - (mJ) Conditions: Tcase = 125˚C, VCE = 600V, VGE = ±15V 120 C 100 80 60 40 0 100 200 Conditions: VCE = 600V, VGE = 15V, Rg = 3.3Ω 100 300 400 500 600 Collector current, IC - (A) 700 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 0 800 0 100 200 300 400 500 600 Collector current, IC - (A) 700 800 Fig.8 Typical turn-off energy vs collector current 2000 Conditions: Tcase = 125˚C, VCE = 600V VGE = 15V Rg = 3.3Ω 1800 Tcase = 125˚C td(off) 1600 50 tf 1400 Switching times, ts - (ns) Diode turn-off energy, Eoff(Diode) - (mJ) 60 C 50 Fig.7 Typical turn-off energy vs collector current 70 B 150 A : Rg = 6.8Ω B : Rg = 4.7Ω C : Rg = 3.3Ω 20 0 A 1200 40 1000 Tcase = 25˚C 30 20 td(on) 800 600 400 10 200 tr 0 0 0 200 400 600 Collector current, IC (A) 800 Fig.9 Typical diode reverse recovery charge vs collector current 6/11 0 100 200 300 400 500 600 Collector currrent, IC - (A) 700 800 Fig.10 Typical switching characteristics Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 1600 2000 1400 1800 1600 Tj = 25˚C Collector current, IC - (A) Forward current, IF - (A) 1200 Tj = 125˚C 1000 1400 1200 800 1000 600 800 600 400 400 200 200 0 0 0.5 1 1.5 2 2.5 Forward voltage, VF - (V) 3 0 0 3.5 Fig.11 Diode typical forward characteristics 200 1000 600 400 800 Collector-emitter voltage, Vce - (V) 1200 Fig.12 Reverse bias safe operating area 10000 1000 IC .D ax m C 100 ) us uo tin on (c tp = 50µs tp = 100µs tp = 1ms 10 Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 IC max. (single pulse) Collector current, IC - (A) Tcase = 125˚C Vge = ±15V Rg = 3.3Ω* *Recommended minimum value Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig.13 Forward bias safe operating area 10000 1 10 100 Pulse width, tp - (ms) 10000 Fig.14 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 7/11 GP800DDM12 2000 PWM Sine Wave. Power Factor = 0.9, Modulation Index = 1 1800 1400 1200 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 1600 1000 1400 1200 1000 800 600 800 600 400 400 Conditions: 200 Tj = 125°C, Tc = 75°C, Rg = 3.3Ω, VCC = 600V 0 1 10 fmax - (kHz) Fig.15 3-Phase inverter operating frequency 8/11 200 50 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.16 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 13 15 15 5 2 57 4 11.85 1 43.3 57 65 8 9 26 12 13 3 7 18 16 24 65 6 11 10 14 11.5 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Nominal weight: 1000g Module outline type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/11 GP800DDM12 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors AN4506 Gate drive considerations to maximise IGBT efficiency AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving Dynex Semincoductor IGBT modules with Concept gate drivers AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 10/11 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP800DDM12 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. Unit 7 - 58 Antares Drive, Nepean, Ontario, Canada K2E 7W6. Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 02. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2000 Publication No. DS5291-2 Issue No. 2.0 October 2000 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11/11