GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 1600A APPLICATIONS ■ High Power Inverters ■ Motor Controllers ■ Induction Heating ■ Resonant Converters 11(G2) 12(C2) 10(E2) 3(C1) 4(E2) 2(C2) 1(E1) 5(E1) 7(C1) 6(G1) The Powerline range of high power modules includes dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP400DDS18 is a dual switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. Fig. 1 Dual switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 5 6 ORDERING INFORMATION Order As: 3 1 4 2 7 8 GP400DDS18 9 Note: When ordering, please use the whole part number. 12 11 10 Outline type code: D (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 GP400DDS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES Collector-emitter voltage VGES Gate-emitter voltage IC Test Conditions Parameter VGE = 0V - Max. Units 1800 V ±20 V Continuous collector current Tcase = 65˚C 400 A IC(PK) Peak collector current 1ms, Tcase = 105˚C 800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 3000 W Visol Isolation voltage Commoned terminals to base plate. AC RMS, 1 min, 50Hz 4000 V Min. Max. Units - 42 ˚C/kW - 80 ˚C/kW - 8 ˚C/kW Transistor - 150 ˚C Diode - 125 ˚C –40 125 ˚C Mounting - M6 - 5 Nm Electrical connections - M4 - 2 Nm Electrical connections - M8 - 10 Nm THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Test Conditions Parameter Thermal resistance - transistor (per arm) Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Tstg - 2/10 Junction temperature Storage temperature range Screw torque - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 1 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 12 mA Gate leakage current VGE = ±20V, VCE = 0V - - 2 µA VGE(TH) Gate threshold voltage IC = 20mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 400A - 3.5 4 V VGE = 15V, IC = 400A, , Tcase = 125˚C - 4.3 5 V ICES IGES Test Conditions Parameter Symbol Collector cut-off current IF Diode forward current DC - 400 - A IFM Diode maximum forward current tp = 1ms - 800 - A VF Diode forward voltage IF = 400A - 2.2 2.5 V IF = 400A, Tcase = 125˚C - 2.3 2.6 V VCE = 25V, VGE = 0V, f = 1MHz - 45 - nF - 20 - nH Cies Input capacitance LM Module inductance - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 GP400DDS18 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 400A - 900 1100 ns Fall time VGE = ±15V - 280 350 ns EOFF Turn-off energy loss VCE = 900V - 80 100 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 500 650 ns L ~ 100nH - 200 400 ns - 140 180 mJ IF = 400A, VR = 50% VCES, - 80 100 µC dIF/dt = 3000A/µs - 250 - A - 70 - mJ Min. Typ. Max. Units IC = 400A - 1010 1200 ns Fall time VGE = ±15V - 390 500 ns EOFF Turn-off energy loss VCE = 900V - 100 150 mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 2.2Ω - 660 800 ns L ~ 100nH - 310 400 ns - 200 270 mJ IF = 400A, VR = 50% VCES, - 110 150 µC dIF/dt = 2500A/µs - 300 - A - 70 - mJ Symbol td(off) tf tr Parameter Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Test Conditions Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC 4/10 Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 TYPICAL CHARACTERISTICS Vge = 20/15/12V Vge = 20/15/12V 800 800 700 Common emitter Tcase = 25˚C 700 600 Vge = 10V Collector current, IC - (A) Collector current, Ic - (A) 600 500 400 300 400 300 200 100 100 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 0 0 7.0 Fig. 3 Typical output characteristics 280 260 9.0 10.0 Tcase = 125˚C VGE = ±15V VCE = 900V 240 Turn-on energy, EON - (mJ) Turn-on energy, EON - (mJ) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 Collector-emitter voltage, Vce - (V) 300 Tcase = 25˚C VGE = ±15V VCE = 900V 320 280 240 A 200 B 160 C 120 A 220 200 B 180 C 160 140 120 100 80 60 80 A: Rg = 4.7Ω B: Rg = 3.3Ω C: Rg = 2.2Ω 40 0 0 1.0 Fig. 4 Typical output characteristics 400 360 Vge = 10V 500 200 0 0 Common emitter Tcase = 125˚C 50 100 150 200 250 300 Collector current, IC - (A) 350 Fig. 5 Typical turn-off energy vs collector current A: Rg = 4.7Ω B: Rg = 3.3Ω C: Rg = 2.2Ω 40 20 400 0 0 50 100 150 200 250 300 Collector current, IC - (A) 400 Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 350 5/10 GP400DDS18 150 125 A Turn-off energy, EOFF - (mJ) Turn-off energy, EOFF - (mJ) 125 150 Tcase = 25˚C VGE = ±15V VCE = 900V 100 B 75 C 50 25 0 0 100 150 250 300 200 Collector current, IC - (A) 350 C 75 50 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 2.2Ω 100 50 1400 VGE = ±15V VCE = 900V Rg = 2.2Ω 1200 Tcase = 125˚C Switching times, ts - (ns) Tcase = 25˚C 30 20 350 400 Tcase = 125˚C VGE = ±15V VCE = 900V Rg = 2.2Ω td(off) 1000 40 200 150 250 300 Collector current, IC - (A) Fig. 8 Typical turn-off energy vs collector current 60 Diode turn-off energy, Eoff(diode) - (mJ) B 100 0 0 400 Fig. 7 Typical turn-off energy vs collector current 50 A 25 A: Rg = 13Ω B: Rg = 6.8Ω C: Rg = 2.2Ω 50 Tcase = 125˚C VGE = ±15V VCE = 900V 800 td(on) 600 tf 400 tr 10 200 0 0 50 100 150 200 250 300 350 400 Collector current, IC - (A) Fig. 9 Typical diode turn-off energy vs collector current 6/10 0 0 50 100 150 200 250 300 Collector current, IC - (A) 350 400 Fig. 10 Typical switching times Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 1000 800 900 700 Tj = 25˚C 800 700 Collector current, IC - (A) Foward current, IF - (A) 600 500 Tj = 125˚C 400 300 600 500 400 300 200 200 100 100 Tcase = 125˚C Vge = ±15V Rg(min) = 4.3Ω Rg(min) : Minimum recommended value 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 0 0 3.5 Fig. 12 Reverse bias safe operating area Fig. 11 Diode typical forward characteristics 10000 IC max. (single pulse) IC . ax m 100 C D (c 50µs uo tin on 100µs ) us 10 tp = 1ms Transient thermal impedance, Zth (j-c) - (°C/kW ) 100 1000 Collector current, IC - (A) 2000 1200 400 800 1600 Collector-emitter voltage, Vce - (V) Diode Transistor 10 1 0.1 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) Fig. 13 Forward bias safe operating area 10000 1 10 100 Pulse width, tp - (ms) 10000 Fig.14 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1000 7/10 GP400DDS18 700 900 PWM Sine Wave Power Factor = 0.9, Modulation Index =1 600 700 DC collector current, IC - (A) Inverter phase current, IC(PK) - (A) 800 600 500 400 300 500 400 300 200 200 Conditions: Tj = 125˚C, Tcase = 75˚C Rg = 4.3Ω, VCC = 900V 100 100 0 1 10 fmax - (kHz) Fig.15 3-Phase inverter operating frequency 8/10 20 0 0 20 40 60 80 100 120 Case temperature, Tcase - (˚C) 140 160 Fig.16 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 62 62 13 15 15 5 2 57 4 11.85 1 43.3 57 65 8 9 26 12 13 3 7 18 16 24 65 6 11 10 14 11.5 20 35 6x Ø7 4x M8 38 28 31.5 6x M4 5 140 Nominal weight: 1600g Module outline type code: D Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 GP400DDS18 ASSOCIATED PUBLICATIONS Title Application Note Number Electrostatic handling precautions AN4502 An introduction to IGBTs AN4503 IGBT ratings and characteristics AN4504 Heatsink requirements for IGBT modules AN4505 Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency AN4506 AN4507 Parallel operation of IGBTs – punch through vs non-punch through characteristics AN4508 Guidance notes for formulating technical enquiries AN4869 Principle of rating parallel connected IGBT modules AN5000 Short circuit withstand capability in IGBTs AN5167 Driving high power IGBTs with Concept gate drivers AN5190 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP400DDS18 http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5359-2 Issue No. 2.0 January 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 11/10