ELPIDA EDD5108ABTA

PRELIMINARY DATA SHEET
512M bits DDR SDRAM
EDD5104ABTA (128M words × 4 bits)
EDD5108ABTA (64M words × 8 bits)
Description
Pin Configurations
The EDD5104AB is a 512M bits Double Data Rate
(DDR) SDRAM organized as 33,554,432 words × 4 bits
× 4 banks. The EDD5108AB is a 512M bits DDR
SDRAM organized as 16,777,216 words × 8 bits × 4
banks. Read and write operations are performed at the
cross points of the CK and the /CK. This high-speed
data transfer is realized by the 2 bits prefetch-pipelined
architecture. Data strobe (DQS) both for read and
write are available for high speed and reliable data bus
design. By setting extended mode resistor, the on-chip
Delay Locked Loop (DLL) can be set enable or disable.
They are packaged in standard 66-pin plastic TSOP
(II)10.16mm(400).
/xxx indicates active low signal.
Features
• 2.5 V power supply: VDDQ = 2.5V ± 0.2V
: VDD = 2.5V ± 0.2V
• Data Rate: 333Mbps/266Mbps (max.)
• Double Data Rate architecture; two data transfers per
clock cycle
• Bi-directional, data strobe (DQS) is transmitted
/received with data, to be used in capturing data at
the receiver
• Data inputs, outputs, and DM are synchronized with
DQS
• 4 internal banks for concurrent operation
• DQS is edge aligned with data for READs; center
aligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK
transitions
• Commands entered on each positive CK edge; data
and data mask referenced to both edges of DQS
• Data mask (DM) for write data
• Auto precharge option for each burst access
• 2.5 V (SSTL_2 compatible) I/O
• Programmable burst length (BL): 2, 4, 8
• Programmable /CAS latency (CL): 2, 2.5
• Refresh cycles: 8192 refresh cycles/64ms
 7.8µs maximum average periodic refresh interval
• 2 variations of refresh
 Auto refresh
 Self refresh
66-pin TSOP(II)10.16mm(400)
VDD
VDD
NC
DQ0
VDDQ VDDQ
NC
NC
DQ0
DQ1
VSSQ VSSQ
NC
NC
NC
DQ2
VDDQ VDDQ
NC
NC
DQ1
DQ3
VSSQ VSSQ
NC
NC
NC
NC
VDDQ VDDQ
NC
NC
NC
NC
VDD
VDD
NC
NC
NC
NC
/WE
/WE
/CAS
/CAS
/RAS
/RAS
/CS
/CS
NC
NC
BA0
BA0
BA1
BA1
A10(AP) A10(AP)
A0
A0
A1
A1
A2
A2
A3
A3
VDD
VDD
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
A12
A11
A9
A8
A7
A6
A5
A4
VSS
X8
X4
(Top view)
A0 to A12
BA0, BA1
DQ0 to DQ7
DQS
/CS
/RAS
/CAS
/WE
DM
CK
/CK
CKE
VREF
VDD
VSS
VDDQ
VSSQ
NC
Address input
Bank select address
Data-input/output
Input and output data strobe
Chip select
Row address strobe command
Column address strobe command
Write enable
Input mask
Clock input
Differential clock input
Clock enable
Input reference voltage
Power for internal circuit
Ground for internal circuit
Power for DQ circuit
Ground for DQ circuit
No connection
Document No. E0237E30 (Ver. 3.0)
Date Published August 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2002
EDD5104ABTA, EDD5108ABTA
Ordering Information
Part number
EDD5104ABTA-6B
EDD5104ABTA-7A
EDD5104ABTA-7B
EDD5108ABTA-6B
EDD5108ABTA-7A
EDD5108ABTA-7B
Mask
version
B
Organization
(words × bits)
128M × 4
Internal
banks
4
64M × 8
Data Rate
Mbps (max.)
JEDEC speed bin
(CL-tRCD-tRP)
333
266
266
333
266
266
DDR333B (2.5-3-3)
DDR266A (2-3-3)
DDR266B (2.5-3-3)
DDR333B (2.5-3-3)
DDR266A (2-3-3)
DDR266B (2.5-3-3)
Package
66-pin Plastic
TSOP (II)
10.16mm(400)
Part Number
E D D 51 04 A B TA - 6B
Elpida Memory
Type
D: Monolithic Device
Product Code
D: DDR SDRAM
Density / Bank
51: 512M / 4 banks
Bit Organization
4: x4
8: x8
Voltage, Interface
A: 2.5V, SSTL_2
Die Rev.
Package
TA: TSOP (II)
Speed
6B: DDR333B (2.5-3-3)
7A: DDR266A (2-3-3)
7B: DDR266B (2.5-3-3)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
2
EDD5104ABTA, EDD5108ABTA
CONTENTS
Description.....................................................................................................................................................1
Features.........................................................................................................................................................1
Pin Configurations .........................................................................................................................................1
Ordering Information......................................................................................................................................2
Part Number ..................................................................................................................................................2
Electrical Specifications.................................................................................................................................4
Block Diagram .............................................................................................................................................10
Pin Function.................................................................................................................................................11
Command Operation ...................................................................................................................................13
Simplified State Diagram .............................................................................................................................21
Operation of the DDR SDRAM ....................................................................................................................22
Timing Waveforms.......................................................................................................................................41
Package Drawing ........................................................................................................................................47
Recommended Soldering Conditions ..........................................................................................................48
Preliminary Data Sheet E0237E30 (Ver. 3.0)
3
EDD5104ABTA, EDD5108ABTA
Electrical Specifications
• All voltages are referenced to VSS (GND).
• After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before
proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VT
–1.0 to +3.6
V
Supply voltage relative to VSS
VDD
–1.0 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Note
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended Operating Conditions (TA = 0 to 70°°C)
Parameter
Symbol
Supply voltage
VDD,
VDDQ
VSS,
VSSQ
Min
Typ
Max
Unit
Notes
2.3
2.5
2.7
V
1
0
0
0
V
Input reference voltage
VREF
0.49 × VDDQ
0.50 × VDDQ
0.51 × VDDQ
V
Termination voltage
VTT
VREF – 0.04
VREF
VREF + 0.04
V
Input high voltage
VIH (DC)
VREF + 0.15
—
VDDQ + 0.3
V
2
Input low voltage
VIL (DC)
–0.3
—
VREF – 0.15
V
3
VIN (DC)
–0.3
—
VDDQ + 0.3
V
4
VIX (DC)
0.5 × VDDQ − 0.2V
0.5 × VDDQ
0.5 × VDDQ + 0.2V V
VID (DC)
0.36
—
VDDQ + 0.6
Input voltage level,
CK and /CK inputs
Input differential cross point
voltage, CK and /CK inputs
Input differential voltage,
CK and /CK inputs
Notes: 1.
2.
3.
4.
5.
6.
V
5, 6
VDDQ must be lower than or equal to VDD.
VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns.
VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns.
VIN (DC) specifies the allowable dc execution of each differential input.
VID (DC) specifies the input differential voltage required for switching.
VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V
if measurement.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
4
EDD5104ABTA, EDD5108ABTA
DC Characteristics 1 (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
max.
Grade
×4
×8
Unit
Operating current (ACT-PRE) IDD0
-6B
-7A, -7B
150
135
150
135
mA
Operating current
(ACT-READ-PRE)
IDD1
-6B
-7A, -7B
170
155
180
160
mA
Idle power down standby
current
IDD2P
3
3
mA
Floating idle standby current
IDD2F
40
35
40
35
mA
Quiet idle standby current
IDD2Q
25
25
mA
Active power down standby
current
IDD3P
20
20
mA
CKE ≤ VIL
Active standby current
IDD3N
70
60
70
60
mA
CKE ≥ VIH, /CS ≥ VIH
3, 5, 6
tRAS = tRAS (max.)
Operating current
(Burst read operation)
IDD4R
200
170
210
180
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
1, 2, 5,
6
Operating current
(Burst write operation)
IDD4W
200
170
210
180
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
1, 2, 5,
6
Auto Refresh current
IDD5
290
270
290
270
mA
Self refresh current
IDD6
4
4
mA
Operating current
(4 banks interleaving)
IDD7A
420
360
430
370
mA
Parameter
Symbol
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
Test condition
CKE ≥ VIH,
tRC = tRC (min.)
CKE ≥ VIH, BL = 4,
CL = 2.5,
tRC = tRC (min.)
CKE ≤ VIL
Notes
1, 2, 9
1, 2, 5
4
CKE ≥ VIH, /CS ≥ VIH,
4, 5
DQ, DQS, DM = VREF
CKE ≥ VIH, /CS ≥ VIH,
4, 10
DQ, DQS, DM = VREF
3
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
BL = 4
5, 6, 7
Notes: 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one clock cycle.
6. DQ, DM and DQS transition twice per one clock cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at ≥ VIH or ≤ VIL.
DC Characteristics 2 (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
Input leakage current
IL
–2
2
µA
VDD ≥ VIN ≥ VSS
Output leakage current
IOZ
–5
5
µA
VDDQ ≥ VOUT ≥ VSS
Output high current
IOH
–15.2
—
mA
VOUT = 1.95V
Output low current
IOL
15.2
—
mA
VOUT = 0.35V
Preliminary Data Sheet E0237E30 (Ver. 3.0)
5
Notes
EDD5104ABTA, EDD5108ABTA
Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Symbol
Pins
min.
Typ
max.
Unit
Notes
Input capacitance
CI1
CK, /CK
2.0
—
3.0
pF
1
CI2
All other input pins
2.0
—
3.0
pF
1
Delta input capacitance
Cdi1
CK, /CK
—
—
0.25
pF
1
Cdi2
All other input-only pins
—
—
0.5
pF
1
Data input/output capacitance
CI/O
DQ, DM, DQS
4.0
—
5
pF
1, 2,
Delta input/output capacitance
Cdio
DQ, DM, DQS
—
—
0.5
pF
1
f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V,
Notes: 1. These parameters are measured on conditions:
TA = +25°C.
2. DOUT circuits are disabled.
AC Characteristics (TA = 0 to +70°°C, VDD, VDDQ = 2.5V ± 0.2V, VSS, VSSQ = 0V)
-6B
-7A
-7B
Parameter
Symbol min.
max.
min.
max
min.
max.
Unit
Notes
Clock cycle time
(CL = 2)
tCK
7.5
12
7.5
12
10
12
ns
10
(CL = 2.5)
tCK
6
12
7.5
12
7.5
12
ns
CK high-level width
tCH
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min
(tCH, tCL)
—
min
(tCH, tCL)
—
min
(tCH, tCL)
—
tCK
tAC
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
2, 11
tDQSC
–0.6
K
0.6
–0.75
0.75
–0.75
0.75
ns
2, 11
tDQSQ —
0.45
—
0.5
—
0.5
ns
3
DQ output access time from
CK, /CK
DQS output access time from CK,
/CK
DQS to DQ skew
DQ/DQS output hold time from DQS tQH
tHP – tQHS —
tHP – tQHS —
tHP – tQHS —
ns
Data hold skew factor
tQHS
—
0.55
—
0.75
—
0.75
ns
tHZ
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
5, 11
tLZ
–0.7
0.7
–0.75
0.75
–0.75
0.75
ns
6, 11
Read preamble
tRPRE
0.9
1.1
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
0.4
0.6
tCK
DQ and DM input setup time
tDS
0.45
—
0.5
—
0.5
—
ns
Data-out high-impedance time from
CK, /CK
Data-out low-impedance time from
CK, /CK
8
DQ and DM input hold time
tDH
0.45
—
0.5
—
0.5
—
ns
8
DQ and DM input pulse width
tDIPW
1.75
—
1.75
—
1.75
—
ns
7
Write preamble setup time
tWPRE
0
S
—
0
—
0
—
ns
Write preamble
tWPRE 0.25
—
0.25
—
0.25
—
tCK
Write postamble
tWPST 0.4
0.6
0.4
0.6
0.4
0.6
tCK
Write command to first DQS latching
tDQSS 0.75
transition
1.25
0.75
1.25
0.75
1.25
tCK
DQS falling edge to CK setup time
—
0.2
—
0.2
—
tCK
tDSS
0.2
DQS falling edge hold time from CK tDSH
0.2
DQS input high pulse width
tDQSH 0.35
DQS input low pulse width
tDQSL
—
0.2
—
0.2
—
tCK
—
0.35
—
0.35
—
tCK
0.35
—
0.35
—
tCK
0.35
Preliminary Data Sheet E0237E30 (Ver. 3.0)
6
9
EDD5104ABTA, EDD5108ABTA
-6B
Parameter
Symbol min.
-7A
-7B
max.
min.
max
min.
max.
Unit
Notes
Address and control input setup time tIS
0.75
—
0.9
—
0.9
—
Address and control input hold time
tIH
0.75
—
0.9
—
0.9
—
ns
8
tIPW
2.2
—
2.2
—
2.2
—
ns
7
tMRD
2
—
2
—
2
—
tCK
tRAS
42
120000
45
120000
45
120000
ns
tRC
60
—
67.5
—
67.5
—
ns
tRFC
72
—
75
—
75
—
ns
tRCD
18
—
20
—
20
—
ns
Precharge to active command period tRP
18
—
20
—
20
—
ns
Active to Autoprecharge delay
tRAP
tRCD min. —
tRCD min. —
tRCD min. —
ns
Active to active command period
tRRD
12
—
15
—
15
—
ns
Write recovery time
tWR
15
—
15
—
15
—
ns
tDAL
(tWR/tCK)+
(tRP/tCK)
tWTR
1
tREF
—
Address and control input pulse
width
Mode register set command cycle
time
Active to Precharge command
period
Active to Active/Auto refresh
command period
Auto refresh to Active/Auto refresh
command period
Active to Read/Write delay
Auto precharge write recovery and
precharge time
Internal write to Read command
delay
Average periodic refresh interval
(tWR/tCK)+
—
(tRP/tCK)
(tWR/tCK)+
—
(tRP/tCK)
tCK
—
1
—
1
—
tCK
7.8
—
7.8
—
7.8
µs
13
Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter
definitions, see ‘Timing Waveforms’ section.
2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal
transition is defined to occur when the signal level crossing VTT.
3. The timing reference level is VTT.
4. Output valid window is defined to be the period between two successive transition of data out or DQS
(read) signals. The signal transition is defined to occur when the signal level crossing VTT.
5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The
timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage
level, but specify when the device output stops driving.
6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This
parameter is not referred to a specific DOUT voltage level, but specify when the device output begins
driving.
7. Input valid windows is defined to be the period between two successive transition of data input or DQS
(write) signals. The signal transition is defined to occur when the signal level crossing VREF.
8. The timing reference level is VREF.
9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific
reference voltage to judge this transition is not given.
10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not
assured.
11. tCK = tCK (min.) when these parameters are measured. Otherwise, absolute minimum values of these
values are 10% of tCK.
12. VDD is assumed to be 2.5V ± 0.2V. VDD power supply variation per cycle expected to be less than
0.4V/400 cycle.
13. tDAL = (tWR/tCK)+(tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For –7A Speed at CL = 2.5, tCK = 7.5ns, tWR = 15ns and tRP= 20ns,
tDAL = (15ns/7.5ns) + (20ns/7.5ns) = (2) + (3)
tDAL = 5 clocks
Preliminary Data Sheet E0237E30 (Ver. 3.0)
7
EDD5104ABTA, EDD5108ABTA
Test Conditions
Parameter
Symbol
Value
Unit
Input reference voltage
VREF
VDDQ/2
V
Termination voltage
VTT
VREF
V
Input high voltage
VIH (AC)
VREF + 0.31
V
Input low voltage
VIL (AC)
VREF − 0.31
V
VID (AC)
0.62
V
VIX (AC)
VREF
V
SLEW
1
V/ns
Input differential voltage, CK and /CK
inputs
Input differential cross point voltage,
CK and /CK inputs
Input signal slew rate
tCK
VDD
CK VID
VREF
/CK
tCL
VSS
tCH
VIX
VDD
VIH
VIL
VREF
VSS
∆t
SLEW = (VIH (AC) – VIL (AC))/∆t
VTT
Measurement point
RT = 50Ω
DQ
CL = 30pF
Input Waveforms and Output Load
Preliminary Data Sheet E0237E30 (Ver. 3.0)
8
EDD5104ABTA, EDD5108ABTA
Timing Parameter Measured in Clock Cycle
Number of clock cycle
tCK
6ns
7.5ns
Parameter
Symbol
min.
max.
min.
Write to pre-charge command delay (same bank)
tWPD
4 + BL/2
3 + BL/2
Read to pre-charge command delay (same bank)
tRPD
BL/2
BL/2
Write to read command delay (to input all data)
tWRD
2 + BL/2
2 + BL/2
Burst stop command to write command delay
(CL = 2)
tBSTW
2
2
(CL = 2.5)
tBSTW
3
3
Burst stop command to DQ High-Z
(CL = 2)
tBSTZ
2
2
2
2
(CL = 2.5)
tBSTZ
2.5
2.5
2.5
2.5
Read command to write command delay
(to output all data)
(CL = 2)
tRWD
2 + BL/2
2 + BL/2
(CL = 2.5)
tRWD
3 + BL/2
3 + BL/2
Pre-charge command to High-Z
(CL = 2)
tHZP
2
2
2
2
(CL = 2.5)
tHZP
2.5
2.5
2.5
2.5
Write command to data in latency
tWCD
1
1
1
1
Write recovery time
tWR
3
DM to data in latency
tDMD
0
2
0
0
Mode register set command cycle time
tMRD
2
2
Self refresh exit to non-read command
tSNR
12
10
Self refresh exit to read command
tSRD
200
200
Power down entry
tPDEN
1
Power down exit to command input
tPDEX
1
Preliminary Data Sheet E0237E30 (Ver. 3.0)
9
max.
1
1
1
0
1
EDD5104ABTA, EDD5108ABTA
Clock
generator
Block Diagram
Bank 3
Bank 2
Bank 1
A0 to A12, BA0, BA1
Mode
register
Row
address
buffer
and
refresh
counter
Row decoder
CK
/CK
CKE
Memory cell array
Bank 0
Control logic
/CS
/RAS
/CAS
/WE
Command decoder
Sense amp.
Column decoder
Column
address
buffer
and
burst
counter
Data control circuit
Latch circuit
DLL
CK, /CK
Input & Output buffer
DQ
Preliminary Data Sheet E0237E30 (Ver. 3.0)
10
DQS
DM
EDD5104ABTA, EDD5108ABTA
Pin Function
CK, /CK (input pins)
The CK and the /CK are the master clock inputs. All inputs except DM, DQS and DQs are referred to the cross point
of the CK rising edge and the /CK falling edge. When a read operation, DQS and DQs are referred to the cross point
of the CK and the /CK. When a write operation, DQS and DQs are referred to the cross point of the DQS and the
VREF level. DQS for write operation is referred to the cross point of the CK and the /CK. CK is the master clock
input to this pin. The other input signals are referred at CK rising edge.
/CS (input pin)
When /CS is Low, commands and data can be input. When /CS is High, all inputs are ignored. However, internal
operations (bank active, burst operations, etc.) are held.
/RAS, /CAS, and /WE (input pins)
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.
See "Command operation".
A0 toA12 (input pins)
Row address (AX0 to AX12) is determined by the A0 to the A12 level at the cross point of the CK rising edge and the
/CK falling edge in a bank active command cycle. Column address (See “Address Pins Table”) is loaded via the A0
to the A9, A11 and A12 at the cross point of the CK rising edge and the /CK falling edge in a read or a write
command cycle. This column address becomes the starting address of a burst operation.
[Address Pins Table]
Address (A0 to A12)
Part number
Row address
Column address
EDD5104AB
AX0 to AX12
AY0 to AY9, AY11, AY12
EDD5108AB
AX0 to AX12
AY0 to AY9, AY11,
A10 (AP) (input pin)
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If
A10 = High when a precharge command is issued, all banks are precharged. If A10 = Low when a precharge
command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = High when read or write
command, auto-precharge function is enabled. While A10 = Low, auto-precharge function is disabled.
BA0 and BA1 (input pins)
BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See
Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Remark: H: VIH. L: VIL
Preliminary Data Sheet E0237E30 (Ver. 3.0)
11
EDD5104ABTA, EDD5108ABTA
CKE (input pin)
This pin determines whether or not the next CK is valid. If CKE is High, the next CK rising edge is valid. If CKE is
Low. CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when
the CKE is driven Low and exited when it resumes to High. CKE must be maintained high throughout read or write
access.
The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge
and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper
hold time tIH.
DM (input pin)
DM is the reference signal of the data input mask function. DM is sampled at the cross point of DQS and VREF.
DQ0 toDQ7 (input/output pins)
Data is input to and output from these pins (DQ0 to DQ3; EDD5104AB, DQ0 to DQ7; EDD5108AB).
DQS (input and output pin): DQS provides the read data strobe (as output) and the write data strobe (as input).
VDD, VSS, VDDQ, VSSQ (Power supply)
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output
buffers.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
12
EDD5104ABTA, EDD5108ABTA
Command Operation
Command Truth Table
DDR SDRAM recognize the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. All other
combinations than those in the table below are illegal.
CKE
Command
Symbol
n–1
n
/CS
/RAS /CAS /WE
BA1
BA0
AP
Address
Ignore command
DESL
H
H
H
×
×
×
×
×
×
×
No operation
NOP
H
H
L
H
H
H
×
×
×
×
Burst stop in read command
BST
H
H
L
H
H
L
×
×
×
×
Column address and read command
READ
H
H
L
H
L
H
V
V
L
V
Read with auto-precharge
READA
H
H
L
H
L
H
V
V
H
V
Column address and write command
WRIT
H
H
L
H
L
L
V
V
L
V
Write with auto-precharge
WRITA
H
H
L
H
L
L
V
V
H
V
Row address strobe and bank active
ACT
H
H
L
L
H
H
V
V
V
V
Precharge select bank
PRE
H
H
L
L
H
L
V
V
L
×
Precharge all bank
PALL
H
H
L
L
H
L
×
×
H
×
Refresh
REF
H
H
L
L
L
H
×
×
×
×
SELF
H
L
L
L
L
H
×
×
×
×
MRS
H
H
L
L
L
L
L
L
L
V
EMRS
H
H
L
L
L
L
L
H
L
V
Mode register set
Remark: H: VIH. L: VIL. ×: VIH or VIL V: Valid address input
Note: The CKE level must be kept for 1 CK cycle at least.
Ignore command [DESL]
When /CS is High at the cross point of the CK rising edge and the VREF level, every input are neglected and internal
status is held.
No operation [NOP]
As long as this command is input at the cross point of the CK rising edge and the VREF level, address and data
input are neglected and internal status is held.
Burst stop in read operation [BST]
This command stops a burst read operation, which is not applicable for a burst write operation.
Column address strobe and read command [READ]
This command starts a read operation. The start address of the burst read is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation,
the output buffer becomes High-Z.
Read with auto-precharge [READA]
This command starts a read operation. After completion of the read operation, precharge is automatically executed.
Column address strobe and write command [WRIT]
This command starts a write operation. The start address of the burst write is determined by the column address
(See “Address Pins Table” in Pin Function) and the bank select address.
Write with auto-precharge [WRITA]
This command starts a write operation. After completion of the write operation, precharge is automatically executed.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
13
EDD5104ABTA, EDD5108ABTA
Row address strobe and bank activate [ACT]
This command activates the bank that is selected by BA0, BA1 and determines the row address (AX0 to AX12).
(See Bank Select Signal Table)
Precharge selected bank [PRE]
This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table)
[Bank Select Signal Table]
BA0
BA1
Bank 0
L
L
Bank 1
H
L
Bank 2
L
H
Bank 3
H
H
Remark: H: VIH. L: VIL
Precharge all banks [PALL]
This command starts a precharge operation for all banks.
Refresh [REF/SELF]
This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another
is self-refresh. For details, refer to the CKE truth table section.
Mode register set/Extended mode register set [MRS/EMRS]
The DDR SDRAM has the two mode registers, the mode register and the extended mode register, to defines how it
works. The both mode registers are set through the address pins (the A0 to the A12, BA0 to BA1) in the mode
register set cycle. For details, refer to "Mode register and extended mode register set".
CKE Truth Table
CKE
Current state
Command
n–1
n
/CS
/RAS
/CAS
/WE
Address
Notes
Idle
Auto-refresh command (REF)
H
H
L
L
L
H
×
2
Idle
Self-refresh entry (SELF)
H
L
L
L
L
H
×
2
Idle
Power down entry (PDEN)
H
L
L
H
H
H
×
H
L
H
×
×
×
×
Self refresh
Self refresh exit (SELFX)
L
H
L
H
H
H
×
L
H
H
×
×
×
×
L
H
L
H
H
H
×
L
H
H
×
×
×
×
Power down
Power down exit (PDEX)
Remark: H: VIH. L: VIL. ×: VIH or VIL.
Notes: 1. All the banks must be in IDLE before executing this command.
2. The CKE level must be kept for 1 CK cycle at least.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
14
EDD5104ABTA, EDD5108ABTA
Function Truth Table
The following tables show the operations that are performed when each command is issued in each state of the
DDR SDRAM.
Function Truth Table (1)
Current state
Precharging*
1
/CS
Idle*
Refresh
(auto-refresh)*3
Address
Command
Operation
Next state
ldle
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
2
/RAS /CAS /WE
H
H
L
×
BST
ldle
11
—
11
ILLEGAL*
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
—
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*11
—
11
ILLEGAL*
—
L
L
H
H
BA, RA
ACT
L
L
H
L
L
L
L
BA, A10
PRE, PALL
×
×
H
×
×
×
×
L
H
H
H
L
H
H
L
L
H
L
H
NOP
ldle
ILLEGAL
—
DESL
NOP
ldle
×
NOP
NOP
ldle
×
BST
ILLEGAL*11
—
BA, CA, A10
READ/READA
ILLEGAL*11
—
11
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
—
L
L
H
H
BA, RA
ACT
Activating
Active
L
L
H
L
BA, A10
PRE, PALL
NOP
ldle
ldle/
Self refresh
L
L
L
H
×
REF, SELF
Refresh/
Self refresh*12
L
L
L
L
MODE
MRS
Mode register set*12
ldle
H
×
×
×
×
DESL
NOP
ldle
L
H
H
H
×
NOP
NOP
ldle
L
H
H
L
×
BST
ILLEGAL
—
L
H
L
×
×
ILLEGAL
—
L
L
×
×
×
ILLEGAL
—
Preliminary Data Sheet E0237E30 (Ver. 3.0)
15
EDD5104ABTA, EDD5108ABTA
Function Truth Table (2)
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Next state
Activating*4
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
ILLEGAL*
—
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*11
—
11
—
11
L
5
Active*
Read*6
Active
11
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
L
L
H
H
BA, RA
ACT
ILLEGAL*
—
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*11
—
L
L
L
×
×
ILLEGAL
—
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
Active
L
H
H
L
×
BST
ILLEGAL
Active
L
H
L
H
BA, CA, A10
READ/READA
Starting read operation Read/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
Write
Starting write operation recovering/
precharging
L
L
H
H
BA, RA
ACT
ILLEGAL*11
—
L
L
H
L
BA, A10
PRE, PALL
Pre-charge
Idle
L
L
L
×
×
ILLEGAL
—
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
Active
L
H
H
L
×
BST
BST
Active
Active
L
H
L
H
BA, CA, A10
READ/READA
Interrupting burst read
operation to
start new read
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*13
—
11
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
×
×
Preliminary Data Sheet E0237E30 (Ver. 3.0)
16
ACT
ILLEGAL*
—
PRE, PALL
Interrupting burst
read operation to
start pre-charge
Precharging
ILLEGAL
—
EDD5104ABTA, EDD5108ABTA
Function Truth Table (3)
Current state
/CS
/RAS /CAS /WE
Address
Command
Operation
Next state
Read with auto-preH
charge*7
×
×
×
×
DESL
NOP
Precharging
L
H
H
H
×
NOP
NOP
Precharging
L
H
H
L
×
BST
ILLEGAL
L
8
Write*
9
Write recovering*
L
H
BA, CA, A10
READ/READA
ILLEGAL*
14
—
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL*
—
L
L
H
H
BA, RA
ACT
ILLEGAL*11, 14
—
L
L
H
L
BA, A10
PRE, PALL
ILLEGAL*11, 14
—
L
L
L
×
×
ILLEGAL
H
×
×
×
×
DESL
NOP
L
H
H
H
×
NOP
NOP
L
H
H
L
×
BST
—
Write
recovering
Write
recovering
ILLEGAL
—
Interrupting burst write
operation to
start read operation.
Interrupting burst write
operation to
start new write
operation.
L
H
L
H
BA, CA, A10
READ/READA
L
H
L
L
BA, CA, A10
WRIT/WRITA
L
L
H
H
BA, RA
ACT
ILLEGAL*11
—
PRE, PALL
Interrupting write
operation to start precharge.
Read/ReadA
Idle
ILLEGAL
—
Write/WriteA
L
L
H
L
BA, A10
L
L
L
×
×
H
×
×
×
×
DESL
NOP
Active
L
H
H
H
×
NOP
NOP
Active
L
H
H
L
×
BST
ILLEGAL
—
L
H
L
H
BA, CA, A10
READ/READA
Starting read operation. Read/ReadA
WRIT/WRITA
Starting new write
operation.
L
L
Write with autopre-charge*10
H
—
14
H
L
L
H
L
H
BA, CA, A10
BA, RA
ACT
PRE/PALL
Write/WriteA
11
—
11
ILLEGAL*
—
ILLEGAL
—
ILLEGAL*
L
L
H
L
BA, A10
L
L
L
×
×
H
×
×
×
×
DESL
NOP
Precharging
L
H
H
H
×
NOP
NOP
Precharging
L
H
H
L
×
BST
ILLEGAL
—
14
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL*
—
L
H
L
L
BA, CA, A10
WRIT/WRIT A
ILLEGAL*14
—
L
L
H
H
BA, RA
L
L
H
L
BA, A10
L
L
L
×
×
ACT
PRE, PALL
Remark: H: VIH. L: VIL. ×: VIH or VIL
Preliminary Data Sheet E0237E30 (Ver. 3.0)
17
11, 14
—
11, 14
ILLEGAL*
—
ILLEGAL
—
ILLEGAL*
EDD5104ABTA, EDD5108ABTA
Notes: 1.
2.
3.
4.
5.
6.
The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued.
The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued.
The DDR SDRAM is in "Refresh" state for tRFC after auto-refresh command is issued.
The DDR SDRAM is in "Activating" state for tRCD after ACT command is issued.
The DDR SDRAM is in "Active" state after "Activating" is completed.
The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned
off.
7. The DDR SDRAM is in "READ with auto-precharge" from READA command until burst data has been
output and DQ output circuits are turned off.
8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input.
9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input.
10. The DDR SDRAM is in "Write with auto-precharge" until tWR after the last data has been input.
11. This command may be issued for other banks, depending on the state of the banks.
12. All banks must be in "IDLE".
13. Before executing a write command to stop the preceding burst read operation, BST command must be
issued.
14. EDD5104ABTA and EDD5108ABTA support the concurrent auto-precharge feature, a read with autoprecharge enabled,or a write with auto-precharge enabled, may be followed by any column command to
other banks, as long as that command does not interrupt the read or write data transfer, and
all other related limitations apply. (E.g. Conflict between READ data and WRITE data must be avoided.)
The minimum delay from a read or write command with auto precharge enabled, to a command to a
different bank, is summarized below.
From command
To command (different bank, noninterrupting command)
Minimum delay
(Concurrent AP supported)
Units
Read w/AP
Read or Read w/AP
BL/2
tCK
Write w/AP
Write or Write w/AP
CL(rounded up)+ (BL/2)
tCK
Precharge or Activate
1
tCK
Read or Read w/AP
1 + (BL/2) + tWTR
tCK
Write or Write w/AP
BL/2
tCK
Precharge or Activate
1
tCK
Preliminary Data Sheet E0237E30 (Ver. 3.0)
18
EDD5104ABTA, EDD5108ABTA
Command Truth Table for CKE
Current State
CKE
n–1 n
Self refresh
Self refresh recovery
Power down
All banks idle
Row active
/CS
/RAS /CAS /WE Address
Operation
H
×
×
×
×
×
×
INVALID, CK (n-1) would exit self refresh
L
H
H
×
×
×
×
Self refresh recovery
L
H
L
H
H
×
×
Self refresh recovery
L
H
L
H
L
×
×
ILLEGAL
L
H
L
L
×
×
×
ILLEGAL
L
L
×
×
×
×
×
Maintain self refresh
H
H
H
×
×
×
×
Idle after tRC
H
H
L
H
H
×
×
Idle after tRC
H
H
L
H
L
×
×
ILLEGAL
H
H
L
L
×
×
×
ILLEGAL
H
L
H
×
×
×
×
ILLEGAL
H
L
L
H
H
×
×
ILLEGAL
H
L
L
H
L
×
×
ILLEGAL
H
L
L
L
×
×
×
ILLEGAL
H
×
×
×
×
×
Notes
INVALID, CK (n – 1) would exit power down
L
H
H
×
×
×
×
L
H
L
H
H
H
×
L
L
×
×
×
×
×
EXIT power down → Idle
Maintain power down mode
H
H
H
×
×
×
Refer to operations in Function Truth Table
H
H
L
H
×
×
Refer to operations in Function Truth Table
H
H
L
L
H
×
Refer to operations in Function Truth Table
H
H
L
L
L
H
×
H
H
L
L
L
L
OPCODE Refer to operations in Function Truth Table
H
L
H
×
×
×
Refer to operations in Function Truth Table
H
L
L
H
×
×
Refer to operations in Function Truth Table
H
L
L
L
H
×
Refer to operations in Function Truth Table
H
L
L
L
L
H
×
CBR (auto) refresh
Self refresh
H
L
L
L
L
L
OPCODE Refer to operations in Function Truth Table
L
×
×
×
×
×
×
Power down
H
×
×
×
×
×
×
Refer to operations in Function Truth Table
L
×
×
×
×
×
×
Power down
1
1
1
Remark: H: VIH. L: VIL. ×: VIH or VIL
Note: Self refresh can be entered only from the all banks idle state. Power down can be entered only from all
banks idle or row active state.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
19
EDD5104ABTA, EDD5108ABTA
Auto-refresh command [REF]
This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined
by the internal refresh controller. The average refresh cycle is 7.8 µs. The output buffer becomes High-Z after autorefresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can
be issued tRFC after the last auto-refresh command.
Self-refresh entry [SELF]
This command starts self-refresh. The self-refresh operation continues as long as CKE is held Low. During the selfrefresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is
terminated by a self-refresh exit command.
Power down mode entry [PDEN]
tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In
power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode
continues while CKE is held Low. No internal refresh operation occurs during the power down mode. [PDEN] do not
disable DLL.
Self-refresh exit [SELFX]
This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be satisfied.
((tSNR =)10 cycles for tCK = 7.5 ns or 12 cycles for tCK = 6.0 ns after [SELFX]) To issue read command, tSRD has
to be satisfied to adjust DOUT timing by DLL. (200 cycles after [SELFX]) After the exit, input auto-refresh command
within 7.8 µs.
Power down exit [PDEX]
The DDR SDRAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
20
EDD5104ABTA, EDD5108ABTA
Simplified State Diagram
SELF
REFRESH
SR ENTRY
SR EXIT
MRS
MODE
REGISTER
SET
REFRESH
IDLE
*1
AUTO
REFRESH
CKE
CKE_
IDLE
POWER
DOWN
ACTIVE
ACTIVE
POWER
DOWN
CKE_
CKE
ROW
ACTIVE
BST
WRITE
Write
READ
WRITE
WITH
AP
WRITE
READ
WITH
AP
READ
READ
READ
WITH AP
WRITE
WITH AP
Read
READ
WITH AP
PRECHARGE
WRITEA
READA
PRECHARGE
POWER
APPLIED
POWER
ON
PRECHARGE
PRECHARGE
PRECHARGE
Automatic transition after completion of command.
Transition resulting from command input.
Note: 1. After the auto-refresh operation, precharge operation is performed automatically
and enter the IDLE state.
Preliminary Data Sheet E0237E30 (Ver. 3.0)
21
EDD5104ABTA, EDD5108ABTA
Operation of the DDR SDRAM
Power-up Sequence
The following sequence is recommended for Power-up.
(1) Apply power and attempt to maintain CKE at an LVCMOS low state (all other inputs may be undefined).
Apply VDD before or at the same time as VDDQ.
Apply VDDQ before or at the same time as VTT and VREF.
(2) Start clock and maintain stable condition for a minimum of 200 µs.
(3) After the minimum 200 µs of stable power and clock (CK, /CK), apply NOP and take CKE high.
(4) Issue precharge all command for the device.
(5) Issue EMRS to enable DLL.
(6) Issue a mode register set command (MRS) for "DLL reset" with bit A8 set to high (An additional 200 cycles of
clock input is required to lock the DLL after every DLL reset).
(7) Issue precharge all command for the device.
(8) Issue 2 or more auto-refresh commands.
(9) Issue a mode register set command to initialize device operation.
/CK
CK
Command
EMRS
PALL
2 cycles (min.)
MRS
PALL
REF
REF
REF
tRP
2 cycles (min.) 2 cycles (min.)
Any
command
MRS
tRFC
tRFC
2 cycles (min.)
DLL reset
DLL enable
200 cycles (min)
Power-up Sequence after CKE Goes High
Mode Register and Extended Mode Register Set
There are two mode registers, the mode register and the extended mode register so as to define the operating
mode. Parameters are set to both through the A0 to the A12 and BA0, BA1 pins by the mode register set command
[MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are
set by inputting signal via the A0 to the A12 and BA0, BA1 during mode register set cycles. BA0 and BA1 determine
which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode
register must be set.
Remind that no other parameters are shown in the table bellow are allowed to input to the registers.
BA0
BA1
A12
0
0
0
A11 A10 A9
0
0
0
A8
A7
DR
0
A6
A5
A4
LMODE
A3
A2
A1
BT
A0
BL
MRS
A8 DLL Reset A6 A5 A4 CAS Latency
2
0 1 0
0 No
1
1 Yes
1
0
2.5
A3 Burst Type
0 Sequential
1 Interleave
Mode Register Set [MRS] (BA0 = 0, BA1 = 0)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
22
A2 A1 A0
Burst Length
0
0
0
1
BT=0 BT=1
2
2
1
4
4
0
0
1
1
8
8
EDD5104ABTA, EDD5108ABTA
BA0 BA1
1
A12 A11 A10 A9
0
0
0
0
0
A8
A7
A6
A5
A4
A3
A2
A1
A0
0
0
0
0
0
0
0
0
DLL
EMRS
A0 DLL Control
0 DLL Enable
1 DLL Disable
Extended Mode Register Set [EMRS] (BA0 = 1, BA1 = 0)
Burst Operation
The burst type (BT) and the first three bits of the column address determine the order of a data out.
Burst length = 2
Burst length = 4
Starting Ad. Addressing(decimal)
A0
Sequence
Interleave
Starting Ad. Addressing(decimal)
A1
A0
0
0, 1,
0, 1,
0
0
0, 1, 2, 3,
0, 1, 2, 3,
1
1, 0,
1, 0,
0
1
1, 2, 3, 0,
1, 0, 3, 2,
1
0
2, 3, 0, 1,
2, 3, 0, 1,
1
1
3, 0, 1, 2,
3, 2, 1, 0,
Sequence
Interleave
Burst length = 8
Addressing(decimal)
Starting Ad.
A2
A1
A0
0
0
0
Sequence
0, 1, 2, 3, 4, 5, 6, 7,
Interleave
0, 1, 2, 3, 4, 5, 6, 7,
0
0
1
1, 2, 3, 4, 5, 6, 7, 0,
1, 0, 3, 2, 5, 4, 7, 6,
0
1
0
2, 3, 4, 5, 6, 7, 0, 1,
2, 3, 0, 1, 6, 7, 4, 5,
0
1
1
3, 4, 5, 6, 7, 0, 1, 2,
3, 2, 1, 0, 7, 6, 5, 4,
1
0
0
4, 5, 6, 7, 0, 1, 2, 3,
4, 5, 6, 7, 0, 1, 2, 3,
1
0
1
5, 6, 7, 0, 1, 2, 3, 4,
5, 4, 7, 6, 1, 0, 3, 2,
1
1
0
6, 7, 0, 1, 2, 3, 4, 5,
6, 7, 4, 5, 2, 3, 0, 1,
1
1
1
7, 0, 1, 2, 3, 4, 5, 6,
7, 6, 5, 4, 3, 2, 1, 0,
Preliminary Data Sheet E0237E30 (Ver. 3.0)
23
; ;;;
EDD5104ABTA, EDD5108ABTA
Read/Write Operations
Bank active
A read or a write operation begins with the bank active command [ACT]. The bank active command determines a
bank address and a row address. For the bank and the row, a read or a write command can be issued tRCD after
the ACT is issued.
Read operation
The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read
command is issued. The burst length (BL) determines the length of a sequential output data by the read command
that can be set to 2, 4, or 8. The starting address of the burst read is defined by the column address, the bank select
address which are loaded via the A0 to A12 and BA0, BA1 pins in the cycle when the read command is issued. The
data output timing are characterized by CL (2 or 2.5) and tAC. The read burst start CL • tCK + tAC (ns) after the
clock rising edge where the read command are latched. The DDR SDRAM output the data strobe through DQS
simultaneously with data. tRPRE prior to the first rising edge of the data strobe, the DQS are driven Low from VTT
level. This low period of DQS is referred as read preamble. The burst data are output coincidentally at both the
rising and falling edge of the data strobe. The DQ pins become High-Z in the next cycle after the burst read
operation completed. tRPST from the last falling edge of the data strobe, the DQS pins become High-Z. This low
period of DQS is referred as read postamble.
t0
CK
/CK
Command
Address
t1
t2
t3
t4
t5
t6
t7
t8
tRCD
NOP
ACT
Row
NOP
READ
NOP
Column
tRPRE
out0 out1
BL = 2
DQS
DQ
tRPST
out0 out1 out2 out3
BL = 4
out0 out1 out2 out3 out4 out5 out6 out7
BL = 8
CL = 2
BL: Burst length
Read Operation (Burst Length)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
24
EDD5104ABTA, EDD5108ABTA
t0
t0.5
t1
t1.5
t2
t2.5
t3
t3.5
t4
t4.5
t5
t5.5
CK
/CK
Command
READ
NOP
tRPRE
tRPST
VTT
DQS
CL = 2
tAC,tDQSCK
out0
DQ
out1
out2
VTT
out3
tRPRE
tRPST
VTT
DQS
CL = 2.5
tAC,tDQSCK
out0
DQ
out1
out2
VTT
out3
Read Operation (/CAS Latency)
Write operation
The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued.
The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4,
or 8. The latency from write command to data input is fixed to 1. The starting address of the burst read is defined by
the column address, the bank select address which are loaded via the A0 to A12, BA0 to BA1 pins in the cycle when
the write command is issued. DQS should be input as the strobe for the input-data and DM as well during burst
operation. tWPRE prior to the first rising edge of the DQS should be set to Low and tWPST after the last falling edge
of the data strobe can be set to High-Z. The leading low period of DQS is referred as write preamble. The last low
period of DQS is referred as write postamble.
t0
t1
t2
t3.5
t3
t4
t5
t6
t7
t8
CK
/CK
Command
Address
tRCD
NOP
ACT
Row
NOP
WRITE
NOP
Column
tWPRE
tWPRES
BL = 2
in0
in1
tWPST
DQS
DQ
BL = 4
BL = 8
in0
in1
in2
in3
in0
in1
in2
in3
in4
in5
in6
in7
BL: Burst length
Write Operation
Preliminary Data Sheet E0237E30 (Ver. 3.0)
25
EDD5104ABTA, EDD5108ABTA
Burst Stop
Burst stop command during burst read
The burst stop (BST) command is used to stop data output during a burst read. The BST command stops the burst
read and sets the output buffer to High-Z. tBSTZ (= CL) cycles after a BST command issued, the DQ pins become
High-Z. The BST command is not supported for the burst write operation. Note that bank address is not referred
when this command is executed.
t0
t0.5
t1
t1.5
t2
t2.5
t3
t3.5
t4
t4.5
t5
t5.5
CK
/CK
Command
READ
BST
NOP
tBSTZ
2 cycles
DQS
CL = 2
out0
DQ
out1
tBSTZ
2.5 cycles
DQS
CL = 2.5
out0
DQ
out1
CL: /CAS latency
Burst Stop during a Read Operation
Preliminary Data Sheet E0237E30 (Ver. 3.0)
26
;; ;;
EDD5104ABTA, EDD5108ABTA
Auto Precharge
Read with auto-precharge
The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2)
cycle after READA command input. tRAP specification for READA allows a read command with auto precharge to be
issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column
command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge
command does not limit row commands execution for other bank. Refer to ‘Function truth table (3) and related notes
(Notes.*14)‘.
CK
/CK
Command
ACT
tRP (min)
tRPD
2 cycles (= BL/2)
tRAP (min) = tRCD (min)
READA
NOP
ACT
DQS
tAC,tDQSCK
DQ
out0
Note: Internal auto-precharge starts at the timing indicated by "
out1
out2
out3
".
Read with auto-precharge
Write with auto-precharge
The precharge is automatically performed after completing a burst write operation. The precharge operation is
started (BL/ 2 + 3) cycles after WRITA command issued. A column command to the other banks can be issued the
next cycle after the internal precharge command issued. Write with auto-precharge command does not limit row
commands execution for other bank. Refer to ‘Function truth table (3) and related notes (Notes.*14)‘.
CK
/CK
tRAS (min)
tRP
tRCD (min)
Command
ACT
NOP
NOP
WRITA
ACT
BL/2 + 3 cycles
DM
DQS
DQ
in1
in2
in3
Note: Internal auto-precharge starts at the timing indicated by "
in4
".
Burst Write (BL = 4)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
27
BL = 4
;
;;;;
EDD5104ABTA, EDD5108ABTA
Command Intervals
A Read command to the consecutive Read command Interval
Destination row of the
consecutive read command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
Operation
The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
The consecutive read can be performed after an interval of no less than 1 cycle to
interrupt the preceding read operation.
Precharge the bank without interrupting the preceding read operation. tRP after
the precharge command, issue the ACT command. tRCD after the ACT command,
the consecutive read command can be issued.
IDLE
t0
t1
t2
t3
Command
ACT
NOP
READ
READ
Address
Row
t4
t5
t6
t7
t8
CK
/CK
NOP
Column A Column B
BA
out out
A0 A1
DQ
Column = A Column = B
Read
Read
out
B0
Column = A
Dout
out
B1
out
B2
out
B3
Column = B
Dout
DQS
CL = 2
BL = 4
Bank0
Bank0
Active
READ to READ Command Interval (same ROW address in the same bank)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
28
EDD5104ABTA, EDD5108ABTA
t0
t1
t2
t3
t4
t5
ACT
NOP
ACT
NOP
READ
READ
t6
t7
t9
t8
CK
/CK
Command
Address
Row0
Row1
NOP
Column A Column B
BA
out out
A0 A1
DQ
Column = A Column = B
Read
Read
Bank0
Dout
out out out out
B0 B1 B2 B3
Bank3
Dout
DQS
Bank0
Active
Bank3
Active
Bank0
Read
Bank3
Read
READ to READ Command Interval (different bank)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
29
CL = 2
BL = 4
;
;;;;
EDD5104ABTA, EDD5108ABTA
A Write command to the consecutive Write command Interval
Destination row of the consecutive write
command
1.
2.
3.
Bank
address
Row address State
Same
Same
ACTIVE
Same
Different
—
Different
Any
ACTIVE
Operation
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
Precharge the bank to interrupt the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A write command to the
consecutive precharge interval’ section.
The consecutive write can be performed after an interval of no less than 1 cycle to
interrupt the preceding write operation.
Precharge the bank without interrupting the preceding write operation. tRP after
the precharge command, issue the ACT command. tRCD after the ACT command,
the consecutive write command can be issued.
IDLE
t0
t1
t2
t3
Command
ACT
NOP
WRIT
WRIT
Address
Row
t4
t5
t6
t7
t8
CK
/CK
NOP
Column A Column B
BA
DQ
inA0 inA1 inB0 inB1 inB2 inB3
Column = A
Write
Column = B
Write
DQS
Bank0
Active
BL = 4
Bank0
WRITE to WRITE Command Interval (same ROW address in the same bank)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
30
EDD5104ABTA, EDD5108ABTA
t0
t1
t2
t3
t4
ACT
NOP
ACT
WRIT
WRIT
t5
t6
t7
t8
t9
CK
/CK
Command
Address
Row0
Row1
NOP
Column A Column B
BA
DQ
inA0 inA1 inB0 inB1 inB2 inB3
Bank0
Write
Bank3
Write
DQS
Bank0
Active
Bank3
Active
BL = 4
Bank0, 3
WRITE to WRITE Command Interval (different bank)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
31
EDD5104ABTA, EDD5108ABTA
A Read command to the consecutive Write command interval with the BST command
Destination row of the consecutive write
command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
IDLE
Operation
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank to interrupt the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the
consecutive write command can be issued.
Precharge the bank independently of the preceding read operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive write command can be issued.
t0
t1
t2
t3
READ
BST
NOP
WRIT
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
tBSTW (≥ tBSTZ)
DM
tBSTZ (= CL)
DQ
out0 out1
in0
in1
in2
in3
High-Z
DQS
OUTPUT
INPUT
READ to WRITE Command Interval
Preliminary Data Sheet E0237E30 (Ver. 3.0)
32
BL = 4
CL = 2
EDD5104ABTA, EDD5108ABTA
A Write command to the consecutive Read command interval: To complete the burst operation
Destination row of the consecutive read
command
Bank
address
Row address State
1.
Same
Same
ACTIVE
2.
Same
Different
—
3.
Different
Any
ACTIVE
Operation
To complete the burst operation, the consecutive read command should be
performed tWRD (= BL/ 2 + 2) after the write command.
Precharge the bank tWRD after the preceding write command. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued. See ‘A read command to the
consecutive precharge interval’ section.
To complete a burst operation, the consecutive read command should be
performed tWRD (= BL/ 2 + 2) after the write command.
Precharge the bank independently of the preceding write operation. tRP after the
precharge command, issue the ACT command. tRCD after the ACT command, the
consecutive read command can be issued.
IDLE
t0
t1
t2
t3
t4
t5
t6
CK
/CK
Command
WRIT
NOP
READ
NOP
tWRD (min)
tWTR*
BL/2 + 2 cycle
DM
DQ
in0
in1
in2
out0
in3
out1
out2
DQS
INPUT
OUTPUT
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
WRITE to READ Command Interval
Preliminary Data Sheet E0237E30 (Ver. 3.0)
33
BL = 4
CL = 2
EDD5104ABTA, EDD5108ABTA
A Write command to the consecutive Read command interval: To interrupt the write operation
Destination row of the consecutive read
command
Bank
address
Row address State
Operation
1.
Same
Same
ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
2.
Same
Different
—
—*1
3.
Different
Any
ACTIVE
DM must be input 1 cycle prior to the read command input to prevent from being
written invalid data. In case, the read command is input in the next cycle of the
write command, DM is not necessary.
IDLE
—*1
Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write
operation in this case.
WRITE to READ Command Interval (Same bank, same ROW address)
t0
t1
WRIT
READ
t2
t3
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
1 cycle
CL=2
DM
DQ
in0
in1
in2
out0 out1 out2 out3
High-Z
High-Z
DQS
BL = 4
CL= 2
Data masked
[WRITE to READ delay = 1 clock cycle]
Preliminary Data Sheet E0237E30 (Ver. 3.0)
34
EDD5104ABTA, EDD5108ABTA
t0
t1
t2
WRIT
NOP
READ
t3
t4
t5
t6
t7
t8
CK
/CK
Command
2 cycle
NOP
CL=2
DM
in0
DQ
in1
in2
High-Z
out0 out1 out2 out3
in3
High-Z
DQS
Data masked
BL = 4
CL= 2
[WRITE to READ delay = 2 clock cycle]
t0
t1
t2
t3
t4
t5
t6
t7
t8
CK
/CK
Command
WRIT
NOP
READ
3 cycle
NOP
CL=2
tWTR*
DM
DQ
in0
in1
in2
out0 out1 out2 out3
in3
DQS
BL = 4
CL= 2
Data masked
Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR.
[WRITE to READ delay = 3 clock cycle]
Preliminary Data Sheet E0237E30 (Ver. 3.0)
35
EDD5104ABTA, EDD5108ABTA
A Read command to the consecutive Precharge command interval (same bank): To output all data
To complete a burst read operation and get a burst length of data, the consecutive precharge command must be
issued tRPD (= BL/ 2 cycles) after the read command is issued.
t0
t1
t2
t3
READ
NOP
PRE/
PALL
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
DQ
NOP
out0 out1 out2 out3
DQS
tRPD = BL/2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2, BL = 4)
t0
t1
t2
t3
NOP
READ
NOP
PRE/
PALL
t4
t5
t6
t7
t8
CLK
/CLK
Command
DQ
NOP
out0 out1 out2 out3
DQS
tRPD = BL/2
READ to PRECHARGE Command Interval (same bank): To output all data (CL = 2.5, BL = 4)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
36
EDD5104ABTA, EDD5108ABTA
READ to PRECHARGE Command Interval (same bank): To stop output data
A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP
(= CL) after the precharge command.
t0
t1
t2
t3
READ
PRE/PALL
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
DQ
NOP
High-Z
out0 out1
High-Z
DQS
tHZP
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2, BL = 2, 4, 8)
t0
t1
t2
t3
READ
PRE/PALL
t4
t5
t6
t7
t8
CK
/CK
Command
NOP
NOP
CL = 2.5
High-Z
DQ
out0 out1
High-Z
DQS
tHZP
READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 2.5, BL = 2, 4, 8)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
37
;;;;;;;
;; ;
EDD5104ABTA, EDD5108ABTA
A Write command to the consecutive Precharge command interval (same bank)
The minimum interval tWPD ((BL/2 + 3 for tCK = 7.5 ns, BL/2 + 4 for tCK = 6 ns) cycles) is necessary between the
write command and the precharge command.
t0
t1
t2
t3
t4
t5
t6
t7
CK
/CK
Command
WRIT
PRE/PALL
NOP
NOP
tWPD
tWR
DM
DQS
DQ
in0
in1
in2
in3
Last data input
WRITE to PRECHARGE Command Interval (same bank) (BL = 4)
Precharge Termination in Write Cycles
During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command
of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command
is issued, the invalid data must be masked by DM.
t0
t1
t2
t3
t4
t5
t6
t7
CK
/CK
Command
WRIT
PRE/PALL
NOP
tWR
DM
DQS
DQ
in0
in1
in2
in3
Data masked
Precharge Termination in Write Cycles (same bank) (BL = 4)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
38
NOP
EDD5104ABTA, EDD5108ABTA
Bank active command interval
Destination row of the consecutive ACT
command
Bank
address
Row address
State
1.
Same
Any
ACTIVE
2.
Different
Any
ACTIVE
IDLE
Operation
Two successive ACT commands can be issued at tRC interval. In between two
successive ACT operations, precharge command should be executed.
Precharge the bank. tRP after the precharge command, the consecutive ACT
command can be issued.
tRRD after an ACT command, the next ACT command can be issued.
CK
/CK
Command
Address
ACTV
ACT
ACT
ROW: 0
ROW: 1
Bank0
Active
Bank3
Active
NOP
PRE
NOP
ACT
NOP
ROW: 0
BA
tRRD
Bank0
Precharge
Bank0
Active
tRC
Bank Active to Bank Active
Mode register set to Bank-active command interval
The interval between setting the mode register and executing a bank-active command must be no less than tMRD.
CK
/CK
Command
MRS
Address
CODE
NOP
ACT
BS and ROW
Mode Register Set
tMRD
Preliminary Data Sheet E0237E30 (Ver. 3.0)
39
Bank3
Active
NOP
EDD5104ABTA, EDD5108ABTA
DM Control
DM can mask input data. By setting DM to Low, data can be written. When DM is set to High, the corresponding
data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask
function is 0.
t1
t2
t3
t4
DQS
DQ
Mask
Mask
DM
Write mask latency = 0
DM Control
Preliminary Data Sheet E0237E30 (Ver. 3.0)
40
t5
t6
;;;;;;
EDD5104ABTA, EDD5108ABTA
Timing Waveforms
Command and Addresses Input Timing Definition
CK
/CK
tIS
Command
(/RAS, /CAS,
/WE, /CS)
tIH
VREF
tIS
tIH
VREF
Address
Read Timing Definition
tCK
/CK
CK
tCL
tCH
tDQSCK
tDQSCK
tDQSCK
tDQSCK
tDQSCK
tDQSCK tRPST
tRPRE
DQS
tDQSQ
tLZ
DQ
(Dout)
tAC
tQH
tAC
tDQSQ
tAC
tHZ
tDQSQ tQH
tDQSQ tQH
tQH
tQH
tAC
Write Timing Definition
tCK
/CK
CK
tDQSS
DQS
tDSS
tDSH
tDSS
VREF
tWPRES
tDQSL
tWPRE
DQ
(Din)
tWPST
VREF
tDS
DM
tDQSH
tDIPW
tDH
VREF
tDS
tDH
tDIPW
Preliminary Data Sheet E0237E30 (Ver. 3.0)
41
tDIPW
EDD5104ABTA, EDD5108ABTA
Read Cycle
tCK
tCH tCL
CK
/CK
tRC
VIH
CKE
tRAS
tRCD
tRP
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
/CS
/RAS
/CAS
/WE
BA
A10
tIS tIH
Address
DM
DQS
DQ (output)
tRPRE
High-Z
tRPST
High-Z
Bank 0
Active
Bank 0
Read
Bank 0
Precharge
Preliminary Data Sheet E0237E30 (Ver. 3.0)
42
CL = 2
BL = 4
Bank0 Access
= VIH or VIL
EDD5104ABTA, EDD5108ABTA
Write Cycle
tCK
tCH tCL
CK
/CK
tRC
VIH
CKE
tRAS
tRP
tRCD
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
/CS
/RAS
/CAS
/WE
BA
A10
tIS tIH
Address
tDQSS
DQS
(input)
tDQSL
tWPST
tDQSH
tDH
tDS
tDS
DM
tDS
tDH
DQ (input)
tWR
tDH
Bank 0
Active
Bank 0
Write
Bank 0
Precharge
Preliminary Data Sheet E0237E30 (Ver. 3.0)
43
CL = 2
BL = 4
Bank0 Access
= VIH or VIL
EDD5104ABTA, EDD5108ABTA
Mode Register Set Cycle
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
/CK
CK
CKE
VIH
/CS
/RAS
/CAS
/WE
BA
code
Address
C: b
R: b
code
valid
DM
High-Z
DQS
High-Z
b
DQ (output)
tMRD
tRP
Mode
register
set
;
;;
Precharge
If needed
Bank 3
Read
Bank 3
Active
Bank 3
Precharge
CL = 2
BL = 4
= VIH or VIL
;;
;
;
;
Read/Write Cycle
/CK
CK
CKE
0
1
2
3
4
C:a
R:b
5
6
7
8
9
10
11
12
13
14
15
VIH
/CS
/RAS
/CAS
/WE
BA
Address
R:a
C:b''
C:b
DM
DQS
DQ (output)
a
b’’
High-Z
DQ (input)
Bank 0
Active
b
tRWD
tWRD
Bank 0 Bank 3
Read Active
Bank 3
Write
Preliminary Data Sheet E0237E30 (Ver. 3.0)
44
Bank 3
Read
Read cycle
CL = 2
BL = 4
=VIH or VIL
;;;;;
;
;
;
;
;
;
;;;
EDD5104ABTA, EDD5108ABTA
;;;;;;;;;
;
;
;
;
;;;;;;;;;
;
;
;
;;
Auto Refresh Cycle
/CK
CK
CKE
VIH
/CS
/RAS
/CAS
/WE
BA
Address
A10=1
R: b
C: b
DM
DQS
b
DQ (output)
High-Z
DQ (input)
tRP
Precharge
If needed
tRFC
Auto
Refresh
Bank 0
Active
Bank 0
Read
CL = 2
BL = 4
= VIH or VIL
Preliminary Data Sheet E0237E30 (Ver. 3.0)
45
EDD5104ABTA, EDD5108ABTA
Self Refresh Cycle
/CK
CK
tIS
tIH
CKE
CKE = low
/CS
/RAS
/CAS
/WE
BA
Address
A10=1
R: b
C: b
DM
DQS
DQ (output)
High-Z
DQ (input)
tSNR
tRP
tSRD
Precharge
If needed
Self
refresh
entry
Self refresh
exit
Bank 0
Active
Bank 0
Read
CL = 2.5
BL = 4
= VIH or VIL
Preliminary Data Sheet E0237E30 (Ver. 3.0)
46
EDD5104ABTA, EDD5108ABTA
Package Drawing
66-pin Plastic TSOP (II) 10.16mm(400)
Unit: mm
22.22 ± 0.10 *1
A
11.76 ± 0.20
34
10.16
66
PIN#1 ID
1
0.65
0.17 to 0.32
33
B
0.13 M S A B
0.80
Nom
0.91 max.
0.25
0.10 +0.08
−0.05
0.10 S
0.09 to 0.20
S
1.20 max
1.0 ± 0.05
0 to 8°
0.60 ± 0.15
Note: This dimension does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or
gate burrs shall not exceed 0.20mm per side.
ECA-TS2-0029-01
Preliminary Data Sheet E0237E30 (Ver. 3.0)
47
EDD5104ABTA, EDD5108ABTA
Recommended Soldering Conditions
Please consult with our sales offices for soldering conditions of the EDD51XXABTA.
Type of Surface Mount Device
EDD51XXABTA: 66-pin Plastic TSOP (II) 10.16mm(400)
Preliminary Data Sheet E0237E30 (Ver. 3.0)
48
EDD5104ABTA, EDD5108ABTA
NOTES FOR CMOS DEVICES
1
PRECAUTION AGAINST ESD FOR MOS DEVICES
Exposing the MOS devices to a strong electric field can cause destruction of the gate
oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop
generation of static electricity as much as possible, and quickly dissipate it, when once
it has occurred. Environmental control must be adequate. When it is dry, humidifier
should be used. It is recommended to avoid using insulators that easily build static
electricity. MOS devices must be stored and transported in an anti-static container,
static shielding bag or conductive material. All test and measurement tools including
work bench and floor should be grounded. The operator should be grounded using
wrist strap. MOS devices must not be touched with bare hands. Similar precautions
need to be taken for PW boards with semiconductor MOS devices on it.
2
HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES
No connection for CMOS devices input pins can be a cause of malfunction. If no
connection is provided to the input pins, it is possible that an internal input level may be
generated due to noise, etc., hence causing malfunction. CMOS devices behave
differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed
high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected
to VDD or GND with a resistor, if it is considered to have a possibility of being an output
pin. The unused pins must be handled in accordance with the related specifications.
3
STATUS BEFORE INITIALIZATION OF MOS DEVICES
Power-on does not necessarily define initial status of MOS devices. Production process
of MOS does not define the initial operation status of the device. Immediately after the
power source is turned ON, the MOS devices with reset function have not yet been
initialized. Hence, power-on does not guarantee output pin levels, I/O settings or
contents of registers. MOS devices are not initialized until the reset signal is received.
Reset operation must be executed immediately after power-on for MOS devices having
reset function.
CME0107
Preliminary Data Sheet E0237E30 (Ver. 3.0)
49
EDD5104ABTA, EDD5108ABTA
The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of Elpida Memory, Inc.
Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights
(including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or
third parties by or arising from the use of the products or information listed in this document. No license,
express, implied or otherwise, is granted under any patents, copyrights or other intellectual property
rights of Elpida Memory, Inc. or others.
Descriptions of circuits, software and other related information in this document are provided for
illustrative purposes in semiconductor product operation and application examples. The incorporation of
these circuits, software and information in the design of the customer's equipment shall be done under
the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses
incurred by customers or third parties arising from the use of these circuits, software and information.
[Product applications]
Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability.
However, users are instructed to contact Elpida Memory's sales office before using the product in
aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment,
medical equipment for life support, or other such application in which especially high quality and
reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury.
[Product usage]
Design your application so that the product is used within the ranges and conditions guaranteed by
Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation
characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no
responsibility for failure or damage when the product is used beyond the guaranteed ranges and
conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure
rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so
that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other
consequential damage due to the operation of the Elpida Memory, Inc. product.
[Usage environment]
This product is not designed to be resistant to electromagnetic waves or radiation. This product must be
used in a non-condensing environment.
If you export the products or technology described in this document that are controlled by the Foreign
Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance
with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by
U.S. export control regulations, or another country's export control laws or regulations, you must follow
the necessary procedures in accordance with such laws or regulations.
If these products/technology are sold, leased, or transferred to a third party, or a third party is granted
license to use these products, that third party must be made aware that they are responsible for
compliance with the relevant laws and regulations.
M01E0107
Preliminary Data Sheet E0237E30 (Ver. 3.0)
50