PRELIMINARY DATA SHEET 128M bits DDR Mobile RAM EDK1216CFBJ (8M words × 16 bits) Specifications Pin Configurations • Density: 128M bits • Organization 2M words × 16 bits × 4 banks • Package: 60-ball FBGA Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.7V to 1.95V • Clock frequency: 133MHz (max.) • 1KB page size Row address: A0 to A11 Column address: A0 to A8 • Four internal banks for concurrent operation • Interface: LVCMOS • Burst lengths (BL): 2, 4, 8, 16 • Burst type (BT): Sequential (2, 4, 8, 16) Interleave (2, 4, 8, 16) • /CAS Latency (CL): 3 • Precharge: auto precharge option for each burst access • Driver strength: normal, 1/2, 1/4, 1/8 • Refresh: auto-refresh, self-refresh • Refresh cycles: 4096 cycles/64ms Average refresh period: 15.6µs • Operating ambient temperature range TA =−25°C to +85°C /xxx indicates active low signal. Features • Low power consumption • Partial Array Self-Refresh (PASR) • Auto Temperature Compensated Self-Refresh (ATCSR) by built-in temperature sensor • Double-data-rate architecture; two data transfers per one clock cycle • Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver. • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • Commands entered on each positive CK edge: data and data mask referenced to both edges of DQS • Burst termination by burst stop command and Precharge command 60-ball FBGA 1 2 3 VSS DQ15 VDDQ 4 5 6 7 8 9 10 VSSQ VDDQ DQ0 VDD DQ13 DQ14 DQ1 DQ2 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ DQ8 DQ7 LDQS VDDQ A B C D E VSSQ UDQS F VSS UDM NC NC LDM VDD CKE CK /CK /WE /CAS /RAS A9 A11 NC /CS BA0 BA1 A6 A7 A8 A10 A0 A1 VSS A4 A5 A2 A3 VDD G H J K (Top View) A0 to A11 BA0, BA1 DQ0 to DQ15 UDQS, LDQS /CS /RAS /CAS /WE UDM, LDM CK /CK CKE VDD VSS VDDQ VSSQ NC Address input Bank select address Data-input/output Input and output data strobe Chip select Row address strobe Column address strobe Write enable Write data mask Clock input Differential clock input Clock enable Power for internal circuit Ground for internal circuit Power for DQ circuit Ground for DQ circuit No connection Document No. E1194E20 (Ver. 2.0) Date Published October 2009 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2007-2009 EDK1216CFBJ Ordering Information Part number Organization (words × bits) Internal banks Clock frequency Data rate MHz (max.) Mbps (max.) /CAS latency Package EDK1216CFBJ-75-F 8M × 16 4 133 3 60-ball FBGA 266 Part Number E D K 12 16 C F BJ - 75 - F Elpida Memory Environment Code F: Lead Free (RoHS compliant) and Halogen Free Type D: Monolithic Device Speed 75: 133MHz Product Family K: DDR Mobile RAM Density/Page size 12: 128Mb/1KB Package BJ: FBGA Organization 16: x16 Power Supply, Interface C: VDD = 1.8V, VDDQ = 1.8V, LVCMOS Die Rev. Preliminary Data Sheet E1194E20 (Ver. 2.0) 2 EDK1216CFBJ CONTENTS Specifications.................................................................................................................................................1 Features.........................................................................................................................................................1 Pin Configurations .........................................................................................................................................1 Ordering Information......................................................................................................................................2 Part Number ..................................................................................................................................................2 Electrical Specifications.................................................................................................................................4 Block Diagram .............................................................................................................................................10 Pin Function.................................................................................................................................................11 Command Operation ...................................................................................................................................13 Simplified State Diagram .............................................................................................................................19 Operation of the DDR Mobile RAM .............................................................................................................20 Timing Waveforms.......................................................................................................................................44 Package Drawing ........................................................................................................................................53 Recommended Soldering Conditions..........................................................................................................54 Preliminary Data Sheet E1194E20 (Ver. 2.0) 3 EDK1216CFBJ Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on any pin relative to VSS VT –0.5 to +2.45 V Supply voltage relative to VSS VDD –0.5 to +2.45 V Short circuit output current IOS 50 mA Power dissipation PD 1.0 W Operating ambient temperature TA –25 to +85 °C Storage temperature Tstg –55 to +125 °C Note Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = −25°C to +85°C) Parameter Pins min. typ. max. Unit 1.70 1.8 1.95 V 0 0 0 V VIN (DC) –0.3 — VDDQ + 0.3 V VIX 0.4 × VDDQ 0.5 × VDDQ 0.6 × VDDQ V 5 VDD, VDDQ VSS, VSSQ Supply voltage DC input voltage level Symbol CK, /CK AC Input differential cross point voltage Notes DC input differential voltage VID (DC) 0.4 × VDDQ — VDDQ + 0.6 V 4 AC input differential voltage VID (AC) 0.6 × VDDQ — VDDQ + 0.6 V 4 VIHD (DC) 0.7× VDDQ — VDDQ + 0.3 V 1, 2 DC input high voltage DC input low voltage AC input high voltage AC input low voltage DQ, DM, DQS, address, bank select address, command signals VILD (DC) –0.3 — 0.3 × VDDQ V VIHD (AC) 0.8× VDDQ — VDDQ + 0.3 V VILD (AC) –0.3 — 0.2 × VDDQ V VIH (max.) = 2.45V (pulse width ≤ 5ns). VIL (min.) = –0.5V (pulse width ≤ 5ns). All voltage referred to VSS and VSSQ must be same potential. VID (DC) and VID (AC) are the magnitude of the difference between the input level on CK and the input level on /CK. 5. The value of VIX is expected to be 0.5 × VDDQ and must track variations in the DC level of the same. Notes: 1. 2. 3. 4. Preliminary Data Sheet E1194E20 (Ver. 2.0) 4 EDK1216CFBJ DC Characteristics 1 (TA = –25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V) Parameter Symbol Grade max. Unit Test condition Notes Operating current IDD0 40 mA tRC ≥ tRC (min.), CKE ≥ VIH (min.), tCK = tCK (min.) Address and Command input signals are changed one time during 2tCK. Data input signals are stable Standby current in power down IDD2P 0.8 mA CKE ≤ VIL (max.), tCK = tCK (min.) Standby current in power down (input signal stable) IDD2PS 0.6 mA CKE ≤ VIL (max.), tCK = ∞ Standby current in non power down IDD2N 4.0 mA CKE ≥ VIH (min.), tCK = tCK (min.), /CS ≥ VIH (min.), Input signals are changed one time during 2tCK. Standby current in non power down IDD2NS (input signal stable) 2.0 mA CKE ≥ VIH (min.), tCK = ∞, Address and Command Input signals are stable. DQ and DQS are Don't care. Active standby current in power down IDD3P 3.0 mA CKE ≤ VIL (max.), tCK = tCK (min.) Active standby current in power down (input signal stable) IDD3PS 2.0 mA CKE ≤ VIL (max.), tCK = ∞ Active standby current in non power IDD3N down 10 mA CKE ≥ VIH (min.), tCK = tCK (min.), /CS ≥ VIH (min.), Input signals are changed one time during 2tCK. Active standby current in non power IDD3NS down (input signal stable) 7.0 mA CKE ≥ VIH (min.), tCK = ∞, Address and Command Input signals are stable. DQ and DQS are Don't care. Burst operating current IDD4 80 mA Burst length = 4, tCK ≥ tCK (min.), IOUT = 0mA, One bank active, 50 % data changing each burst 1 Refresh current IDD5 70 mA tRFC ≥ tRFC (min.) 2 Advanced Data Retention Current (TA = –25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V) Parameter Symbol Advanced data retention current (Self-refresh current) PASR="000" (Full) IDD6 Grade typ. max. Unit Condition — 140 µA −25°C ≤ TA ≤ +45°C PASR="001" (2BK) — 120 µA CKE ≤ 0.2V PASR="010" (1BK) — 110 µA — 210 µA +45°C < TA ≤ +85°C PASR="001" (2BK) — 160 µA CKE ≤ 0.2V PASR="010" (1BK) — 140 µA PASR="000" (Full) IDD6 Preliminary Data Sheet E1194E20 (Ver. 2.0) 5 Notes EDK1216CFBJ Notes: 1. IDD4 depends on output loading and cycle rates. Specified values are obtained with the output open. In addition to this, IDD4 is measured on condition that addresses are changed only one time during tCK (min.). 2. IDD5 is measured on condition that addresses are changed only one time during tCK (min.). DC Characteristics 2 (TA = −25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V) Parameter Symbol min. max. Unit Test condition Input leakage current ILI –2.0 2.0 µA 0 ≤ VIN ≤ VDDQ Notes Output leakage current ILO –1.5 1.5 µA 0 ≤ VOUT ≤ VDDQ, DQ = disable Output high voltage VOH 0.9 × VDDQ — V IOH = − 0.1mA Output low voltage VOL — 0.1 × VDDQ V IOL = 0.1 mA Pin Capacitance (TA = +25°C, VDD and VDDQ = 1.7V to 1.95V) Parameter Symbol Pins min. typ. max. Unit Notes Input capacitance CI1 CK, /CK 1.5 — 3.5 pF 1 CI2 All other input-only pins 1.5 — 3.0 pF 1 Delta input capacitance Cdi1 CK, /CK — — 0.25 pF 1 Cdi2 All other input-only pins — — 0.5 pF 1 Input/output capacitance CI/O DQ, DM, DQS 2.0 — 4.5 pF 1, 2 Delta input/output capacitance Cdio DQ, DM, DQS — — 0.5 pF 1 f = 100MHz, VOUT = VDDQ/2, ∆VOUT = 0.2V, Notes: 1. These parameters are measured on conditions: TA = +25°C. 2. DOUT circuits are disabled. AC Characteristics (TA = −25°C to +85°C, VDD and VDDQ = 1.7V to 1.95V, VSS and VSSQ = 0V) Parameter Symbol min. max. Unit Clock cycle time tCK 7.5 100 ns CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK CK half period tHP min. ( tCH, tCL) — tCK DQ output access time from CK, /CK tAC 2.5 6.0 ns DQS-in cycle time tDSC 0.9 1.1 tCK Notes 2, 8 DQS output access time from CK, /CK tDQSCK 2.5 6.0 ns 2, 8 DQ-out high-impedance time from CK, /CK tHZ — 6.0 ns 5, 8 DQ-out low-impedance time from CK, /CK tLZ 1.0 — ns 6, 8 DQS to DQ skew tDQSQ — 0.6 ns 3 DQ/DQS output hold time from DQS tQH tHP − tQHS — ns 4 Data hold skew factor tQHS — 0.75 ns DQ and DM input setup time tDS 0.8 — ns 3 DQ and DM input hold time tDH 0.8 — ns 3 DQ and DM input pulse width tDIPW 1.8 — ns Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK Write preamble setup time tWPRES 0 — ns Write preamble tWPRE 0.25 — tCK Write postamble tWPST 0.4 0.6 tCK Preliminary Data Sheet E1194E20 (Ver. 2.0) 6 7 EDK1216CFBJ Parameter Symbol min. max. Unit Write command to first DQS latching transition tDQSS 0.75 1.25 tCK Notes DQS falling edge to CK setup time tDSS 0.2 — tCK DQS falling edge hold time from CK tDSH 0.2 — tCK DQS input high pulse width tDQSH 0.4 0.6 tCK DQS input low pulse width tDQSL 0.4 0.6 tCK Address and control input setup time tIS 1.3 — ns 3 Address and control input hold time tIH 1.3 — ns 3 3 Address and control input pulse width tIPW 2.6 — ns Mode register set command cycle time tMRD 2 — tCK Active to Precharge command period tRAS 45 120000 ns Active to Active/Auto refresh command period tRC 75 — ns Auto refresh to Active/Auto refresh command period tRFC 97.5 — ns Active to Read/Write delay tRCD 22.5 — ns Precharge to active command period tRP 22.5 — ns Active to active command period tRRD 15 — ns Column address to column address delay tCCD 1 tCK ns Write recovery time tWR 15 — Autoprecharge write recovery and precharge time tDAL — — Self-Refresh Exit Period tSREX 120 — ns Internal Write to Read command delay tWTR 1 — tCK Refresh period tREF — 64 ms 9 Notes: 1. On all AC measurements, we assume the test conditions shown in “Test conditions” and full driver strength is assumed for the output load, that is both A6 and A5 of EMRS is set to be “L”. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VDDQ/2. 3. The timing reference level is VDDQ/2. 4. Output valid window is defined to be the period between two successive transition of data out signals. The signal transition is defined to occur when the signal level crossing VDDQ/2. 5. tHZ is defined as DOUT transition delay from low-Z to high-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from high-Z to low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. The transition from low-Z to high-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 8. tAC, tDQSCK, tHZ and tLZ are specified with 20pF bus loading condition. 9. Minimum 3 clocks of tDAL (= tWR + tRP) is required because it need minimum 2 clocks for tWR and minimum 1 clock for tRP. tDAL = (tWR/tCK) + (tRP/tCK): for each of the terms above, if not already an integer, round to the next higher integer. Preliminary Data Sheet E1194E20 (Ver. 2.0) 7 EDK1216CFBJ Test Conditions Parameter Symbol Value Unit Note Input high voltage VIH (AC) 0.8 × VDDQ V 1 Input low voltage VIL (AC) 0.2 × VDDQ V 1 Input differential voltage, CK and /CK inputs VID (AC) 1.4 V 1 Input differential cross point voltage, CK and /CK inputs VIX (AC) VDDQ/2 with VDD=VDDQ V Input signal slew rate SLEW 1 V/ns Output load CL 20 pF 1 Note: 1. VDD = VDDQ tCK tCH tCL /CK VIH VID VIX CK VIL tLZ tAC T slew rate = DQOUT Q1 Q2 VDDQ/2 (DQOUT) Test Condition (Wave form and Timing Reference) DQ CL Output Load Preliminary Data Sheet E1194E20 (Ver. 2.0) 8 (VIH − VIL) T EDK1216CFBJ Timing Parameter Measured in Clock Cycle Number of clock cycle tCK 7.5ns Parameter Symbol min. max. Unit Write to pre-charge command delay (same bank) tWPD 3 + BL/2 tCK Read to pre-charge command delay (same bank) tRPD BL/2 tCK Write to read command delay (to input all data) tWRD 2 + BL/2 tCK tBSTW 3 tCK tBSTZ 3 tCK tRWD 3 + BL/2 tCK tHZP 3 tCK Write command to data in latency tWCD 1 tCK Write recovery tWR 2 tCK DM to data in latency tDMD 0 tCK Mode register set command cycle time tMRD 2 tCK Burst stop command to write command delay (CL = 3) Burst stop command to DQ high-Z (CL = 3) Read command to write command delay (to output all data) (CL = 3) Pre-charge command to high-Z (CL = 3) Notes Self-refresh exit to non-column command tSREX 16 tCK Auto refresh period tRFC 13 tCK Power down entry tPDEN 2 tCK 1 Power down exit to command input tPDEX 1 tCK 2 CKE minimum pulse width tCKE 1 tCK 2 Notes: 1. The device will be into power down mode at the second CK rising edge after CKE to be low level with NOP or DESL command. 2. If PDEN command is issued but CKE stay in low level just for one clock (=tCKE min.) then CKE return to high level, the device will not be into power down mode. Preliminary Data Sheet E1194E20 (Ver. 2.0) 9 EDK1216CFBJ Clock generator Block Diagram Bank 3 Bank 2 Bank 1 Address, BA0, BA1 Mode register Row address buffer and refresh counter Row decoder CK /CK CKE Memory cell array Bank 0 Control logic /CS /RAS /CAS /WE Command decoder Sense amp. Column address buffer and burst counter Column decoder Data control circuit Latch circuit Input & Output buffer DQ Preliminary Data Sheet E1194E20 (Ver. 2.0) 10 DQS DM EDK1216CFBJ Pin Function CK, /CK (input pins) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the /CK falling edge. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VDDQ/2 level. DQSs for write operation are referred to the cross point of the CK and the /CK. The other input signals are referred at CK rising edge. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A11 (input pins) Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of the CK rising edge and the /CK falling edge in a bank active command cycle. Column address is loaded at the cross point of the CK rising edge and the /CK falling edge in a read or a write command cycle (See “Address Pins Table”). This column address becomes the starting address of a burst operation. [Address Pins Table] Address (A0 to A11) Part number Organization Row address Column address EDK1216CFBJ × 16 bits AX0 to AX11 AY0 to AY8 A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. BA0 and BA1 (input pins) BA0 and BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE (input pin) CKE controls power down mode, self-refresh function with other command inputs. The CKE minimum pulse width should be 1 tCK. Preliminary Data Sheet E1194E20 (Ver. 2.0) 11 EDK1216CFBJ DQ0 to DQ15 (input/output pins) Data are input to and output from these pins. UDQS and LDQS (input and output pin): DQS provides the read data strobes (as output) and the write data strobes (as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). UDM and LDM (input pin) DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VDDQ/2. When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up. Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). [DQS and DM Correspondence Table] Part number Organization DQS Data mask DQs EDK1216CFBJ × 16 bits LDQS LDM DQ0 to DQ7 UDQS UDM DQ8 to DQ15 VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers. VDD and VDDQ must have same voltage range (1.7V to 1.95V). Preliminary Data Sheet E1194E20 (Ver. 2.0) 12 EDK1216CFBJ Command Operation Command Truth Table The DDR Mobile RAM recognizes the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. CKE Command Symbol n–1 n /CS /RAS /CAS /WE BA1 BA0 AP Address Ignore command DESL H H H × × × × × × × No operation NOP H H L H H H × × × × Burst stop command BST H H L H H L × × × × Column address and read command READ H H L H L H V V L V Read with auto-precharge READA H H L H L H V V H V Column address and write command WRIT H H L H L L V V L V Write with auto-precharge WRITA H H L H L L V V H V Row address strobe and bank active ACT H H L L H H V V V V Precharge select bank PRE H H L L H L V V L × Precharge all bank PALL H H L L H L × × H × Refresh REF H H L L L H × × × × SELF H L L L L H × × × × MRS H H L L L L L L L V EMRS H H L L L L H L L V Mode register set Remark: H: VIH. L: VIL. ×: Don’t Care V: Valid address input Note: The CKE level must be kept for 1 CK cycle at least. Ignore command [DESL] When /CS is high at the cross point of the CK rising edge and the VDDQ/2 level, all input signals are neglected and internal state is held. No operation [NOP] As long as this command is input at the cross point of the CK rising edge and the VDDQ/2 level, address and data input are neglected and internal state is held. Burst stop command [BST] This command stops a current burst operation. Column address strobe and read command [READ] This command starts a read operation. The start address of the burst read is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation, all output buffers become high-Z. Read with auto-precharge [READA] This command starts a read operation. After completion of the read operation, precharge is automatically executed. Column address strobe and write command [WRIT] This command starts a write operation. The start address of the burst write is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. Write with auto-precharge [WRITA] This command starts a write operation. After completion of the write operation, precharge is automatically executed. Preliminary Data Sheet E1194E20 (Ver. 2.0) 13 EDK1216CFBJ Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0 and BA1 and determines the row address (AX0 to AX12). (See Bank Select Signal Table) Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0 and BA1. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another is self-refresh. For details, refer to the CKE truth table section. Mode register set/Extended mode register set [MRS/EMRS] The DDR Mobile RAM has the two mode registers, the mode register and the extended mode register, to defines how it works. The both mode registers are set through the address pins (the A0 to the A11, BA0 to BA1) in the mode register set cycle. For details, refer to "Mode register and extended mode register set". Preliminary Data Sheet E1194E20 (Ver. 2.0) 14 EDK1216CFBJ Function Truth Table The following tables show the operations that are performed when each command is issued in each state of the DDR Mobile RAM. Current state Precharging* Idle* 1 2 Refresh 3 (auto-refresh)* Activating* Active* 5 4 /CS /RAS /CAS /WE Address Command Operation H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL* 11 L H L H BA, CA, A10 READ/READA ILLEGAL* 11 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL* 11 L L H H BA, RA ACT ILLEGAL* 11 PRE, PALL NOP L L H L BA, A10 L L L × × H × × × × DESL L H H H × NOP NOP L H H L × BST NOP L H L H BA, CA, A10 READ/READA ILLEGAL* 11 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL* 11 L L H H BA, RA ACT Activating L L H L BA, A10 PRE, PALL NOP L L L H × REF, SELF Refresh/ 12 Self-refresh* L L L L MODE MRS Mode register set* H × × × × DESL NOP L H H H × NOP NOP BST ILLEGAL ILLEGAL NOP 12 H H H L × L H L × × ILLEGAL L L × × × ILLEGAL H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL* 11 L H L H BA, CA, A10 READ/READA ILLEGAL* 11 L H L L BA, CA, A10 WRIT/WRITA ILLEGAL* 11 L L H H BA, RA ACT ILLEGAL* 11 L L H L BA, A10 PRE, PALL ILLEGAL* 11 L L L × × H × × × × DESL L H H H × NOP NOP L H H L × BST NOP L H L H BA, CA, A10 READ/READA Starting read operation ILLEGAL NOP L H L L BA, CA, A10 WRIT/WRITA Starting write operation L L H H BA, RA ACT ILLEGAL* L L H L BA, A10 PRE, PALL Pre-charge L L L × × ILLEGAL Preliminary Data Sheet E1194E20 (Ver. 2.0) 15 11 EDK1216CFBJ Current state Read* 6 Read with auto-pre7 charge* Write* 8 Write recovering* 9 /CS /RAS /CAS /WE Address Command Operation H × × × × DESL NOP L H H H × NOP NOP L H H L × BST Burst stop L H L H BA, CA, A10 READ/READA Interrupting burst read operation to start new read L H L L BA, CA, A10 WRIT/WRITA ILLEGAL* 13 L L H H BA, RA ACT ILLEGAL* 11 L L H L BA, A10 PRE, PALL Interrupting burst read operation to start precharge L L L × × H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL L H L L BA, CA, A10 WRIT/WRITA ILLEGAL L L H H BA, RA ACT ILLEGAL* 11 L L H L BA, A10 PRE, PALL ILLEGAL* 11 L L L × × H × × × × DESL L H H H × NOP NOP L H H L × BST Burst Stop L H L H BA, CA, A10 READ/READA L H L L BA, CA, A10 WRIT/WRITA L L H H BA, RA ACT ILLEGAL* L L H L BA, A10 PRE, PALL Interrupting write operation to start pre-charge. L L L × × H × × × × DESL L H H H × NOP NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA Starting read operation. L H L L BA, CA, A10 WRIT/WRITA Starting new write operation. L L H H BA, RA ACT ILLEGAL* 11 L L H L BA, A10 PRE/PALL ILLEGAL* 11 L L L × × ILLEGAL NOP Interrupting burst write operation to start read operation. Interrupting burst write operation to start new write operation. 11 ILLEGAL NOP ILLEGAL Preliminary Data Sheet E1194E20 (Ver. 2.0) 16 EDK1216CFBJ Current state /CS /RAS /CAS /WE Address Command Operation Write with auto- pre10 charge* H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL L H L H BA, CA, A10 READ/READA ILLEGAL L H L L BA, CA, A10 WRIT/WRIT A ILLEGAL L L H H BA, RA ACT ILLEGAL* 11 L L H L BA, A10 PRE, PALL ILLEGAL* 11 L L L × × ILLEGAL H: VIH. L: VIL. ×: Don’t Care The DDR Mobile RAM is in "Precharging" state for tRP after precharge command is issued. The DDR Mobile RAM reaches "IDLE" state tRP after precharge command is issued. The DDR Mobile RAM is in "Refresh" state for tRFC after auto-refresh command is issued. The DDR Mobile RAM is in "Activating" state for tRCD after ACT command is issued. The DDR Mobile RAM is in "Active" state after "Activating" is completed. The DDR Mobile RAM is in "READ" state until burst data have been output and DQ output circuits are turned off. 7. The DDR Mobile RAM is in "READ with auto-precharge" from READA command until burst data has been output and DQ output circuits are turned off. 8. The DDR Mobile RAM is in "WRITE" state from WRIT command to the last burst data are input. 9. The DDR Mobile RAM is in "Write recovering" for tWR after the last data are input. 10. The DDR Mobile RAM is in "Write with auto-precharge" until tWR after the last data has been input. 11. This command may be issued for other banks, depending on the state of the banks. 12. All banks must be in "IDLE". 13. Before executing a write command to stop the preceding burst read operation, BST command must be issued. Remark: Notes: 1. 2. 3. 4. 5. 6. Preliminary Data Sheet E1194E20 (Ver. 2.0) 17 EDK1216CFBJ CKE Truth Table CKE Current state Command n–1 n /CS /RAS /CAS /WE Address Notes Idle Auto-refresh command (REF) H H L L L H × 2 Idle Self-refresh entry (SELF) H L L L L H × 2 Idle/Active Power down entry (PDEN) Self refresh Self refresh exit (SELFX) Power down Power down exit (PDEX) H L L H H H × H L H × × × × L H L H H H × L H H × × × × L H L H H H × L H H × × × × Notes: 1. H: VIH . L: VIL × : Don’t Care . 2. All the banks must be in IDLE before executing this command. 3. The CKE level must be kept for 1 clock cycle at least. Auto-refresh command [REF] This command executes auto-refresh. The bank and the ROW addresses to be refreshed are internally determined by the internal refresh controller. The output buffer becomes high-Z after auto-refresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can be issued tRFC after the last autorefresh command. The average refresh cycle is 15.6µs. To allow for improved efficiency in scheduling, some flexibility in the absolute refresh interval (64ms) is provided. A maximum of eight auto-refresh commands can be posted to the DDR Mobile RAM or the maximum absolute interval between any auto-refresh command and the next auto-refresh command is 8 × tREF. Self-refresh entry [SELF] This command starts self-refresh. The self-refresh operation continues as long as CKE is held low. During the selfrefresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is terminated by a self-refresh exit command. Power down mode entry [PDEN] tPDEN (= 2 clocks) after the cycle when [PDEN] is issued, the DDR Mobile RAM enters into power-down mode. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held low. No internal refresh operation occurs during the power down mode. Self-refresh exit [SELFX] This command is executed to exit from self-refresh mode. tSREX after [SELFX], the device will be into idle state. Power down exit [PDEX] The DDR Mobile RAM can exit from power down mode tPDEX (1 cycle min.) after the cycle when [PDEX] is issued. Preliminary Data Sheet E1194E20 (Ver. 2.0) 18 EDK1216CFBJ Simplified State Diagram SELF REFRESH EXTENDED MODE REGISTER SET SR ENTRY EM RS SR EXIT MRS MODE REGISTER SET REFRESH IDLE AUTO REFRESH CKE CKE_ IDLE POWER DOWN ACTIVE POWER DOWN ACTIVE CKE_ CKE ROW ACTIVE BST BST READ WRITE WRITE WRITE WITH AP WRITE READ WITH AP READ READ READ WITH AP WRITE WITH AP READ READ WITH AP PRECHARGE WRITEA READA PRECHARGE POWER APPLIED POWER ON PRECHARGE PRECHARGE PRECHARGE Automatic sequence Manual input Preliminary Data Sheet E1194E20 (Ver. 2.0) 19 EDK1216CFBJ Operation of the DDR Mobile RAM Initialization The DDR Mobile RAM is initialized in the power-on sequence according to the following. (1) To stabilize internal circuits, when power is applied, a 200µs or longer pause must precede any signal toggling. VDD should be turned on simultaneously or before VDDQ. (2) After the pause, all banks must be precharged using the Precharge command (The Precharge all banks command is convenient). (3) Once the precharge is completed and the minimum tRP is satisfied, two or more Auto refresh must be performed. (4) The mode register must be programmed and the extended mode register should be programmed. After the mode register set cycle or the extended mode register set cycle, tMRD (2 clocks minimum) pause must be satisfied. Remarks: 1 The sequence of Auto refresh, mode register programming and extended mode register programming above may be transposed. 2 CKE must be held high until the Precharge command is issued to ensure data-bus high-Z. Mode Register and Extended Mode Register Set There are two mode registers, the mode register and the extended mode register so as to define the operating mode. Parameters are set to both through the A0 to the A11 and BA0 and BA1 pins by the mode register set command [MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are set by inputting signal via the A0 to the A11 and BA0 and BA1 pins during mode register set cycles. BA0 and BA1 determine which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode register must be set. Mode register The mode register has four fields; Reserved /CAS latency Wrap type Burst length : A11 through A7 : A6 through A4 : A3 : A2 through A0 Following mode register programming, no command can be issued before at least 2 clocks have elapsed. /CAS Latency /CAS latency must be set to 3. Burst Length Burst Length is the number of words that will be output or input in a read or write cycle. After a read burst is completed, the output bus will become high-Z. The burst length is programmable as 2, 4, 8 and 16. Wrap Type (Burst Sequence) The wrap type specifies the order in which the burst data will be addressed. This order is programmable as either “Sequential” or “Interleave”. “Burst Operation” shows the addressing sequence for each burst length for each wrap type. Preliminary Data Sheet E1194E20 (Ver. 2.0) 20 EDK1216CFBJ Extended Mode Register The extended mode register has three fields; Reserved Driver Strength Partial Array Self Refresh : A11 through A7, A4, A3 : A6 through A5 : A2 through A0 Following extended mode register programming, no command can be issued before at least 2 clocks have elapsed. Note: EMRS has default value at power up. [A9 : A0] = [00 0000 0000]. Driver Strength By setting specific parameter on A6 and A5, driving capability of data output drivers is selected. Advanced Temperature Compensated Self Refresh (ATCSR) The DDR Mobile RAM automatically changes the self-refresh cycle by on die temperature sensor. No extended mode register program is required. Manual TCSR (Temperature Compensated Self-Refresh) is not implemented. Partial Array Self Refresh Memory array size to be refreshed during self-refresh operation is programmable in order to reduce power. Data outside the defined area will not be retained during self-refresh. Preliminary Data Sheet E1194E20 (Ver. 2.0) 21 EDK1216CFBJ Power-Down Mode and CKE Control DDR Mobile RAM will be into power-down mode at the second CK rising edge after CKE to be low level with NOP or DESL command at first CK rising edge after CKE signal to be low. CK /CK CKE Command Valid*1 Address Valid*1 NOP Valid*2 NOP NOP Valid*2 Power-down mode Notes: 1. Valid*1 can be either Activate command or Precharge command, When Valid*1 is Activate command, power-down mode will be active power-down mode, while it will be precharge power down mode, if Valid*1 will be Precharge command. 2. Valid*2 can be any command as long as all of specified AC parameters are satisfied. Power-Down Entry and Exit However, if the CKE has one clock cycle high and on clock cycle low just as below, even DDR Mobile RAM will not enter power-down mode, this command flow does not hurt any data and can be done. CK /CK CKE Command PRE NOP NOP ACT Note: Assume PRE and ACT command is closing and activating same bank. CKE Control Preliminary Data Sheet E1194E20 (Ver. 2.0) 22 EDK1216CFBJ Mode Register Definition BA1 BA0 A11 A10 A9 A8 A7 0 0 0 0 0 0 0 Bits6-4 000 001 010 011 100 101 110 111 Latency mode BA1 BA0 A11 A10 1 0 0 0 A6 A4 A3 A2 WT A1 A8 A7 0 0 0 Bits6-5 00 01 10 11 A0 BL /CAS latency R R R 3 R R R R A9 Driver Strength A5 LTMODE Mode Register Set Burst length Wrap type A6 A5 DS A4 A3 0 0 A2 A1 Remark R : Reserved Preliminary Data Sheet E1194E20 (Ver. 2.0) 23 0 1 WT = 0 R 2 4 8 16 R R R WT = 1 R 2 4 8 16 R R R Sequential Interleave A0 PASR Partial Array Self Refresh Strength Normal 1/2 strength 1/4 strength 1/8 strength Bits2-0 000 001 010 011 100 101 110 111 Extended Mode Register Set Bits2-0 000 001 010 011 100 101 110 111 Refresh Array All banks Bank A & Bank B (BA1=0) Bank A (BA0=BA1=0) R R R R R EDK1216CFBJ Burst Operation The burst type (BT) and the first three bits of the column address determine the order of a data out. Burst length = 2 Burst length = 4 Starting Ad. Addressing(decimal) Starting Ad. Addressing(decimal) A1 A0 0 0, 1 0, 1 0 0 0, 1, 2, 3 0, 1, 2, 3 1 1, 0 1, 0 0 1 1, 2, 3, 0 1, 0, 3, 2 1 0 2, 3, 0, 1 2, 3, 0, 1 1 1 3, 0, 1, 2 3, 2, 1, 0 A0 Sequence Interleave Sequence Interleave Burst length = 8 Addressing(decimal) Starting Ad. A2 A1 A0 Sequence 0 0 0 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 0 0 1 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6 0 1 0 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5 0 1 1 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4 1 0 0 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1 0 1 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2 1 1 0 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1 1 1 1 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0 Interleave Burst length = 16 Starting Ad. Addressing(decimal) A3 A2 A1 0 0 0 0 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15 0 0 0 1 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0 1, 0, 3, 2, 5, 4, 7, 6, 9, 8, 11, 10, 13, 12, 15, 14 0 0 1 0 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1 2, 3, 0, 1, 6, 7, 4, 5, 10, 11, 8, 9, 14, 15, 12, 13 0 0 1 1 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4, 11, 10, 9, 8, 15, 14, 13, 12 0 1 0 0 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3, 12, 13, 14, 15, 8, 9, 10, 11 0 1 0 1 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2, 13, 12, 15, 14, 9, 8, 11, 10 0 1 1 0 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1, 14, 15, 12, 13, 10, 11, 8, 9 A0 Sequence Interleave 0 1 1 1 7, 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0, 15, 14, 13, 12, 11, 10, 9, 8 1 0 0 0 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7 8, 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7 1 0 0 1 9, 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8 9, 8, 11, 10, 13, 12, 15, 14, 1, 0, 3, 2, 5, 4, 7, 6 1 0 1 0 10, 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 10, 11, 8, 9, 14, 15, 12, 13, 2, 3, 0, 1, 6, 7, 4, 5 1 0 1 1 11, 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10 11, 10, 9, 8, 15, 14, 13, 12, 3, 2, 1, 0, 7, 6, 5, 4 1 1 0 0 12, 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 12, 13, 14, 15, 8, 9, 10, 11, 4, 5, 6, 7, 0, 1, 2, 3 1 1 0 1 13, 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 13, 12, 15, 14, 9, 8, 11, 10, 5, 4, 7, 6, 1, 0, 3, 2 1 1 1 0 14, 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13 14, 15, 12, 13, 10, 11, 8, 9, 6, 7, 4, 5, 2, 3, 0, 1 1 1 1 1 15, 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 15, 14, 13, 12, 11, 10, 9, 8, 7, 6, 5, 4, 3, 2, 1, 0 Preliminary Data Sheet E1194E20 (Ver. 2.0) 24 ; ;;;; EDK1216CFBJ Read/Write Operations Bank Active A read or a write operation begins with the bank active command [ACT]. The bank active command determines a bank address and a row address. For the bank and the row, a read or a write command can be issued tRCD after the ACT is issued. Read operation The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read command is issued. The burst length (BL) determines the length of a sequential output data by the read command that can be set to 2, 4, 8 or 16. The starting address of the burst read is defined by the column address, the bank select address which is loaded via the A0 to A11 and BA0 and BA1 pins in the cycle when the read command is issued. The data output timing is characterized by CL and tAC. The read burst start (CL-1) × tCK + tAC (ns) after the clock rising edge where the read command is latched. The DDR Mobile RAM outputs the data strobe through DQS pins simultaneously with data. tRPRE prior to the first rising edge of the data strobe, the DQS pins are driven low from high-Z state. This low period of DQS is referred as read preamble. The burst data are output coincidentally at both the rising and falling edge of the data strobe. The DQ pins become high-Z in the next cycle after the burst read operation completed. tRPST from the last falling edge of the data strobe, the DQS pins become high-Z. This low period of DQS is referred as read postamble. CK /CK Command Address tRCD NOP ACT NOP Row READ NOP Column tRPRE out0 out1 BL = 2 DQS DQ tRPST out0 out1 out2 out3 BL = 4 out0 out1 out2 out3 out4 out5 out6 out7 BL = 8 out0 out1 out2 out3 out4 out5 out6 out7 BL = 16 out 14 out 15 CL = 3 BL: Burst length Read Operation (Burst Length) Preliminary Data Sheet E1194E20 (Ver. 2.0) 25 EDK1216CFBJ t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5 CK /CK Command READ NOP tRPRE tRPST VTT DQS tAC,tDQSCK out0 DQ out1 out2 VTT out3 Read Operation (/CAS Latency) Write operation The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued. The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4, 8 or 16. The latency from write command to data input is fixed to 1. The starting address of the burst write is defined by the column address, the bank select address which is loaded via the A0 to A11, BA0 to BA1 pins in the cycle when the write command is issued. DQS should be input as the strobe for the input-data and DM as well during burst operation. tWPRE prior to the first rising edge of DQS, DQS must be set to low. tWPST after the last falling edge of DQS, the DQS pins can be changed to high-Z. The leading low period of DQS is referred as write preamble. The last low period of DQS is referred as write postamble. Example CK /CK Command Address tRCD NOP ACT NOP Row WRIT NOP Column tWPRE tWPRES BL = 2 DQS DQ BL = 4 BL = 8 BL = 16 in0 in1 tWPST in0 in1 in2 in3 in0 in1 in2 in3 in4 in5 in6 in7 in0 in1 in2 in3 in4 in5 in6 in7 in 14 in 15 BL: Burst length Write Operation Preliminary Data Sheet E1194E20 (Ver. 2.0) 26 EDK1216CFBJ Burst Stop Burst stop command during burst operation The burst stop (BST) command stops the burst read and sets all output buffers to high-Z. tBSTZ (= CL) cycles after a BST command issued, all DQ and DQS pins become high-Z. The BST command is also supported for the burst write operation. No data will be written in subsequent cycles. Note that bank address is not referred when this command is executed. t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5 CK /CK Command READ BST NOP tBSTZ DQS out0 DQ out1 CL: /CAS latency Burst Stop during a Read Operation Preliminary Data Sheet E1194E20 (Ver. 2.0) 27 EDK1216CFBJ Auto-Precharge Read with auto-precharge The precharge is automatically performed after completing a read operation. The precharge starts BL/2 (= tRPD) clocks after READA command input. tRAS lock out mechanism for READA allows a read command with auto precharge to be issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge command does not limit row commands execution for other bank. CK /CK tRP (min) tRAS (min) tRCD (min) Command ACT BL/2 (= tRPD) NOP READA ACT DQS tAC,tDQSCK DQ out0 Note: Internal auto-precharge starts at the timing indicated by " out1 out2 out3 ". Read with auto-precharge Write with auto-precharge The precharge is automatically performed after completing a burst write operation. The precharge operation is started (WL) + BL/2 + tWR (= tWPD) clocks after WRITA command issued. A column command to the other banks can be issued the next cycle after the internal precharge command issued. Write with auto-precharge command does not limit row commands execution for other bank. CK /CK tRAS (min) tRP tRCD (min) Command ACT NOP WRITA NOP ACT WL + BL/2 + tWR (= tWPD) DM DQS DQ in1 in2 in3 Note: Internal auto-precharge starts at the timing indicated by " in4 ". Burst Write (BL = 4) Preliminary Data Sheet E1194E20 (Ver. 2.0) 28 BL = 4 EDK1216CFBJ The Concurrent Auto Precharge The DDR Mobile RAM supports the concurrent auto precharge feature, a read with auto-precharge or a write with auto-precharge, can be followed by any command to the other banks, as long as that command does not interrupt the read or write data transfer, and all other related limitations apply (e.g. contention between READ data and WRITE data must be avoided.) The minimum delay from a read or write command with auto precharge, to a command to a different bank, is summarized below. From command To command (different bank, noninterrupting command) Minimum delay (Concurrent AP supported) Units Read w/AP Read or Read w/AP BL/2 tCK Write or Write w/AP CL (rounded up)+ (BL/2) tCK Write w/AP Precharge or Activate 1 tCK Read or Read w/AP 1 + (BL/2) + tWTR tCK Write or Write w/AP BL/2 tCK Precharge or Activate 1 tCK Preliminary Data Sheet E1194E20 (Ver. 2.0) 29 ;;;;;; EDK1216CFBJ Command Intervals A Read command to the consecutive Read command Interval Destination row of the consecutive read command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE IDLE t0 Operation The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank without interrupting the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. tn tn+1 tn+2 tn+3 tn+4 tn+5 tn+6 CK /CK Command ACT Address Row NOP READ NOP READ Column A Column B BA out A0 DQ Column = A Column = B Read Read out A1 Column = A Dout out B0 out out B1 B2 out B3 Column = B Dout DQS Bank0 Active CL = 3 BL = 4 Bank0 READ to READ Command Interval (same ROW address in the same bank)* Note: n ≥ 3 Preliminary Data Sheet E1194E20 (Ver. 2.0) 30 ; ;;; ; EDK1216CFBJ t0 t1 t2 ACT NOP ACT tn tn+1 READ READ tn+2 tn+3 tn+4 tn+5 tn+6 CK /CK Command Address Row0 Row1 NOP NOP Column A Column B BA out out A0 A1 DQ Column = A Column = B Read Read Bank0 Dout out out out out B0 B1 B2 B3 Bank3 Dout DQS Bank0 Active Bank3 Active Bank0 Read Bank3 Read READ to READ Command Interval (different bank)* Note: n ≥ 3 Preliminary Data Sheet E1194E20 (Ver. 2.0) 31 CL = 3 BL = 4 ;;;;; EDK1216CFBJ A Write command to the consecutive Write command Interval Destination row of the consecutive write command Bank address 1. Same 2. Same 3. Different Row address State Operation Same ACTIVE Different — Any ACTIVE The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank to interrupt the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. See ‘A write command to the consecutive precharge interval’ section. The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank without interrupting the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. IDLE t0 CK /CK Command Address BA DQ ACT Row tn NOP WRIT tn+1 tn+2 tn+4 tn+5 tn+6 NOP WRIT Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Column = A Write DQS tn+3 Column = B Write Bank0 Active BL = 4 Bank0 WRITE to WRITE Command Interval (same ROW address in the same bank) Preliminary Data Sheet E1194E20 (Ver. 2.0) 32 ;;; ;;; EDK1216CFBJ CK /CK Command Address BA DQ t0 t1 t2 ACT NOP ACT Row0 Row1 tn NOP WRIT tn+1 tn+3 tn+4 tn+5 NOP WRIT Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Bank0 Write DQS tn+2 Bank0 Active Bank3 Write Bank3 Active BL = 4 Bank0, 3 WRITE to WRITE Command Interval (different bank) Preliminary Data Sheet E1194E20 (Ver. 2.0) 33 EDK1216CFBJ A Read command to the consecutive Write command interval with the BST command Destination row of the consecutive write command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE IDLE t0 t1 READ BST Operation Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. See ‘A read command to the consecutive precharge interval’ section. Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank independently of the preceding read operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive write command can be issued. t2 t3 t4 t5 t6 t7 t8 CK /CK Command NOP WRIT NOP tBSTW (≥ tBSTZ) DM tBSTZ (= CL) DQ out0 out1 in0 in1 in2 in3 High-Z DQS OUTPUT INPUT READ to WRITE Command Interval Preliminary Data Sheet E1194E20 (Ver. 2.0) 34 BL = 4 CL = 3 EDK1216CFBJ A Write command to the consecutive Read command interval: To complete the burst operation Destination row of the consecutive read command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE Operation To complete the burst operation, the consecutive read command should be performed tWRD (= BL/ 2 + 2) after the write command. Precharge the bank tWPD after the preceding write command. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. To complete a burst operation, the consecutive read command should be performed tWRD (= BL/ 2 + 2) after the write command. Precharge the bank independently of the preceding write operation. tRP after the precharge command, issue the ACT command. tRCD after the ACT command, the consecutive read command can be issued. IDLE t0 t1 t2 t3 tn tn + 1 tn + 2 tn + 3 tn + 4 CK /CK Command WRIT NOP READ NOP tWRD (min) tWTR* DM DQ in0 in1 in2 out0 in3 out1 out2 DQS INPUT OUTPUT Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR. WRITE to READ Command Interval Preliminary Data Sheet E1194E20 (Ver. 2.0) 35 BL = 4 CL = 3 EDK1216CFBJ A Write command to the consecutive Read command interval: To interrupt the write operation Destination row of the consecutive read command Bank address Row address State Operation 1. Same Same ACTIVE DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. 2. Same Different — —* 3. Different Any ACTIVE DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. IDLE —* 1 1 Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write operation in this case. WRITE to READ Command Interval (Same bank, same ROW address) t0 t1 WRIT READ t2 t3 t4 t5 t6 t7 t8 CK /CK Command NOP DM DQ in0 in1 in2 out0 out1 out2 out3 High-Z High-Z DQS BL = 4 CL = 3 Data masked [WRITE to READ delay = 1 clock cycle] Preliminary Data Sheet E1194E20 (Ver. 2.0) 36 EDK1216CFBJ t0 t1 t2 WRIT NOP READ t3 t4 t5 t6 t7 t8 CK /CK Command NOP DM DQ in0 in1 in2 in3 High-Z out0 out1 out2 out3 High-Z DQS Data masked BL = 4 CL = 3 [WRITE to READ delay = 2 clock cycle] t0 t1 t2 t3 t4 t5 t6 t7 t8 CK /CK Command WRIT NOP READ NOP tWTR* DM DQ in0 in1 in2 in3 out0 out1 out2 out3 DQS BL = 4 CL = 3 Data masked Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR. [WRITE to READ delay = 3 clock cycle] Preliminary Data Sheet E1194E20 (Ver. 2.0) 37 ;;;;;;;; EDK1216CFBJ A Write command to the Bust stop command interval: To interrupt the write operation WRITE to BST Command Interval (Same bank, same ROW address) t0 t1 WRIT BST t2 t3 t4 t5 t6 t7 CK /CK Command NOP DM DQ in0 in1 DQS BL = 4 or longer Data will be written Following data will not be written. [WRITE to BST delay = 1 clock cycle] t0 t1 t2 WRIT NOP BST t3 t4 t5 t6 t7 CK /CK Command NOP DM DQ in0 in1 in2 in3 DQS Data will be written Following data will not be written. [WRITE to BST delay = 2 clock cycle] Preliminary Data Sheet E1194E20 (Ver. 2.0) 38 BL = 8 or longer ;; ;; EDK1216CFBJ t0 t1 t2 t3 t4 t5 t6 t7 CK /CK Command WRIT NOP BST NOP DM DQ in0 in1 in2 in3 in4 in5 DQS BL = 8 or longer Data will be written Following data will not be written. [WRITE to BST delay = 3 clock cycle] Preliminary Data Sheet E1194E20 (Ver. 2.0) 39 EDK1216CFBJ A Read command to the consecutive Precharge command interval Operation by each case of destination bank of the consecutive Precharge command. Bank address 1. Same 2. Different Operation The PRE and PALL command can interrupt a read operation. To complete a burst read operation, tRPD is required between the read and the precharge command. Please refer to the following timing chart. The PRE command does not interrupt a read command. No interval timing is required between the read and the precharge command. READ to PRECHARGE Command Interval (same bank) : To output all data To complete a burst read operation and get a burst length of data, the consecutive precharge command must be issued tRPD (= BL/ 2 cycles) after the read command is issued. t0 t1 t2 t3 NOP READ NOP PRE/ PALL t4 t5 t6 t7 t8 CK /CK Command DQ NOP out0 out1 out2 out3 DQS tRPD = BL/2 READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4) READ to PRECHARGE Command Interval (same bank): To stop output data A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become high-Z tHZP (= CL) after the precharge command. t0 t1 t2 t3 READ PRE/PALL t4 t5 t6 t7 t8 CK /CK Command NOP NOP High-Z DQ out0 out1 High-Z DQS tHZP READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 4, 8) Preliminary Data Sheet E1194E20 (Ver. 2.0) 40 EDK1216CFBJ A Write command to the consecutive Precharge command interval Operation by each case of destination bank of the consecutive Precharge command. Bank address 1. Same 2. Different Operation The PRE and PALL command can interrupt a write operation. To complete a burst write operation, tWPD is required between the write and the precharge command. Please refer to the following timing chart. The PRE command does not interrupt a write command. No interval timing is required between the write and the precharge command. WRITE to PRECHARGE Command Interval (same bank) The minimum interval tWPD is necessary between the write command and the precharge command. t0 t1 t2 t3 t4 tn tn + 1 tn + 2 CK /CK Command WRIT PRE/PALL NOP NOP tWPD tWR DM DQS DQ in0 in1 in2 in3 Last data input WRITE to PRECHARGE Command Interval (same bank) (BL = 4) t0 t1 t2 t3 tn tn + 1 tn + 2 tn + 3 CK /CK Command WRIT PRE/PALL NOP NOP tWPD tWR DM DQS DQ in0 in1 Last data input in2 in3 Data masked BL = 4 WRITE to PRECHARGE Command Interval (same bank) (BL = 4, DM to mask data) Preliminary Data Sheet E1194E20 (Ver. 2.0) 41 EDK1216CFBJ Bank active command interval Destination row of the consecutive ACT command Bank address Row address State 1. Same Any ACTIVE 2. Different Any ACTIVE IDLE Operation Two successive ACT commands can be issued at tRC interval. In between two successive ACT operations, precharge command should be executed. Precharge the bank. tRP after the precharge command, the consecutive ACT command can be issued. tRRD after an ACT command, the next ACT command can be issued. CK /CK Command Address ACTV ACT ACT ROW: 0 ROW: 1 Bank0 Active Bank3 Active PRE NOP NOP ACT NOP ROW: 0 BA tRRD Bank0 Precharge Bank0 Active tRC Bank Active to Bank Active Mode register set to Bank-active command interval The interval between setting the mode register and executing a bank-active command must be no less than tMRD. CK /CK Command MRS Address CODE NOP ACT BS and ROW Mode Register Set tMRD Preliminary Data Sheet E1194E20 (Ver. 2.0) 42 Bank3 Active NOP EDK1216CFBJ DM Control DM can mask input data. By setting DM to low, data can be written. UDM and LDM can mask the upper and lower byte of input data, respectively. When DM is set to high, the corresponding data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask function is 0. t1 t2 t3 t4 DQS DQ Mask Mask DM Write mask latency = 0 DM Control Preliminary Data Sheet E1194E20 (Ver. 2.0) 43 t5 t6 EDK1216CFBJ Timing Waveforms Command and Addresses Input Timing Definition CK /CK Command (/RAS, /CAS, /WE, /CS) tIS tIH tIS tIH Address = Don't care Read Timing Definition (1) CK /CK Command READ tLZ (max.) tLZ (min.) DQ (Output) tHZ (max.) tHZ (min.) High-Z High-Z tLZ (max.) tLZ (min.) DQS High-Z High-Z CL = 3 BL = 2 Preliminary Data Sheet E1194E20 (Ver. 2.0) 44 EDK1216CFBJ Read Timing Definition (2) /CK CK tDQSCK tAC (min.) DQS tAC (min.) tDSC Fastest DQ (Output) tQH tDQSQ Slowest DQ (Output) Data valid window tDQSCK tAC (max.) DQS tDQSQ Fastest DQ (Output) tQH tAC (max.) tQHS Slowest DQ (Output) Data valid window BL = 4 = Invalid Write Timing Definition tCK /CK CK tDQSS tDSH tDSS tDSS tDSC tWPRES DQS tDQSL tWPRE tDQSH tWPST DQ (Din) tDS tDH tDIPW tDS tDH tDIPW DM tDIPW BL = 4 = Don't care Preliminary Data Sheet E1194E20 (Ver. 2.0) 45 EDK1216CFBJ Power on Sequence* CK /CK Clock cycle is necessary CKE VIH tMRD tMRD 2 refresh cycles are necessary /CS /RAS /CAS /WE BA0 BA1 A10 Address key Address key Address DM High-Z DQ tRP Precharge All Banks Command is necessary Mode Register Set Command is necessary tRFC Extended Mode Register Set Command is necessary CBR (Auto) Refresh Command is necessary tRFC CBR (Auto) Refresh Command is necessary Activate Command = Don't care Note: The sequence of auto refresh, mode register programming and extended mode register programming above may be transposed. Preliminary Data Sheet E1194E20 (Ver. 2.0) 46 EDK1216CFBJ Read Cycle tCK tCH tCL CK /CK tRC VIH CKE tRAS tRCD tRP tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH /CS /RAS /CAS /WE BA A10 tIS tIH Address DM DQS (output) DQ (output) tRPRE High-Z tDSC tRPST High-Z Bank 0 Active Bank 0 Read Bank 0 Precharge Preliminary Data Sheet E1194E20 (Ver. 2.0) 47 CL = 3 BL = 4 Bank0 Access = Don't care EDK1216CFBJ Write Cycle tCK tCH tCL CK /CK tRC VIH CKE tRP tRAS tRCD tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH /CS /RAS /CAS /WE BA A10 tIS tIH Address tDQSS tDQSL tWPST DQS (input) tDQSH tDS tDS tDH DM tDS tDH DQ (input) tDH Bank 0 Active tWR Bank 0 Write Bank 0 Precharge Preliminary Data Sheet E1194E20 (Ver. 2.0) 48 CL = 2 BL = 4 Bank0 Access = Don't care EDK1216CFBJ Mode Register Set Cycle T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 /CK CK CKE VIH /CS /RAS /CAS /WE BA code Address C: b R: b code valid DM High-Z DQS High-Z b DQ tMRD tRP Mode register set Precharge If needed Bank 3 Read Bank 3 Active Bank 3 Precharge CL = 3 BL = 4 = Don't care Read/Write Cycle T0 /CK CK CKE T1 T2 T3 T4 C:a R:b T5 T6 T7 T8 T9 T10 T11 Tn Tn+1 Tn+2 Tn+3 Tn+4 VIH /CS /RAS /CAS /WE BA Address R:a C:b'' C:b DM DQS b a DQ Read tRWD Bank 0 Active b’’ Write Read tWRD Bank 0 Bank 3 Read Active Bank 3 Write Preliminary Data Sheet E1194E20 (Ver. 2.0) 49 Bank 3 Read Read cycle CL = 3 BL = 4 = Don't care EDK1216CFBJ Auto Refresh Cycle /CK CK CKE VIH /CS /RAS /CAS /WE BA Address A10=1 R: b C: b DM High-Z DQS High-Z DQ tRP Precharge If needed b tRFC Auto Refresh Bank 0 Active Bank 0 Read CL = 3 BL = 4 = Don't care Preliminary Data Sheet E1194E20 (Ver. 2.0) 50 EDK1216CFBJ Self-Refresh Cycle /CK CK tIS CKE tIH CKE = low /CS /RAS /CAS /WE BA Address A10=1 R: b C: b Bank 0 Active Bank 0 Read DM DQS DQ tRP Precharge If needed tSREX Self refresh entry Self refresh exit BL = 4 = Don't care Preliminary Data Sheet E1194E20 (Ver. 2.0) 51 EDK1216CFBJ Power Down Entry and Exit /CK CK tIS tIH CKE = low CKE tCKE /CS /RAS /CAS /WE BA Address A10=1 R: b R: c DM DQS DQ tRP tPDEX tPDEN Precharge If needed Power down entry Power down exit Bank 0 Active Bank 0 Read BL = 4 = Don't care Preliminary Data Sheet E1194E20 (Ver. 2.0) 52 EDK1216CFBJ Package Drawing 60-ball FBGA Solder ball: Lead free (Sn-Ag-Cu) Unit: mm 5.5 ± 0.1 0.2 S A 6.0 ± 0.1 INDEX MARK 0.2 S B 0.2 S 0.88 +0.12 −0.08 S 0.25 ± 0.05 0.08 S 0.5 0.25 B φ0.05 M S A B 4.5 60-φ0.3 ± 0.05 A INDEX MARK 1.25 0.5 4.5 ECA-TS2-0230-02 Preliminary Data Sheet E1194E20 (Ver. 2.0) 53 EDK1216CFBJ Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the EDK1216CFBJ. Type of Surface Mount Device EDK1216CFBJ: 60-ball FBGA < Lead free (Sn-Ag-Cu) > Preliminary Data Sheet E1194E20 (Ver. 2.0) 54 EDK1216CFBJ NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Preliminary Data Sheet E1194E20 (Ver. 2.0) 55 EDK1216CFBJ Mobile RAM is a trademark of Elpida Memory, Inc. The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Be aware that this product is for use in typical electronic equipment for general-purpose applications. Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] Usage in environments with special characteristics as listed below was not considered in the design. Accordingly, our company assumes no responsibility for loss of a customer or a third party when used in environments with the special characteristics listed below. Example: 1) Usage in liquids, including water, oils, chemicals and organic solvents. 2) Usage in exposure to direct sunlight or the outdoors, or in dusty places. 3) Usage involving exposure to significant amounts of corrosive gas, including sea air, CL 2 , H 2 S, NH 3 , SO 2 , and NO x . 4) Usage in environments with static electricity, or strong electromagnetic waves or radiation. 5) Usage in places where dew forms. 6) Usage in environments with mechanical vibration, impact, or stress. 7) Usage near heating elements, igniters, or flammable items. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0706 Preliminary Data Sheet E1194E20 (Ver. 2.0) 56