DATA SHEET 128M bits DDR SDRAM EDD1232ABBH (4M words × 32 bits) Specifications Features • Density: 128M bits • Organization ⎯ 1M words × 32 bits × 4 banks • Package: 144-ball FBGA ⎯ Lead-free (RoHS compliant) • Power supply: VDD, VDDQ = 2.5V ± 0.125V • Data rate: 400Mbps (max.) • Four internal banks for concurrent operation • Interface: SSTL_2 • Burst lengths (BL): 2, 4, 8 • Burst type (BT): ⎯ Sequential (2, 4, 8) ⎯ Interleave (2, 4, 8) • /CAS Latency (CL): 3 • Precharge: auto precharge operation for each burst access • Driver strength: weak/matched • Refresh: auto-refresh, self-refresh • ×32 organization • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 2 bits prefetch pipelined architecture • Bi-directional data strobe (DQS) is transmitted /received with data for capturing data at the receiver • Data inputs, outputs, and DM are synchronized with DQS • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Data mask (DM) for write data • Refresh cycles: 4096 cycles/32ms ⎯ Average refresh period: 7.8μs • Operating ambient temperature range ⎯ TA = 0°C to +70°C Document No. E0874E40 (Ver. 4.0) Date Published April 2007 (K) Japan Printed in Japan URL: http://www.elpida.com ©Elpida Memory, Inc. 2006-2007 EDD1232ABBH Ordering Information Part number Mask version Organization (words × bits) Internal banks Data Rate Mbps (max.) JEDEC speed bin (CL-tRCDRD-tRP) Package EDD1232ABBH-5C-E B 4M × 32 4 400 DDR400C (3-4-4) 144-ball FBGA Part Number E D D 12 32 A B BH - 5C - E Elpida Memory Type D: Monolithic Device Product Family D: DDR SDRAM Density / Bank 12: 128M / 4-bank Organization 32: x32 Power Supply, Interface A: 2.5V, SSTL_2 Die Rev. Package BH: FBGA Speed 5C: DDR400C (3-4-4) Environment Code E: Lead Free (RoHS compliant) Data Sheet E0874E40 (Ver. 4.0) 2 EDD1232ABBH Pin Configurations /xxx indicates active low signal. 144-ball FBGA 2 3 4 5 6 7 8 DQ3 DQ2 DQ0 VDDQ DQ1 9 10 11 12 13 DM3 DQS3 B DQS0 DM0 VSSQ DQ31 DQ29 DQ28 VSSQ C DQ4 VDDQ DQ6 DQ5 NC VDDQ VDDQ DQ30 VDDQ NC VDDQ DQ27 D E F DQ7 VSSQ VSSQ VSSQ VDDQ VDD VSS DQ17 DQ16 VDDQ VSSQ G DQ19 DQ18 VDDQ VSSQ H J K DQS2 DM2 NC VSSQ DQ21 DQ20 VDDQ VSSQ DQ22 DQ23 VDDQ VSSQ VDD VDD VSSQ VSSQ VSSQ DQ26 DQ25 VSSQ VSS VSS VSSQ VSS VSS VSS VSS VSSQ VDDQ DQ15 DQ14 VSS VSS VSS VSS VSSQ VDDQ DQ13 DQ12 VSS VSS VSS VSS VSSQ DM1 DQS1 VSS VSS VSS VSS VSSQ VDDQ DQ11 DQ10 VSS VSS VSS VSS VSSQ VDDQ DQ9 DQ8 Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal Thermal VSS VDD NC VDDQ DQ24 L /CAS /WE VDD VSS A10 VDD VDD RFU VSS VDD NC NC /RAS NC NC BA1 A2 A11 A9 A5 RFU CK /CK NC /CS NC BA0 A0 A1 A3 A4 A6 A7 A8 (AP) CKE VREF M N (Top view) Pin name Function Pin name Function A0 to A11 Address inputs CK Clock input BA0, BA1 Bank select address /CK Differential Clock input DQ0 to DQ31 Data-input/output CKE Clock enable DQS0 to DQS3 Input and output data strobe VREF Input reference voltage /CS Chip select VDD Power for internal circuit /RAS Row address strobe command VSS Ground for internal circuit /CAS Column address strobe command VDDQ Power for DQ circuit /WE Write enable VSSQ Ground for DQ circuit DM0 to DM3 Input mask RFU Reserved for future use NC No connection Data Sheet E0874E40 (Ver. 4.0) 3 EDD1232ABBH CONTENTS Specifications.................................................................................................................................................1 Features.........................................................................................................................................................1 Ordering Information......................................................................................................................................2 Part Number ..................................................................................................................................................2 Pin Configurations .........................................................................................................................................3 Electrical Specifications.................................................................................................................................5 Block Diagram .............................................................................................................................................11 Pin Function.................................................................................................................................................12 Command Operation ...................................................................................................................................14 Simplified State Diagram .............................................................................................................................21 Operation of the DDR SDRAM ....................................................................................................................22 Timing Waveforms.......................................................................................................................................42 Package Drawing ........................................................................................................................................48 Recommended Soldering Conditions..........................................................................................................49 Data Sheet E0874E40 (Ver. 4.0) 4 EDD1232ABBH Electrical Specifications • All voltages are referenced to VSS (GND). • After power up, wait more than 200 µs and then, execute power on sequence and CBR (Auto) refresh before proper device operation is achieved. Absolute Maximum Ratings Parameter Symbol Rating Unit Voltage on any pin relative to VSS VT –1.0 to +3.6 V Supply voltage relative to VSS VDD –1.0 to +3.6 V Short circuit output current IOS 50 mA Power dissipation PD 1.0 W Operating ambient temperature TA 0 to +70 °C Storage temperature Tstg –55 to +125 °C Note Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions (TA = 0 to +70°C) Parameter Symbol Supply voltage VDD, VDDQ VSS, VSSQ min. typ. max. Unit Notes 2.375 2.5 2.625 V 1 0 0 0 V Input reference voltage VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V Termination voltage VTT VREF – 0.04 VREF VREF + 0.04 V Input high voltage VIH (DC) VREF + 0.15 — VDDQ + 0.3 V 2 Input low voltage VIL (DC) –0.3 — VREF – 0.15 V 3 VIN (DC) –0.3 — VDDQ + 0.3 V 4 VIX (DC) 0.5 × VDDQ − 0.2V 0.5 × VDDQ 0.5 × VDDQ + 0.2V V VID (DC) 0.36 — VDDQ + 0.6 Input voltage level, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input differential voltage, CK and /CK inputs Notes: 1. 2. 3. 4. 5. 6. V 5, 6 VDDQ must be lower than or equal to VDD. VIH is allowed to exceed VDD up to 3.6V for the period shorter than or equal to 5ns. VIL is allowed to outreach below VSS down to –1.0V for the period shorter than or equal to 5ns. VIN (DC) specifies the allowable DC execution of each differential input. VID (DC) specifies the input differential voltage required for switching. VIH (CK) min assumed over VREF + 0.18V, VIL (CK) max assumed under VREF – 0.18V if measurement. Data Sheet E0874E40 (Ver. 4.0) 5 EDD1232ABBH DC Characteristics 1 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.125V, VSS, VSSQ = 0V) Parameter Symbol Grade Operating current (ACT-PRE) IDD0 max. Unit Test condition CKE ≥ VIH, tRC = tRC (min.) CKE ≥ VIH, BL = 4,CL = 3, tRC = tRC (min.) Notes 140 mA IDD1 160 mA IDD2P 20 mA Floating idle standby current IDD2F 40 mA Quiet idle standby current IDD2Q 35 mA Active power down standby current IDD3P 40 mA CKE ≤ VIL 3 Active standby current IDD3N 100 mA CKE ≥ VIH, /CS ≥ VIH tRAS = tRAS (max.) 3, 5, 6 IDD4R 330 mA CKE ≥ VIH, BL = 2, CL = 3 1, 2, 5, 6 IDD4W 330 mA CKE ≥ VIH, BL = 2,CL = 3 1, 2, 5, 6 Auto Refresh current IDD5 200 mA Self refresh current IDD6 7 mA Operating current (4 banks interleaving) IDD7A 380 mA Operating current (ACT-READ-PRE) Idle power down standby current Operating current (Burst read operation) Operating current (Burst write operation) CKE ≤ VIL CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF CKE ≥ VIH, /CS ≥ VIH DQ, DQS, DM = VREF 1, 2, 9 1, 2, 5 4 4, 5 4, 10 tRFC = tRFC (min.), Input ≤ VIL or ≥ VIH Input ≥ VDD – 0.2 V Input ≤ 0.2 V BL = 4 1, 5, 6, 7 Notes: 1. These IDD data are measured under condition that DQ pins are not connected. 2. One bank operation. 3. One bank active. 4. All banks idle. 5. Command/Address transition once per one clock cycle. 6. DQ, DM and DQS transition twice per one clock cycle. 7. 4 banks active. Only one bank is running at tRC = tRC (min.) 8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general. 9. Command/Address transition once every two clock cycle. 10. Command/Address stable at ≥ VIH or ≤ VIL. DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.125V, VSS, VSSQ = 0V) Parameter Symbol min. max. Unit Test condition Input leakage current ILI –2 2 µA VDD ≥ VIN ≥ VSS Output leakage current ILO –5 5 µA VDDQ ≥ VOUT ≥ VSS Data Sheet E0874E40 (Ver. 4.0) 6 Notes EDD1232ABBH Pin Capacitance (TA = +25°C, VDD, VDDQ = 2.5V ± 0.125V) Parameter Symbol Pins min. typ. max. Unit Notes Input capacitance CI1 CK, /CK 1 — 5 pF 1 CI2 All other input pins 1 — 4 pF 1 CI/O DQ, DM, DQS 1 — 6.5 pF 1, 2 Data input/output capacitance Notes: 1. These parameters are measured on conditions: TA = +25°C. 2. DOUT circuits are disabled. f = 100MHz, VOUT = VDDQ/2, ΔVOUT = 0.2V, AC Characteristics (TA = 0 to +70°C, VDD, VDDQ = 2.5V ± 0.125V, VSS, VSSQ = 0V) -5C Parameter Symbol min. max. Unit Notes Clock cycle time tCK 5 12 ns 10 CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK tHP min (tCH, tCL) — tCK DQ output access time from CK, /CK tAC –0.7 0.7 ns 2, 11 DQS output access time from CK, /CK tDQSCK –0.7 0.7 ns 2, 11 DQS to DQ skew tDQSQ — 0.45 ns 3 CK half period DQ/DQS output hold time from DQS tQH tHP – 0.45 — ns Data-out high-impedance time from CK, /CK tHZ — 0.7 ns 5, 11 Data-out low-impedance time from CK, /CK tLZ –0.7 0.7 ns 6, 11 Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK DQ and DM input setup time tDS 0.45 — ns 8 DQ and DM input hold time tDH 0.45 — ns 8 DQ and DM input pulse width tDIPW 1.75 — ns 7 Write preamble setup time tWPRES 0 — ns Write preamble hold time tWPREH 0.25 — tCK Write postamble tWPST 0.4 0.6 tCK Write command to first DQS latching transition 166MHz < Operating frequency ≤ 200MHz tDQSS 0.8 1.2 tCK tDQSS 0.75 1.25 tCK DQS falling edge to CK setup time tDSS 0.2 — tCK DQS falling edge hold time from CK tDSH 0.2 — tCK DQS input high pulse width 166MHz < Operating frequency ≤ 200MHz tDQSH 0.4 — tCK tDQSH 0.35 — tCK tDQSL 0.4 — tCK Operating frequency ≤ 166MHz Operating frequency ≤ 166MHz DQS input low pulse width 166MHz < Operating frequency ≤ 200MHz Operating frequency ≤ 166MHz 9 tDQSL 0.35 — tCK Address and control input setup time tIS 1.0 — ns 8 Address and control input hold time tIH 1.0 — ns 8 7 Address and control input pulse width tIPW 2.2 — ns Mode register set command cycle time tMRD 2 — tCK Active to Precharge command period tRAS 40 120000 ns Data Sheet E0874E40 (Ver. 4.0) 7 EDD1232ABBH -5C Parameter Symbol min. max. Unit Active to Active/Auto refresh command period tRC 60 — ns Auto refresh to Active/Auto refresh command period tRFC 70 — ns Active to Read delay tRCDRD 18 — ns Active to Write delay tRCDWR 10 — ns Precharge to active command period tRP 18 — ns Active to Autoprecharge delay tRAP tRCDRD min. — ns Active to active command period tRRD 2 — tCK Write recovery time tWR 15 — ns Auto precharge write recovery and precharge time tDAL 3+ (tRP/tCK) — tCK Internal write to Read command delay tWTR 2 — tCK Average periodic refresh interval tREFI — 7.8 µs Notes Notes: 1. On all AC measurements, we assume the test conditions shown in the next page. For timing parameter definitions, see ‘Timing Waveforms’ section. 2. This parameter defines the signal transition delay from the cross point of CK and /CK. The signal transition is defined to occur when the signal level crossing VTT. 3. The timing reference level is VTT. 4. Output valid window is defined to be the period between two successive transition of data out or DQS (read) signals. The signal transition is defined to occur when the signal level crossing VTT. 5. tHZ is defined as DOUT transition delay from Low-Z to High-Z at the end of read burst operation. The timing reference is cross point of CK and /CK. This parameter is not referred to a specific DOUT voltage level, but specify when the device output stops driving. 6. tLZ is defined as DOUT transition delay from High-Z to Low-Z at the beginning of read operation. This parameter is not referred to a specific DOUT voltage level, but specify when the device output begins driving. 7. Input valid windows is defined to be the period between two successive transition of data input or DQS (write) signals. The signal transition is defined to occur when the signal level crossing VREF. 8. The timing reference level is VREF. 9. The transition from Low-Z to High-Z is defined to occur when the device output stops driving. A specific reference voltage to judge this transition is not given. 10. tCK (max.) is determined by the lock range of the DLL. Beyond this lock range, the DLL operation is not assured. 11. tCK = tCK (min) when these parameters are measured. Otherwise, absolute minimum values of these values are 10% of tCK. 12. VDD is assumed to be 2.5V ± 0.125V. VDD power supply variation per cycle expected to be less than 0.4V/400 cycle. Data Sheet E0874E40 (Ver. 4.0) 8 EDD1232ABBH Test Conditions Parameter Symbol Value Unit Input reference voltage VREF VDDQ/2 V Termination voltage VTT VREF V Input high voltage VIH (AC) VREF + 0.31 V Input low voltage VIL (AC) VREF − 0.31 V VID (AC) 0.62 V VIX (AC) VREF V SLEW 1 V/ns Input differential voltage, CK and /CK inputs Input differential cross point voltage, CK and /CK inputs Input signal slew rate tCK VDD CK VID VREF /CK VSS tCL tCH VIX VDD VIH VIL VREF VSS Δt SLEW = (VIH (AC) – VIL (AC))/Δt VTT Measurement point RT = 50Ω DQ CL = 30pF Input Waveforms and Output Load Data Sheet E0874E40 (Ver. 4.0) 9 EDD1232ABBH Timing Parameter Measured in Clock Cycle Number of clock cycle tCK Parameter 5ns 6ns 7.5ns Symbol min. max. min. max. min. max. Unit tWPD 4 + BL/2 ⎯ 4 + BL/2 ⎯ 3 + BL/2 ⎯ tCK tRPD BL/2 ⎯ BL/2 ⎯ BL/2 ⎯ tCK tWRD 3 + BL/2 ⎯ 3 + BL/2 ⎯ 3 + BL/2 ⎯ tCK tBSTW 3 ⎯ 3 ⎯ 3 ⎯ tCK Burst stop command to DQ High-Z tBSTZ 3 3 3 3 3 3 tCK Read command to write command delay (to output all data) tRWD 3 + BL/2 ⎯ 3 + BL/2 ⎯ 3 + BL/2 ⎯ tCK Write to pre-charge command delay (same bank) Read to pre-charge command delay (same bank) Write to read command delay (to input all data) Burst stop command to write command delay Pre-charge command to High-Z tHZP 3 3 3 3 3 3 tCK Write command to data in latency tWCD 1 1 1 1 1 1 tCK Write recovery time tWR 3 ⎯ 3 ⎯ 2 ⎯ tCK DM to data in latency tDMD 0 0 0 0 0 0 tCK Self refresh exit to non-read command tSNR 12 ⎯ 12 ⎯ 12 ⎯ tCK Self refresh exit to read command 200 ⎯ 200 ⎯ 200 ⎯ tCK 1 1 1 1 1 tCK tSRD Power down entry tPDEN 1 Power down exit to command input tPDEX 2tCK + tIS ⎯ Active to Precharge command period tRAS 8 ⎯ 7 ⎯ 12 ⎯ 10 14 ⎯ Active to Active/Auto refresh command tRC period Auto refresh to Active/Auto refresh tRFC command period 2tCK + tIS ⎯ 2tCK + tIS ⎯ tCK 6 ⎯ tCK ⎯ 8 ⎯ tCK 12 ⎯ 10 ⎯ tCK Active to Read delay tRCDRD 4 ⎯ 3 ⎯ 3 ⎯ tCK Active to Write delay tRCDWR 2 ⎯ 2 ⎯ 2 ⎯ tCK Precharge to active command period tRP 4 ⎯ 3 ⎯ 3 ⎯ tCK Auto precharge write recovery and precharge time tDAL 7 ⎯ 6 ⎯ 6 ⎯ tCK Data Sheet E0874E40 (Ver. 4.0) 10 EDD1232ABBH Clock generator Block Diagram Bank 3 Bank 2 Bank 1 A0 to A11, BA0, BA1 Mode register Row address buffer and refresh counter Row decoder CK /CK CKE Memory cell array Bank 0 Control logic /CS /RAS /CAS /WE Command decoder Sense amp. Column decoder Column address buffer and burst counter Data control circuit Latch circuit DLL CK, /CK Input & Output buffer DQ Data Sheet E0874E40 (Ver. 4.0) 11 DQS DM EDD1232ABBH Pin Function CK, /CK (input pins) The CK and the /CK are the master clock inputs. All inputs except DM, DQS and DQs are referred to the cross point of the CK rising edge and the /CK falling edge. When a read operation, DQS and DQs are referred to the cross point of the CK and the /CK. When a write operation, DQS and DQs are referred to the cross point of the DQS and the VREF level. DQS for write operation is referred to the cross point of the CK and the /CK. CK is the master clock input to this pin. The other input signals are referred at CK rising edge. /CS (input pin) When /CS is Low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A11 (input pins) Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of the CK rising edge and the /CK falling edge in a bank active command cycle. Column address (See “Address Pins Table”) is loaded via the A0 to the A7 at the cross point of the CK rising edge and the /CK falling edge in a read or a write command cycle. This column address becomes the starting address of a burst operation. [Address Pins Table] Address (A0 to A11) Part number Row address Column address EDD1232ABBH AX0 to AX11 AY0 to AY7 A8 (AP) (input pin) A8 defines the precharge mode when a precharge command, a read command or a write command is issued. If A8 = high when a precharge command is issued, all banks are precharged. If A8 = Low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. If A8 = high when read or write command, autoprecharge function is enabled. While A8 = Low, auto-precharge function is disabled. BA0 and BA1 (input pins) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. Data Sheet E0874E40 (Ver. 4.0) 12 EDD1232ABBH CKE (input pin) This pin determines whether or not the next CK is valid. If CKE is high, the next CK rising edge is valid. If CKE is Low. CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven Low and exited when it resumes to high. CKE must be maintained high throughout read or write access. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper hold time tIH. DM0 to DM3 (input pin) DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VREF. When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up. Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). DQ0 to DQ31 (input/output pins) Data is input to and output from these pins. DQS0 to DQS3 (input and output pin): DQS0 to DQS3 provide the read data strobes (as output) and the write data strobes (as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table). [DQS and DM Correspondence Table] DQS Data mask DQs DQS0 DM0 DQ0 to DQ7 DQS1 DM1 DQ8 to DQ15 DQS2 DM2 DQ16 to DQ23 DQS3 DM3 DQ24 to DQ31 VDD, VSS, VDDQ, VSSQ (Power supply) VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output buffers. Data Sheet E0874E40 (Ver. 4.0) 13 EDD1232ABBH Command Operation Command Truth Table DDR SDRAM recognize the following commands specified by the /CS, /RAS, /CAS, /WE and address pins. All other combinations than those in the table below are illegal. CKE Command Symbol n–1 n /CS /RAS /CAS /WE BA1 BA0 AP Address Ignore command DESL H H H × × × × × × × No operation NOP H H L H H H × × × × Burst stop in read command BST H H L H H L × × × × Column address and read command READ H H L H L H V V L V Read with auto-precharge READA H H L H L H V V H V Column address and write command WRIT H H L H L L V V L V Write with auto-precharge WRITA H H L H L L V V H V Row address strobe and bank active ACT H H L L H H V V V V Precharge select bank PRE H H L L H L V V L × Precharge all bank PALL H H L L H L × × H × Refresh REF H H L L L H × × × × SELF H L L L L H × × × × Mode register set MRS H H L L L L L L V V EMRS H H L L L L L H L V Remark: H: VIH. L: VIL. ×: VIH or VIL V: Valid address input Note: The CKE level must be kept for 1 CK cycle at least. Ignore command [DESL] When /CS is high at the cross point of the CK rising edge and the VREF level, every input are neglected and internal status is held. No operation [NOP] As long as this command is input at the cross point of the CK rising edge and the VREF level, address and data input are neglected and internal status is held. Burst stop in read operation [BST] This command stops a burst read operation, which is not applicable for a burst write operation. Column address strobe and read command [READ] This command starts a read operation. The start address of the burst read is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. After the completion of the read operation, the output buffer becomes High-Z. Read with auto-precharge [READA] This command starts a read operation. After completion of the read operation, precharge is automatically executed. Column address strobe and write command [WRIT] This command starts a write operation. The start address of the burst write is determined by the column address (See “Address Pins Table” in Pin Function) and the bank select address. Write with auto-precharge [WRITA] This command starts a write operation. After completion of the write operation, precharge is automatically executed. Data Sheet E0874E40 (Ver. 4.0) 14 EDD1232ABBH Row address strobe and bank activate [ACT] This command activates the bank that is selected by BA0, BA1 and determines the row address (AX0 to AX11). (See Bank Select Signal Table) Precharge selected bank [PRE] This command starts precharge operation for the bank selected by BA0, BA1. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. Precharge all banks [PALL] This command starts a precharge operation for all banks. Refresh [REF/SELF] This command starts a refresh operation. There are two types of refresh operation, one is auto-refresh, and another is self-refresh. For details, refer to the CKE truth table section. Mode register set/Extended mode register set [MRS/EMRS] The DDR SDRAM has the two mode registers, the mode register and the extended mode register, to defines how it works. The both mode registers are set through the address pins (the A0 to the A11, BA0 to BA1) in the mode register set cycle. For details, refer to "Mode register and extended mode register set". CKE Truth Table CKE Current state Command n–1 n /CS /RAS /CAS /WE Address Notes Idle Auto-refresh command (REF) H H L L L H × 2 Idle Self-refresh entry (SELF) H L L L L H × 2 Idle Power down entry (PDEN) H L L H H H × H L H × × × × Self refresh Self refresh exit (SELFX) L H L H H H × L H H × × × × L H L H H H × L H H × × × × Power down Power down exit (PDEX) Remark: H: VIH. L: VIL. ×: VIH or VIL. Notes: 1. All the banks must be in IDLE before executing this command. 2. The CKE level must be kept for 1 CK cycle at least. Data Sheet E0874E40 (Ver. 4.0) 15 EDD1232ABBH Function Truth Table The following tables show the operations that are performed when each command is issued in each state of the DDR SDRAM. Current state Precharging* 1 /CS Idle* Refresh 3 (auto-refresh)* Activating* 4 Active* Address Command Operation Next state ldle × × × × DESL NOP L H H H × NOP NOP H H L × BST ldle ILLEGAL* 11 — — L H L H BA, CA, A8 READ/READA ILLEGAL* 11 L H L L BA, CA, A8 WRIT/WRITA ILLEGAL* 11 — 11 — L L L L H L L L H × × × × DESL L H H H × NOP NOP L H H L × BST ILLEGAL* 11 — L H L H BA, CA, A8 READ/READA ILLEGAL* 11 — 11 H H BA, RA ACT ILLEGAL* L BA, A8 PRE, PALL NOP ldle × × ILLEGAL — NOP ldle ldle L H L L BA, CA, A8 WRIT/WRITA ILLEGAL* L L H H BA, RA ACT Activating Active L L H L BA, A8 PRE, PALL NOP — ldle ldle/ Self refresh L L L H × REF, SELF Refresh/ 13 Self refresh* L L L L MODE MRS Mode register set* H × × × × DESL NOP ldle L H H H × NOP NOP ldle L H H L × BST ILLEGAL — L H L × × ILLEGAL — L L × × × ILLEGAL — H × × × × DESL NOP Active L H H H × NOP NOP Active L H H L × BST ILLEGAL* 11 — — 13 ldle L H L H BA, CA, A8 READ/READA ILLEGAL* 11 L H L L BA, CA, A8 WRIT/WRITA ILLEGAL* 11 — ILLEGAL* 11 — ILLEGAL* 11 — L 5 /WE H L 2 /RAS /CAS L H H BA, RA ACT L L H L BA, A8 L L L × × PRE, PALL H × × × × DESL L H H H × L H H L × L H L H L H L L L L L ILLEGAL — NOP Active NOP NOP Active BST ILLEGAL Active BA, CA, A8 READ/READA Starting read operation Read/READA L BA, CA, A8 WRIT/WRITA Write Starting write operation recovering/ precharging H H BA, RA ACT ILLEGAL* L H L BA, A8 PRE, PALL Pre-charge Idle L L × × ILLEGAL — Data Sheet E0874E40 (Ver. 4.0) 16 11 — EDD1232ABBH Current state Read* 6 /CS /RAS /CAS /WE Address Command Operation Next state H × × × × DESL NOP Active L H H H × NOP NOP Active L H H L × BST BST Active L H L H BA, CA, A8 READ/READA Interrupting burst read operation to start new read Active L H L L BA, CA, A8 WRIT/WRITA ILLEGAL* 14 — L L H H BA, RA ACT ILLEGAL* 11 — L L H L BA, A8 PRE, PALL Interrupting burst read operation to start pre-charge Precharging ILLEGAL — NOP Precharging L L L × × Read with auto-preH 7 charge* × × × × DESL L H H H × NOP NOP Precharging L H H L × BST ILLEGAL — L H L H BA, CA, A8 READ/READA ILLEGAL* 15 — — Write* 8 Write recovering* 9 L H L L BA, CA, A8 WRIT/WRITA ILLEGAL* 15 L L H H BA, RA ACT ILLEGAL* 11, 15 — ILLEGAL* 11, 15 — L L H L BA, A8 L L L × × PRE, PALL ILLEGAL H × × × × DESL NOP L H H H × NOP NOP L H H L × BST ILLEGAL — Write recovering Write recovering — Interrupting burst write operation to start read operation. Interrupting burst write operation to start new write operation. L H L H BA, CA, A8 READ/READA L H L L BA, CA, A8 WRIT/WRITA L L H H BA, RA ACT ILLEGAL* PRE* , PALL Interrupting write operation to start precharge. Idle ILLEGAL — NOP Active 12 11 Read/ReadA Write/WriteA — L L H L BA, A8 L L L × × H × × × × DESL L H H H × NOP NOP Active L H H L × BST ILLEGAL — L H L H BA, CA, A8 READ/READA Starting read operation. Read/ReadA L H L L BA, CA, A8 WRIT/WRITA Starting new write operation. L L H H BA, RA L L H L BA, A8 L L L × × ACT PRE/PALL ILLEGAL* — ILLEGAL* 11 — ILLEGAL Data Sheet E0874E40 (Ver. 4.0) 17 Write/WriteA 11 — EDD1232ABBH Current state /CS /RAS /CAS /WE Address Command Operation Next state Write with auto10 pre-charge* H × × × × DESL NOP Precharging L H H H × NOP NOP Precharging L H H L × BST ILLEGAL — L H L H BA, CA, A8 READ/READA ILLEGAL* 15 — — L H L L BA, CA, A8 WRIT/WRIT A ILLEGAL* 15 L L H H BA, RA ACT ILLEGAL* 11, 15 — ILLEGAL* 11, 15 — L L H L BA, A8 L L L × × PRE, PALL ILLEGAL — H: VIH. L: VIL. ×: VIH or VIL The DDR SDRAM is in "Precharging" state for tRP after precharge command is issued. The DDR SDRAM reaches "IDLE" state tRP after precharge command is issued. The DDR SDRAM is in "Refresh" state for tRFC after auto-refresh command is issued. The DDR SDRAM is in "Activating" state for tRCDRD or tRCDWR after ACT command is issued. The DDR SDRAM is in "Active" state after "Activating" is completed. The DDR SDRAM is in "READ" state until burst data have been output and DQ output circuits are turned off. 7. The DDR SDRAM is in "READ with auto-precharge" from READA command until burst data has been output and DQ output circuits are turned off. 8. The DDR SDRAM is in "WRITE" state from WRIT command to the last burst data are input. 9. The DDR SDRAM is in "Write recovering" for tWR after the last data are input. 10. The DDR SDRAM is in "Write with auto-precharge" until tWR after the last data has been input. 11. This command may be issued for other banks, depending on the state of the banks. 12. Issuing WRIT and PRE command back to back in the same bank is prohibited. 13. All banks must be in "IDLE". 14. Before executing a write command to stop the preceding burst read operation, BST command must be issued. 15. The DDR SDRAM supports the concurrent auto-precharge feature, a read with auto-precharge enabled,or a write with auto-precharge enabled, may be followed by any column command to other banks, as long as that command does not interrupt the read or write data transfer, and all other related limitations apply. (E.g. Conflict between READ data and WRITE data must be avoided.) Remark: Notes: 1. 2. 3. 4. 5. 6. The minimum delay from a read or write command with auto precharge enabled, to a command to a different bank, is summarized below. From command To command (different bank, noninterrupting command) Minimum delay (Concurrent AP supported) Units Read w/AP Read or Read w/AP BL/2 tCK Write or Write w/AP CL(rounded up)+ (BL/2) tCK Precharge or Activate 1 tCK Read or Read w/AP 1 + (BL/2) + tWTR tCK Write w/AP Write or Write w/AP BL/2 tCK Precharge or Activate 1 tCK Data Sheet E0874E40 (Ver. 4.0) 18 EDD1232ABBH Command Truth Table for CKE Current State CKE n–1 n Self refresh Self refresh recovery Power down All banks idle Row active /CS /RAS /CAS /WE Address Operation H × × × × × × INVALID, CK (n-1) would exit self refresh L H H × × × × Self refresh recovery L H L H H × × Self refresh recovery L H L H L × × ILLEGAL L H L L × × × ILLEGAL L L × × × × × Maintain self refresh H H H × × × × Idle after tRC H H L H H × × Idle after tRC H H L H L × × ILLEGAL H H L L × × × ILLEGAL H L H × × × × ILLEGAL H L L H H × × ILLEGAL H L L H L × × ILLEGAL H L L L × × × ILLEGAL EXIT power down → Idle H × × × × × L H H × × × × L H L H H H × × Notes INVALID, CK (n – 1) would exit power down L L × × × × H H H × × × Refer to operations in Function Truth Table H H L H × × Refer to operations in Function Truth Table H H L L H × H H L L L H × H H L L L L OPCODE Refer to operations in Function Truth Table H L H × × × Refer to operations in Function Truth Table H L L H × × Refer to operations in Function Truth Table H L L L H × Refer to operations in Function Truth Table H L L L L H × H L L L L L OPCODE Refer to operations in Function Truth Table L × × × × × × Power down H × × × × × × Refer to operations in Function Truth Table L × × × × × × Power down Maintain power down mode Refer to operations in Function Truth Table CBR (auto) refresh Self refresh 1 1 1 Remark: H: VIH. L: VIL. ×: VIH or VIL Note: Self refresh can be entered only from the all banks idle state. Power down can be entered only from all banks idle or row active state. Data Sheet E0874E40 (Ver. 4.0) 19 EDD1232ABBH Auto-refresh command [REF] This command executes auto-refresh. The banks and the ROW addresses to be refreshed are internally determined by the internal refresh controller. The average refresh cycle is 7.8 μs. The output buffer becomes High-Z after autorefresh start. Precharge has been completed automatically after the auto-refresh. The ACT or MRS command can be issued tRFC after the last auto-refresh command. Self-refresh entry [SELF] This command starts self-refresh. The self-refresh operation continues as long as CKE is held Low. During the selfrefresh operation, all ROW addresses are repeated refreshing by the internal refresh controller. A self-refresh is terminated by a self-refresh exit command. Power down mode entry [PDEN] tPDEN (= 1 cycle) after the cycle when [PDEN] is issued. The DDR SDRAM enters into power-down mode. In power down mode, power consumption is suppressed by deactivating the input initial circuit. Power down mode continues while CKE is held Low. No internal refresh operation occurs during the power down mode. [PDEN] do not disable DLL. Self-refresh exit [SELFX] This command is executed to exit from self-refresh mode. To issue non-read commands, tSNR has to be satisfied. To issue read command, tSRD has to be satisfied to adjust DOUT timing by DLL. (200 cycles after [SELFX]) After the exit, input auto-refresh command within 7.8μs. Power down exit [PDEX] The DDR SDRAM can exit from power down mode tPDEX after the cycle when [PDEX] is issued. Data Sheet E0874E40 (Ver. 4.0) 20 EDD1232ABBH Simplified State Diagram SELF REFRESH SR ENTRY SR EXIT MRS MRS EMRS REFRESH IDLE *1 AUTO REFRESH CKE CKE_ IDLE POWER DOWN ACTIVE ACTIVE POWER DOWN CKE_ CKE ROW ACTIVE BST WRITE Write READ WRITE WITH AP WRITE READ WITH AP READ READ READ WITH AP WRITE WITH AP Read READ WITH AP PRECHARGE WRITEA READA PRECHARGE POWER APPLIED POWER ON PRECHARGE PRECHARGE PRECHARGE Automatic transition after completion of command. Transition resulting from command input. Note: 1. After the auto-refresh operation, precharge operation is performed automatically and enter the IDLE state. Data Sheet E0874E40 (Ver. 4.0) 21 EDD1232ABBH Operation of the DDR SDRAM Power-up Sequence (1) Apply power and maintain CKE at an LVCMOS low state (all other inputs are undefined). Apply VDD before or at the same time as VDDQ. Apply VDDQ before or at the same time as VTT and VREF. (2) Start clock and maintain stable condition for a minimum of 200µs. (3) After the minimum 200µs of stable power and clock (CK, /CK), apply NOP and take CKE high. (4) Issue precharge all command for the device. (5) Issue EMRS to enable DLL. (6) Issue a mode register set command (MRS) for "DLL reset" with bit A8 set to high (An additional 200 cycles of clock input is required to lock the DLL after every DLL reset). (7) Issue precharge all command for the device. (8) Issue 2 or more auto-refresh commands. (9) Issue a mode register set command to initialize device operation with bit A8 set to low in order to avoid resetting the DLL. (4) (5) PALL EMRS (6) (7) MRS PALL (8) (9) CK /CK Command 2 cycles (min.) tRP 2 cycles (min.) 2 cycles (min.) DLL enable REF REF REF Any command MRS tRFC tRFC DLL reset with A8 = High 2 cycles (min.) Disable DLL reset with A8 = Low 200 cycles (min) Power-up Sequence after CKE Goes High Mode Register and Extended Mode Register Set There are two mode registers, the mode register and the extended mode register so as to define the operating mode. Parameters are set to both through the A0 to the A11 and BA0, BA1 pins by the mode register set command [MRS] or the extended mode register set command [EMRS]. The mode register and the extended mode register are set by inputting signal via the A0 to the A11 and BA0, BA1 during mode register set cycles. BA0 and BA1 determine which one of the mode register or the extended mode register are set. Prior to a read or a write operation, the mode register must be set. Remind that no other parameters shown in the table bellow are allowed to input to the registers. BA0 BA1 A11 A10 A9 0 0 0 0 0 A8 A7 DR 0 A6 A5 A4 LMODE A3 A2 A1 BT A0 BL MRS A8 DLL Reset A6 A5 A4 CAS Latency 3 0 1 1 0 No A3 Burst Type 1 Yes 1 Interleave 0 Sequential A2 A1 A0 22 BT=0 BT=1 2 2 0 0 1 0 1 0 4 4 0 1 1 8 8 Mode Register Set [MRS] (BA0 = 0, BA1 = 0) Data Sheet E0874E40 (Ver. 4.0) Burst Length EDD1232ABBH BA0 BA1 A11 A10 A9 1 0 0 0 0 A8 A7 A6 A5 A4 A3 A2 A1 A0 0 0 DS 0 0 0 0 DS DLL EMRS A6 A1 Driver Strength A0 DLL Control 0 1 Weak 0 DLL Enable 1 1 Matched 1 DLL Disable Extended Mode Register Set [EMRS] (BA0 = 1, BA1 = 0) Burst Operation The burst type (BT) and the first three bits of the column address determine the order of a data out. Burst length = 2 Burst length = 4 Starting Ad. Addressing(decimal) A0 Sequence Interleave Starting Ad. Addressing(decimal) A1 A0 0 0, 1, 0, 1, 0 0 0, 1, 2, 3, 0, 1, 2, 3, 1 1, 0, 1, 0, 0 1 1, 2, 3, 0, 1, 0, 3, 2, 1 0 2, 3, 0, 1, 2, 3, 0, 1, 1 1 3, 0, 1, 2, 3, 2, 1, 0, Sequence Interleave Burst length = 8 Addressing(decimal) Starting Ad. A2 A1 0 0 A0 Sequence 0 0, 1, 2, 3, 4, 5, 6, 7, Interleave 0, 1, 2, 3, 4, 5, 6, 7, 0 0 1 1, 2, 3, 4, 5, 6, 7, 0, 1, 0, 3, 2, 5, 4, 7, 6, 0 1 0 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 0, 1, 6, 7, 4, 5, 0 1 1 3, 4, 5, 6, 7, 0, 1, 2, 3, 2, 1, 0, 7, 6, 5, 4, 1 0 0 4, 5, 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 0, 1, 2, 3, 1 0 1 5, 6, 7, 0, 1, 2, 3, 4, 5, 4, 7, 6, 1, 0, 3, 2, 1 1 0 6, 7, 0, 1, 2, 3, 4, 5, 6, 7, 4, 5, 2, 3, 0, 1, 1 1 1 7, 0, 1, 2, 3, 4, 5, 6, 7, 6, 5, 4, 3, 2, 1, 0, Data Sheet E0874E40 (Ver. 4.0) 23 EDD1232ABBH Read/Write Operations Bank active A read or a write operation begins with the bank active command [ACT]. The bank active command determines a bank address and a row address. For the bank and the row, a read or a write command can be issued tRCDRD or tRCDWR after the ACT is issued. Read operation The burst length (BL), the /CAS latency (CL) and the burst type (BT) of the mode register are referred when a read command is issued. The burst length (BL) determines the length of a sequential output data by the read command that can be set to 2, 4, or 8. The starting address of the burst read is defined by the column address, the bank select address which are loaded via the A0 to A11 and BA0, BA1 pins in the cycle when the read command is issued. The data output timing are characterized by CL and tAC. The read burst start CL • tCK + tAC (ns) after the clock rising edge where the read command are latched. The DDR SDRAM output the data strobe through DQS simultaneously with data. tRPRE prior to the first rising edge of the data strobe, the DQS are driven Low from VTT level. This low period of DQS is referred as read preamble. The burst data are output coincidentally at both the rising and falling edge of the data strobe. The DQ pins become High-Z in the next cycle after the burst read operation completed. tRPST from the last falling edge of the data strobe, the DQS pins become High-Z. This low period of DQS is referred as read postamble. t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 CK /CK Command Address tRCDRD NOP ACT Row NOP READ NOP Column tRPRE out0 out1 BL = 2 tRPST DQS DQ out0 out1 out2 out3 BL = 4 out0 out1 out2 out3 out4 out5 out6 out7 BL = 8 CL = 3 BL: Burst length Read Operation (Burst Length) Data Sheet E0874E40 (Ver. 4.0) 24 EDD1232ABBH t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5 CK /CK READ Command NOP tRPRE tRPST VTT DQS CL = 3 tAC,tDQSCK out0 DQ out1 out2 out3 VTT Read Operation (/CAS Latency) Write operation The burst length (BL) and the burst type (BT) of the mode register are referred when a write command is issued. The burst length (BL) determines the length of a sequential data input by the write command that can be set to 2, 4, or 8. The latency from write command to data input is fixed to 1. The starting address of the burst read is defined by the column address, the bank select address which are loaded via the A0 to A11, BA0 to BA1 pins in the cycle when the write command is issued. DQS should be input as the strobe for the input-data and DM as well during burst operation. tWPREH prior to the first rising edge of the DQS should be set to Low and tWPST after the last falling edge of the data strobe can be set to High-Z. The leading low period of DQS is referred as write preamble. The last low period of DQS is referred as write postamble. t0 t1 t4 t4.5 t5 t6 t7 t8 t9 CK /CK Command tRCDWR NOP Address ACT NOP Row WRITE NOP Column tWPREH tWPRES BL = 2 in0 in1 tWPST DQS DQ BL = 4 BL = 8 in0 in1 in2 in3 in0 in1 in2 in3 in4 in5 in6 in7 BL: Burst length Write Operation Data Sheet E0874E40 (Ver. 4.0) 25 EDD1232ABBH Burst Stop Burst stop command during burst read The burst stop (BST) command is used to stop data output during a burst read. The BST command stops the burst read and sets the output buffer to High-Z. tBSTZ (= CL) cycles after a BST command issued, the DQ pins become High-Z. The BST command is not supported for the burst write operation. Note that bank address is not referred when this command is executed. t0 t0.5 t1 t1.5 t2 t2.5 t3 t3.5 t4 t4.5 t5 t5.5 CK /CK Command READ BST NOP tBSTZ 3 cycles DQS CL = 3 out0 DQ out1 CL: /CAS latency Burst Stop during a Read Operation Data Sheet E0874E40 (Ver. 4.0) 26 EDD1232ABBH Auto Precharge Read with auto-precharge The precharge is automatically performed after completing a read operation. The precharge starts tRPD (BL/2) cycle after READA command input. tRAP specification for READA allows a read command with auto precharge to be issued to a bank that has been activated (opened) but has not yet satisfied the tRAS (min) specification. A column command to the other active bank can be issued the next cycle after the last data output. Read with auto-precharge command does not limit row commands execution for other bank. Refer to ‘Function truth table and related note(Notes.*15). CK /CK tRAP (min) = tRCDRD (min) Command ACT tRP (min) tRPD 2 cycles (= BL/2) NOP READA ACT DQS tAC,tDQSCK DQ out0 Note: Internal auto-precharge starts at the timing indicated by " out1 out2 out3 ". Read with auto-precharge Write with auto-precharge The precharge is automatically performed after completing a burst write operation. The precharge operation is started (BL/ 2 + 4) cycles after WRITA command issued. A column command to the other banks can be issued the next cycle after the internal precharge command issued. Write with auto-precharge command does not limit row commands execution for other bank. Refer to the ‘Read with Auto-Precharge Enabled, Write with Auto-Precharge Enabled’ section. Refer to ‘Function truth table and related note (Notes.*15). CK /CK tRAS (min) tRP tRCDWR (min) Command ACT NOP NOP WRITA ACT BL/2 + 4 cycles DM DQS DQ in1 in2 in3 Note: Internal auto-precharge starts at the timing indicated by " in4 ". Burst Write (BL = 4) Data Sheet E0874E40 (Ver. 4.0) 27 BL = 4 EDD1232ABBH Command Intervals A Read command to the consecutive Read command Interval Destination row of the consecutive read command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE Operation The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCDRD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. The consecutive read can be performed after an interval of no less than 1 cycle to interrupt the preceding read operation. Precharge the bank without interrupting the preceding read operation. tRP after the precharge command, issue the ACT command. tRCDRD after the ACT command, the consecutive read command can be issued. IDLE t0 t4 t5 READ READ t6 t7 t8 t9 t10 CK /CK Command ACT Address Row NOP NOP Column A Column B BA out out A0 A1 DQ Column = A Column = B Read Read out B0 Column = A Dout out B1 out B2 out B3 Column = B Dout DQS CL = 3 BL = 4 Bank0 Bank0 Active READ to READ Command Interval (same ROW address in the same bank) Data Sheet E0874E40 (Ver. 4.0) 28 t11 EDD1232ABBH t0 t1 t2 ACT NOP ACT t5 t6 READ READ t7 t8 t9 t10 t11 CK /CK Command Address Row0 Row1 NOP NOP Column A Column B BA out out A0 A1 DQ Column = A Column = B Read Read Bank0 Dout out out out out B0 B1 B2 B3 Bank3 Dout DQS Bank0 Active Bank3 Active Bank0 Read Bank3 Read READ to READ Command Interval (different bank) Data Sheet E0874E40 (Ver. 4.0) 29 CL = 3 BL = 4 ;;;;; EDD1232ABBH A Write command to the consecutive Write command Interval Destination row of the consecutive write command Bank address 1. Same 2. Same 3. Different Row address State Operation Same ACTIVE Different — Any ACTIVE The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank to interrupt the preceding write operation. tRP after the precharge command, issue the ACT command. tRCDWR after the ACT command, the consecutive write command can be issued. See ‘A write command to the consecutive precharge interval’ section. The consecutive write can be performed after an interval of no less than 1 cycle to interrupt the preceding write operation. Precharge the bank without interrupting the preceding write operation. tRP after the precharge command, issue the ACT command. tRCDWR after the ACT command, the consecutive write command can be issued. IDLE t0 CK /CK Command Address BA DQ ACT Row tn NOP WRIT tn+1 tn+2 tn+4 tn+5 tn+6 NOP WRIT Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Column = A Write DQS tn+3 Column = B Write Bank0 Active BL = 4 Bank0 WRITE to WRITE Command Interval (same ROW address in the same bank) Data Sheet E0874E40 (Ver. 4.0) 30 ;;; ;;; EDD1232ABBH CK /CK Command Address BA DQ t0 t1 t2 ACT NOP ACT Row0 Row1 tn NOP WRIT tn+1 tn+3 tn+4 tn+5 NOP WRIT Column A Column B inA0 inA1 inB0 inB1 inB2 inB3 Bank0 Write DQS tn+2 Bank0 Active Bank3 Write Bank3 Active BL = 4 Bank0, 3 WRITE to WRITE Command Interval (different bank) Data Sheet E0874E40 (Ver. 4.0) 31 EDD1232ABBH A Read command to the consecutive Write command interval with the BST command Destination row of the consecutive write command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE IDLE t0 t1 READ BST Operation Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank to interrupt the preceding read operation. tRP after the precharge command, issue the ACT command. tRCDWR after the ACT command, the consecutive write command can be issued. See ‘A read command to the consecutive precharge interval’ section. Issue the BST command. tBSTW (≥ tBSTZ) after the BST command, the consecutive write command can be issued. Precharge the bank independently of the preceding read operation. tRP after the precharge command, issue the ACT command. tRCDWR after the ACT command, the consecutive write command can be issued. t2 t3 t4 t5 t6 t7 t8 CK /CK Command WRIT NOP NOP tBSTW (≥ tBSTZ) DM tBSTZ (= CL) DQ out0 out1 in0 in1 in2 in3 High-Z DQS OUTPUT INPUT READ to WRITE Command Interval Data Sheet E0874E40 (Ver. 4.0) 32 BL = 4 CL = 3 EDD1232ABBH A Write command to the consecutive Read command interval: To complete the burst operation Destination row of the consecutive read command Bank address Row address State 1. Same Same ACTIVE 2. Same Different — 3. Different Any ACTIVE Operation To complete the burst operation, the consecutive read command should be performed tWRD (= BL/ 2 + 3) after the write command. Precharge the bank tWPD after the preceding write command. tRP after the precharge command, issue the ACT command. tRCDRD after the ACT command, the consecutive read command can be issued. See ‘A read command to the consecutive precharge interval’ section. To complete a burst operation, the consecutive read command should be performed tWRD (= BL/ 2 + 3) after the write command. Precharge the bank independently of the preceding write operation. tRP after the precharge command, issue the ACT command. tRCDRD after the ACT command, the consecutive read command can be issued. IDLE t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 CK /CK Command WRIT NOP READ NOP tWRD (min) BL/2 + 3 cycle tWTR* DM DQ in0 in1 in2 out0 in3 out1 DQS INPUT OUTPUT Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR. WRITE to READ Command Interval Data Sheet E0874E40 (Ver. 4.0) 33 BL = 4 CL = 3 out2 EDD1232ABBH A Write command to the consecutive Read command interval: To interrupt the write operation Destination row of the consecutive read command Bank address Row address State Operation 1. Same Same ACTIVE DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. 2. Same Different — —* 3. Different Any ACTIVE DM must be input 1 cycle prior to the read command input to prevent from being written invalid data. In case, the read command is input in the next cycle of the write command, DM is not necessary. IDLE —* 1 1 Note: 1. Precharge must be preceded to read command. Therefore read command can not interrupt the write operation in this case. WRITE to READ Command Interval (Same bank, same ROW address) t0 t1 WRIT READ t2 t3 t4 t5 t6 t7 t8 CK /CK Command NOP CL=3 1 cycle DM DQ in0 in1 out0 out1 out2 out3 in2 High-Z High-Z DQS BL = 4 CL = 3 Data masked [WRITE to READ delay = 1 clock cycle] Data Sheet E0874E40 (Ver. 4.0) 34 EDD1232ABBH t0 t1 t2 WRIT NOP READ t3 t4 t5 t6 t7 t8 CK /CK Command NOP 2 cycle CL=3 DM in0 DQ in1 in2 out0 out1 out2 out3 in3 High-Z High-Z DQS Data masked BL = 4 CL = 3 [WRITE to READ delay = 2 clock cycle] t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 CK /CK Command WRIT NOP READ 4 cycle NOP CL=3 tWTR* DM DQ in0 in1 in2 out0 out1 out2 out3 in3 DQS BL = 4 CL = 3 Data masked Note: tWTR is referenced from the first positive CK edge after the last desired data in pair tWTR. [WRITE to READ delay = 4 clock cycle] Data Sheet E0874E40 (Ver. 4.0) 35 EDD1232ABBH A Read command to the consecutive Precharge command interval (same bank): To output all data To complete a burst read operation and get a burst length of data, the consecutive precharge command must be issued tRPD (= BL/ 2 cycles) after the read command is issued. t0 t1 t2 t3 NOP READ NOP PRE/ PALL t4 t5 t6 t7 t8 CK /CK Command NOP DQ out0 out1 out2 out3 DQS tRPD = BL/2 READ to PRECHARGE Command Interval (same bank): To output all data (CL = 3, BL = 4) READ to PRECHARGE Command Interval (same bank): To stop output data A burst data output can be interrupted with a precharge command. All DQ pins and DQS pins become High-Z tHZP (= CL) after the precharge command. t0 t1 t2 t3 t4 READ PRE/PALL t5 t6 t7 t8 CK /CK Command NOP NOP CL = 3 High-Z DQ out0 out1 High-Z DQS tHZP READ to PRECHARGE Command Interval (same bank): To stop output data (CL = 3, BL = 2, 4, 8) Data Sheet E0874E40 (Ver. 4.0) 36 ;;;;;;; ;; ; EDD1232ABBH A Write command to the consecutive Precharge command interval (same bank) The minimum interval tWPD cycles is necessary between the write command and the precharge command. t0 t1 t2 t3 t4 t5 t6 t7 CK /CK Command WRIT PRE/PALL NOP NOP tWPD tWR DM DQS DQ in0 in1 in2 in3 Last data input WRITE to PRECHARGE Command Interval (same bank) (BL = 4) Precharge Termination in Write Cycles During a burst write cycle without auto precharge, the burst write operation is terminated by a precharge command of the same bank. In order to write the last input data, tWR (min) must be satisfied. When the precharge command is issued, the invalid data must be masked by DM. t0 t1 t2 t3 t4 t5 t6 t7 CK /CK Command WRIT PRE/PALL NOP tWR DM DQS DQ in0 in1 in2 in3 Data masked Precharge Termination in Write Cycles (same bank) (BL = 4) Data Sheet E0874E40 (Ver. 4.0) 37 NOP EDD1232ABBH Bank active command interval Destination row of the consecutive ACT command Bank address Row address 1. Same Any ACTIVE 2. Different Any ACTIVE State IDLE Operation Two successive ACT commands can be issued at tRC interval. In between two successive ACT operations, precharge command should be executed. Precharge the bank. tRP after the precharge command, the consecutive ACT command can be issued. tRRD after an ACT command, the next ACT command can be issued. CK /CK Command Address ACTV ACT ACT ROW: 0 ROW: 1 Bank0 Active Bank3 Active NOP PRE NOP ACT NOP ROW: 0 BA tRRD Bank0 Precharge Bank0 Active tRC Bank Active to Bank Active Mode register set to Bank-active command interval The interval between setting the mode register and executing a bank-active command must be no less than tMRD. CK /CK Command MRS Address CODE NOP ACT BS and ROW Mode Register Set tMRD Data Sheet E0874E40 (Ver. 4.0) 38 Bank3 Active NOP EDD1232ABBH DM Control DM can mask input data. By setting DM to Low, data can be written. When DM is set to high, the corresponding data is not written, and the previous data is held. The latency between DM input and enabling/disabling mask function is 0. t1 t2 t3 t4 DQS DQ Mask Mask DM Write mask latency = 0 DM Control Data Sheet E0874E40 (Ver. 4.0) 39 t5 t6 EDD1232ABBH Refresh Requirements The 128M (X32) DDR SDRAM requires a refresh of all rows in any rolling 32ms interval. Each refresh is generated in one of two ways: by an explicit automatic refresh command, or by an internally timed event in self-refresh mode. Dividing the number of device rows into the rolling 32ms interval defines the average refresh interval, tREFI, which is a guideline to controllers for distributed refresh timing. Auto-Refresh When /CS, /RAS and /CAS are held low and /WE high at the rising edge of the clock, the chip enters the automatic refresh mode (REF). All banks of the 128M (X32) DDR SDRAM must be precharged and idle for a minimum of the precharge time (tRP) before the auto refresh command (REF) can be applied. An address counter, internal to the device, supplies the bank address during the refresh cycle. No control of the external address bus is required once this cycle has started. When the refresh cycle has completed, all banks will be in the precharged (idle) state. A delay between the auto refresh command (REF) and the next activate command or subsequent auto refresh command must be greater than or equal to the auto refresh cycle time (tRFC). To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of 8 refresh commands can be posted to any given DDR SDRAM, meaning that the maximum absolute interval between any refresh command and the next Refresh command is 9 × tREFI. Burst refreshing or posting by the DRAM controller greater than 8 refresh cycles is not allowed. t0 t1 t2 t3 /CK CK VIH ≥ tRP CKE Command PRE ≥ tRFC ≥ tRFC NOP REF REF Auto-Refresh Data Sheet E0874E40 (Ver. 4.0) 40 NOP Any Command EDD1232ABBH Self-Refresh The self-refresh command can be used to retain data in the DDR SDRAM, even if the rest of the system is powered down. When in the self-refresh mode, the DDR SDRAM retains data without external clocking. The self-refresh command is initiated like an auto-refresh command except CKE is disabled (low). The DLL is automatically disabled upon entering self-refresh, and is automatically enabled upon exiting self-refresh. Any time the DLL is enabled a DLL reset must follow and 200 clock cycles should occur before a read command can be issued. Input signals except CKE are “Don’t care” during self-refresh. Since CKE is an SSTL2 input, VREF must be maintained during self-refresh. The procedure for exiting self-refresh requires a sequence of commands. First, CK must be stable prior to CKE going back high. Once CKE is high, the DDR SDRAM must have NOP commands issued for tSNR because time is required for the completion of any internal refresh in progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for 200 clock cycles before applying any other command. The use of self-refresh mode introduces the possibility that an internally timed event can be missed when CKE is raised for exit from self-refresh mode. Upon exit from self-refresh an extra auto-refresh command is recommended. t0 t1 t2 t3 t4 t5 t6 tm tn tCK tCH tCL /CK CK ≥ tSNR*3 tRP*1 tIS tIS ≥ tSRD*2 CKE tIS tIH Command SELF NOP NOP NOP Valid Notes: 1. Device must be in the “All banks idle” state prior to entering self-refresh mode. 2. tSRD is applied for a read or a read with autoprecharge command. 3. tSNR is applied for any command except a read or a read with autoprecharge command. Self-Refresh Data Sheet E0874E40 (Ver. 4.0) 41 ;;;;;; EDD1232ABBH Timing Waveforms Command and Addresses Input Timing Definition CK /CK tIS Command (/RAS, /CAS, /WE, /CS) tIH VREF tIS tIH VREF Address Read Timing Definition tCK /CK CK tCL tCH tDQSCK tDQSCK tDQSCK tDQSCK tRPST tRPRE DQS tDQSQ tLZ DQ (Dout) tAC tDQSQ tQH tAC tAC tQH tHZ tDQSQ tDQSQ tQH tQH Write Timing Definition tCK /CK CK tDQSS DQS tDSS tDSH tDSS VREF tWPRES tWPREH DQ (Din) tDQSH tWPST VREF tDS DM tDQSL tDIPW tDH VREF tDS tDH tDIPW Data Sheet E0874E40 (Ver. 4.0) 42 tDIPW EDD1232ABBH Read Cycle tCK tCH tCL CK /CK tRC VIH CKE tRAS tRP tRCDRD tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH /CS /RAS /CAS /WE BA A8 tIS tIH Address DM DQS DQ (output) tRPRE High-Z tRPST High-Z Bank 0 Active Bank 0 Read Bank 0 Precharge Data Sheet E0874E40 (Ver. 4.0) 43 CL = 2 BL = 4 Bank0 Access = VIH or VIL EDD1232ABBH Write Cycle tCK tCH tCL CK /CK tRC VIH CKE tRAS tRP tRCDWR tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH /CS /RAS /CAS /WE BA A8 tIS tIH Address tDQSS DQS (input) tDQSL tWPST tDQSH tDS tDS tDH DM tDS tDH DQ (input) tWR tDH Bank 0 Active Bank 0 Write Bank 0 Precharge Data Sheet E0874E40 (Ver. 4.0) 44 CL = 2 BL = 4 Bank0 Access = VIH or VIL EDD1232ABBH Mode Register Set Cycle 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 /CK CK CKE VIH /CS /RAS /CAS /WE BA code Address C: b R: b code valid DM High-Z DQS High-Z b DQ (output) tMRD tRP Mode register set Precharge If needed Bank 3 Read Bank 3 Active Bank 3 Precharge CL = 2 BL = 4 = VIH or VIL Read/Write Cycle /CK CK CKE VIH /CS /RAS /CAS /WE BA Address R:a C:a R:b C:b'' C:b DM DQS a DQ (output) b’’ High-Z DQ (input) b tRWD Bank 0 Active tWRD Bank 0 Bank 3 Read Active Bank 3 Write Data Sheet E0874E40 (Ver. 4.0) 45 Bank 3 Read Read cycle CL = 2 BL = 4 =VIH or VIL EDD1232ABBH Auto Refresh Cycle /CK CK CKE VIH /CS /RAS /CAS /WE BA Address A8=1 R: b C: b DM DQS b DQ (output) High-Z DQ (input) tRP Precharge If needed tRFC Auto Refresh Bank 0 Active Bank 0 Read CL = 2 BL = 4 = VIH or VIL Data Sheet E0874E40 (Ver. 4.0) 46 EDD1232ABBH Self Refresh Cycle /CK CK tIS tIH CKE CKE = low /CS /RAS /CAS /WE BA Address A8=1 R: b C: b DM DQS DQ (output) High-Z DQ (input) tSNR tRP tSRD Precharge If needed Self refresh entry Self refresh exit Bank 0 Active Bank 0 Read CL = 2.5 BL = 4 = VIH or VIL Data Sheet E0874E40 (Ver. 4.0) 47 EDD1232ABBH Package Drawing 144-ball FBGA Solder ball: Lead free (Sn-Ag-Cu) 0.20 M S B Unit: mm 12.00 ± 0.10 INDEX MARK M S A 12.00 ± 0.10 0.20 0.20 S 1.40 max S 0.10 S 0.35 ± 0.05 A B 0.40 8.80 0.80 8.80 INDEX MARK 0.40 0.80 144 − φ0.45 ± 0.05 0.15 M S A B 0.08 M S ECA-TS2-0131-01 Data Sheet E0874E40 (Ver. 4.0) 48 EDD1232ABBH Recommended Soldering Conditions Please consult with our sales offices for soldering conditions of the EDD1232ABBH. Type of Surface Mount Device EDD1232ABBH: 144-ball FBGA < Lead free (Sn-Ag-Cu) > Data Sheet E0874E40 (Ver. 4.0) 49 EDD1232ABBH NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Data Sheet E0874E40 (Ver. 4.0) 50 EDD1232ABBH The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Data Sheet E0874E40 (Ver. 4.0) 51