EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION General Description The EM39LV040 is a 4M bits Flash memory organized as 512K x 8 bits. The EM39LV040 uses a single 3.0 volt-only power supply for both Read and Write functions. Featuring high performance Flash memory technology, the EM39LV040 provides a typical Byte-Program time of 11 µsec and a typical Sector-Erase time of 40 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV040 conforms to JEDEC standard pin outs for x8 memories. It is offered in package types of 32-lead PLCC, 32-pin TSOP, and known good die (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information). The EM39LV040 devices are developed for applications that require memories with convenient and economical updating of program, data or configurations, e.g., Networking cards, CD-RW, Scanner, Digital TV, Electronic Books, GPS, Router/Switcher, etc. Features Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations Regulated voltage range: 3.0 to 3.6 volts for both read and write operations End-of-Program or End-of-Erase Detection Data# Polling Toggle Bit Sector-Erase Capability Uniform 4Kbyte sectors CMOS I/O Compatibility Sector-Erase Capability Uniform 64Kbyte sectors JEDEC Standard Pin-out and software command sets compatible with single-power supply |Flash memory Read Access Time Access time: 45, 55, 70 and 90 ns Power Consumption Active current: 5 mA (Typical) Standby current: 1 µA (Typical) High Reliability Endurance cycles: 100K (Typical) Data retention: 10 years Erase/Program Features Sector-Erase Time: 40 ms (Typical) Chip-Erase Time: 40 ms (Typical) Byte-Program Time: 11µs (Typical) Chip Rewrite Time: 6 seconds (Typical) Package Option 32-pin PLCC 32-pin TSOP This specification is subject to change without further notice. (07.22.2004 V1.0) Page 1 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Functional Block Diagram Flash Mem ory Array X-Decoder Address Buffer & Latches Mem ory Address CE# OE# Y-Decoder I/O Buffers and Data Latches Control Logic W E# DQ7-DQ0 Figure 0a: Functional Block Diagram Pin Assignments 32-Lead PLCC A12 A15 A16 A18 VDD WE# A17 32 31 30 29 A14 6 28 A13 A5 7 27 A8 A4 8 26 A9 25 A11 A7 5 A6 4 3 2 1 32-Lead PLCC Top View A3 9 A2 10 24 OE# A1 11 23 A10 A0 12 22 DQ0 13 21 14 15 16 17 18 19 20 CE# DQ7 DQ1DQ2 VSS DQ3DQ4DQ5DQ6 Figure 0b: PLCC Pin Assignments This specification is subject to change without further notice. (07.22.2004 V1.0) Page 2 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION 32-Lead TSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 A11 A9 A8 A13 A14 A17 W E# V DD A18 A16 A15 A12 A7 A6 A5 A4 Standard TSOP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 V SS DQ2 DQ1 DQ0 A0 A1 A2 A3 Figure 0c: TSOP Pin Assignments Pin Description Pin Name Function A0–A18 19 addresses DQ7–DQ0 Data inputs/outputs CE# Chip enable OE# Output enable WE# Write enable VDD 3.0 volt-only single power supply* VSS Device ground *See Appendix for ordering information on speed options and voltage supply tolerances. Table 1: Pin Description This specification is subject to change without further notice. (07.22.2004 V1.0) Page 3 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Device Operation The EM39LV040 uses Commands to initiate the memory operation functions. The Commands are written to the device by asserting WE# Low while keeping CE# Low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Read The Read operation of the EM39LV040 is controlled by CE# and OE#. Both have to be Low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read Cycle Timing Diagram in Figure 1 for further details. Byte Program The EM39LV040 is programmed on a byte-by-byte basis. Before programming, the sector where the byte is located; must be erased completely. The Program operation is accomplished in three steps: The first step is a three-byte load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last; and the data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Pro gram operation, once initiated, will be completed within 16 µs. See Figures 2 and 3 for WE# and CE# controlled Program operation timing diagrams respectively and Figure 12 for the corresponding flowchart. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any command issued during the internal Program operation is ignored. This specification is subject to change without further notice. (07.22.2004 V1.0) Page 4 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION EM39LV040 Device Operation Operation CE# OE# WE# DQ Address Read VIL VIL VIH DOUT AIN Program VIL VIH VIL DIN AIN Erase VIL VIH VIL X* Sector or Block address, XXH for Chip-Erase Standby VIH X X High Z X Write Inhibit X VIL X High Z/DOUT X Write Inhibit X X VIH High Z/DOUT X Software Mode VIL VIL VIH See Table 3 Product Identification * X can be VIL or VIH, but no other value. Table 2: EM39LV040 Device Operation Write Command/Command Sequence The EM39LV040 provides two software methods to detect the completion of a Program or Erase cycle in order to optimize the system write cycle time. The software detection includes two status bits: Data# Polling (DQ7) and Toggle Bit (DQ6). The End-of-Write detection mode is enabled after the rising edge of WE#, which initiates the internal Program or Erase operation. The actual completion of the write operation is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneously completed with the write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent such spurious rejection, when an erroneous result occurs, the software routine should include an additional two times loop to read the accessed location. If both reads are valid, then the device has completed the write cycle, otherwise the rejection is valid. Chip Erase The EM39LV040 provides Chip-Erase feature, which allows the entire memory array to be erased to logic “1” state. The Chip-Erase operation is initiated by executing a six-byte command sequence with Chip-Erase command (10H) at address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid reads are Toggle Bit and Data# Polling. See Table 3 for the command sequence, Figure 6 for timing diagram, and Figure 15 for the corresponding flowchart. Any command issued during the Chip-Erase operation is ignored. This specification is subject to change without further notice. (07.22.2004 V1.0) Page 5 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Sector Erase The EM39LV040 offers Sector-Erase mode. The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated by executing a six-byte command sequence with Sector-Erase command (30H) and Sector Address (SA) in the last bus cycle. The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase operation can be determined by using either Data# Polling or Toggle Bit method. See Figures 7 for timing waveforms. Any command issued during the Sector-Erase operation is ignored. Data# Polling (DQ7) When the EM39LV040 is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce the true data. Note that even though DQ7 may have valid data immediately following the completion of an internal Program operation, the remaining data outputs may still be invalid (valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs). During internal Erase operation, any attempt to read DQ7 will produce a “0”. Once the internal Erase operation is completed, DQ7 will produce a “1”. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-Erase or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 4 for Data# Polling timing diagram and Figure 13 for the corresponding flowchart. Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. When the internal Program or Erase operation is completed, the DQ6 bit will stop toggling. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector-Erase or Chip-Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 5 for Toggle Bit timing diagram and Figure 13 for the corresponding flowchart. Data Protection The EM39LV040 provides both hardware and software features to protect the data from inadvertent write. This specification is subject to change without further notice. (07.22.2004 V1.0) Page 6 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Hardware Data Protection Noise/Glitch Protection: VDD Power Up/Down Detection: Write Inhibit Mode: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. The Write operation is inhibited when VDD is less than 1.5V. Forcing OE# Low, CE# High, or WE# High will inhibit the Write operation. This prevents inadvertent write during power-up or power-down. Software Data Protection (SDP) The EM39LV040 provides the JEDEC approved Software Data Protection (SDP) scheme for Program and Erase operations. Any Program operation requires the inclusion of the three-byte sequence. The three-byte load sequence is used to initiate the Program operation, providing optimal protection from inadvertent Write operations, especially during the system power-up or power-down transition. Any Erase operation requires the inclusion of six-byte sequence. See Table 3 below for the specific software command codes. During SDP command sequence, invalid commands will abort the device to Read mode within TRC. Software Command Sequence Command Sequence 1st Bus Write Cycle 2nd Bus Write Cycle 3rd Bus Write Cycle 4th Bus Write Cycle 5th Bus Write Cycle 6th Bus Write Cycle Addr1 Addr1 Addr1 Addr1 Addr1 Data Addr1 Data Data Data Data 2 Data Byte Program 5555H AAH 2AAAH 55H 5555H A0H BA Sector Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SAX3 30H Chip Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H Software ID Entry4 5555H AAH 2AAAH 55H 5555H 90H Manufacture ID 5555H AAH 2AAAH 55H 5555H 90H 0000H 7FH Manufacture ID 5555H AAH 2AAAH 55H 5555H 90H 0003H 7FH Manufacture ID 5555H AAH 2AAAH 55H 5555H 90H 0040H 1FH 2AAAH 55H 5555H 90H 0001H 29FH 2AAAH 55H 5555H F0H Device ID 5555H AAH Software ID Exit 5 XXH F0H Software ID Exit 5 5555H AAH Data Notes: 1. Address format A18-A0 (Hex) & Address A16 can be VIL or VIH, (but no other value) for the Command sequence. 2. BA = Program byte address. 3. SAX for Sector-Erase; uses A19-A12 address lines. 4. The device does not remain in Software Product ID mode if powered down (see Figure 9 for more information). 5. Both Software ID Exit operations are equivalent. Table 3: Software Command Sequence This specification is subject to change without further notice. (07.22.2004 V1.0) Page 7 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Absolute Maximum Ratings NOTE Applied conditions greater than these specified ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this specification, are not implied. Exposure to absolute maximum stress rating condition may affect device reliability. Temperature Under Bias ..............................................................–55°C to 125°C Storage Temperature ....................................................................–65°C to 150°C D.C. Voltage on Any Pin to Ground Potential ...............................–0.5 V to VDD+0.5V Transient Voltage (<20ns) on Any Pin to Ground Potential ...........–2.0V to VDD +2.0V Voltage on A9 Pin to Ground Potential...........................................–0.5 V to 13.2V Package Power Dissipation Capability (Ta=25°C).........................1.0W Surface Mount Lead Soldering Temperature (3 Seconds) ............240°C Output Short Circuit Current * ........................................................50mA * Output shorted for no more than one second. No more than one output shorted at a time. Operating Range Model Name Range Ambient Temperature Commercial 0°C to +70°C VDD Full voltage range: 2.7~3.6V Regulated voltage range: 3.0~3.6V AC39LV040 Industrial –40°C to +85°C Full voltage range: 2.7~3.6V Regulated voltage range: 3.0~3.6V Table 4: Operating Range AC Conditions for Testing Input Rise/Fall Time........................................................................5ns Output Load....................................................................................CL=30pF for 45Rns Output Load....................................................................................CL=100pF for 70ns/90ns See Figures 10 and 11 for more details. This specification is subject to change without further notice. (07.22.2004 V1.0) Page 8 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION DC CHARACTERISTICS (CMOS Compatible) Parameter Description Test Conditions Power Supply Current IDD Min Max Unit Address Input =VIL/VIH, at f=1/TRC Min, VDD=VDD Max Read CE#=OE#=VIL, WE#=VIH, all I/Os open 20 mA Program and Erase CE#=WE#=VIL, OE#=VIH, 30 mA ISB Standby VDD Current CE#=VIHC, VDD=VDD Max 10 µA ILI Input Leakage Current VIN=GND to VDD, VDD=VDD Max 1 µA ILO Output Leakage Current VOUT=GND to VDD, VDD=VDD Max 10 µA VIL Input Low Voltage VDD=VDD Min 0.8 V VIH Input High Voltage VDD=VDD Max 0.7 VDD V VIHC Input High Voltage (CMOS) VDD=VDD Max VDD-0.3 V VOL Output Low Voltage IOL=100µA, VDD=VDD Min VOH Output High Voltage IOH=-100µA, VDD=VDD Min 0.2 VDD-0.2 V V Table 5: DC Characteristics (Cmos Compatible) Recommended System Power-up Timing Parameter TPU-READ* TPU-WRITE* Description Min Unit Power-up to Read Operation 100 µs Power-up to Program/Erase Operation 100 µs * This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 6: Recommended System Power-up Timing Capacitance (Ta = 25°C, f = 1Mhz, other pins open) Parameter Description CI/O* CIN* Test Conditons Max I/O Pin Capacitance VI/O=0V 12pF Input Capacitance VIN=0V 6pF * This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 7: Capacitance (Ta = 25°C, f = 1Mhz, Other Pins Open) Reliability Characteristics Symbol Parameter Min Specification Unit Test Method NEND* TDR* Endurance 10,000 Cycles JEDEC Standard A117 Data Retention 10 Years JEDEC Standard A103 ILTH* Latch Up 100+IDD mA JEDEC Standard 78 * This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 8: Reliability Characteristics This specification is subject to change without further notice. (07.22.2004 V1.0) Page 9 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION AC Characteristics Read Cycle Timing Parameters Symbol 45REC Parameter 55REC 70REC 90REC Min Max Min Max Min Max Min Max 45 55 TRC Read Cycle Time TCE Chip Enable Access Time 45 55 70 90 ns TAA Address Access Time 45 55 70 90 ns TOE TCLZ* Output Enable Access Time 30 30 35 45 ns CE# Low to Active Output 0 0 0 0 ns TOLZ* TCHZ* OE# Low to Active Output 0 0 0 0 ns CE# High to High-Z Output 15 15 25 30 ns TOHZ* OE# High to High-Z Output 15 15 25 30 ns TOH* Output Hold from Address Change 0 0 70 0 0 90 Unit ns 0 ns * This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 9: Read Cycle Timing Parameters Program/Erase Cycle Timing Parameter Symbol Parameter Min Max Unit 16 µs TBP Byte-Program Time TAS Address Setup Time 0 ns TAH Address Hold Time 30 ns TCS WE# and CE# Setup Time 0 ns TCH WE# and CE# Hold Time 0 ns TOES OE# High Setup Time 0 ns TOEH OE# High Hold Time 10 ns TCP CE# Pulse Width 40 ns TWP WE# Pulse Width 40 ns TWPH* WE# Pulse Width High 30 ns TCPH* CE# Pulse Width High 30 ns TDS TDH* Data Setup Time 40 ns Data Hold Time 0 ns TIDA* Software ID Access and Exit Time 150 ns TSE Sector Erase 60 ms TSCE Chip Erase 60 ms * This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Table 10: Program/Erase Cycle Timing Parameter This specification is subject to change without further notice. (07.22.2004 V1.0) Page 10 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Timing Diagrams Read Cycle Timing Diagram TRC TAA A18~A0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# TCHZ TOH TCLZ HIGH-Z Data Valid DQ7-0 Data Valid HIGH-Z Figure 1: Read Cycle Timing Diagram WE# Controlled Program Cycle Timing Diagram Internal Program Operation Starts TBP A18~A0 5555 2AAA 5555 ADDR TAH WE# TDH TWP TWPH TDS TAS OE# TCH CE# TCS DQ7-0 AA 55 A0 SW0 SW1 SW2 DATA Byte (ADDR/DATA) Figure 2: WE# Controlled Program Cycle Timing Diagram This specification is subject to change without further notice. (07.22.2004 V1.0) Page 11 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION CE# Controlled Program Cycle Timing Diagram Internal Program Operation Starts TBP A18~A0 5555 2AAA 5555 ADDR TAH CE# TDH TCP TCPH TDS TAS OE# TCH WE# TCS DQ7-0 AA 55 A0 SW0 SW1 SW2 DATA Byte (ADDR/DATA) Figure 3: CE# Controlled Program Cycle Timing Diagram Data# Polling Timing Diagram A18~A0 TCE CE# TOEH TOES OE# TOE WE# DQ7 DATA DATA# DATA# DATA# Figure 4: Data# Polling Timing Diagram This specification is subject to change without further notice. (07.22.2004 V1.0) Page 12 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Toggle Bit Timing Diagram A18~A0 TCE CE# TOEH TOES TOE OE# WE# DQ6 Two Read Cycles With Same Outputs Figure 5: Toggle Bit Timing Diagram WE# Controlled Chip-Erase Timing Diagram TSCE Six-Byte Code For Chip-Erase A18~A0 5555 2AAA 5555 5555 2AAA 5555 CE# OE# TWP WE# DQ7-0 AA SW0 55 SW1 80 SW2 AA SW3 55 SW4 10 SW5 Note: This device also supports CE# controlled Chip-Erase operation. The WE#and CE# signals are interchageable as long as minimum timings are met. (See Table 10) Figure 6: WE# Controlled Chip-Erase Timing Diagram This specification is subject to change without further notice. (07.22.2004 V1.0) Page 13 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION WE# Controlled Sector-Erase Timing Diagram TSE Six-Byte Code For Block-Erase 2AAA 5555 A18~A0 5555 5555 2AAA SAX CE# OE# TWP WE# AA SW0 DQ7-0 55 SW1 80 SW2 AA SW3 55 SW4 50 SW5 Note: This device also supports CE# controlled Sector-Erase operation. The WE#and CE# signals are interchageable as long as minimum timings are met. (See Table 10) SAX=Sector Address X can be VIL or VIH, but no other value. Figure 7: WE# Controlled Sector-Erase Timing Diagram Software ID Entry/Exit and Read Software ID Entry and Read Three-Byte Sequence For Software ID Entry Address A14-0 5555 2AAA 5555 0000H 0003H 0040H 0001H CE# OE# T IDA T WP W E# T AA T W PH DQ7-0 AA SW 0 55 SW 1 90 7F 7F 1F 29h SW 2 Figure 8: Software ID Entry and Read This specification is subject to change without further notice. (07.22.2004 V1.0) Page 14 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Software ID Exit and Reset Three-Byte Sequence For Software ID Exit and Reset Address A14-0 DQ7-0 2AAA 5555 5555 55 AA F0 T IDA CE# OE# TW P W E# SW 0 T W PH SW 1 SW 2 Figure 9: Software ID Exit and Reset AC Input/Output Testing AC Input/Output Reference Waveforms VIHT Input VIT Reference Points VOT Output VILT AC test inputs are driven at VIHT (0.9 VDD) for a logic "1" and VILT(0.1 VDD) for a logic "0". Measurement reference points for inputs and outpputs are VIT(0.5 VDD) and VOT(0.5 VDD). Input rise and fall time (10% - 90% ) is <5ns Note: VIT = Vinput Test VOT = Voutput Test VIHT = Vinput HIGH Test VILT = Vinput LOW Test Figure 10: AC Input/Output Reference Waveforms This specification is subject to change without further notice. (07.22.2004 V1.0) Page 15 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION An AC Test Load Example TO TESTER TO DUT CL Figure 11: An AC Test Load Example Flow Charts Byte-Program Algorithm Start Load Data: AAH Address: 5555H Load Data: 55H Address: 2AAAH Load Data: A0H Address: 5555H Load Byte Address/Byte Data W ait for end of Program (T BP , Data# Polling bit, or Toggle bit operation) Program Com pleted Figure 12: Byte-Program Algorithm Flowchart This specification is subject to change without further notice. (07.22.2004 V1.0) Page 16 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Wait Options Internal Tim er Toggle Bit Data# Polling Progrm /Erase Initiated Progrm/Erase Initiated Progrm /Erase Initiated W ait T BP , T SCE , T SE or T BE Read Byte Read DQ7 Progrm /Erase Com pleted Read Sam e Byte Is DQ7=true data? No Yes Does DQ6 m atch? No Progrm /Erase Com pleted Yes Progrm/Erase Com pleted Figure 13: Wait Options Flowchart This specification is subject to change without further notice. (07.22.2004 V1.0) Page 17 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Software ID Commands Software ID Entry Comm and Sequence Software ID Exit Comm and Sequence Load Data: AAH Address: 5555H Load Data: AAH Address: 5555H Load Data: F0H Address: XXH Load Data: 55H Address: 2AAAH Load Data: 55H Address: 2AAAH W ait T IDA Load Data: 90H Address: 5555H Load Data: F0H Address: 5555H Return to Norm al Operation W ait T IDA W ait T IDA Read Software ID Return to Norm al Operation X can be VIL or VIH, but no other value. Figure 14: Software ID Command Flowcharts This specification is subject to change without further notice. (07.22.2004 V1.0) Page 18 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Erase Command Sequence Chip-Erase Com m and Sequence Sector-Erase Com mand Sequence Load Data: AAH Address: 5555H Load Data: AAH Address: 5555H Load Data: 55H Address: 2AAAH Load Data: 55H Address: 2AAAH Load Data: 80H Address: 5555H Load Data: 80H Address: 5555H Load Data: AAH Address: 5555H Load Data: AAH Address: 5555H Load Data: 55H Address: 2AAAH Load Data: 55H Address: 2AAAH Load Data: 10H Address: 5555H Load Data: 30H Address: SA X W ait T SCE W ait T SE Chip Erased to FFH Sector Erased to FFH X can be VIL or VIH, but no other value. Figure 15: Erase Command Sequence Flowchart This specification is subject to change without further notice. (07.22.2004 V1.0) Page 19 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION Appendix ORDERING INFORMATION (Standard Products) The order number is defined by a combination of the following elements. EM39LV040 -70 F M C Description Temperature Range (1 digit) C = Commercial (0°C to +70°C) I = Industrial (-40°C to +85°C) Package Type (1-3 digit) M = TSOP (Type 1, die up, 8mm x 14mm) L = 32-pin PLCC H = Chip Form D = Known Good Dice (for wafer dice sell) F = PB (Lead) free package Speed Option (2-3 digits) 45R = 45ns 55 = 55ns 70 = 70ns 90 = 90ns ** = VDD = 2.7~3.6V Full voltage range **R = VDD = 3.0~3.6V Regulated voltage range Device Number/Description EM39LV040 4 Megabit (512K x 8-Bit) Flash Memory This specification is subject to change without further notice. (07.22.2004 V1.0) Page 20 of 21 EM39LV040 4M (512Kx8) Bits Flash Memory SPECIFICATION ORDERING INFORMATION (Non-Standard Products) For Known Good Dice (KGD), please contact ELAN Microelectronics at the following contact information or its representatives. ELAN MICROELECTRONICS CORPORATION Headquarters: Hong Kong: USA: No. 12, Innovation Road 1 Science-based Industrial Park Hsinchu, Taiwan, R.O.C. 30077 Tel: +886 3 563-9977 Fax: +886 3 563-9966 http://www.emc.com.tw Elan (HK) Microelectronics Corporation, Ltd. Elan Information Technology Group Rm. 1005B, 10/F Empire Centre 68 Mody Road, Tsimshatsui Kowloon , HONG KONG Tel: +852 2723-3376 Fax: +852 2723-7780 [email protected] 1821 Saratoga Ave., Suite 250 Saratoga, CA 95070 USA Tel: +1 408 366-8223 Fax: +1 408 366-8220 Europe: Shenzhen: Shanghai: Elan Microelectronics Corp. (Europe) Elan (Shenzhen) Microelectronics Corp., Ltd. Elan Electronics (Shanghai) Corporation, Ltd. Dubendorfstrasse 4 8051 Zurich, SWITZERLAND Tel: +41 43 299-4060 Fax: +41 43 299-4079 http://www.elan-europe.com SSMEC Bldg., 3F, Gaoxin S. Ave. Shenzhen Hi-Tech Industrial Park Shenzhen, Guandong, CHINA Tel: +86 755 2601-0565 Fax: +86 755 2601-0500 23/Bldg. #115 Lane 572, Bibo Road Zhangjiang Hi-Tech Park Shanghai, CHINA Tel: +86 021 5080-3866 Fax: +86 021 5080-4600 This specification is subject to change without further notice. (07.22.2004 V1.0) Page 21 of 21