2 Megabit (256K x 8) Multi-Purpose Flash SST39SF020 Preliminary Specifications FEATURES: • Organized as 256 K X 8 • Single 5.0V Read and Write Operations • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Current: 20 mA (typical) – Standby Current: 10 µA (typical) • Sector Erase Capability – Uniform 4 KByte sectors • Fast Read Access Time: – 70 and 90 ns • Latched Address and Data • Fast Sector Erase and Byte Program: – Sector Erase Time: 7 ms (typical) – Chip Erase Time: 15 ms (typical) – Byte Program time: 20 µs (typical) – Chip Rewrite Time: 5 seconds (typical) • Automatic Write Timing - Internal Vpp Generation • End of Write Detection – Toggle Bit – Data# Polling • TTL I/O Compatibility • JEDEC Standard – EEPROM Pinouts and command set • Packages Available – 32-Pin PDIP – 32-Pin PLCC – 32-Pin TSOP (8mm x 14mm) Featuring high performance byte program, the SST39SF020 device provides a maximum byte-program time of 30 µsec. The entire memory can be erased and programmed byte by byte typically in 5 seconds, when using interface features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. To protect against inadvertent write, the SST39SF020 device has on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39SF020 device is offered with a guaranteed endurance of 10,000 cycles. Data retention is rated at greater than 100 years. The SST39SF020 device is suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, the SST39SF020 device significantly improves performance and reliability, while lowering power 2 3 4 5 6 7 PRODUCT DESCRIPTION The SST39SF020 is a 256K x 8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF020 device writes (Program or Erase) with a 5.0V-only power supply. The SST39SF020 device conforms to JEDEC standard pinouts for x8 memories. 1 consumption. The SST39SF020 inherently uses less energy during erase and program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. The SST39SF020 device also improves flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of endurance cycles that have occurred. Therefore the system software or hardware does not have to be modified or derated as is necessary with alternative flash technologies, whose erase and program times increase with accumulated endurance cycles. To meet high density, surface mount requirements, the SST39SF020 device is offered in 32-pin TSOP and 32pin PLCC packages. A 600 mil, 32-pin PDIP is also available. See Figures 1 and 2 for pinouts. Device Operation Commands are used to initiate the memory operation functions of the device. Commands are written to the device using standard microprocessor write sequences. A command is written by asserting WE# low while © 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon storage Technology, Inc. 326-10 12/98 These specifications are subject to change without notice. 1 8 9 10 11 12 13 14 15 16 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first. Chip-Erase Operation The SST39SF020 device provides a Chip-Erase operation, which allows the user to erase the entire memory array to the “1’s” state. This is useful when the entire device must be quickly erased. Read The Read operation of the SST39SF020 device is controlled by CE# and OE#, both have to be low for the system to obtain data from the outputs. CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is consumed. OE# is the output control and is used to gate data from the output pins. The data bus is in high impedance state when either CE# or OE# is high. Refer to the Read cycle timing diagram for further details (Figure 3). The Chip Erase operation is initiated by executing a sixbyte software data protection command sequence with Chip Erase command (10H) with address 5555H in the last byte sequence. The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. During the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command sequence, Figure 9 for timing diagram, and Figure 17 for the flowchart. Any commands written during the Chip Erase operation will be ignored. Byte Program Operation The SST39SF020 device is programmed on a byte-bybyte basis. The Program operation consists of three steps. The first step is the three-byte-load sequence for Software Data Protection. The second step is to load byte address and byte data. During the Byte Program operation, the addresses are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is latched on the rising edge of either CE# or WE#, whichever occurs first. The third step is the internal Program operation which is initiated after the rising edge of the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated, will be completed, within 30 µs. See Figures 4 and 5 for WE# and CE# controlled Program operation timing diagrams and Figure 14 for flowcharts. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform additional tasks. Any commands written during the internal Program operation will be ignored. Write Operation Status Detection The SST39SF020 device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system write cycle time. The software detection includes two status bits : Data# Polling (DQ7) and Toggle Bit (DQ6). The end of write detection mode is enabled after the rising edge of WE# which initiates the internal program or erase cycle. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ7 or DQ6. In order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid. Data# Polling (DQ7) When the SST39SF020 device is in the internal Program operation, any attempt to read DQ7 will produce the complement of the true data. Once the Program operation is completed, DQ7 will produce true data. The device is then ready for the next operation. During internal Erase operation, any attempt to read DQ7 will produce a ‘0’. Once the internal Erase operation is completed, DQ7 will produce a ‘1’. The Data# Polling is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For sector or chip erase, the Data# Polling is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 6 for Data# Polling timing diagram and Figure 15 for a flowchart. Sector Erase Operation The Sector Erase operation allows the system to erase the device on a sector by sector basis. The sector architecture is based on uniform sector size of 4 KByte. The Sector Erase operation is initiated by executing a six-byte-command load sequence for software data protection with sector erase command (30H) and sector address (SA) in the last bus cycle. The address lines A12-A17 will be used to determine the sector address. The sector address is latched on the falling edge of the sixth WE# pulse , while the command (30H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins after the sixth WE# pulse. The end of Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 8 for timing waveforms. Any commands written during the Sector Erase operation will be ignored. © 1998 Silicon Storage Technology, Inc. 2 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Toggle Bit (DQ6) During the internal Program or Erase operation, any consecutive attempts to read DQ6 will produce alternating 0’s and 1’s, i.e., toggling between 0 and 1. The Toggle Bit will begin with “1”. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# (or CE#) pulse for Program operation. For Sector or Chip Erase, the Toggle Bit is valid after the rising edge of sixth WE# (or CE#) pulse. See Figure 7 for Toggle Bit timing diagram and Figure 15 for a flowchart. or power-down. Any Erase operation requires the inclusion of six byte load sequence. The SST39SF020 device is shipped with the software data protection permanently enabled. See Table 4 for the specific software command codes. During SDP command sequence, invalid commands will abort the device to read mode, within TRC. Product Identification The product identification mode identifies the device as the SST39SF020 and manufacturer as SST. This mode may be accessed by hardware or software operations. The hardware operation is typically used by a programmer to identify the correct algorithm for the SST39SF020 device. Users may wish to use the software product identification operation to identify the part (i.e., using the device code) when using multiple manufacturers in the same socket. For details, see Table 3 for hardware operation or Table 4 for software operation, Figure 10 for the software ID entry and read timing diagram and Figure 16 for the ID entry command sequence flowchart. Data Protection The SST39SF020 device provides both hardware and software features to protect nonvolatile data from inadvertent writes. Hardware Data Protection Noise/Glitch Protection: A WE# or CE# pulse of less than 5 ns will not initiate a write cycle. TABLE 1: PRODUCT IDENTIFICATION TABLE VCC Power Up/Down Detection: The write operation is inhibited when VCC is less than 2.5V. Write Inhibit Mode: Forcing OE# low, CE# high, or WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down. Address Data Manufacturer’s Code 0000H BF H Device Code 0001H B6 H 1 2 3 4 5 6 7 8 326 PGM T1.2 Product Identification Mode Exit/Reset In order to return to the standard read mode, the Software Product Identification mode must be exited. Exiting is accomplished by issuing the Exit ID command sequence, which returns the device to the Read operation. Please note that the software reset command is ignored during an internal Program or Erase operation. See Table 4 for software command codes, Figure 11 for timing waveform and Figure 16 for a flowchart. Software Data Protection (SDP) The SST39SF020 provides the JEDEC approved software data protection scheme for all data alteration operations, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three byte sequence. The three byte-load sequence is used to initiate the Program operation, providing optimal protection from inadvertent write operations, e.g., during the system power-up 9 10 11 12 FUNCTIONAL BLOCK DIAGRAM OF SST39SF020 X-Decoder 13 2,097,152 bit EEPROM Cell Array 14 A17 - A0 Address Buffers & Latches Y-Decoder 15 CE# OE# I/O Buffers and Data Latches Control Logic 16 WE# DQ7 - DQ0 326 ILL B1.3 © 1998 Silicon Storage Technology, Inc. 3 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications A11 A9 A8 A13 A14 A17 WE# VCC NC A16 A15 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 Standard Pinout Top View Die Up 326 ILL F01.0 VCC 4 3 2 1 32 31 30 29 A17 NC A6 A16 5 A15 A7 28 A13 A5 7 27 A8 A4 8 26 A9 A3 9 25 A11 A2 10 24 OE# A1 11 23 A10 A0 12 22 CE# DQ0 13 21 14 15 16 17 18 19 20 DQ7 DQ5 DQ4 DQ3 32-Lead PLCC Top View DQ6 A14 6 VSS VCC WE# A17 A14 A13 A8 A9 A11 OE# A10 CE# DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A12 1 2 3 4 5 32-Pin 6 PDIP 7 8 Top View 9 10 11 12 13 14 15 16 DQ1 NC A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS WE# FIGURE 1: PIN ASSIGNMENTS FOR 32-PIN TSOP PACKAGES (8mm x 14mm) 326 ILL F02.0 FIGURE 2: PIN ASSIGNMENTS FOR 32-PIN PDIPS AND 32-LEAD PLCCS © 1998 Silicon Storage Technology, Inc. 4 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications TABLE 2: PIN DESCRIPTION Symbol Pin Name A17-A0 Address Inputs DQ7-DQ0 CE# OE# WE# Vcc Vss NC Functions To provide memory addresses. During sector erase A17-A12 address lines will select the sector. To output data during read cycles and receive input data during write cycles. Data is internally latched during a write cycle. The outputs are in tri-state when OE# or CE# is high. To activate the device when CE# is low. To gate the data output buffers. To control the write operations. To provide 5-volt supply (± 10%) Data Input/output Chip Enable Output Enable Write Enable Power Supply Ground No Connection TABLE 3: OPERATION MODES SELECTION Mode CE# OE# Read VIL VIL Program VIL VIH Erase VIL VIH Product Identification Hardware Mode Software Mode 2 3 4 Unconnected pins. 326 PGM T2.1 Standby Write Inhibit 1 WE# VIH VIL VIL A9 AIN AIN X DQ DOUT DIN X VIH X X X VIL X X X VIH X X X High Z High Z/DOUT High Z/DOUT Address AIN AIN Sector address, XXh for chip erase X X X VIL VIL VIH VH VIL VIL VIH AIN Manufacturer Code (BF) Device Code (B6) ID Code A17 - A1 = VIL, A0 = VIL A17 - A1 = VIL, A0 = VIH See Table 4 5 6 7 8 9 10 326 PGM T3.4 11 12 13 14 15 16 © 1998 Silicon Storage Technology, Inc. 5 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications TABLE 4: SOFTWARE COMMAND SEQUENCE Command Sequence 1st Bus Write Cycle Addr(1) Data Byte Program 5555H AAH Sector Erase 5555H AAH Chip Erase 5555H AAH Software ID Entry 5555H AAH Software ID Exit XXH F0H Software ID Exit 5555H AAH 2nd Bus Write Cycle Addr(1) Data 2AAAH 55H 2AAAH 55H 2AAAH 55H 2AAAH 55H 3rd Bus Write Cycle Addr(1) Data 5555H A0H 5555H 80H 5555H 80H 5555H 90H 2AAAH 5555H 55H 4th Bus Write Cycle Addr(1) Data BA(3) Data 5555H AAH 5555H AAH 5th Bus Write Cycle Addr(1) Data 6th Bus Write Cycle Addr(1) Data 2AAAH 2AAAH SAx(2) 30H 5555H 10H 55H 55H F0H 326 PGM T4.0 Notes: (1) Address format A14-A0 (Hex), Addresses A15, A16 and A17 are a “Don’t Care” for the Command sequence. (2) SA for sector erase; uses A -A x 17 12 address lines (3) BA = Program Byte address (4) Both Software ID Exit operations are equivalent Notes for Software ID Entry Command Sequence 1. With A17 -A1 =0; SST Manufacturer Code = BFH, is read with A0 = 0, SST39SF020 Device Code = B6H, is read with A0 = 1. 2. The device does not remain in Software Product ID Mode if powered down. © 1998 Silicon Storage Technology, Inc. 6 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Temperature Under Bias ................................................................................................................. -55°C to +125°C Storage Temperature ...................................................................................................................... -65°C to +150°C D. C. Voltage on Any Pin to Ground Potential ............................................................................. -0.5V to VCC+ 0.5V Transient Voltage (<20 ns) on Any Pin to Ground Potential ......................................................... -1.0V to VCC+ 1.0V Voltage on A9 Pin to Ground Potential ................................................................................................ -0.5V to 14.0V Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W Through Hole Lead Soldering Temperature (10 Seconds) .............................................................................. 300°C Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C Output Short Circuit Current(1) ............................................................................................................................................................... 100 mA 1 2 3 4 Note: (1) Outputs shorted for no more than one second. No more than one output shorted at a time. 5 OPERATING RANGE Range Ambient Temp Commercial 0 °C to +70 °C Industrial -40 °C to +85 °C AC CONDITIONS OF TEST 6 Input Rise/Fall Time ......... 10 ns Output Load ..................... CL = 100 pF for 90 ns Output Load ..................... CL = 30 pF for 70 ns See Figures 12 and 13 7 VCC 5V±10% 5V±10% 8 9 10 11 12 13 14 15 16 © 1998 Silicon Storage Technology, Inc. 7 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications TABLE 5: DC OPERATING CHARACTERISTICS VCC = 5V±10% Limits Symbol Parameter Min Max ICC Power Supply Current Read Write ISB1 Standby VCC Current (TTL input) ISB2 Standby VCC Current (CMOS input) ILI Input Leakage Current ILO Output Leakage Current VIL Input Low Voltage VIH Input High Voltage VOL Output Low Voltage VOH Output High Voltage VH Supervoltage for A9 pin IH Supervoltage Current for A9 pin Units 30 mA 50 3 mA mA 50 µA 1 1 0.8 µA µA V V V V V µA 2.0 0.4 2.4 11.4 12.6 200 Test Conditions CE#=OE#=VIL,WE#=VIH , all I/Os open, Address input = VIL/VIH, at f=1/TRC Min., VCC=VCC Max CE#=WE#=VIL, OE#=VIH, VCC =VCC Max. CE#=VIH, VCC =VCC Max. CE#=VCC -0.3V. VCC = VCC Max. VIN =GND to VCC, VCC = VCC Max. VOUT =GND to VCC, VCC = VCC Max. VCC = VCC Max. VCC = VCC Max. IOL = 2.1 mA, VCC = VCC Min. IOH = -400µA, VCC = VCC Min. CE# = OE# =VIL, WE# = VIH CE# = OE# = VIL, WE# = VIH, A9 = VH Max. 326 PGM T5.2 TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter TPU-READ(1) TPU-WRITE(1) Power-up to Read Operation Power-up to Write Operation Minimum Units 100 100 µs µs 326 PGM T6.1 TABLE 7: CAPACITANCE (Ta = 25 °C, f=1 Mhz, other pins open) Parameter Description Test Condition (1) CI/O CIN(1) I/O Pin Capacitance Input Capacitance Maximum VI/O = 0V VIN = 0V 12 pF 6 pF 326 PGM T7.0 Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. TABLE 8: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification (1) NEND TDR(1) VZAP_HBM(1) VZAP_MM(1) ILTH(1) Endurance Data Retention ESD Susceptibility Human Body Model ESD Susceptibility Machine Model Latch Up Units Test Method 10,000 100 1000 Cycles Years Volts MIL-STD-883, Method 1033 JEDEC Standard A103 JEDEC Standard A114 200 Volts 100 + ICC mA JEDEC Standard A115 JEDEC Standard 78 326 PGM T8.3 Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. © 1998 Silicon Storage Technology, Inc. 8 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications AC CHARACTERISTICS TABLE 9: READ CYCLE TIMING PARAMETERS VCC = 4.5-5.5V SST39SF020-70 SST39SF020-90 Symbol Parameter Min Max Min Max TRC Read Cycle time 70 90 TCE Chip Enable Access Time 70 90 TAA Address Access Time 70 90 TOE Output Enable Access Time 35 45 (1) TCLZ CE# Low to Active Output 0 0 TOLZ(1) OE# Low to Active Output 0 0 TCHZ(1) CE# High to High-Z Output 15 20 (1) OE# High to High-Z Output 15 20 TOHZ TOH(1) Output Hold from Address Change 0 0 Units ns ns ns ns ns ns ns ns ns 2 3 4 5 326 PGM T9.2 Note: CL = 100 pF for 90 ns, CL = 30 pF for 70 ns TABLE 10: PROGRAM/ERASE CYCLE TIMING PARAMETERS Symbol Parameter TBP Byte Program time TAS Address Setup Time TAH Address Hold Time TCS WE# and CE# Setup Time TCH WE# and CE# Hold Time TOES OE# High Setup Time TOEH OE# High Hold Time TCP CE# Pulse Width TWP WE# Pulse Width TWPH (1) WE# Pulse Width High TCPH (1) CE# Pulse Width High TDS Data Setup Time TDH (1) Data Hold Time TIDA (1) Software ID Access and Exit Time TSE Sector Erase TSCE Chip Erase 1 6 7 Min Max 30 0 30 0 0 0 0 40 40 30 30 30 0 150 10 20 Units µs ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 8 9 10 11 12 13 14 326 PGM T10.4 Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter. 15 16 © 1998 Silicon Storage Technology, Inc. 9 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications TRC TAA ADDRESS A17-0 TCE CE# TOE OE# TOHZ TOLZ VIH WE# DQ7-0 TCHZ TOH TCLZ HIGH-Z HIGH-Z DATA VALID DATA VALID 326 ILL F03.0 FIGURE 3: READ CYCLE TIMING DIAGRAM INTERNAL PROGRAM OPERATION STARTS TBP 5555 TAH ADDRESS A17-0 2AAA 5555 ADDR TDH TWP WE# TAS TDS TWPH OE# TCH CE# TCS DQ7-0 AA SW0 55 SW1 A0 SW2 DATA BYTE (ADDR/DATA) 326 ILL F04.3 FIGURE 4: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM © 1998 Silicon Storage Technology, Inc. 10 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications INTERNAL PROGRAM OPERATION STARTS 1 TBP 5555 TAH ADDRESS A17-0 2AAA 5555 ADDR 2 TDH TCP CE# TAS 3 TDS TCPH OE# 4 TCH WE# 5 TCS DQ7-0 AA SW0 55 SW1 A0 SW2 DATA 6 BYTE (ADDR/DATA) 326 ILL F05.3 7 FIGURE 5: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM 8 9 10 ADDRESS A17-0 TCE 11 CE# TOES TOEH OE# TOE 13 WE# DQ7 D D# D# 14 D 326 ILL F06.0 15 16 FIGURE 6: DATA# POLLING TIMING DIAGRAM © 1998 Silicon Storage Technology, Inc. 12 11 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications ADDRESS A17-0 TCE CE# TOES TOE TOEH OE# WE# DQ6 (1) TWO READ CYCLES WITH SAME OUTPUTS NOTE: (1) TOGLE BIT OUTPUT IS ALWAYS HIGH FIRST. 326 ILL F07.0 FIGURE 7: TOGGLE BIT TIMING DIAGRAM TSE SIX-BYTE CODE FOR SECTOR ERASE ADDRESS A17-0 5555 2AAA 5555 5555 2AAA SAX CE# OE# TWP WE# DQ7-0 AA 55 80 AA 55 SW0 SW1 SW2 SW3 SW4 30 SW5 326 ILL F08.4 Note: The device also supports CE# controlled sector erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 10) SAX = Sector Address FIGURE 8: WE# CONTROLLED SECTOR ERASE TIMING DIAGRAM © 1998 Silicon Storage Technology, Inc. 12 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications 5555 ADDRESS A17-0 2AAA 5555 5555 2AAA 1 TSCE SIX-BYTE CODE FOR CHIP ERASE 5555 2 CE# 3 OE# 4 TWP WE# 5 DQ7-0 AA 55 80 AA 55 SW0 SW1 SW2 SW3 SW4 10 SW5 6 326 ILL F17.1 7 Note: The device also supports CE# controlled chip erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 10) 8 FIGURE 9: WE# CONTROLLED CHIP ERASE TIMING DIAGRAM 9 Three-byte sequence for Software ID Entry ADDRESS A14-0 5555 2AAA 10 5555 0000 0001 11 CE# 12 OE# 13 TIDA TWP WE# TWPH DQ7-0 AA 55 SW0 SW1 14 TAA 90 BF B6 15 SW2 326 ILL F09.3 FIGURE 10: SOFTWARE ID ENTRY AND READ © 1998 Silicon Storage Technology, Inc. 13 326-10 12/98 16 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications THREE-BYTE SEQUENCE FOR SOFTWARE ID EXIT AND RESET ADDRESS A14-0 5555 DQ7-0 2AAA AA 5555 55 F0 TIDA CE# OE# TWP WE# T WHP SW0 SW1 SW2 326 ILL F10.0 FIGURE 11: SOFTWARE ID EXIT AND RESET © 1998 Silicon Storage Technology, Inc. 14 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications VIHT VHT INPUT 1 VHT REFERENCE POINTS OUTPUT VLT VLT 2 VILT 326 ILL F11.1 AC test inputs are driven at VIHT (2.4 V) for a logic “1” and VILT (0.4 V) for a logic “0”. Measurement reference points for inputs and outputs are VHT (2.0 V) and VLT (0.8 V). Inputs rise and fall times (10% ↔ 90%) are <10 ns. Note: VHT–VHIGH Test VLT–VLOW Test VIHT–VINPUT HIGH Test VILT–VINPUT LOW Test 3 4 5 FIGURE 12: AC INPUT/OUTPUT REFERENCE WAVEFORMS 6 7 TEST LOAD EXAMPLE 8 VCC 9 TO TESTER RL HIGH 10 11 TO DUT CL RL LOW 12 13 326 ILL F12.1 14 FIGURE 13: A TEST LOAD EXAMPLE 15 16 © 1998 Silicon Storage Technology, Inc. 15 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Start Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: A0 Address: 5555 Byte Address/Byte Data Wait for end of Program (TBP, Data# Polling bit, or Toggle bit operation) Program Completed 326 ILL F13.3 FIGURE 14: BYTE PROGRAM ALGORITHM © 1998 Silicon Storage Technology, Inc. 16 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications 1 Internal Timer Toggle Bit Data# Polling Program/Erase Initiated Byte Program/ Sector Erase Initiated Byte Program Initiated Read byte Read DQ7 2 3 4 Wait TBP, TSCE, or TSE 5 Read same byte Program/Erase Completed No 6 Is DQ7 = true data? 7 Yes No Does DQ6 match? 8 Write Completed 9 Yes 10 Write Completed 326 ILL F14.4 11 12 13 FIGURE 15: WAIT OPTIONS 14 15 16 © 1998 Silicon Storage Technology, Inc. 17 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Software Product ID Entry Command Sequence Software Product ID Exit & Reset Command Sequence Write data: AA Address: 5555 Write data: AA Address: 5555 Write data: F0 Address: XX Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Wait TIDA Write data: 90 Address: 5555 Write data: F0 Address: 5555 Return to normal operation Wait TIDA Wait TIDA Read Software ID Return to normal operation 326 ILL F15.1 FIGURE 16: SOFTWARE PRODUCT COMMAND FLOWCHARTS © 1998 Silicon Storage Technology, Inc. 18 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Chip Erase Command Sequence Sector Erase Command Sequence 1 Write data: AA Address: 5555 Write data: AA Address: 5555 2 3 Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Write data: 80 Address: 5555 Write data: 80 Address: 5555 4 5 6 Write data: AA Address: 5555 Write data: AA Address: 5555 Write data: 55 Address: 2AAA Write data: 55 Address: 2AAA Write data: 10 Address: 5555 Write data: 30 Address: SAX 7 8 9 10 11 Wait TSCE Wait TSE Chip Erase to FFH Sector Erase to FFH 12 13 14 326 ILL F16.0 15 FIGURE 17: ERASE COMMAND SEQUENCE 16 © 1998 Silicon Storage Technology, Inc. 19 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications Device SST39SF020 Speed Suffix1 Suffix2 - XXX XX XX Package Modifier H = 32 leads Numeric = Die modifier Package Type P = PDIP N = PLCC W = TSOP (die up) (8mm x 14mm) U = Unencapsulated die Temperature Range C = Commercial = 0° to 70°C I = Industrial = -40° to 85°C Minimum Endurance 4 = 10,000 cycles Read Access Speed 70 = 70 ns, 90 = 90 ns SST39SF020 Valid combinations SST39SF020-70-4C-WH SST39SF020-70-4C-NH SST39SF020-90-4C-WH SST39SF020-90-4C-NH SST39SF020-90-4C-U1 SST39SF020-70-4I-WH SST39SF020-90-4I-WH SST39SF020-70-4C-PH SST39SF020-90-4C-PH SST39SF020-70-4I-NH SST39SF020-90-4I-NH Example : Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. © 1998 Silicon Storage Technology, Inc. 20 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications PACKAGING DIAGRAMS 1 pin 1 index 1 2 CL 32 3 Optional Ejector Pin Indentation Shown for Conventional Mold Only .600 .625 .530 .550 1.645 1.655 .065 .075 4 7˚ 4 PLCS. .170 .200 Base Plane Seating Plane 5 0˚ 15˚ .015 .050 .070 .080 Note: .045 .065 .016 .022 .008 .012 .120 .150 .100 BSC 6 .600 BSC 7 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches. 32.pdipPH-ILL.0 8 32-LEAD PLASTIC DUAL-IN-LINE PACKAGE (PDIP) SST PACKAGE CODE: PH 9 TOP VIEW SIDE VIEW BOTTOM VIEW 10 .485 .495 .447 .453 .045 Dia. x .000/.010 Deep Polished (Optional) .042 .048 2 1 .106 .112 32 .020 R. MAX. .023 x 30˚ .029 .042 .048 .076/.125 Dia. Ejector Pin .547 .553 .400 BSC .026 .032 .490 .530 K .013 .021 12 ORE 1 A .585 .595 11 .030 R. .040 .020 High x .002 Deep Characters 13 .050 BSC. 14 .015 Min. .075 .095 .050 BSC. .125 .140 Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in inches (min/max). 3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches. .026 .032 15 32.PLCC.NH-ILL.0 16 32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC) SST PACKAGE CODE: NH © 1998 Silicon Storage Technology, Inc. 21 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications 1.10 0.90 1.05 0.95 PIN # 1 IDENT. DIA. 1.00 .50 BSC 8.10 7.90 0.15 0.05 12.50 12.30 0.70 0.50 Note: .270 .170 14.20 13.80 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent. 2. All linear dimensions are in metric (min/max). 3. Coplanarity: 0.1 (±.05) mm. 32.TSOP-WH-ILL.0 32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) SST PACKAGE CODE: WH © 1998 Silicon Storage Technology, Inc. 22 326-10 12/98 2 Megabit Multi-Purpose Flash SST39SF020 Preliminary Specifications NOTES: 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 © 1998 Silicon Storage Technology, Inc. 23 326-10 12/98