ERICSSON PGT20403

PGT 204 03
DFB/EA Laser Module
for 10 Gb/s Applications
Key Features
• 1550 nm DFB CW source monolithicly
integrated with an Electro Absorptionmodulator (EA)
• Hermetic, 7-pin butterfly package
• Single-mode fiber pigtail
• 12 GHz typical bandwidth
• -2 dBm output power
• Multisourced footprint
Applications
• SDH STM-64 LH
• SONET OC-192 LR
Description
The laser module, intended for OC-192/STM-64 applications, consists of a
DFB laser with integrated absorption modulator mounted in a high frequency package which includes an isolator.
1
PGT 204 03
7
1
10k
TEC
8
TOP VIEW
Figure 1. Block diagram
20.83
4.5
0.2
5.0
Pin Description
1. Thermistor
2. Thermistor
3. Laser DC bias (+)
4. Monitor (-)
5. Monitor (+)
6. TEC (+)
7. TEC (-)
8. EA modulation (-)
5.1
8.2
5.8
1.0
5.0
26.4
30.0
12.02
Pin 8
8.89 12.7
14.0
ø3.0
4xø2.6
Min. 10
Pin 1
Figure 2. Pin description
2
7.3
7x0.5
6x2.54
Pin 7
PGT 204 03
Optical Characteristics
Electrical and optical characteristics at recommended operating conditions, unless otherwise noted.
Parameter
Wavelength
Output power
Extinction ratio
Dispersion penalty
Side mode suppr. ratio
Optical isolation
Conditions
BOL
2.5 VPP
@ 400 ps/nm disp.
Symbol
Min
λL
Pout
ER
1530
-2
10
SMSR
35
30
Symbol
Min
Iop
Ith
Vf
50
fc
tr/tf
12
Typ
Max
Unit
1565
nm
dBm
dB
dB
dB
dB
1.5
Electrical Characteristics
Parameter
Operating current
Threshold current
Forward voltage
Reflection, S11
Small signal modulation bandwidth
Rise/fall time
Monitor dark current
Monitor current
Thermistor resistance
TEC Voltage
Current
Power
Conditions
0-5 GHz
5-9 GHz
-3 dBe
10/90 %
-5 V
@ 25 °C
Typ
5
IMon
0.1
9.5
-2.5
-1.2
Max
Unit
100
25
2
-12
-9
mA
mA
V
dB
dB
GHz
ps
nA
mA
kΩ
V
A
W
40
100
1.0
10.5
2.5
1.2
3
Operating Conditions
Parameter
Symbol
Min
Max
Unit
Operating case temperature
Operating chip temperature
TCase
TOp
0
20
Typ
70
35
°C
°C
Parameter
Symbol
Min
Max
Unit
Storage temperature
Laser forward current
Modulator voltage
TStg
ILD
VMod
-40
85
150
1
°C
mA
V
Absolute Maximum Ratings
-4
CAUTION: Stresses outside those listed in ”Absolute Maximum Ratings” may cause permanent damage to the device.
3
PGT 204 03
Handling Precautions
This device may be damaged as a result of electrostatic
discharge (ESD). Take proper precautions during both handling and testing. This typically includes grounded wrist
wraps, workbenches and floor mats in ESD controlled areas.
Semiconductor devices may be damaged by current surges,
use appropriate transient protection.
Quality Assurance
Ericsson Microelectronics commitment to quality has been
proven through a decade of semiconductor device production and has been confirmed to ISO 9001. Opto product
qualification is made according to the intention of applicable
Telcordia standards.
Connector Options
FC/PC
SC
(Other connectors available on request)
DANGER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
WAVELENGTH 1300 nm - 1600 nm
CLASS 3B LASER
Information given in this data sheet is believed to be accurate and
reliable. However no responsibility is assumed for the consequences of
its use nor for any infringement of patents or other rights of third
parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Ericsson
Microelectronics. These products are sold only according to Ericsson
Microelectronics' general conditions of sale, unless otherwise
confirmed in writing.
Product specifications subject to change without
notice.
Ericsson Microelectronics AB
SE-164 81 Kista, Sweden
Telephone: +46 8 757 50 00
www.ericsson.com/microelectronics
For local sales contacts, please refer to our website
or call: Int + 46 8 757 47 00, Fax: +46 8 757 47 76
4
1522-PGT 204 03 Rev. B
© Ericsson Microelectronics AB, October 2000