.5-6 GHz MESFET Amplifier Filtronic LMA110A Solid State Features • • • • • • • • • • 2.7dB Typical Noise Figure 23dB Typical Gain 12dBm Saturated Output Power 12dB Input/Output Return Loss Typical 0.5-6GHz Frequency Bandwidth +8.5 Volts Dual Bias Supply DC Decoupled RF Input and Output Chip Size : 1.62mmX1.62mm (.064”X.064”) Chip Thickness : 100µm 2 Pad Dimension : 100µm Description The Filtronic LMA110A is a GaAs monolithic distributive amplifier which operates from 0.5 to 6 GHz. This amplifier produces a typical gain of 23dB with a noise figure of 2.7dB. The LMA110A is suitable for wide-band low noise gain block, EW and commercial PCN applications. DC decoupled input and output RF port. Ground is provided to the circuitry through vias to the backside metallization. Electrical Specifications at Ta=25°C (VDD=+8.0V, Zin=Zout=50Ω) Symbol BW S21 Ids ∆S21 NF RLin RLout S12 P-1dB Parameter Operating Bandwidth Small Signal Gain Drain Operating Current Small Signal Gain Flatness Noise Figure Input Return Loss Output Return Loss Reverse Isolation 1-dB Gain Compression Power Test Conditions VD=8V, Vg=-.85V Min. 0.5 20 60 @ 50% Idss -35 7 Limit Typ. 23 100 ±0.4 2.7 -10 -10 -45 10 Max. 6 Units GHz dB mA dB dB dB dB dB dBm 150 ±1 3.5 Absolute Maximum Ratings Symbol Vdd Idd Pin Pt Tch Tstg Tmax. Parameter/Conditions Drain Supply Voltage Total Drain Current RF Input Power Power Dissipation Operating Channel Temperature Storage Temperature Max. Assembly Temp. (1 min. max.) Min. -65 Max. 12 150 24 1.8 150 165 300 Units Volts mA dBm W °C °C °C Notes: 1. This GaAs MMIC is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these devices. 2. Specifications subject to change without notice. DSS 004 WD Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950 .5-6 GHz MESFET Amplifier Filtronic LMA110A Solid State Assembly Diagram Notes: 1.) Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic bonding is not recommended. 2.) The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150°C for 45 minutes. 3.) Bond on bond or stitch bond acceptable. 4.) Conductor over conductor acceptable. Conductors must not short. DSS 004 WD Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950 .5-6 GHz MESFET Amplifier Filtronic LMA110A Solid State Mechanical Outline Notes: 1.) Unless Otherwise specified. 2.) All units are in micron (µm). 3.) All bond pads are 100 X 100 µm2. 4.) Bias pad (VDD) size is 100 X 121.5 µm2. DSS 004 WD Phone: (408) 988-1845 Internet: http://www.FiltronicSolidState.com Fax: (408) 970-9950