FP4050 PRELIMINARY DATA SHEET 2-WATT POWER PHEMT • FEATURES DRAIN BOND PAD ♦ 48 dBm IP3 at 2 GHz ♦ 34 dBm P-1dB at 2 GHz ♦ 14 dB Power Gain at 2 GHz • SOURCE BOND PAD (2X) GATE BOND PAD DESCRIPTION AND APPLICATIONS The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation. Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and ISM band spread spectrum applications. • ELECTRICAL SPECIFICATIONS @ TAmbient = 2 2 ±3 °C Parameter Symbol Test Conditions Output Power @ 1 dB Compression P1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS 34 dBm Power Gain @ 1 dB Compression G1dB f = 2 GHz; VDS = 8V; IDS = 50% IDSS 14 dB Saturated Drain-Source Current IDSS VDS = 2V; VGS = 0V Maximum Drain-Source Current IMAX VDS = 2V; VGS = 1V 2200 mA Transconductance GM 880 mS Pinch-Off Voltage VP VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 10 mA -1.2 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGS = 20 mA 12 15 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 20 mA 12 15 V Gate-Source Leakage Current Magnitude |IGSL| VGS = -5 V Thermal Resistivity QJC Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Min 950 Typ 1100 Max 1300 0.2 15 Units mA mA °C/W Revised: 10/04/00 FP4050 PRELIMINARY DATA SHEET 2-WATT POWER PHEMT • RECOMMENDED CONTINUOUS OPERATING LIMITS Parameter Symbol Nominal Units Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -1.0 V Drain-Source Current IDS 500 mA RF Input Power PIN 800 mW Channel Operating Temperature TCH 150 °C Ambient Temperature TSTG -20/50 °C Note: Device should be operated at or below Recommended Continuous Operating Limits for reliable performance. • ABSOLUTE RATINGS Parameter Symbol Test Conditions Drain-Source Voltage VDS Gate-Source Voltage Min Max Units TAmbient = 22 ± 3 °C 10 V VGS TAmbient = 22 ± 3 °C -5 V Drain-Source Current IDS TAmbient = 22 ± 3 °C 800 mA Gate Current IG TAmbient = 22 ± 3 °C 180 mA RF Input Power PIN TAmbient = 22 ± 3 °C TBD mW Channel Operating Temperature TCH TAmbient = 22 ± 3 °C 175 ºC Storage Temperature TSTG — 175 ºC -65 Note: Even temporary operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. All information and specifications are subject to change without notice. Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filtronicsolidstate.com Revised: 10/04/00