Formosa MS Advanced Schottky Barrier Diodes ASD751V-N2 Surface mount small signal type Features 0.106 (2.7) 0.090 (2.3) 0.012(0.3) Typ. Extermely low VF Extermely thin package R0.5 (0.02) Typ. 0.053 (1.35) 0.045 (1.15) Low stored charge Majority carrier conduction 0.035 (0.9) 0.028 (0.7) 0.106 (2.7) 0.090 (2.3) 0.02(0.5) Typ. R0.02 (0.5) Typ. 0.035 (0.9) 0.028 (0.7) Mechanical data SOD-323 Case : Molded plastic, JEDEC SOD-323 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) MAX. UNIT Repetitive peak reverse voltage PARAMETER CONDITIONS VRM 40 V Continuous reverse voltage VR 30 V Mean rectifying current IO 30 mA Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Capacitance between terminals f=1MHz and applied 10VDC reverse voltage Storage temperature Symbol IFSM TSTG TYP. 200 CT TJ Operating temperature MIN. mA 20 -40 -40 pF +125 o C +125 o C ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted) TYP. MAX. UNIT Forward voltage PARAMETER IF = 1.0 mA DC CONDITIONS Symbol VF MIN. 0.26 0.37 V Reverse current VR = 30 V DC IR 0.17 0.5 uA RATING AND CHARACTERISTIC CURVES (ASD751V-N2) FIG.1-TYPICAL FORWARD FIG.2 - TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 1000m 100 INSTANTANEOUS FORWARD CURRENT,(A) Typ. pulse measurement 100m 5C REVERSE CURRENT , (uA) 10 10m 12 O O Ta = 75 C Ta = 1m O Ta = 25 C 100u O Ta = -25 C 10u 1u 0 0.2 0.4 0.6 0.8 1.0 1.2 FIG.3-TYPICAL TERMINALS CAPACITANCE CAPACITANCE BETWEEN TERMINALS ,(pF) 100 O Ta = 25 C f = 1MHz 50 20 10 5 2 2 4 6 8 10 REVERSE VOLTAGE , (V) 12 1.4 O Ta = 75 C 1 O Ta = 25 C 100n O Ta = -25 C 10n 1n 0 Typ. pulse measurement 5 10 15 20 25 REVERSE VOLTAGE , (V) FORWARD VOLTAGE,(V) 1 0 O Ta = 125 C 14 30 35