n Outline Drawing IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 600 ± 20 300 600 300 600 1100 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=300mA VGE=15V IC=300A VGE=0V VCE=10V f=1MHz VCC=300V IC=300A VGE=± 15V RG=6.8Ω IF=300A VGE=0V IF=300A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 19800 4400 2000 0.6 0.2 0.6 0.2 Max. 2.0 30 7.5 2.8 Units mA µA V V pF 1.2 0.6 1.0 0.35 3.0 300 µs V ns • Thermal Characteristics Items Thermal Resistance Typ. 0.025 Max. 0.11 0.15 Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 700 700 V GE =20V,15V,12V V GE=20V,15V,12V, 600 500 10V 400 C 400 Collector current : I Collector current : I 10V [A] 500 C [A] 600 300 200 100 300 200 100 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25°C T j=125°C 10 CE CE [V] [V] 10 Collector-Emitter voltage V 8 Collector-Emitter voltage :V 1 6 IC= 4 600A 300A 2 150A 0 8 6 IC= 4 600A 300A 2 150A 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : V GE [V] 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =6.8 Ω , V GE =±15V, T j=25°C V CC =300V, R G =6.8 Ω , V GE =±15V, Tj=125°C 1000 tr tf t OFF t ON tr ON, t r, t OFF , t f ON, t r, t OFF , t f [nsec] ton toff [nsec] 1000 Switching time : t 100 Switching time : t 100 tf 10 10 0 100 200 300 400 Collector current : I C [A] 500 0 100 200 300 400 Collector current : I C [A] 500 Switching time vs. R G Dynamic input characteristics [V] CE t OFF Collector-Emitter voltage : V Switching time : t T j=25°C 500 t ON 1000 ON, t r, t OFF , t f [nsec] V CC =300V, I C =300A, V GE =±15V, T j=25°C tr tf 100 25 V CC =200V 300V 400 400V 20 300 15 200 10 100 5 0 10 1 10 5 0 50 500 1000 Gate charge : Q G Gate resistance : R G [ Ω ] 0 1500 [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr, I rr vs. I F 500 700 25°C [A] rr 300 200 100 Reverse recovery time 400 125°C t rr 125°C I rr :t Reverse recovery current : I [A] F Forward current : I 500 I rr rr [nsec] T j=125°C 600 100 25°C t rr 50 25°C 0 0 1 2 3 4 0 100 200 300 400 500 Forward current : I F [A] Forward voltage : V F [V] Reversed biased safe operating area +V GE =15V, -V GE <15V, T j<125°C, R G >6.8 Ω Transient thermal resistance 3000 [A] [°C/W] 0,1 2000 SCSOA C IGBT Collector current : I th(j-c) Thermal resistance : R 2500 Diode (non-repetitive pulse) 1500 1000 500 0,01 RBSOA (Repetitive pulse) 0 0,001 0,01 0,1 Pulse width : PW [sec] 1 0 100 200 300 400 500 Collector-Emitter voltage : V CE [V] 600 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC =300V, R G =6.8 Ω , V GE =±15V T j=25°C 100 E OFF 25°C 20 E ON 125°C 15 E ON 25°C 10 5 E rr 125°C C ies 10 ies , 25 C oes , C res [nF] E OFF 125°C Capacitance : C Switching loss : E ON, E OFF , E rr [mJ/cycle] 30 C oes C res 1 E rr 25°C 0 0 100 200 300 Collector Current : I C 400 500 0 [A] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Straße 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [V] Specification is subject to change without notice May 97