n Outline Drawing Fuji Discrete Package IGBT n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit • Absolute Maximum Ratings ( Tc=25°C) Symbols VCES VGES DC Tc= 25°C IC 25 Collector Current DC Tc=100°C IC 100 1ms Tc= 25°C IC PULSE IGBT Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Mounting Screw Torque Items Collector-Emitter Voltage Gate -Emitter Voltage • Electrical Characteristics Units V V A W °C °C Nm ( at Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Switching Time Ratings 1200 ± 20 16 10 48 135 +150 -40 ∼ +150 50 Turn-on Time Turn-off Time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=10mA VGE=15V IC=10A VGE=0V VCE=10V f=1MHz VCC=600V IC=10A VGE=±15V RG=160Ω VCC=600V IC=10A VGE=+15V RG=16Ω Min. Symbols Rth(j-c) Test Conditions Min. Typ. 5.5 Max. 1.0 20 8.5 3.5 1200 250 80 Units mA µA V pF 1.2 0.6 1.5 0.5 0.16 0.11 0.30 µs µs 0.5 • Thermal Characteristics Items Thermal Resistance Typ. Max. 0.92 Units °C/W Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage T j= 2 5 ° C 25 V GE = 2 0 V , 1 5 V 1 2 V [A] 12V C C 15 Collector Current : I Collector Current : I V GE = 2 0 V , 1 5 V 20 [A] 20 T j= 1 2 5 ° C 25 10 10V 5 15 10V 10 5 8V 8V 0 0 0 1 2 3 4 5 6 0 1 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 5 6 [V] 10 CE [V] 10 CE 8 Collector-Emitter Voltage : V Collector-Emitter Voltage : V 4 T j= 1 2 5 ° C 12 6 4 IC = 20A 10A 2 5A 0 8 6 4 I C= 20A 10A 2 5A 0 0 5 10 15 20 25 0 5 Gate-Emitter Voltage : V GE [V] 15 20 25 Switching Time vs. Collector Current Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 1 6 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 6 0 0 V , R G= 1 6 Ω , V GE = ± 1 5 V , T j= 1 2 5 ° C t off , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] 10 Gate-Emitter Voltage : V GE [V] 1000 t off tf on tf on t on Switching Time : t Switching Time : t 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 2 5 ° C 12 2 Collector-Emitter Voltage : V CE [V] 100 tr 0 5 10 15 Collector Current : I C [A] 20 t on 100 tr 0 5 10 15 Collector Current : I C [A] 20 Switching Time vs. R G V CC =600V, I C = 1 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C , t r, t off , t f [nsec] , t r, t off , t f [nsec] Switching Time vs. R G V CC =600V, I C = 1 0 A , V GE = ± 1 5 V , T j= 2 5 ° C 1000 on tf Switching Time : t Switching Time : t on t off t off 1000 tf t on tr 100 10 t on tr 100 10 100 100 Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ] Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics T j= 2 5 ° C T j= 2 5 ° C 1000 25 800 20 C res 10 GE 600 15 400 10 200 5 0 1 0 5 10 15 20 25 30 0 35 Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , 10 -di / dt= 1 0 0 A / µ s e c 125°C 8 rr 150 160 Reverse Recovery Current vs. Forward Current / dt = 1 0 0 A / µ s e c 125°C 40 60 80 100 120 140 G a t e C h a r g e : Q G [nQ] 25°C 100 50 0 Reverse Recovery Current : I Reverse Recovery Time : t rr [nsec] 200 -di [A] V R= 2 0 0 V , 20 6 25°C 4 2 0 0 5 10 Forward Current : I F [A] 15 0 5 10 Forward Current : I F [A] 15 0 180 Gate-Emitter Voltage : V Capacitance : C Collector-Emitter Voltage : V C oes 100 [V] 400V 600V 800V CE [V] C ies 1000 oes , C res , C ies [pF] VCC= Typical Short Circuit Capability Reverse Biased Safe Operating Area V CC = 8 0 0 V , R G = 1 6 Ω , T j= 1 2 5 ° C + V GE= 1 5 V , - V GE <1 5 V , T j< 1 2 5 ° C , R G > 1 6 Ω 150 60 t SC I SC Collector Current : I 15 10 5 100 40 50 20 0 0 0 200 400 600 800 1000 1200 5 1400 10 15 0 25 20 Gate Voltage : V GE Short Circuit Time : t Short Circuit Current : I C SC [A] SC [A] 20 80 [µs] 200 25 [V] Collector-Emitter Voltage : V CE [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current -di / dt I F = 1 0 A , T j= 1 2 5 ° C [nsec] T j= 1 2 5 ° C 2 5 ° C 30 250 25 F Reverse Recovery Time : t 200 Forward Current : I 15 10 5 20 I rr 150 15 10 100 t rr 50 0 5 0 0 1 2 3 4 0 100 200 300 -di Forward Voltage : V F [V] / dt 400 500 Reverse Recovery Current : I rr [A] rr 20 300 [A] 25 0 600 [A/µsec] Thermal Resistance : Rth(j-c) [°C/W] Transient Thermal Resistance 10 10 1 0 IGBT 10 -1 -2 10 -4 10 10 -3 10 -2 10 -1 10 0 Pulse Width : P W [sec] P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com