IGBT MODULE ( N series ) n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage P.O. Function Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax) Overcurrent Limiting ( ~ 3 Times Rated Current ) n Equivalent Circuit P.O. Box 702708 - Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax) n Absolute Maximum Ratings ( Tc=25°C) Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Collector Power Dissipation Repetitive Peak Reverse Voltage Average Forward Current Surge Current Operating Junction Temperature Storage Temperature Isolation Voltage Mounting Screw Torque *1 Terminal Screw Torque *1 Symbols VCES VGES IC IC PULSE -IC PULSE PC VCES VCES IC IC PULSE PC VRRM IF(AV) IFSM Tj TStg VISO Test Conditions Continuous 1ms Continuous 1 device Continuous 1ms 1 device 10ms A.C. 1min. Ratings 600 ± 20 75 150 75 320 600 ± 20 50 100 200 600 1 50 +150 -40 ∼ +125 2500 3.5 3.5 Units V A W V A W V A °C V Nm Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) n Electrical Characteristics( Tj=25°C ) Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Collector-Emitter Saturation Voltage Turn-on Time Turn-off Time Reverse Current Reverse Recovery Time Symbols ICES IGES VGE(th) VCE(sat) Cies ton toff tf VF trr ICES IGES VCE(sat) ton toff tf IRRM trr Test Conditions VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=20V IC=75mA VGE=15V IC=75A f=1MHz, VGE=0V, VCE=10V VCC=300V IC = 75A VGE=±15V RG = 33Ω IF=75A VGE=0V -di A IF=75A; VGE=-10V; /dt=225 /µs VGE=0V VCE=600V VCE=0V VGE=± 20V VGE=15V IC=50A VCC=300V IC = 50A VGE=±15V RG = 51Ω VR=600V Min. Max. 3.0 15 4.5 7.5 2.8 4950 (typ.) 1.2 1.5 0.35 3.0 300 1.0 100 2.8 1.2 1.5 0.35 1.0 600 Units mA µA V pF µs V ns mA nA V µs mA ns n Thermal Characteristics Items Symbols Thermal Resistance (1 device) Rth(j-c) Contact Thermal Resistance Rth(c-f) Test Conditions Inverter IGBT Inverter FRD Brake IGBT With Thermal Compound Min. Max. 0.39 0.90 0.63 0.05 (typ.) Units °C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=25°C T j=125°C 175 175 V GE =20V,15V,12V V GE =20V,15V, 12V, [A] 150 C 125 10V 100 75 50 Collector current : I Collector current : I C [A] 150 25 125 10V 100 75 50 8V 25 8V 0 0 0 1 2 3 4 5 0 Collector-Emitter voltage : V CE [V] 5 CE [V] 10 [V] 8 Collector-Emitter voltage : V CE 4 T j=125°C 10 6 4 IC= 150A 75A 37.5A 2 0 8 6 IC= 4 150A 75A 2 37.5A 0 0 5 10 15 20 25 0 5 Gate-Emitter voltage : V GE [V] 10 15 20 25 Gate-Emitter voltage : V GE [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =33 Ω , V GE =±15V, Tj=25°C V CC =300V, R G =33 Ω , V GE =±15V, Tj=125°C 1000 , t r , t off , t f [nsec] t on t off on tr tf Switching time : t 100 10 t off t on , t r , t off , t f [nsec] 1000 on 3 Collector-Emitter vs. Gate-Emitter voltage T j=25°C Switching time : t 2 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter voltage : V 1 tr tf 100 10 0 25 50 75 100 Collector current : I C [A] 125 0 25 50 75 100 Collector current : I C [A] 125 Switching time vs. R G Dynamic input characteristics V CC =300V, I C=75A, V GE =±15V, Tj=25°C T j=25°C 25 CE Collector-Emitter voltage : V Switching time : t V CC =200V [V] t on t off 1000 tr tf on , t r , t off , t f [nsec] 500 100 10 10 300 15 200 10 100 5 0 0 100 200 300 400 Gate resistance : R G [ Ω ] Gate charge : Q G [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE =OV t rr, I rr vs. I F 175 [A] rr 125 75 50 25 Reverse recovery time 100 :t Reverse recovery current : I [A] F Forward current : I rr [nsec] T j=125°C 25°C 150 t rr 125°C 100 t rr 25°C I rr 125°C I rr 25°C 10 0 0 1 2 3 4 0 25 50 75 100 125 Forward voltage : V F [V] Forward current : I F [A] Transient thermal resistance +V GE =15V, -V GE <15V, T j<125°C, R G >33 Ω Reversed biased safe operating area [°C/W] 1 700 Brake IGBT 600 [A] Collector current : I C th(j-c) Thermal resistance : R Diode IGBT 0,1 500 SCSOA (non-repetitive pulse) 400 300 200 100 RBSOA (Repetitive pulse) 0,01 0,001 0 0,01 0,1 Pulse width : PW [sec] 1 20 400V 0 100 300V 400 0 100 200 300 400 500 Collector-Emitter voltage : V CE [V] 600 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC =300V, R G =33 Ω , V GE =±15V T j=25°C 5 E off 25°C E on 125°C 3 E on 25°C 2 1 E rr 125°C E rr 25°C 0 0 25 50 75 100 Collector Current : I C [A] 125 Capacitance : C Switching loss : E 10 C ies ies 4 , C oes , C res [nF] E off 125°C 6 on , E off , E rr [mJ/cycle] 7 1 C oes C res 0,1 0 5 10 15 20 25 Collector-Emitter Voltage : V GE [V] 30 35 Brake Chopper IGBT Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j =125°C T j =25°C 125 125 V GE =20V,15V, 12V V GE =20V,15V,12V 100 75 10V 50 Collector current : I Collector current : I C C [A] [A] 100 75 10V 50 25 25 8V 8V 0 0 1 2 3 4 0 5 4 5 Collector-Emitter vs. Gate-Emitter voltage T j =25°C T j =125°C [V] CE [V] 8 Collector-Emitter voltage : V CE 3 10 6 4 IC = 100A 50A 25A 2 8 6 IC = 4 100A 50A 2 25A 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V G E [V] 5 10 15 20 25 Gate-Emitter voltage : V G E [V] Switching time vs. Collector current Switching time vs. Collector current V CC =300V, R G =51 Ω , V GE ±15V, Tj =25°C V CC =300V, R G =51 Ω , V GE =±15V, T j =125°C 1000 , t r , t off , t f [nsec] t on t off on tr tf tr tf 100 Switching time : t 100 t off t on , t r , t off , t f [nsec] 1000 on 2 Collector-Emitter vs. Gate-Emitter voltage 0 Switching time : t 1 Collector-Emitter voltage : V C E [V] 10 Collector-Emitter voltage : V 0 Collector-Emitter voltage : V C E [V] 10 0 20 40 60 Collector current : I C [A] 80 10 0 20 40 60 Collector current : I C [A] 80 Brake Chopper IGBT Dynamic input characteristics Switching time vs. R G T j =25°C V CC =300V, I C =50A, V GE =±15V, Tj =25°C CE 25 V CC =200V 300V 20 400 400V Collector-Emitter voltage : V Switching time : t [V] t on t off 1000 tr tf on , t r , t off , t f [nsec] 500 100 10 10 300 15 200 10 100 5 0 100 0 50 100 Reversed biased safe operating area 0 300 V CC =300V, R G =51 Ω , V GE =±15V 500 , E off , E rr [mJ/cycle] 6 C [A] 400 SCSOA 300 on (non-repetitive pulse) 200 Switching loss : E Collector current : I 250 Switching loss vs. Collector current +V GE =15V, -V GE <15V, T j <125°C, R G >51 Ω 100 RBSOA (Repetitive pulse) 0 5 E off 125°C 4 E off 25°C 3 E on 125°C 2 E on 25°C 1 E rr 125°C E rr 25°C 0 0 100 200 300 400 500 600 0 Capacitance vs. Collector-Emitter voltage T j =25°C 10 ies C ies 1 C oes C res 0,1 0 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] 20 40 60 Collector Current : I C Collector-Emitter voltage : V CE [V] , C oes , C res [nF] 200 Gate charge : Q G [nC] Gate resistance : R G [ Ω ] Capacitance : C 150 35 80 [A] P.O. Box 702708 - Dallas, - (972) 733-1700 - (972) 381-9991 (fax) P.O. Box 702708 - Dallas, TX 75370 PhoneTX (972) 233-1589 Fax (972) 233-0481 - www.collmer.com