2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –5 V Collector current IC –100 mA Emitter current IE 100 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –55 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –55 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –100 nA VCB = –18 V, IE = 0 Emitter cutoff current I EBO — — –50 nA VEB = –2 V, IC = 0 160 — 500 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — –0.1 –0.5 V I C = –10 mA, IB = –1 mA Base to emitter voltage VBE — –0.66 –0.75 V VCE = –12 V, IC = –2 mA Gain bandwidth product fT — 200 — MHz VCE = –12 V, IE = –2 mA Collector output capacitance Cob — 2.0 — pF VCB = –10 V, IE = 0, f = 1MHz Noise figuer NF — 1 5 dB VCE = –6 V, f = 10 Hz — 0.5 1 dB I C = –0.1mA, Rg = 10 kΩ f = 1 kHz Note: 1. The 2SA836 is grouped by hFE as follows. C D 160 to 320 250 to 500 2 VCE = –12 V, IC = –2 mA 2SA836 Typical Output Characteristics –10 300 Collector Current IC (mA) Collector power dissipation Pc (mW) Maximum Collector Dissipation Curve 200 100 –25 –20 –6 –15 –4 –2 –10 –5 µA IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) –2 m –1 m –500 µ –200 µ –100 µ –50 µ –20 µ –10 µ 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 10,000 DC current transfer ratio hFE –20 m –10 m –5 m –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics –100 m –50 m VCE = –12 V Collector Current IC (A) –8 –30 VCE = –12 V 1,000 100 10 –10 µ –100 µ –1 m –10 m Collector Current IC (A) –50 m 3 2SA836 Contours of Constant Noise Figure (1) 100 k 50 Signal source resistance Rg (Ω) 20 10 5 2 1 –1 50 k f = 10 Hz 20 k 10 k 5k 2k 1k 500 200 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Collector Current IC (mA) –2 –5 –10 –20 –50 Collector to Base Voltage VCB (V) Contours of Constant Noise Figure (2) Signal source resistance Rg (Ω) 100 k 1 50 k 20 k 10 k f = 1 kHz 2 dB dB 9 3 4 dB dB 1 dB 0 d B 5 6d dB B 7 8d dB B 5k 2k 1k 500 200 –0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 –10 Collector Current IC (mA) 4 dB 10 dB 9 dB 8 dB 7 f = 1 MHz IE = 0 dB dB 6 dB 4 dB 5 3 dB 2 dB 1 Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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