HITACHI 2SB1530

2SB1530
Silicon PNP Triple Diffused
Application
Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337
Outline
TO-220FM
12
3
1. Base
2. Collector
3. Emitter
2SB1530
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–200
V
Collector to emitter voltage
VCEO
–150
V
Emitter to base voltage
VEBO
–6
V
Collector current
IC
–2
A
Collector peak current
I C(peak)
–5
A
Collector power dissipation
PC
1.5
W
PC *
1
20
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–45 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
–150
—
—
V
I C = –50 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–6
—
—
V
I E = –5 mA, IC = 0
Collector cutoff current
I CBO
—
—
–1
µA
VCB = –120 V, IE = 0
60
—
200
VCE = –4 V, IC = –50 mA
hFE2
60
—
—
VCE = –10 V, IC = –500 mA*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
–3
V
I C = –500 mA, IB = –50 mA
Base to emitter voltage
VBE
—
—
–1
V
I CE = –4 A, IC = –50 mA
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SB1530 is grouped by hFE1 as follows.
B
C
60 to 120
100 to 200
2. Pulse test.
2
2SB1530
Maximum Collector Dissipation Curve
Area of Safe Operation
–10
20
)
50
100
Ambient temperature Ta (°C)
Case temperature TC (°C)
–0.1
(–150 V, –65 mA)
–0.05
–2
–5 –10 –20 –50 –100 –200
Collector to emitter voltage VCE (V)
150
Typical Output Characteristics
–0.8
TC = 25°C –8 –7
–6
–5
–0.6
–4
–3
–0.4
–2
–0.2
–1 mA
Typical Output Characteristics
–1000
–500
Collector Current IC (mA)
Collector current IC (A)
–1.0
(–60 V, –0.4 A)
–0.2
°C
25
0
Ta
–0.5
=
1.5 W
(–15 V, –2 A)
–1.0
(T C
10
IC(max)(Continuous)
n
tio
ra
pe
TC
–2
O
Collector current IC (A)
–5
DC
Collector power dissipation PC (W)
30
VCE = –4 V
TC = –75°C
25
–25
–200
–100
–50
–20
–10
IB = 0
0
–4
–12
–16
–8
–20
Collector to emitter voltage VCE (V)
–5
–0.4
–0.5 –0.6 –0.7 –0.8 –0.9
Base to emitter voltage VBE (V)
–1.0
3
DC Current Transfer Ratio vs.
Collector Current
500
DC current transfer ratio hFE
VCE = –4 V
200
100
25
–25
50
20
10
5
–10
4
TC = 75°C
–20
–50 –100 –200 –500 –1000
Collector current IC (mA)
Collector to emitter saturation voltage VCE(sat) (V)
2SB1530
Collector to Emitter Saturation
Voltage vs.Collector Current
–10
IC = 10 IB
–5
–2
–1.0
TC = 75°C
25
–0.5
–25
–0.2
–0.1
–10
–20
–50 –100 –200
–500 –1000
Collector current IC (mA)
10.0 ± 0.3
2.8 ± 0.2
7.0 ± 0.3
φ 3.2 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
2.5 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-220FM
—
Conforms
1.8 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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