2SA673, 2SA673A Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC1213 and 2SC1213A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA673, 2SA673A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA673 2SA673A Unit Collector to base voltage VCBO –35 –50 V Collector to emitter voltage VCEO –35 –50 V Emitter to base voltage VEBO –4 –4 V Collector current IC –500 –500 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) 2SA673 2SA673A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –35 — — –50 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –35 — — –50 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –4 — — –4 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –0.5 — — –0.5 µA VCB = –20 V, IE = 0 Collector to emitter saturation voltage VCE(sat) — –0.2 –0.6 — –0.2 –0.6 V I C = –150 mA, I B = –15 mA*2 DC current trnsfer ratio hFE*1 60 — 320 60 — 320 VCE = –3 V, I C = –10 mA DC current trnsfer ratio hFE 10 — — 10 — — VCE = –3 V, I C = –500 mA*2 Base to emitter voltage VBE — –0.64 — — –0.64 — Notes: 1. The 2SA673 and 2SA673A are grouped by h FE as follows. 2. Pulse test B C D 60 to 120 100 to 200 160 to 320 2 V VCE = –3 V, I C =–10 mA 2SA673, 2SA673A Typical Output Characteristics (1) –0.7 0 W m 200 –80 –0.9 –0.8 40 400 0 –1. = Collector Current IC (mA) –100 PC Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 600 –0.6 –60 –0.5 –0.4 –40 –0.3 –0.2 –20 –0.1 mA IB = 0 0 100 150 50 Ambient Temperature Ta (°C) 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) Typical Transfer Characteristics –500 –30 –2 –1 mA –100 PC = 400 mW IB = 0 0 –2 –4 –6 –8 –10 Collector to Emitter Voltage VCE (V) –3 25 –25 –200 –10 Ta = 75°C –300 –7 –6 –5 –4 –3 Collector Current IC (mA) Collector Current IC (mA) VCE = –3 V –400 –1.0 –0.3 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base to Emitter Voltage VBE (V) 3 2SA673, 2SA673A DC Current Transfer Ratio vs. Collector Current Gain Bandwidth Product vs. Collector Current 240 VCE = –3 V Gain Bandwidth Product fT (MHz) DC Current Transfer ratio hFE 150 75 50 100 25 0 Ta 50 = °C –25 0 –2 4 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 200 VCE = –3 V 160 120 80 40 0 –5 –10 –20 –50 –100 –200 Collector Current IC (mA) –500 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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