2SB561 Silicon PNP Epitaxial ADE-208-1023 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –5 V Collector current IC –0.7 A Collector peak current iC(peak) –1.0 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –25 — — V I C = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –20 — — V I C = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — V I E = –10 µA, IC = 0 Collector cutoff current I CBO — — –1.0 µA VCB = –20 V, IE = 0 85 — 240 1 DC current transfer ratio hFE* Collector to emitter saturation voltage VCE(sat) — –0.2 –0.5 V I C = –0.5 A, IB = –0.05 A Base to emitter voltage VBE — –0.75 –1.0 V VCE = –1 V, IC = –0.15 A Gain bandwidth product fT — 350 — MHz VCE = –1 V, IC = –0.15 A Collector output capacitance Cob — 20 — pF VCB = –10 V, IE = 0 f = 1 MHz Note: 1. The 2SB561 is grouped by hFE as follows. B C 85 to 170 120 to 240 2 VCE = –1 V, I C = –0.15 A (Pulse test) 2SB561 Maximum Collector Dissipation Curve Typical Output Characteristics –500 Collector current IC (mA) Collector power dissipation PC (W) 0.6 0.4 0.2 –2.5 –400 –2.0 –300 –1.5 –1.0 –200 –0.5 mA –100 IB = 0 0 50 100 Ambient Tmperature Ta (°C) 0 150 –0.4 –0.8 –1.2 –1.6 –2.0 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 3,000 –300 VCE = –1 V –100 –30 Ta = 75°C 25°C –10 –3 –1 0 –0.6 –1.0 –0.2 –0.4 –0.8 Base to Emitter Voltage VBE (V) DC Current transfer raito hFE –1,000 Collector current IC (mA) P C = 5 W 0. VCE = –1 V Pulse 1,000 300 Ta = 75°C 25°C 100 30 10 –1 –3 –10 –30 –100 –300 Collector Current IC (mA) –1,000 3 2SB561 IC = 10 IB –0.3 –0.2 Ta = 75°C 25°C –0.1 0 –1 –3 –10 –30 –100 –300 –1,000 Collector Current IC (mA) –0.8 –500 mA –0.4 –1.0 IC = –300 mA –0.5 Collector to Emitter Saturation Voltage vs. Base Current Collector to emitter saturation voltage VCE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Collector Current –0.6 –0.4 –0.2 0 –1 –3 –10 –30 Base Current IB (mA) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 4 500 200 100 f = 1MHz IE = 0 50 20 10 5 –0.5 –1.0 –2 –5 –10 –20 –50 Collector Base Voltage VCB (V) –100 2SB561 Package Dimensions As of January, 2001 Unit: mm 4.8 ± 0.4 0.7 0.60 Max 0.55Max 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.4 0.5Max 1.27 2.54 Hitachi Code JEDEC EIAJ Mass (reference value) TO-92 (1) Conforms Conforms 0.25 g 5 2SB561 Cautions 1. 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