HITACHI 2SA872A

2SA872, 2SA872A
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC1775/A
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA872, 2SA872A
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA872
2SA872A
Unit
Collector to base voltage
VCBO
–90
–120
V
Collector to emitter voltage
VCEO
–90
–120
V
Emitter to base voltage
VEBO
–5
–5
V
Collector current
IC
–50
–50
mA
Collector power dissipation
PC
300
300
mW
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA872
2SA872A
Item
Symbol Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to emitter
breakdown voltage
V(BR)CEO
–90
—
—
–120
—
—
V
I C = –1 mA, RBE = ∞
Collector cutoff current
I CBO
—
—
–0.5
—
—
—
µA
VCB = –75 V, IE = 0
—
—
—
—
—
–0.5
µA
VCE = –100 V, IE = 0
250
—
800
250
—
800
VCE = –12 V,
I C = –2 mA
160
—
—
160
—
—
VCE = –12 V,
I C = –0.1 mA
Base to emitter voltage VBE
—
—
–0.75 —
—
–0.75 V
VCE = –12 V,
I C = –2 mA
Collector to emitter
saturation voltage
—
—
–0.5
—
—
–0.5
V
I C = –10 mA,
I B = –1 mA
Gain bandwidth product f T
—
120
—
—
120
—
MHz
VCE = –12 V,
I C = –2 mA
Collector output
capacitance
Cob
—
1.8
—
—
1.8
—
pF
VCB = –25 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
—
5.0
—
—
5.0
dB
VCE = –6 V, f = 10 Hz
I C = –50 µA
Rg = 50 kΩ
—
—
1.5
—
—
1.5
dB
f = 1 kHz
DC current tarnsfer ratio hFE1*
1
hFE2
Note:
VCE(sat)
1. The 2SA872/A is grouped by h FE1 as follows.
D
E
250 to 500
400 to 800
2
2SA872, 2SA872A
Typical Output Characteristics
–10
W
Collector Current IC (mA)
m
–10
–6
–8
–4
–6
–4
–2
–2 µA
IB = 0
0
0
100
150
50
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
–10
–20
–30
–40
–50
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
–10
1,000
–3
VCE = –12 V
–1.0
–0.3
Ta =100°C 75 50 25 0 –25
–0.1
–0.03
–0.01
–0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8
Base to Emitter Voltage VBE (V)
DC Current Transfer Ratio hFE
Collector Current IC (mA)
0
30
100
–8
=
200
2
–2 –20 8
–1
–16
–14
–12
PC
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
300
VCE = –12 V
800
600
400
Ta = 100°C
75
50
25
0
–25
200
0
–0.01 –0.03
–0.1
–0.3
–1.0
–3
–10
–30
Collector Current IC (mA)
3
2SA872, 2SA872A
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs. Collector Current
1,000
VCE = –12 V
300
100
30
10
5
–0.01 –0.03
–0.1
–0.3
–1.0
–3
–10
–30
Collector Current IC (mA)
20
IE = 0
f = 1 MHz
10
5
2
–3
–10
–30
–100
Collector to Base Voltage VCB (V)
10
VCE = –6 V
f = 10 Hz
3
1.0
NF
2
0.3
=1
dB
0.1
–0.01
8
10
0.5
30
4
1.0
Signal Source Resistance Rg (kΩ)
100
–1
4
Contours of Constant Noise Figure (1)
50
6
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
–0.1
–1.0
Collector Current IC (mA)
–10
2SA872, 2SA872A
Contours of Constant Noise Figure (3)
Contours of Constant Noise Figure (2)
100
VCE = –6 V
f = 120 Hz
10
3
1.0
NF
0.3
6
4
2
=1
dB
0.1
–0.01
–0.1
–1.0
Collector Current IC (mA)
–10
30
VCE = –6 V
f = 1 kHz
10
3
NF
1.0
2
0.3
6
=1
dB
4
8
10
Signal Source Resistance Rg (kΩ)
30
8
10
Signal Source Resistance Rg (kΩ)
100
0.1
–0.01
–0.1
–1.0
Collector Current IC (mA)
–10
5
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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