HITACHI 2SA1085

2SA1083, 2SA1084, 2SA1085
Silicon PNP Epitaxial
Application
• Low frequency low noise amplifier
• Complementary pair with 2SC2545, 2SC2546 and 2SC2547
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1083, 2SA1084, 2SA1085
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1083
2SA1084
2SA1085
Unit
Collector to base voltage
VCBO
–60
–90
–120
V
Collector to emitter voltage
VCEO
–60
–90
–120
V
Emitter to base voltage
VEBO
–5
–5
–5
V
Collector current
IC
–100
–100
–100
mA
Emitter current
IE
100
100
100
mA
Collector power dissipation
PC
400
400
400
mW
Junction temperature
Tj
150
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
–55 to +150
°C
2
2SA1083, 2SA1084, 2SA1085
Electrical Characteristics (Ta = 25°C)
2SA1083
2SA1084
2SA1085
Item
Symbol Min
Typ
Max
Min
Typ Max
Min
Collector to base
breakdown voltage
V(BR)CBO –60
—
—
–90
—
—
–120 —
—
V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –60
—
—
–90
—
—
–120 —
—
V
IC = –1 mA,
RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO –5
—
—
–5
—
—
–5
—
—
V
IE = –10 µA, IC = 0
Collector cutoff current
ICBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
µA
VCB = –50 V, I E = 0
Emitter cutoff current
IEBO
—
—
–0.1
—
—
–0.1
—
—
–0.1
µA
VEB = –2 V, IC = 0
DC current transfer ratio hFE*1
250
—
800
250
—
800
250
—
800
Collector to emitter
saturation voltage
VCE(sat)
—
—
–0.2
—
—
–0.2
—
—
–0.2
Base to emitter voltage
VBE
—
–0.6 —
—
–0.6 —
—
Gain bandwidth product fT
—
90
—
—
90
—
Collector output
capacitance
Cob
—
3.5
—
—
3.5
Noise voltage reffered
to input
en
—
0.5
—
—
0.5
Note:
Typ Max
Unit Test conditions
VCE = –12 V,
IC = –2 mA
V
IC = –10 mA,
IB = –1 mA
–0.6 —
V
VCE = –12 V,
IC = –2 mA
—
90
—
MHz VCE = –12 V,
IC = –2 mA
—
—
3.5
—
pF
VCB = –10 V, I E = 0,
f = 1 MHz
—
—
0.5
—
nV/
√Hz
VCE = –6V,
IC = –10 mA,
f = 1 kHz,
Rg = 0, ∆f = 1Hz
1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h FE as follows.
D
E
250 to 500
400 to 800
3
2SA1083, 2SA1084, 2SA1085
Typical Output Characteristics (1)
–50
40
–1
Collector current IC (mA)
Collector power dissipation PC (mW)
Maximum Collector Dissipation Curve
600
400
200
–40
–60
–30
P
C
–40
.4 W
–20
–20 µA
–10
0
50
100
150
Ambient Temperature Ta (°C)
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
–16
–12
–35
VCE = –12 V
–30
–25
–20
–15
–8
–10
–4
–5 µA
IB = 0
0
Typicaol Transfer Characteristics
–10
–4
–8
–12
–16
–20
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
–4
0
–20
Collector current IC (mA)
=0
IB = 0
0
4
20
0
–10
–80
–1
–5
–2
–1.0
–0.5
–0.2
–0.1
0
–0.2
–0.4
–0.6
–0.8
Base to Emitter Voltage VBE (V)
–1.0
2SA1083, 2SA1084, 2SA1085
DC Current Transfer Ratio vs.
Collector Current
VCE = –12 V
Pulse
2,000
1,000
500
200
100
50
–0.1
–0.3 –1.0 –3
–10 –30
Collector Current IC (mA)
Collector to emitter saturation voltage
VCE(sat) (V)
DC current teransfer ratio hFE
5,000
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.0
–0.5
–0.2
–0.1
–0.05
–0.02
–0.01
–1
–100
–2
–1.0
–0.5
–0.2
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
Gain bandwidth product fT (MHz)
Base to emitter saturation voltage
VBE(sat) (V)
2,000
IC = 10 IB
–5
–0.1
–1
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
Base to Emitter Saturation Voltage
vs. Collector Current
–10
IC = 10 IB
VCE = –12 V
1,000
500
200
100
50
20
–1
–2
–5 –10 –20
–50 –100
Collector Current IC (mA)
5
2SA1083, 2SA1084, 2SA1085
100
Contours of Constant Noise Figure (1)
IE = 0
f = 1 MHz
50
20
10
5
2
100
Singnal source resistance Rg (kΩ)
Collector output capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
30
10
3
1.0
0.3
0.1
6
Collector Current IC (mA)
10
3
1.0
0.3
NF = 0.5 dB
1 2 4 6
0.1
10
0.03
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector Current IC (mA)
6
Contours of Constant Noise Figure (3)
100
Singnal source resistance Rg (kΩ)
Singnal source resistance Rg (kΩ)
VCE = –6 V
f = 120 Hz
1
2
4
0.03
Contours of Constant Noise Figure (2)
30
NF = 0.5 dB
10
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
1
–0.5 –1.0 –2
–5 –10 –20
–50
Collector to Base Voltage VCB (V)
100
VCE = –6 V
f = 1 kHz
VCE = –6 V
f = 10 Hz
30
10
3
NF = 0.5 dB
1.0
0.3
12
4 6 10
0.1
0.03
0.01
–0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100
Collector Current IC (mA)
Unit: mm
4.8 ± 0.3
0.7
0.60 Max
0.5 ± 0.1
12.7 Min
2.3 Max
5.0 ± 0.2
3.8 ± 0.3
0.5
1.27
2.54
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.