2SA1083, 2SA1084, 2SA1085 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2545, 2SC2546 and 2SC2547 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1083, 2SA1084, 2SA1085 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1083 2SA1084 2SA1085 Unit Collector to base voltage VCBO –60 –90 –120 V Collector to emitter voltage VCEO –60 –90 –120 V Emitter to base voltage VEBO –5 –5 –5 V Collector current IC –100 –100 –100 mA Emitter current IE 100 100 100 mA Collector power dissipation PC 400 400 400 mW Junction temperature Tj 150 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C 2 2SA1083, 2SA1084, 2SA1085 Electrical Characteristics (Ta = 25°C) 2SA1083 2SA1084 2SA1085 Item Symbol Min Typ Max Min Typ Max Min Collector to base breakdown voltage V(BR)CBO –60 — — –90 — — –120 — — V IC = –10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO –60 — — –90 — — –120 — — V IC = –1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –5 — — –5 — — –5 — — V IE = –10 µA, IC = 0 Collector cutoff current ICBO — — –0.1 — — –0.1 — — –0.1 µA VCB = –50 V, I E = 0 Emitter cutoff current IEBO — — –0.1 — — –0.1 — — –0.1 µA VEB = –2 V, IC = 0 DC current transfer ratio hFE*1 250 — 800 250 — 800 250 — 800 Collector to emitter saturation voltage VCE(sat) — — –0.2 — — –0.2 — — –0.2 Base to emitter voltage VBE — –0.6 — — –0.6 — — Gain bandwidth product fT — 90 — — 90 — Collector output capacitance Cob — 3.5 — — 3.5 Noise voltage reffered to input en — 0.5 — — 0.5 Note: Typ Max Unit Test conditions VCE = –12 V, IC = –2 mA V IC = –10 mA, IB = –1 mA –0.6 — V VCE = –12 V, IC = –2 mA — 90 — MHz VCE = –12 V, IC = –2 mA — — 3.5 — pF VCB = –10 V, I E = 0, f = 1 MHz — — 0.5 — nV/ √Hz VCE = –6V, IC = –10 mA, f = 1 kHz, Rg = 0, ∆f = 1Hz 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by h FE as follows. D E 250 to 500 400 to 800 3 2SA1083, 2SA1084, 2SA1085 Typical Output Characteristics (1) –50 40 –1 Collector current IC (mA) Collector power dissipation PC (mW) Maximum Collector Dissipation Curve 600 400 200 –40 –60 –30 P C –40 .4 W –20 –20 µA –10 0 50 100 150 Ambient Temperature Ta (°C) –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) Typical Output Characteristics (2) –16 –12 –35 VCE = –12 V –30 –25 –20 –15 –8 –10 –4 –5 µA IB = 0 0 Typicaol Transfer Characteristics –10 –4 –8 –12 –16 –20 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) –4 0 –20 Collector current IC (mA) =0 IB = 0 0 4 20 0 –10 –80 –1 –5 –2 –1.0 –0.5 –0.2 –0.1 0 –0.2 –0.4 –0.6 –0.8 Base to Emitter Voltage VBE (V) –1.0 2SA1083, 2SA1084, 2SA1085 DC Current Transfer Ratio vs. Collector Current VCE = –12 V Pulse 2,000 1,000 500 200 100 50 –0.1 –0.3 –1.0 –3 –10 –30 Collector Current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) DC current teransfer ratio hFE 5,000 Collector to Emitter Saturation Voltage vs. Collector Current –1.0 –0.5 –0.2 –0.1 –0.05 –0.02 –0.01 –1 –100 –2 –1.0 –0.5 –0.2 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) Gain bandwidth product fT (MHz) Base to emitter saturation voltage VBE(sat) (V) 2,000 IC = 10 IB –5 –0.1 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current Base to Emitter Saturation Voltage vs. Collector Current –10 IC = 10 IB VCE = –12 V 1,000 500 200 100 50 20 –1 –2 –5 –10 –20 –50 –100 Collector Current IC (mA) 5 2SA1083, 2SA1084, 2SA1085 100 Contours of Constant Noise Figure (1) IE = 0 f = 1 MHz 50 20 10 5 2 100 Singnal source resistance Rg (kΩ) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 30 10 3 1.0 0.3 0.1 6 Collector Current IC (mA) 10 3 1.0 0.3 NF = 0.5 dB 1 2 4 6 0.1 10 0.03 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) 6 Contours of Constant Noise Figure (3) 100 Singnal source resistance Rg (kΩ) Singnal source resistance Rg (kΩ) VCE = –6 V f = 120 Hz 1 2 4 0.03 Contours of Constant Noise Figure (2) 30 NF = 0.5 dB 10 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 1 –0.5 –1.0 –2 –5 –10 –20 –50 Collector to Base Voltage VCB (V) 100 VCE = –6 V f = 1 kHz VCE = –6 V f = 10 Hz 30 10 3 NF = 0.5 dB 1.0 0.3 12 4 6 10 0.1 0.03 0.01 –0.01 –0.03 –0.1 –0.3 –1.0 –3 –10 –30 –100 Collector Current IC (mA) Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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