2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum Ratings (Ta = 25°C) Ratings Item Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base voltage VEBO 5 5 V Collector current IC 1.5 1.5 A Collector peak current I C(peak) 3 3 A 18 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) 2SD2122(L)/(S) 2SD2123(L)/(S) Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 180 — — 180 — — V I C = 1 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 120 — — 160 — — V I C = 10 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — 5 — — V I E = 1 mA, IC = 0 Collector cutoff current I CBO — — 10 — — 10 µA VCB = 160 V, IE = 0 60 — 200 60 — 200 A VCE = 5 V, IC = 150 mA*1 hFE2 30 — — 30 — — VCE(sat) — — 1 — — 1 V I C = 500 mA, I B = 50 mA*1 Base to emitter voltage VBE — — 1.5 — — 1.5 V VCE = 5 V, IC = 150 mA*1 Gain bandwidth product f T — 180 — — 180 — MHz VCE = 5 V, IC = 150 mA*1 Collector output capacitance — 14 — — 14 — pF VCB = 10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* Collector to emitter saturation voltage Cob 2 VCE = 5 V, IC = 500 mA*1 Notes: 1. Pulse test 2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows. B C 60 to 120 100 to 200 2 2SD2122(L)/(S), 2SD2123(L)/(S) Maximum Collector Dissipation Curve Area of Safe Operation 10 Collector current IC (A) 3.0 20 10 IC (max) 1.0 0.3 2SD2123 on ati er ) Op 25°C DC = (T C 0.1 0.03 2SD2122 0.01 0 50 100 Case temperature TC (°C) 3 150 0.8 0.6 1,000 10 98 7 6 5 P C 4 = 18 W 3 0.4 2 0.2 1 mA IB = 0 0 TC = 25°C 10 20 30 40 50 Collector to emitter voltage VCE (V) DC current transfer ratio hFE 1.0 10 30 100 300 Collector to emitter voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics Collector current IC (A) Collector power dissipation Pc (W) 30 VCE = 5 V Ta = 25°C 300 100 30 10 0.03 0.1 0.3 1.0 Collector current IC (A) 3.0 3 Saturation Voltage vs. Collector Current 1.0 0.3 0.1 0.03 Ta = 25°C lC = 10 lB 0.01 0.03 0.1 0.3 1.0 Collector current IC (A) Saturation Voltage vs. Collector Current Base to emitter saturation voltage VBE (sat) (V) Collector to emitter saturation voltage VCE (sat) (V) 2SD2122(L)/(S), 2SD2123(L)/(S) 3.0 10 3.0 1.0 0.3 0.1 0.03 Gain bandwidth product fT (MHz) Collector current IC (A) 3.0 1,000 2.0 1.6 1.2 0.8 0.4 VCE = 5 V Ta = 25°C 4 0.1 0.3 1.0 Collector current IC (A) Gain Bandwidth Product vs. Collector Current Typical Transfer Characteristics 0 Ta = 25°C lC = 10 lB 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 300 100 30 10 0.01 VCE = 5 V Ta = 25°C 0.03 0.1 0.3 Collector current IC (A) 1.0 2SD2122(L)/(S), 2SD2123(L)/(S) Collector output capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 100 30 10 3 f = 1 MHz IE = 0 Ta = 25°C 1 1 3 10 30 100 Collector to base voltage VCB (V) 5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 Unit: mm 2.29 ± 0.5 16.2 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 1.2 ± 0.3 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. 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