HITACHI 2SD2122L

2SD2122(L)/(S), 2SD2123(L)/(S)
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB1409(L)/(S)
Outline
DPAK
4
4
1
2
3
S Type
12
3
L Type
1. Base
2. Collector
3. Emitter
4. Collector
2SD2122(L)/(S), 2SD2123(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage
VCBO
180
180
V
Collector to emitter voltage
VCEO
120
160
V
Emitter to base voltage
VEBO
5
5
V
Collector current
IC
1.5
1.5
A
Collector peak current
I C(peak)
3
3
A
18
18
W
1
Collector power dissipation
PC *
Junction temperature
Tj
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S)
2SD2123(L)/(S)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V(BR)CBO
180
—
—
180
—
—
V
I C = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
120
—
—
160
—
—
V
I C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
5
—
—
5
—
—
V
I E = 1 mA, IC = 0
Collector cutoff current
I CBO
—
—
10
—
—
10
µA
VCB = 160 V, IE = 0
60
—
200
60
—
200
A
VCE = 5 V, IC = 150 mA*1
hFE2
30
—
—
30
—
—
VCE(sat)
—
—
1
—
—
1
V
I C = 500 mA,
I B = 50 mA*1
Base to emitter voltage VBE
—
—
1.5
—
—
1.5
V
VCE = 5 V, IC = 150 mA*1
Gain bandwidth product f T
—
180
—
—
180
—
MHz
VCE = 5 V, IC = 150 mA*1
Collector output
capacitance
—
14
—
—
14
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
DC current transfer ratio hFE1*
Collector to emitter
saturation voltage
Cob
2
VCE = 5 V, IC = 500 mA*1
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h FE1 as follows.
B
C
60 to 120
100 to 200
2
2SD2122(L)/(S), 2SD2123(L)/(S)
Maximum Collector Dissipation Curve
Area of Safe Operation
10
Collector current IC (A)
3.0
20
10
IC (max)
1.0
0.3
2SD2123
on
ati
er )
Op 25°C
DC =
(T C
0.1
0.03
2SD2122
0.01
0
50
100
Case temperature TC (°C)
3
150
0.8
0.6
1,000
10
98 7
6
5
P
C
4
=
18
W
3
0.4
2
0.2
1 mA
IB = 0
0
TC = 25°C
10
20
30
40
50
Collector to emitter voltage VCE (V)
DC current transfer ratio hFE
1.0
10
30
100
300
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
Collector current IC (A)
Collector power dissipation Pc (W)
30
VCE = 5 V
Ta = 25°C
300
100
30
10
0.03
0.1
0.3
1.0
Collector current IC (A)
3.0
3
Saturation Voltage vs. Collector Current
1.0
0.3
0.1
0.03
Ta = 25°C
lC = 10 lB
0.01
0.03
0.1
0.3
1.0
Collector current IC (A)
Saturation Voltage vs. Collector Current
Base to emitter saturation voltage VBE (sat) (V)
Collector to emitter saturation voltage VCE (sat) (V)
2SD2122(L)/(S), 2SD2123(L)/(S)
3.0
10
3.0
1.0
0.3
0.1
0.03
Gain bandwidth product fT (MHz)
Collector current IC (A)
3.0
1,000
2.0
1.6
1.2
0.8
0.4
VCE = 5 V
Ta = 25°C
4
0.1
0.3
1.0
Collector current IC (A)
Gain Bandwidth Product
vs. Collector Current
Typical Transfer Characteristics
0
Ta = 25°C
lC = 10 lB
0.4
0.8
1.2
1.6
Base to emitter voltage VBE (V)
2.0
300
100
30
10
0.01
VCE = 5 V
Ta = 25°C
0.03
0.1
0.3
Collector current IC (A)
1.0
2SD2122(L)/(S), 2SD2123(L)/(S)
Collector output capacitance Cob (pF)
Collector Output Capacitance
vs. Collector to Base Voltage
100
30
10
3
f = 1 MHz
IE = 0
Ta = 25°C
1
1
3
10
30
100
Collector to base voltage VCB (V)
5
2.3 ± 0.2
0.55 ± 0.1
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
1.7 ± 0.5
Unit: mm
2.29 ± 0.5
16.2 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
3.1 ± 0.5
1.2 ± 0.3
2.29 ± 0.5
0.55 ± 0.1
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
DPAK (L)-(1)
—
Conforms
0.42 g
Cautions
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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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