HITACHI 2SD1418

2SD1418
Silicon NPN Epitaxial
Application
• Low frequency power amplifier
• Complementary pair with 2SB1025
Outline
UPAK
1
3
2
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1418
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
120
V
Collector to emitter voltage
VCEO
80
V
Emitter to base voltage
VEBO
5
V
Collector current
IC
1
A
2
A
1
W
Collector peak current
iC(peak)*
1
2
Collector power dissipation
PC *
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
120
—
—
V
I C = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
80
—
—
V
I C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
5
—
—
V
I E = 10 µA, IC = 0
Collector cutoff current
I CBO
—
—
10
µA
VCB = 100 V, IE = 0
60
—
320
VEB = 5 V, IC = 150 mA*2
hFE2
30
—
—
VCE = 5 V, IC = 500 mA*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
1
V
I C = 500 mA, IB = 50 mA*2
Base to emitter voltage
VBE
—
—
1.5
V
VCE = 5 V, IC = 150 mA*2
Gain bandwidth product
fT
—
140
—
MHz
VCE = 5 V, IC = 150 mA*2
Collector output capacitance
Cob
—
12
—
pF
VCB = 10 V, IE = 0, f = 1 MHz
DC current transfer ratio
hFE1*
1
Notes: 1. The 2SD1418 is grouped by h FE1 as follows.
2. Pulse test
Mark
DA
DB
DC
hFE1
60 to 120
100 to 200
160 to 320
2
2SD1418
Typical Output Characteristics
Maximum Collector Dissipation Curve
1.0
Collector Current IC (A)
Collector Power Dissipation PC (W)
(on the alumina ceramic board)
1.2
0.8
0.4
0.6
10
5
0.4
2
1
0.2
0.5 mA
IB = 0
0
0
50
100
150
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
500
200
Ta = 75
°C
25
–25
100
50
20
10
5
2
1
DC Current Transfer Ratio hFE
VCE = 5 V
Collector Current IC (mA)
0.8
35
30
25
20
15
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
300
VCE = 5 V
250
°C
Ta = 75
200
25
150
–25
100
50
0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
1
3
10
30
100
300 1,000
Collector Current IC (mA)
3
2SD1418
0.4
0.3
0.2
0.1
0
1.2
IC = 10 IB
Pulse
1.0
0.8
V BE(sat)
0.6
0.4
0.2
VCE(sat)
0
Gain Bandwidth Product fT (MHz)
1
Gain Bandwidth Product vs. Collector Current
240
VCE = 5 V
Pulse
200
160
120
80
40
0
10
4
3
10
30
100 300
Collector Current IC (mA)
30
100
300
Collector Current IC (mA)
1,000
1,000
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
0.5
Base to Emitter Saturation Voltage VBE(sat) (V)
Collector to Emitter Saturation Voltage VCE(sat) (V)
Saturation Voltage vs. Collector Current
0.6
200
f = 1 MHz
IE = 0
100
50
20
10
5
2
1
2
5
10 20
50 100
Collector to Base Voltage VCB (V)
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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