2SD1418 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1025 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Collector current IC 1 A 2 A 1 W Collector peak current iC(peak)* 1 2 Collector power dissipation PC * Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 80 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 10 µA VCB = 100 V, IE = 0 60 — 320 VEB = 5 V, IC = 150 mA*2 hFE2 30 — — VCE = 5 V, IC = 500 mA*2 Collector to emitter saturation voltage VCE(sat) — — 1 V I C = 500 mA, IB = 50 mA*2 Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 150 mA*2 Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 150 mA*2 Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz DC current transfer ratio hFE1* 1 Notes: 1. The 2SD1418 is grouped by h FE1 as follows. 2. Pulse test Mark DA DB DC hFE1 60 to 120 100 to 200 160 to 320 2 2SD1418 Typical Output Characteristics Maximum Collector Dissipation Curve 1.0 Collector Current IC (A) Collector Power Dissipation PC (W) (on the alumina ceramic board) 1.2 0.8 0.4 0.6 10 5 0.4 2 1 0.2 0.5 mA IB = 0 0 0 50 100 150 Ambient Temperature Ta (°C) Typical Transfer Characteristics 500 200 Ta = 75 °C 25 –25 100 50 20 10 5 2 1 DC Current Transfer Ratio hFE VCE = 5 V Collector Current IC (mA) 0.8 35 30 25 20 15 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 300 VCE = 5 V 250 °C Ta = 75 200 25 150 –25 100 50 0 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 1 3 10 30 100 300 1,000 Collector Current IC (mA) 3 2SD1418 0.4 0.3 0.2 0.1 0 1.2 IC = 10 IB Pulse 1.0 0.8 V BE(sat) 0.6 0.4 0.2 VCE(sat) 0 Gain Bandwidth Product fT (MHz) 1 Gain Bandwidth Product vs. Collector Current 240 VCE = 5 V Pulse 200 160 120 80 40 0 10 4 3 10 30 100 300 Collector Current IC (mA) 30 100 300 Collector Current IC (mA) 1,000 1,000 Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 0.5 Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Saturation Voltage vs. Collector Current 0.6 200 f = 1 MHz IE = 0 100 50 20 10 5 2 1 2 5 10 20 50 100 Collector to Base Voltage VCB (V) Unit: mm 1.5 1.5 3.0 0.44 Max Hitachi Code JEDEC EIAJ Weight (reference value) (0.2) (2.5) (1.5) (0.4) 0.53 Max 0.48 Max 1.5 ± 0.1 0.44 Max 2.5 ± 0.1 4.25 Max φ1 0.8 Min 1.8 Max 0.4 4.5 ± 0.1 UPAK — Conforms 0.050 g Cautions 1. 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