HITACHI 2SB1401

2SB1401
Silicon PNP Triple Diffused
ADE-208-875 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier
Outline
TO-220FM
2
1
12
3
1. Base
2. Collector
3. Emitter
55 kΩ
(Typ)
3
2SB1401
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–300
V
Collector to emitter voltage
VCEO
–300
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–0.3
A
Collector peak current
I C(peak)
–0.6
A
Collector power dissipation
PC
2
W
PC *
1
15
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
–300
—
—
V
I C = –1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
–300
—
—
V
I C = –10 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
–7
—
—
V
I E = –1 mA, IC = 0
Collector cutoff current
I CBO
—
—
–10
µA
VCB = –300 V, IE = 0
I CEO
—
—
–10
VCE = –60 V, RBE = ∞
I EBO
—
—
–10
VEB = –5 V, IC = 0
hFE1
1000
—
—
VCE = –1.5 V, IC = –20 mA*1
hFE2
1500
—
—
VCE = –1.5 V, IC = –100 mA*1
Collector to emitter saturation
voltage
VCE(sat)
—
—
–1.5
V
I C = –100 mA, IB = –0.2 mA*1
Base to emitter saturation
voltage
VBE(sat)
—
—
–2.0
V
I C = –100 mA, IB = –0.2 mA*1
DC current transfer ratio
Note:
2
1. Pulse test.
2SB1401
Maximum Collector Dissipation Curve
Typical Output Characteristics
Collector current IC (mA)
20
10
00
40
–1 –100
0
–8
–60
–400
–40
–300
–20
µA
–200
–100
IB = 0
0
50
100
Case temperature TC (°C)
DC Current Transfer Ratio vs.
Collector Current
10000
VCE = –1.5 V
5000 Pulse
°C
75
2000
= °C
Tc 25
C
1000
5°
–2
500
200
100
50
–1 –2
–5 –10 –20 –50 –100 –200 –500 –1000
Collector current IC (mA)
150
0
–5
–3
–4
–2
–1
Collector to emitter voltage VCE (V)
Saturation Voltage vs.
Collector Current
–10
–5
–2
200
VBE(sat)
–1.0
500
–0.5
IC/IB = 200
VCE(sat)
TC = 25°C
–0.2
–0.1
–5
–10 –20
–50 –100 –200
Collector current IC (mA)
–500 –1000
Transient Thermal Resistance
Thermal resistance θj-c(°C/W)
DC current transfer ratio hFE
TC = 25°C
–2
–500
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter sauration voltage VBE(sat) (V)
Collector power dissipation PC (W)
30
10
3
TC = 25°C
1.0
0.3
0.1
1m
10m
100m
1.0
10
100
1000
Time t (s)
3
2SB1401
Package Dimensions
10.0 ± 0.3
2.8 ± 0.2
7.0 ± 0.3
φ 3.2 ± 0.2
Unit: mm
0.7 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
4.45 ± 0.3
2.5
14.0 ± 1.0
5.0 ± 0.3
1.2 ± 0.2
1.4 ± 0.2
2.0 ± 0.3
12.0 ± 0.3
17.0 ± 0.3
0.6
2.5 ± 0.2
0.5 ± 0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
4
TO-220FM
—
Conforms
1.8 g
2SB1401
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
5