ETC 2SC3957GIA

2SC3957
Silicon NPN Epitaxial, Darlington
ADE-208-1094 (Z)
1st. Edition
Mar. 2001
Application
High gain amplifier
Outline
MPAK-4
2
1
3
3
1
4
1. Collector
2. Emitter
3. Base
4. NC
2
2SC3957
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
10
V
Collector current
IC
300
mA
Collector peak current
I C (peak)
500
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V(BR)CEO
30
—
—
V
I C = 1 mA, RBE = ∞
Collector cutoff current
I CBO
—
—
100
nA
VCB = 30 V, IE = 0
Emitter cutoff current
I EBO
nA
VEB = 10 V, IC = 0
—
—
100
1
2000
—
100000
I C = 10 mA, VCE = 5 V*2
hFE2* 1
3000
—
—
I C = 100 mA, VCE = 5 V*2
hFE3* 1
3000
—
—
I C = 400 mA, VCE = 5 V*2
Collector to emitter saturation
voltage
VCE(sat)
—
—
1.5
V
I C = 100 mA, IB = 0.1 mA*2
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
V
I C = 100 mA, IB = 0.1 mA*2
DC current transfer ratio
hFE1*
Notes: 1. The 2SC3957 is grouped by h FE as follows.
2. Pulse test
Mark
GIA
hFE1
2000 to 100000 5000 to 100000
hFE2
3000 min
10000 min
hFE3
3000 min
10000 min
2
GIB
2SC3957
Typical Output Characteristics
6
8
150
100
50
200
150
4
100
2 µA
50
PC = 150 mW
IB = 0
0
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector to Emitter Saturation Voltage
VCE(sat) (V)
80
VCE = 5 V
70 Pulse
30
20
10
0
2.0
Ta
40
=1
7 00
50 5 °C
60
50
25
0
–25
–50
5.0 10 20 50 100 200
Collector Current IC (mA)
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
DC Current Transfer Ratio hFE (×103)
10
250
Collector Current IC (mA)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
500
1.1
IC = 1,000 IB
1.0
Ta = –50°C
–25
0
25
50
75
100
0.9
0.8
0.7
0.6
0.5
Pulse
0.4
0.3
1
2
5 10 20
50 100 200
Collector Current IC (mA)
500
3
2SC3957
Base to Emitter Saturation Voltage vs.
Collector Current
Ta = 25°C
Pulse
2.0
1.6
1.2
20 50 100 200 IC = 500 mA
0.8
0.4
IC = 1,000 IB
Pulse
1.8
Ta = –50
–25
0
25
50
75
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0
1
4
2.0
2.4
Base to Emitter Saturation Voltage
VBE(sat) (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage vs.
Base Current
3
10
30
100 300
Base Current IB (µA)
1,000
1
2
5 10 20 50 100 200 500
Collector Current IC (mA)
2SC3957
Package Dimensions
As of January, 2001
Unit: mm
+ 0.1
0.95
0.16 – 0.06
2.8
0 – 0.1
0.65
0.1
0.6 +– 0.05
0.4 – 0.05
+ 0.1
0.65
0.1
0.4 +– 0.05
1.5 ± 0.15
0.4 – 0.05
+ 0.2
– 0.6
+ 0.1
2.95 ± 0.2
1.9 ± 0.2
0.95 0.95
0.85
1.1 – 0.1
+ 0.2
0.3
1.8 ± 0.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
MPAK-4
—
Conforms
0.013 g
5
2SC3957
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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