2SC3957 Silicon NPN Epitaxial, Darlington ADE-208-1094 (Z) 1st. Edition Mar. 2001 Application High gain amplifier Outline MPAK-4 2 1 3 3 1 4 1. Collector 2. Emitter 3. Base 4. NC 2 2SC3957 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector peak current I C (peak) 500 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V(BR)CEO 30 — — V I C = 1 mA, RBE = ∞ Collector cutoff current I CBO — — 100 nA VCB = 30 V, IE = 0 Emitter cutoff current I EBO nA VEB = 10 V, IC = 0 — — 100 1 2000 — 100000 I C = 10 mA, VCE = 5 V*2 hFE2* 1 3000 — — I C = 100 mA, VCE = 5 V*2 hFE3* 1 3000 — — I C = 400 mA, VCE = 5 V*2 Collector to emitter saturation voltage VCE(sat) — — 1.5 V I C = 100 mA, IB = 0.1 mA*2 Base to emitter saturation voltage VBE(sat) — — 2.0 V I C = 100 mA, IB = 0.1 mA*2 DC current transfer ratio hFE1* Notes: 1. The 2SC3957 is grouped by h FE as follows. 2. Pulse test Mark GIA hFE1 2000 to 100000 5000 to 100000 hFE2 3000 min 10000 min hFE3 3000 min 10000 min 2 GIB 2SC3957 Typical Output Characteristics 6 8 150 100 50 200 150 4 100 2 µA 50 PC = 150 mW IB = 0 0 Collector to Emitter Saturation Voltage vs. Collector Current Collector to Emitter Saturation Voltage VCE(sat) (V) 80 VCE = 5 V 70 Pulse 30 20 10 0 2.0 Ta 40 =1 7 00 50 5 °C 60 50 25 0 –25 –50 5.0 10 20 50 100 200 Collector Current IC (mA) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) 0 50 100 150 Ambient Temperature Ta (°C) DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE (×103) 10 250 Collector Current IC (mA) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 500 1.1 IC = 1,000 IB 1.0 Ta = –50°C –25 0 25 50 75 100 0.9 0.8 0.7 0.6 0.5 Pulse 0.4 0.3 1 2 5 10 20 50 100 200 Collector Current IC (mA) 500 3 2SC3957 Base to Emitter Saturation Voltage vs. Collector Current Ta = 25°C Pulse 2.0 1.6 1.2 20 50 100 200 IC = 500 mA 0.8 0.4 IC = 1,000 IB Pulse 1.8 Ta = –50 –25 0 25 50 75 100 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1 4 2.0 2.4 Base to Emitter Saturation Voltage VBE(sat) (V) Collector to Emitter Saturation Voltage VCE(sat) (V) Collector to Emitter Saturation Voltage vs. Base Current 3 10 30 100 300 Base Current IB (µA) 1,000 1 2 5 10 20 50 100 200 500 Collector Current IC (mA) 2SC3957 Package Dimensions As of January, 2001 Unit: mm + 0.1 0.95 0.16 – 0.06 2.8 0 – 0.1 0.65 0.1 0.6 +– 0.05 0.4 – 0.05 + 0.1 0.65 0.1 0.4 +– 0.05 1.5 ± 0.15 0.4 – 0.05 + 0.2 – 0.6 + 0.1 2.95 ± 0.2 1.9 ± 0.2 0.95 0.95 0.85 1.1 – 0.1 + 0.2 0.3 1.8 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK-4 — Conforms 0.013 g 5 2SC3957 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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