2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage VCEO –120 V Emitter to base voltage VEBO –7 V Collector current IC –25 A Collector peak current I C(peak) –35 A 120 W 150 °C –55 to +150 °C 25 A 1 Collector power dissipation PC * Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID* 1 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO –120 — — V I C = –0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage –120 — — V I C = –25 mA, RBE = ∞ Collector to emitter sustain voltage VCEO(sus) –120 — — V I C = –200 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO –7 — — V I E = –50 mA, IC = 0 Collector cutoff current I CBO — — –10 µA VCB = –100 V, IE = 0 I CEO — — –10 VCE = –100 V, RBE = ∞ hFE1 2000 — 20000 VCE = –4 V, IC = –12 A*1 hFE2 500 — — VCE = –4 V, IC = –25 A*1 Collector to emitter saturation VCE(sat)1 — — –2.0 voltage VCE(sat)2 — — –3.5 Base to emitter saturation VBE(sat)1 — — –3.0 voltage VBE(sat)2 — — –4.5 DC current transfer ratio Note: 2 1. Pulse test. V I C = –12 A, IB = –24 mA*1 I C = –25 A, IB = –250 mA*1 V I C = –12 A, IB = –24 mA I C = –25 A, IB = –250 mA*1 2SB1494 Maximum Collector Dissipation Curve Area of Safe Operation –100 –1.0 –8 –4 –0.5 mA IB = 0 0 –1 –2 –3 –4 –5 Collector to emitter voltage VCE (V) –10 –30 –100 –300 Collector to emitter voltage VCE (V) 100000 DC current transfer ratio hFE .0 –5 –1.5 –12 ) 5°C =2 TC = 25°C TC on( –16 –3.0 –2.5 –2.0 Ta = 25°C 1 Shot Pulse DC Current Transfer Ratio vs. Collector Current Typical Output Characteristics –20 s –1.0 –0.1 –3 150 ti era Op 50 100 Case temperature TC (°C) s 0m –3 –0.3 0 Collector current IC (A) IC(max) =1 40 –10 1m 80 DC Collector current IC (A) iC(peak) –30 PW Collector power dissipation PC (W) 120 30000 10000 3000 1000 °C 75 = C Tc 25° C 5° –2 VCE = –4 V 300 100 –10 –30 –0.1 –0.3 –1.0 –3 Collector current IC (A) –100 3 Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 2SB1494 Saturation Voltage vs. Collector Current –10 TC = 25°C IC/IB = 200 –3 VBE(sat) –1.0 VCE(sat) –0.3 –0.1 –0.1 –0.3 –1.0 –3 –10 –30 Collector current IC (A) –100 Transient Thermal Resistance Thermal resistance θj-c (°C/W) 10 3 TC = 25°C 1.0 0.3 0.1 1m 4 10 m 100 m 1.0 Time t (s) 10 100 1000 15.6 ± 0.3 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 Unit: mm 4.8 ± 0.2 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 5.45 ± 0.5 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P — Conforms 5.0 g Cautions 1. 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